专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009051664A3 LIGHT EMITTING AND LASING SEMICONDUCTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光半导体器件和方法
公开(公告)号：WO2009051664A3
公开(公告)日：2009-08-13
申请号：PCT/US2008011653
申请日：2008-10-10
申请人： UNIV ILLINOIS , HOLONYAK NICK JR , FENG MILTON , WALTER GABRIEL , JAMES ADAM
发明人： HOLONYAK NICK JR , FENG MILTON , WALTER GABRIEL , JAMES ADAM
IPC分类号： H01L33/00 , H01S3/0941
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.
摘要翻译：一种用于响应于电信号产生发光的二端半导体器件，包括：设置在半导体发射极区域和具有邻近基极区域的隧道结的半导体集电极区域之间的无端半导体基极区域; 所述基区具有其中显示量子尺寸效应的区域; 分别与发射极区域和集电极区域耦合的发射极端子和集电极端子; 由此使得相对于发射极和集电极端子的电信号的施加导致来自基极区域的光发射。电信号的应用可用于反向偏置隧道结。在隧道结处产生的孔在基极区域中与电子流入基极区域，导致发光。显示量子尺寸效应的区域有助于重组。

2. 发明申请

WO2010087948A3 LIGHT EMITTING AND LASING TRANSISTOR DEVICES AND METHODS 审中-公开
公开(公告)号：WO2010087948A3
公开(公告)日：2010-11-18
申请号：PCT/US2010000161
申请日：2010-01-22
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
发明人： FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

3. 发明申请

WO2010087948A8 LIGHT EMITTING AND LASING TRANSISTOR DEVICES AND METHODS 审中-公开
标题翻译：发光和激光晶体管器件和方法
公开(公告)号：WO2010087948A8
公开(公告)日：2010-09-30
申请号：PCT/US2010000161
申请日：2010-01-22
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
发明人： FENG MILTON , HOLONYAK NICK JR , WALTER GABRIEL , THEN HAN WUI
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： H01S5/06203 , H01S5/3095
摘要： A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.
摘要翻译：一种用于从半导体器件产生光发射的方法，包括以下步骤：提供设置在半导体发射极区和形成与基极区相邻的隧道结的半导体集电极区之间的半导体基极区; 在基区中提供表现出量子尺寸效应的区域; 提供分别与发射极区域，基极区域和集电极区域耦合的发射极端子，基极端子和集电极端子; 并且相对于发射极端子，基极端子和集电极端子施加电信号以产生来自基极区域的光发射。

4. 发明申请

WO2006093883A2 SEMICONDUCTOR BIPOLAR LIGHT EMITTING AND LASER DEVICES AND METHODS 审中-公开
标题翻译：半导体双极发光器件和激光器件和方法
公开(公告)号：WO2006093883A2
公开(公告)日：2006-09-08
申请号：PCT/US2006006879
申请日：2006-02-27
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , CHAN RICHARD , WALTER GABRIEL
发明人： FENG MILTON , HOLONYAK NICK JR , CHAN RICHARD , WALTER GABRIEL
CPC分类号： H01S5/06203 , B82Y20/00 , H01S5/06226 , H01S5/18341 , H01S5/305 , H01S5/3095 , H01S5/3211 , H01S5/3412 , H01S5/34313 , H01S5/4031
摘要： A method for producing an optical output includes the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals. Also disclosed in an improved pnp transistor laser and a technique for switching back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode.
摘要翻译：一种用于产生光输出的方法包括以下步骤：提供第一和第二电信号; 提供包括集电极区，基极区和发射极区的双极型发光晶体管器件; 提供与集电极区域耦合的集电极电极和与发射极区域耦合的发射极电极，并且相对于集电极电极和发射极电极耦合电势; 提供与所述基极区域光通信的光耦合; 提供与基极区耦合的第一和第二基极; 以及分别将所述第一和第二电信号与所述第一和第二基极耦合以产生从所述基极区发射并且耦合到所述光耦合中的光输出，所述光输出是所述第一和第二电信号的函数。还公开了改进的pnp晶体管激光器和用于在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换的技术。

