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1. 发明申请

WO0201644A3 POWER MOSFET AND METHODS OF FORMING AND OPERATING THE SAME 审中-公开
标题翻译：功率MOSFET及其形成和操作的方法
公开(公告)号：WO0201644A3
公开(公告)日：2002-07-04
申请号：PCT/US0118072
申请日：2001-06-05
申请人： SILICON WIRELESS CORP , GIANT SEMICONDUCTOR CORP , BALIGA BANTVAL JAYANT
发明人： BALIGA BANTVAL JAYANT
IPC分类号： H01L21/8234 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/772 , H01L29/78 , H01L21/336 , H01L29/36
CPC分类号： H01L29/7816 , H01L21/823487 , H01L27/088 , H01L29/063 , H01L29/0634 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/7722 , H01L29/7802 , H01L29/7813 , H01L29/7832
摘要： In power MOSFET embodiments of the present invention which provide highly linear transfer characteristics and can be used effectively in linear power amplifiers a relatively highly doped transition region (117) is preferably provided between the channel region (116) and the drift region (112). Upon depletion, this transition region provides a potential barrier that supports separate and simultaneous linear and current saturation modes.
摘要翻译：在本发明的功率MOSFET实施例中，提供高度线性的传输特性并且可以有效地用于线性功率放大器中，优选地，在沟道区（116）和漂移区（112）之间提供相对高掺杂的过渡区（117）。在耗尽时，该过渡区域提供支持分离和同时线性和电流饱和模式的势垒。

2. 发明申请

WO0241402A3 DISCRETE AND PACKAGED POWER DEVICES FOR RADIO FREQUENCY (RF) APPLICATIONS AND METHODS OF FORMING SAME 审中-公开
标题翻译：用于无线电频率（RF）应用的分离和封装功率器件及其形成方法
公开(公告)号：WO0241402A3
公开(公告)日：2004-02-26
申请号：PCT/US0144168
申请日：2001-11-05
申请人： SILICON WIRELESS CORP , BALIGA BANTVAL JAYANT
发明人： BALIGA BANTVAL JAYANT
IPC分类号： H01L21/336 , H01L23/552 , H01L23/60 , H01L23/66 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/78 , H01L23/047 , H01L23/492 , H01L27/06 , H01L29/41
CPC分类号： H01L23/66 , H01L23/552 , H01L23/60 , H01L24/37 , H01L24/40 , H01L24/41 , H01L27/088 , H01L29/0696 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/4238 , H01L29/66712 , H01L29/7802 , H01L29/7803 , H01L29/7813 , H01L2223/6627 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/83801 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/1903 , H01L2924/3011 , H01L2924/00 , H01L2924/00014
摘要： Integrated power devices include a plurality of field effect transistor unit cells and a Faraday shield layer that reduces parasitic gate-to-drain capacitance (Cgd) and concomitantly improves high frequency switching performance. These power devices may include a field effect transistor in an active portion of a semiconductor substrate and a gate electrode that is electrically connected to a gate of the field effect transistor. A Faraday shield layer is provided between at least a first portion of the gate electrode and a drain of the field effect transistor in order to capacitively decouple the first portion of the gate electrode from the drain. The gate electrode and drain typically extend adjacent opposing faces of the semiconductor substrate. The Faraday shield layer is preferably electrically connected to a source of the field effect transistor and provides edge termination.
摘要翻译：集成的功率器件包括多个场效应晶体管单元单元和减小寄生栅 - 漏电容（Cgd）的法拉第屏蔽层，并且伴随地提高了高频开关性能。这些功率器件可以包括在半导体衬底的有源部分中的场效应晶体管和电连接到场效应晶体管的栅极的栅电极。在栅电极的至少第一部分和场效应晶体管的漏极之间设置法拉第屏蔽层，以便电容性地将栅电极的第一部分与漏极分离。栅电极和漏极通常延伸相邻的半导体衬底的相对面。法拉第屏蔽层优选地电连接到场效应晶体管的源极并且提供边缘终止。

