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    • 6. 发明申请
    • LOW COST INTERPOSER COMPRISING AN OXIDATION LAYER
    • 包含氧化层的低成本间隙器
    • WO2014168946A1
    • 2014-10-16
    • PCT/US2014/033329
    • 2014-04-08
    • QUALCOMM INCORPORATED
    • GU, ShiqunRAY, UrmiCHEN, RoawenHENDERSON, Brian MatthewRADOJCIC, RatiborNOWAK, MatthewYU, Nicholas
    • H01L23/498H01L21/48
    • H01L23/49811H01L21/486H01L23/147H01L23/49827H01L2224/16225H01L2924/15311
    • Some implementations provide an interposer that includes a substrate, a via in the substrate, and an oxidation layer. The via includes a metal material. The oxidation layer is between the via and the substrate. In some implementations, the substrate is a silicon substrate. In some implementations, the oxidation layer is a thermal oxide formed by exposing the substrate to heat. In some implementations, the oxidation layer is configured to provide electrical insulation between the via and the substrate. In some implementations, the interposer also includes an insulation layer. In some implementations, the insulation layer is a polymer layer. In some implementations, the interposer also includes at least one interconnect on the surface of the interposer. The at least one interconnect is positioned on the surface of the interposer such that the oxidation layer is between the interconnect and the substrate.
    • 一些实施方案提供了一种插入器,其包括衬底,衬底中的通孔和氧化层。 通孔包括金属材料。 氧化层位于通孔和衬底之间。 在一些实施方式中,衬底是硅衬底。 在一些实施方案中,氧化层是通过将基底暴露于热而形成的热氧化物。 在一些实施方案中,氧化层被配置为在通孔和基底之间提供电绝缘。 在一些实施方案中,插入件还包括绝缘层。 在一些实施方案中,绝缘层是聚合物层。 在一些实现中,插入器还包括在插入器的表面上的至少一个互连。 所述至少一个互连件位于所述插入件的表面上,使得所述氧化层位于所述互连件和所述基板之间。