5. 发明申请

WO2005020287A2 SEMICONDUCTOR DEVICE AND METHOD 审中-公开
标题翻译：半导体器件和方法
公开(公告)号：WO2005020287A2
公开(公告)日：2005-03-03
申请号：PCT/US2004027019
申请日：2004-08-20
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , HAFEZ WALID
发明人： FENG MILTON , HOLONYAK NICK JR , HAFEZ WALID
IPC分类号： H01L20060101 , H01L29/205 , H01L29/737 , H01L33/00 , H01S5/062 , H01L
CPC分类号： H01S5/06203
摘要： Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region.
摘要翻译：公开了用于从双极晶体管产生可控光发射的方法和装置。此外，公开了一种用于提高双极晶体管的速度的方法，包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 提供用于将电信号与发射极，基极和集电极区域耦合的电极; 并且使基极区域适应于增强受激发射而不利于自发发射，从而降低基区的载流子复合寿命。

6. 发明申请

WO2009051663A2 TRANSISTOR DEVICE AND METHOD 审中-公开
标题翻译：晶体管器件及方法
公开(公告)号：WO2009051663A2
公开(公告)日：2009-04-23
申请号：PCT/US2008011652
申请日：2008-10-10
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR
发明人： FENG MILTON , HOLONYAK NICK JR
IPC分类号： H01L21/331 , H01L29/73
CPC分类号： H01L29/7371 , H01L29/1004 , H01L29/2003 , H01L29/205
摘要： A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain layers, the layers being separated by heterosteps; the gate layer having a thickness of less than about 100 Angstroms; and source, gate, and drain electrodes respectively coupled with said source, gate, and drain layers. Separation of the gate by heterosteps, rather than an oxide layer, has very substantial advantages.
摘要翻译：一种场效应晶体管器件，包括：半导体异质结构，其包括在垂直堆叠构造中的半导体源极和漏极层之间的半导体栅极层，所述层被异质体分离; 所述栅极层的厚度小于约100埃; 以及分别与所述源极，栅极和漏极层耦合的源极，栅极和漏极。通过异质体而不是氧化物层分离栅极具有非常显着的优点。

7. 发明申请

WO2005020287A9 SEMICONDUCTOR DEVICE AND METHOD 审中-公开
标题翻译：半导体器件和方法
公开(公告)号：WO2005020287A9
公开(公告)日：2005-03-31
申请号：PCT/US2004027019
申请日：2004-08-20
申请人： UNIV ILLINOIS , FENG MILTON , HOLONYAK NICK JR , HAFEZ WALID
发明人： FENG MILTON , HOLONYAK NICK JR , HAFEZ WALID
IPC分类号： H01L20060101 , H01L29/205 , H01L29/737 , H01L33/00 , H01S5/062 , H01L
CPC分类号： H01S5/06203
摘要： Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signals with the emitter (150), base (140), and collector (130) regions; and adapting the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140).
摘要翻译：公开了用于从双极晶体管产生可控发光的方法和装置。此外，公开了一种用于增加双极晶体管的速度的方法，包括以下步骤：提供具有发射极（150），基极（140）和集电极（130）区域的双极晶体管; 提供用于将电信号与发射极（150），基极（140）和集电极（130）区域耦合的电极（115,145,165）以及使所述基极区域（140）适应于增强受激发射以损害自发发射，以便降低所述基极区域（140）中的载流子复合寿命。

