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    • 8. 发明申请
    • DRIVER USING PULL-UP NMOS TRANSISTOR
    • 驱动器使用拉高NMOS晶体管
    • WO2016153778A1
    • 2016-09-29
    • PCT/US2016/021397
    • 2016-03-08
    • QUALCOMM INCORPORATED
    • THILENIUS, Stephen CliffordISAKANIAN, PatrickLOKE, Alvin Leng SunBRYAN, Thomas ClarkPETERSON, LuVerne Ray
    • H03K19/0185G11C7/10
    • H03K19/017518G11C7/1057H03K5/14H03K19/018507
    • In one embodiment, a system comprises a pre-driver circuit and a driver. The pre-driver circuit is powered by a first supply voltage, and configured to output a pre-drive signal. The driver comprises a pull-up NMOS transistor having a drain coupled to a second supply voltage, and a source coupled to an output of the driver, wherein the second supply voltage is lower than the first supply voltage by at least a threshold voltage of the pull-up NMOS transistor. The driver also comprises a drive circuit coupled to a gate of the pull-up NMOS transistor, wherein the drive circuit is configured to receive the pre-drive signal and to drive the gate of the pull-up NMOS transistor with a voltage approximately equal to the first supply voltage to drive the output of the driver to a high state depending on a logic state of the pre-drive signal.
    • 在一个实施例中,系统包括预驱动器电路和驱动器。 预驱动器电路由第一电源电压供电,并且被配置为输出预驱动信号。 驱动器包括具有耦合到第二电源电压的漏极的上拉NMOS晶体管和耦合到驱动器的输出的源,其中第二电源电压低于第一电源电压至少一个阈值电压 上拉式NMOS晶体管。 驱动器还包括耦合到上拉NMOS晶体管的栅极的驱动电路,其中驱动电路被配置为接收预驱动信号并且驱动上拉NMOS晶体管的栅极,其电压近似等于 根据预驱动信号的逻辑状态,第一电源电压将驱动器的输出驱动到高电平状态。
    • 9. 发明申请
    • TRANSISTORS CONFIGURED FOR GATE OVERBIASING AND CIRCUITS THEREFROM
    • 晶闸管配置为栅极过渡和电路
    • WO2016144482A1
    • 2016-09-15
    • PCT/US2016/017733
    • 2016-02-12
    • QUALCOMM INCORPORATED
    • LOKE, Alvin Leng SunYU, BoTHILENIUS, Steven CliffordJALILIZEINALI, RezaISAKANIAN, Patrick
    • H03K19/003H03K19/0185
    • H03K17/0822H03K19/00315H03K19/018521
    • An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.
    • 提供电子电路和操作电子电路的方法。 电子电路包括用于将输出电路的输入/输出(I / O)节点提升到第一电压的上拉晶体管和用于将上拉晶体管耦合到I / O节点的第一隔离晶体管。 电子电路还包括用于将I / O节点下拉到第二电压的下拉晶体管和用于将下拉晶体管耦合到I / O节点的第二隔离晶体管。 在电子电路中,上拉和下拉晶体管是支持第一漏极 - 源极电压和第一栅极 - 源极电压的晶体管,而第一和第二隔离晶体管是支撑第一漏极 并且第二栅极至源极电压大于第一栅极至源极电压。