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1. 发明申请

WO2006074933A1 METHOD OF PRODUCING A SUBSTRATE FOR AN OPTOELECTRONIC APPLICATION 审中-公开
标题翻译：生产用于光电子应用的基板的方法
公开(公告)号：WO2006074933A1
公开(公告)日：2006-07-20
申请号：PCT/EP2006/000230
申请日：2006-01-12
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. , LETERTRE, Fabrice , FAURE, Bruce
发明人： LETERTRE, Fabrice , FAURE, Bruce
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L31/1892 , H01L21/2007 , H01L21/76254 , H01L33/0079 , Y02E10/50
摘要： The present invention relates to a method of producing a substrate for an optoelectronic application, the substrate having at least one active nitride layer on a final carrier and a metallic intermediate layer therebetween, wherein the method comprises: preparation of an auxiliary substrate wherein one semi-conducting nitride layer is placed on an auxiliary carrier; metallising the auxiliary substrate on the side of the nitride layer; bonding of the metallised carrier substrate with the final carrier; and removing of the auxiliary carrier after the bonding step. It is the object of the present invention to provide a method of this type in which the crystalline quality of the active nitride layer(s) can be improved. The object is solved by a method of the above mentioned type wherein the step of preparing the auxiliary substrate comprises: detaching a part from a massive semi-conducting nitride substrate; and transferring said part onto the auxiliary carrier to form the semi-conducting nitride layer thereon.
摘要翻译：本发明涉及一种制备光电子应用基片的方法，该基底在最终载体上具有至少一个活性氮化物层和其间的金属中间层，其中所述方法包括：制备辅助基底，其中，导电氮化物层放置在辅助载体上; 在氮化物层的侧面对辅助衬底进行金属化; 金属化载体基板与最终载体的接合; 以及在接合步骤之后去除辅助载体。本发明的目的是提供一种可以提高活性氮化物层的结晶质量的方法。该目的通过上述类型的方法来解决，其中准备辅助衬底的步骤包括：从块状半导体氮化物衬底分离一部分; 并将所述部分转移到辅助载体上以在其上形成半导电氮化物层。

2. 发明申请

WO2006082467A1 SUBSTRATE FOR CRYSTAL GROWING A NITRIDE SEMICONDUCTOR 审中-公开
标题翻译：用于晶体生长的氮化物半导体基板
公开(公告)号：WO2006082467A1
公开(公告)日：2006-08-10
申请号：PCT/IB2005/000436
申请日：2005-02-01
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , PICOGIGA INTERNATIONAL , FAURE, Bruce , LETERTRE, Fabrice , LAHRECHE, Hacène
发明人： FAURE, Bruce , LETERTRE, Fabrice , LAHRECHE, Hacène
IPC分类号： C30B23/02 , C30B29/38 , C30B29/40 , H01L21/762
CPC分类号： C30B25/02 , C30B23/02 , C30B29/403 , H01L21/76254
摘要： The invention relates to a substrate (10) for crystalline growing an alloy, comprising at least one atomic element of column III and nitrogen, on the front side (1) of the substrate (10), characterized in that the substrate (10) comprises in its rear side (2) a rear layer (12) of a non-metallic infraredabsorptive/emittive material. The invention also relates to a wafer comprising such a substrate and a layer grown on this substrate. The invention also relates to the method of manufacturing the said substrate.
摘要翻译：本发明涉及在衬底（10）的前侧（1）上用于结晶生长合金的衬底（10），其包含至少一个第三列原子元素和氮，其特征在于，所述衬底（10）包括在其后侧（2）是非金属红外吸收/发射材料的后层（12）。本发明还涉及包含这种基底和在该基底上生长的层的晶片。本发明还涉及制造所述衬底的方法。

