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1. 发明申请

WO2011050043A3 POWER TRANSISTOR WITH IMPROVED HIGH-SIDE OPERATING CHARACTERISTICS AND REDUCED RESISTANCE AND RELATED APPARATUS AND METHOD 审中-公开
标题翻译：功率晶体管，具有改善的高端操作特性和降低的电阻，以及相关的装置和方法
公开(公告)号：WO2011050043A3
公开(公告)日：2011-08-11
申请号：PCT/US2010053348
申请日：2010-10-20
申请人： NAT SEMICONDUCTOR CORP , FRENCH WILLIAM , SMEYS PETER , HOPPER PETER J , JOHNSON PETER
发明人： FRENCH WILLIAM , SMEYS PETER , HOPPER PETER J , JOHNSON PETER
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L21/76898 , H01L29/407 , H01L29/66659
摘要： A method includes forming a transistor device (100) on a first side of a semiconductor-on-insulator structure. The semiconductor-on-insulator structure includes a substrate (105, 505), a dielectric layer (140, 520), and a buried layer (135, 507) between the substrate and the dielectric layer. The method also includes forming a conductive plug (150, 160, 605) through the semiconductor-on-insulator structure. The conductive plug is in electrical connection with the transistor device. The method further includes forming a field plate (145, 1510) on a second side of the semiconductor-on-insulator structure, where the field plate is in electrical connection with the conductive plug. The transistor device could have a breakdown voltage of at least 600V, and the field plate could extend along at least 40% of a length of the transistor device.
摘要翻译：一种方法包括在绝缘体上半导体结构的第一侧上形成晶体管器件（100）。绝缘体上半导体结构包括在衬底和介电层之间的衬底（105,505），电介质层（140,520）和掩埋层（135,507）。该方法还包括形成穿过绝缘体上半导体结构的导电插塞（150,160,605）。导电插头与晶体管器件电连接。该方法还包括在绝缘体上半导体结构的第二侧上形成场板（145,1510），其中场板与导电插塞电连接。晶体管器件可以具有至少600V的击穿电压，并且场板可以沿着晶体管器件的至少40％的长度延伸。

2. 发明申请

WO2012012108A3 GALVANIC ISOLATION TRANSFORMER 审中-公开
标题翻译： GALVANIC隔离变压器
公开(公告)号：WO2012012108A3
公开(公告)日：2012-04-26
申请号：PCT/US2011041951
申请日：2011-06-27
申请人： NAT SEMICONDUCTOR CORP , FRENCH WILLIAM , HOPPER PETER J , SMEYS PETER , GABRYS ANN , ANDERSON DAVID I
发明人： FRENCH WILLIAM , HOPPER PETER J , SMEYS PETER , GABRYS ANN , ANDERSON DAVID I
IPC分类号： H01F38/40 , H01L25/00
CPC分类号： H01L23/645 , H01F2019/085 , H01L24/48 , H01L25/0655 , H01L2224/48091 , H01L2924/00014 , H01L2924/10253 , H01L2924/12041 , H01L2924/12043 , H01L2924/14 , H01L2924/15747 , H01L2924/19105 , H01L2924/3011 , Y10T29/49128 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit die system comprises a first integrated circuit die, a second integrated circuit die and a transformer formed on a dielectric (e.g., quartz) substrate and electrically connected between the first integrated circuit die and the second integrated circuit die to provide galvanic isolation therebetween.
摘要翻译：集成电路管芯系统包括第一集成电路管芯，第二集成电路管芯和形成在电介质（例如，石英））衬底上并电连接在第一集成电路管芯和第二集成电路管芯之间的变压器，以在其间提供电流隔离。