3. 发明申请

WO02084745A3 POWER SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME 审中-公开
标题翻译：功率半导体器件及其形成方法
公开(公告)号：WO02084745A3
公开(公告)日：2003-08-21
申请号：PCT/US0212775
申请日：2002-04-05
申请人： SILICON WIRELESS CORP , BALIGA BANTVAL JAYANT
发明人： BALIGA BANTVAL JAYANT
IPC分类号： H01L21/76 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/40 , H01L29/417 , H01L29/78 , H01L29/872 , H01L21/336 , H01L29/36
CPC分类号： H01L29/0878 , H01L29/0847 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/66727 , H01L29/7802 , H01L29/7806 , H01L29/872
摘要： A power MOSFET (10) includes a semiconductor substrate having a drift region therein (102) and a transition region (130) that extends between the drift region and a first surface (102a) of the semiconductor substrate. The transition region (130) has a vertically retrograded doping profile therein that peaks at a first depth relative to the first surface (102a). First and second base shielding regions (128) are moreover provided under respective first and second base regions (126) to deplete the transition region (130).
摘要翻译：功率MOSFET（10）包括其中具有漂移区（102）的半导体衬底和在所述漂移区和所述半导体衬底的第一表面（102a）之间延伸的过渡区（130）。过渡区域（130）在其中具有垂直退化的掺杂分布，其中相对于第一表面（102a）在第一深度处达到峰值。此外，在相应的第一和第二基区（126）下设置第一和第二基底屏蔽区域（128）以消耗过渡区域（130）。

4. 发明申请

WO0025365A3 POWER SEMICONDUCTOR DEVICES HAVING IMPROVED HIGH FREQUENCY SWITCHING AND BREAKDOWN CHARACTERISTICS 审中-公开
标题翻译：具有改进的高频切换和断开特性的功率半导体器件
公开(公告)号：WO0025365A3
公开(公告)日：2001-09-07
申请号：PCT/US9924539
申请日：1999-10-20
申请人： UNIV NORTH CAROLINA STATE , BALIGA BANTVAL JAYANT
发明人： BALIGA BANTVAL JAYANT
IPC分类号： H01L21/8234 , H01L27/04 , H01L27/088 , H01L27/095 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/088 , H01L27/095 , H01L29/0878 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/7806 , H01L29/7808 , H01L29/7811 , H01L29/8725 , H01L2924/0002 , H01L2924/00
摘要： Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower-trench based source electrodes. The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.
摘要翻译：具有改进的高频切换性能，改进的边缘终止特性和降低的导通状态电阻的集成功率半导体器件包括具有上沟槽基栅极电极和下沟槽基源电极的GD-UMOSFET单元电池。使用基于沟槽的源电极代替较大的栅电极减小了UMOSFET的栅 - 漏电容（CGD），并且通过减少在高频操作期间所需的栅极充电和放电电流的量来提高开关速度。

5. 发明申请

WO0070684A3 SILICON CARBIDE POWER DEVICES COMPRISING CHARGE COUPLING REGIONS 审中-公开
标题翻译：包含充电耦合区域的碳化硅电力装置
公开(公告)号：WO0070684A3
公开(公告)日：2001-06-14
申请号：PCT/US0013455
申请日：2000-05-16
申请人： UNIV NORTH CAROLINA STATE , BALIGA BANTVAL JAYANT
发明人： BALIGA BANTVAL JAYANT
IPC分类号： H01L29/06 , H01L29/24 , H01L29/40 , H01L29/78 , H01L29/808 , H01L29/872
CPC分类号： H01L29/408 , H01L29/0619 , H01L29/0634 , H01L29/0649 , H01L29/1608 , H01L29/7813 , H01L29/8083 , H01L29/872
摘要： Silicon carbide power devices (10, 10', 30) having trench-based charge coupling regions include a silicon carbide substrate having a silicon carbide drift region (12) of first conductivity type (e.g., N-type) and a trench (T1, T2) therein at a first face (11a) thereof. A uniformly doped silicon carbide charge coupling region (14a, 14b) of second conductivity type is also provided in the trench. This charge coupling region forms a P-N rectifying junction with the drift region that extends along a sidewall of the trench. The drift region and charge coupling region are both uniformly doped at equivalent and relatively high net majority carrier doping concentrations. Siilicon carbide switching devices that use the present charge coupling regions include Schottky barrier rectifiers (SBRs) (10, 10'), junction field effect transistors (JFETs) (30) and metal-oxide-semiconductor field effect transistors (MOSFETs) (30). Alternatively, the charge coupling regions may be replaced by semi-insulting regions.
摘要翻译：具有基于沟槽的电荷耦合区域的碳化硅功率器件（10,10'，30）包括具有第一导电类型（例如，N型）的碳化硅漂移区（12）和沟槽（T1， T2）的第一面（11a）。在沟槽中还提供了第二导电类型的均匀掺杂的碳化硅电荷耦合区域（14a，14b）。该电荷耦合区域与沿着沟槽的侧壁延伸的漂移区域形成P-N整流结。漂移区域和电荷耦合区域都以相等和相对较高的净多数载流子掺杂浓度均匀掺杂。使用本电荷耦合区的硅碳化物开关器件包括肖特基势垒整流器（SBR）（10,10'），结场效应晶体管（JFET）（30）和金属氧化物半导体场效应晶体管（MOSFET）30。。或者，电荷耦合区域可以由半绝缘区域代替。

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