3. 发明申请

WO2010015878A2 PROCESS FOR MODIFYING A SUBSTRATE 审中-公开
标题翻译：修改基板的工艺
公开(公告)号：WO2010015878A2
公开(公告)日：2010-02-11
申请号：PCT/IB2008/003101
申请日：2008-09-08
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PHILIPS LUMILEDS LIGHTING COMPANY LLC , FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
发明人： FAURE, Bruce , LETERTRE, Fabrice , WIERER, Jonathan, J., Jr.
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762 , H01L21/324
CPC分类号： H01L21/76251 , H01L21/6835 , H01L31/1892 , H01L33/0079 , H01L2221/68327 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381 , Y02E10/50
摘要： The invention relates to a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (10r); (b) providing a support substrate (25); wherein either the bonding face (10b) of the initial substrate (10), and/or a face of the support substrate (25), is provided with an electromagnetic radiation absorbing layer (24), wherein the support substrate (25) is substantially transparent to a wavelength of electromagnetic radiation (c) performing bonding to join the bonding face (10b) of the initial substrate (10) to the support substrate (25) via the electromagnetic radiation absorbing layer (24); (e) carrying out irradiation of the electromagnetic radiation absorbing layer (24) through the substantially transparent support substrate (25) to induce separation of the support substrate (25).
摘要翻译：本发明涉及一种用于修改衬底（10）的方法，包括：（a）提供具有用于结合的面（10b）和相对面（10r）的初始衬底（10）; （b）提供支撑衬底（25）; 其中所述初始衬底（10）的接合面（10b）和/或所述支撑衬底（25）的表面中的任一个设置有电磁辐射吸收层（24），其中所述支撑衬底（25）基本上对电磁辐射的波长透明（c）进行接合以经由电磁辐射吸收层（24）将初始衬底（10）的接合面（10b）连接到支撑衬底（25）; （e）通过所述基本透明的支撑衬底（25）进行所述电磁辐射吸收层（24）的照射以引起所述支撑衬底（25）的分离。

4. 发明申请

WO2010015302A2 RELAXATION AND TRANSFER OF STRAINED LAYERS 审中-公开
标题翻译：应变层的松弛和转移
公开(公告)号：WO2010015302A2
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004792
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
发明人： LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal , KRAMES, Mike , MCLAURIN, Nelson , GARDNER, Nate
IPC分类号： H01L21/20 , H01L33/00 , H01L31/18 , H01L21/58 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention relates a method for the formation of at least partially relaxed strained material on a target substrate, comprising the subsequently performed steps of forming islands from a strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment and transferring the at least partially relaxed strained material islands to the target substrate.
摘要翻译：本发明涉及一种用于在目标基底上形成至少部分松弛的应变材料的方法，包括随后执行的步骤：从中间基底上的应变材料层形成岛，至少部分地通过第一热处理并将至少部分松弛的应变材料岛转移到目标衬底。

5. 发明申请

WO2010036622A1 METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME 审中-公开
标题翻译：形成半导体材料的松散层的方法，半导体结构，器件和包括其中的工程衬底
公开(公告)号：WO2010036622A1
公开(公告)日：2010-04-01
申请号：PCT/US2009/057734
申请日：2009-09-21
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , LETERTRE, Fabrice , FAURE, Bruce , KRAMES, Michael, R. , GARDNER, Nathan, F.
发明人： LETERTRE, Fabrice , FAURE, Bruce , KRAMES, Michael, R. , GARDNER, Nathan, F.
IPC分类号： H01L21/02
CPC分类号： H01L21/02639 , H01L21/02367 , H01L21/02389 , H01L21/02458 , H01L21/0254
摘要： Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.
摘要翻译：制造半导体材料的松弛层的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔性材料的粘度以减小半导体材料内的应变。在沉积第二层半导体材料期间，柔性材料可以回流。可以选择柔性材料，使得当沉积第二层半导体材料时，改变柔性材料的粘度赋予结构松弛性。在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。还公开了制造半导体结构和器件的方法。在这种方法中形成了新的中间结构。工程衬底包括多个结构，其包括设置在表现出可变粘度的材料层上的半导体材料。