8. 发明申请

WO03034457A3 HIGH CYCLE MEMS DEVICE 审中-公开
标题翻译：高周期MEMS器件
公开(公告)号：WO03034457A3
公开(公告)日：2003-10-16
申请号：PCT/US0231088
申请日：2002-10-01
申请人： UNIV ILLINOIS
发明人： FENG MILTON , HOLONYAK NICK JR , BECHER DAVID , SHEN SHYH-CHIANG , CHAN RICHARD
IPC分类号： H01H59/00 , H01H57/00
CPC分类号： H01H59/0009 , H01H2001/0084 , H01H2059/0072
摘要： A high life cycle and low voltage MEMS device. In an aspect of the invention, separate support posts (26) are disposed to prevent a suspended switch pad (12) from touching the actuation pad (16) while permitting the switch pad (12) to ground a signal line (10). In another aspect of the invention, cantilevered support beams (14) are made from a thicker material than the switching pad (12). Increased thickness material in the cantilever (14) tends to keep the switch flat in its resting position. Features of preferred embodiments include dimples in the switch pad to facilitate contact with a signal line (10) and serpentine cantilevers (14) arranged symmetrically to support the switch pad (12).
摘要翻译：高寿命周期和低电压MEMS器件。在本发明的一个方面，设置分开的支撑柱（26）以防止悬挂的开关垫（12）在允许开关垫（12）将信号线（10）接地的同时接触致动垫（16）。在本发明的另一方面，悬臂支撑梁（14）由比切换垫（12）更厚的材料制成。悬臂（14）中增加的厚度材料倾向于将开关保持在其静止位置。优选实施例的特征包括开关板中的凹坑，以便于与信号线（10）和对称布置以支撑开关垫（12）的蛇形悬臂（14）的接触。

9. 发明申请

WO03012834A9 COUPLED QUANTUM DOT AND QUANTUM WELL SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：耦合量子点和量子半导体器件及其制造方法
公开(公告)号：WO03012834A9
公开(公告)日：2004-02-26
申请号：PCT/US0224379
申请日：2002-07-31
申请人： UNIV ILLINOIS , UNIV TEXAS
发明人： HOLONYAK NICK JR , DUPUIS RUSSELL
IPC分类号： H01L29/06 , H01L29/12 , H01L29/66 , H01L33/06 , H01S5/34 , H01S5/343 , H01L21/00
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/125 , H01L29/127 , H01L33/06 , H01S5/341 , H01S5/3412 , H01S5/3416 , H01S5/3425
摘要： A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots (825, 875) disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.
摘要翻译：一种形成半导体器件的方法包括以下步骤：提供多个半导体层; 提供用于将信号耦合到和/或来自该设备的层的装置; 提供设置在所述装置的相邻层之间的量子阱; 并且提供设置在相邻层之一中并与量子阱间隔开的一层量子点（825,875），由此载流子可以在量子阱和量子点之间的任一方向上隧道。

10. 发明申请

WO1982003946A1 METHOD OF FORMING WIDE BANDGAP REGION WITHIN A MULTILAYER III-V SEMICONDUCTORS 审中-公开
标题翻译：在多层III-V半导体中形成宽带区域的方法
公开(公告)号：WO1982003946A1
公开(公告)日：1982-11-11
申请号：PCT/US1982000574
申请日：1982-05-04
申请人： UNIV ILLINOIS
发明人： UNIV ILLINOIS , HOLONYAK NICK JR , LAIDIG WYN DAVIS
IPC分类号： H01L21/76
CPC分类号： H01S5/026 , H01L21/182 , H01L21/2654 , H01L21/26546 , H01L21/26586 , H01L21/7605 , H01S5/20 , H01S5/2059
摘要： Method for converting a multilayer semiconductor structure (20), that includes active semiconductor regions (22) interposed between semiconductor barrier layers (24), into a disordered alloy by selective introduction of a disordering Zn, Si or As elements or ions into the multilayer structure. The disordered alloy exhibits wider energy band-gap while still retaining single crystallinity. The process is illustratively used to make Schottky barrier field effect transistor (fig. 5), light emitting diode (fig. 3-4) and intergrated electro-optical device (fig. 6).
摘要翻译：通过选择性地将无序Zn，Si或As元素或离子引入到多层结构中，将包含介于半导体势垒层（24）之间的有源半导体区域（22））的多层半导体结构（20）转换为无序合金的方法。无序合金表现出更宽的能带隙，同时仍保持单一结晶度。该过程示例性地用于制造肖特基势垒场效应晶体管（图5），发光二极管（图3-4）和集成电光器件（图6））。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式