6. 发明申请

WO2010094371A2 RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS 审中-公开
标题翻译：应变材料层的放松和转移
公开(公告)号：WO2010094371A2
公开(公告)日：2010-08-26
申请号：PCT/EP2010/000090
申请日：2010-01-11
申请人： S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal
发明人： LETERTRE, Fabrice , FAURE, Bruce , GUENARD, Pascal
IPC分类号： H01L21/20 , H01L21/762 , C30B29/38
CPC分类号： H01L21/02664 , C30B29/403 , C30B33/02 , C30B33/06 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/762 , H01L21/76254
摘要： The present invention relates a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
摘要翻译：本发明涉及形成至少部分松弛的应变材料层的方法，该方法包括以下步骤：提供种子基底; 图案化种子基底; 在图案化种子基底上生长应变材料层; 将所述应变材料层从所述图案化种子基底转移到中间基底; 并通过热处理至少部分地松弛应变材料层。

7. 发明申请

WO2005064320A1 DISPOSITIF ET PROCEDE D’OBSERVATION D’UNE INTERFACE DE COLLAGE 审中-公开
标题翻译：用于观察接合界面的装置和方法
公开(公告)号：WO2005064320A1
公开(公告)日：2005-07-14
申请号：PCT/FR2004/003361
申请日：2004-12-22
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE , S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES , TRACIT TECHNOLOGIES Centr'alp , MORICEAU, Hubert , FOURNEL, Franck , FAURE, Bruce , LETERTRE, Fabrice , ASPAR, Bernard , LAGAHE-BLANCHARD, Chrystelle
发明人： MORICEAU, Hubert , FOURNEL, Franck , FAURE, Bruce , LETERTRE, Fabrice , ASPAR, Bernard , LAGAHE-BLANCHARD, Chrystelle
IPC分类号： G01N21/88
CPC分类号： G01N21/8806
摘要： L'invention concerne un procédé de caractérisation de l'interface entre un premier élément (2), tel qu'un substrat ou une couche mince, et un deuxième élément (4), tel qu'un substrat ou une couche mince, comportant : - éclairer le premier élément avec un rayonnement (10) pour lequel il est au moins partiellement transparent, - détecter le rayonnement réfléchi par l'interface.
摘要翻译：本发明涉及一种用于表征诸如衬底或薄层的第一元件（2）与诸如衬底或薄层的第二元件（4）之间的界面的方法。根据所述方法，第一元件由其至少部分透明的辐射（10）照射，然后检测由界面反射的辐射。

8. 发明申请

WO2005014896A1 A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER 审中-公开
标题翻译：一种制造外观成层的方法
公开(公告)号：WO2005014896A1
公开(公告)日：2005-02-17
申请号：PCT/EP2004/007578
申请日：2004-07-07
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , LETERTRE, Fabrice , FAURE, Bruce
发明人： LETERTRE, Fabrice , FAURE, Bruce
IPC分类号： C30B25/02
CPC分类号： H01L21/76254 , C30B25/18 , C30B33/00 , Y10S438/928 , Y10S438/977
摘要： The invention concerns a method of fabricating an epitaxially grown layer (6), an epitaxy support (9,9') and its method of fabricating. This method is remarkable in that it comprises the following steps consisting in : a) implanting atomic species within a support substrate (1) to define therein a zone of weakness which demarcates a thin support layer (13) from the remainder (11) of said substrate ; b) transferring onto said thin layer (13) a thin nucleation layer (23) ; c) detaching said remainder (11) along said zone of weakness, but while maintaining the thin support layer (13) in contact with said remainder (11) ; d) growing said epitaxially grown layer (6) by epitaxy on said nucleation layer (23); and e) moving away the remainder (11) from the thin support layer (13). Application to the field of optics, opto-electronics, or electronics.
摘要翻译：本发明涉及制造外延生长层（6），外延支撑（9,9'）及其制造方法的方法。该方法是显着的，其包括以下步骤，其包括：a）在支撑衬底（1）内植入原子物质以在其中限定弱化区域，其将薄支撑层（13）与所述基质 ; b）将薄的成核层（23）转移到所述薄层（13）上。 c）沿着所述弱化区域分离所述剩余部分（11），同时保持所述薄支撑层（13）与所述剩余部分（11）接触; d）通过所述成核层（23）上的外延生长所述外延生长层（6）。以及e）从所述薄支撑层（13）移开剩余部分（11）。应用于光学，光电子学或电子学领域。

9. 发明申请

WO2010015301A8 PASSIVATION OF ETCHED SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：WO2010015301A8
公开(公告)日：2010-02-11
申请号：PCT/EP2009/004791
申请日：2009-07-02
申请人： S.O.I. TEC SILICON ON ISULATOR TECHNOLOGIES , FAURE, Bruce , GUENARD, Pascal
发明人： FAURE, Bruce , GUENARD, Pascal
IPC分类号： H01L21/762 , H01L21/324 , H01L21/20
摘要： The present invention relates to a method for passivation of a semiconductor structure, comprising the steps providing at least one first material layer; forming at least one second material layer that is to be patterned above the first material layer; forming a diffusion barrier layer between the at least one second material layer and the at least one first material layer thereby forming a multilayer stack and patterning, in particular, etching, the at least one second material layer down to but not completely through the diffusion barrier layer and without exposing portions of the at least one first material layer such that diffusion of material of the at least one first material layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented. The invention also relates to a method for passivation of a semiconductor structure, comprising the steps providing a multilayer stack comprising at least one buried layer formed below a second material layer; patterning, in particular, etching, the surface of the multilayer stack through the second material layer thereby exposing portions of the at least one buried layer and depositing a diffusion barrier layer at least on the exposed portions of the at least one buried layer such that diffusion of material of the at least one buried layer through the diffusion barrier layer during a subsequent heat treatment of the multilayer stack is substantially prevented.

10. 发明申请

WO2006000691A1 SUPPORT D'EPITAXIE HYBRIDE ET SON PROCEDE DE FABRICATION 审中-公开
标题翻译：混合外延支持及其制作方法
公开(公告)号：WO2006000691A1
公开(公告)日：2006-01-05
申请号：PCT/FR2005/001353
申请日：2005-06-02
申请人： S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , FAURE, Bruce , LAHRECHE, Hacene
发明人： FAURE, Bruce , LAHRECHE, Hacene
IPC分类号： H01L21/762
CPC分类号： C30B33/00 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/76254 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Procédé de réalisation d'un support d'épitaxie, comportant la formation, dans un premier substrat (2) de carbure de silicium (SiC) ou de nitrure de gallium (GaN) monocristallin conducteur, d'une couche (14) de carbure de silicium monocristallin isolant ou de nitrure de gallium monocristallin isolant. Le procédé comprend en outre le report de cette couche de carbure de silicium ou de nitrure de gallium monocristallin sur un deuxième substrat (4) en matériau céramique polycristallin ayant une conductivité thermique supérieure ou égale à 1,5 W.cm -1 .K -1 . Ce procédé permet de réaliser des composants électroniques économiques et performants, notamment pour des applications haute-fréquences de puissance.
摘要翻译：本发明涉及一种用于制造外延支撑件的方法，包括在第一单晶导电碳化硅（SiC）或单晶氮化镓（GaN）衬底，绝缘单晶碳化硅或绝缘单晶氮化镓层中形成。该方法还包括将所述单晶碳化硅或氮化镓层转移到由多晶陶瓷材料制成的第二衬底（4）上，所述多晶陶瓷材料具有不小于1.5W / cm 2的热导率。 -1 。该方法能够制造经济和有效的电子部件，特别是用于电力高频应用。

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