3. 发明申请

WO2010096180A2 ADAPTIVE ENERGY MANAGEMENT TERMINAL FOR A BATTERY 审中-公开
标题翻译：自适应电源管理终端
公开(公告)号：WO2010096180A2
公开(公告)日：2010-08-26
申请号：PCT/US2010000483
申请日：2010-02-19
申请人： NAT SEMICONDUCTOR CORP , HOPPER PETER J , HWANG KYUWOON , FRENCH WILLIAM , LIU QINGGUO
发明人： HOPPER PETER J , HWANG KYUWOON , FRENCH WILLIAM , LIU QINGGUO
IPC分类号： H01M10/44 , G01R31/36 , H01M2/10 , H01M10/48 , H02J7/00
CPC分类号： B60L11/1861 , B60L2240/545 , B60L2240/547 , B60L2240/549 , G01R31/007 , G01R31/3606 , G01R31/3662 , H01M10/04 , H01M10/4257 , H01M10/448 , H01M10/48 , H02J7/0063 , Y02T10/7011 , Y02T10/7044 , Y02T10/705
摘要： A battery (210, 300, 400, 1100, 1200, 1600) includes multiple conductive plates (220, 230) and a permeable electrolytic material (310, 320, 412a-412n) and an ion membrane (240) located between the conductive plates. The battery also includes at least one wire (200, 201, 1610) located within one or more of the permeable electrolytic material and the ion membrane. The at least one wire can be configured to regulate a flow of ions through the ion membrane based on an electrical signal flowing through the at least one wire. The at least one wire could also be configured to generate a magnetic field (500) within the permeable electrolytic material based on another electrical signal flowing through the at least one wire. The battery could further include a temperature sensor wire (1110, R) within the permeable electrolytic material.
摘要翻译：电池（210,300,400,1100,1200,1600）包括多个导电板（220,230）和可渗透的电解材料（310,320,412a-412n）和位于导电板之间的离子膜（240）。该电池还包括位于一个或多个可渗透电解材料和离子膜内的至少一根线（200,201,1610）。所述至少一根导线可以被配置成基于流过所述至少一根导线的电信号来调节通过所述离子膜的离子流。所述至少一根导线还可以被配置为基于流过所述至少一根导线的另一电信号在所述可渗透电解材料内产生磁场（500）。电池还可以包括可渗透电解材料内的温度传感器线（1110，R）。

4. 发明申请

WO2011047012A2 INTEGRATED DRIVER SYSTEM ARCHITECTURE FOR LIGHT EMITTING DIODES (LEDS) 审中-公开
标题翻译：发光二极管集成驱动器系统架构（LED）
公开(公告)号：WO2011047012A2
公开(公告)日：2011-04-21
申请号：PCT/US2010052456
申请日：2010-10-13
申请人： NAT SEMICONDUCTOR CORP , HOPPER PETER J , GABRYS ANN M , FRENCH WILLIAM
发明人： HOPPER PETER J , GABRYS ANN M , FRENCH WILLIAM
IPC分类号： H05B37/02
CPC分类号： H05K1/165 , H05B33/0803 , H05B33/0815 , H05K1/162 , H05K1/186 , H05K2201/086 , H05K2201/10106
摘要： A method includes forming one or more capacitors (104, 104a-104b, 508, 520) over a substrate (102). The method also includes forming a transformer (118, 512) at least partially over the substrate. The transformer is adjacent to at least one of the one or more capacitors. At least a portion of the transformer is formed at a same level over the substrate as the one or more capacitors. The method further includes coupling the one or more capacitors and the transformer to at least one embedded integrated circuit die (122). The one or more capacitors, the transformer, and the at least one embedded integrated circuit die form at least part of a light emitting diode (LED) driver.
摘要翻译：一种方法包括在衬底（102）上方形成一个或多个电容器（104,104a-104b，508,520）。该方法还包括至少部分地在衬底上形成变压器（118,512）。变压器与一个或多个电容器中的至少一个相邻。至少一部分变压器形成在与一个或多个电容器相同的基板上。该方法进一步包括将一个或多个电容器和变压器耦合到至少一个嵌入式集成电路管芯（122）。一个或多个电容器，变压器和至少一个嵌入式集成电路管芯形成发光二极管（LED）驱动器的至少一部分。

5. 发明申请

WO2010093444A3 MAGNETIC STATE OF CHARGE SENSOR FOR A BATTERY 审中-公开
标题翻译：电池充电传感器的磁性状态
公开(公告)号：WO2010093444A3
公开(公告)日：2010-11-04
申请号：PCT/US2010000380
申请日：2010-02-10
申请人： NAT SEMICONDUCTOR CORP , HOPPER PETER J , HWANG KYUWOON , DJABBARI ALI , FRENCH WILLIAM , LIU QINGGUO
发明人： HOPPER PETER J , HWANG KYUWOON , DJABBARI ALI , FRENCH WILLIAM , LIU QINGGUO
IPC分类号： H01M10/44 , B60L11/18 , G01R31/36 , H01M10/48 , H02J7/04
CPC分类号： G01R31/3606 , G01R31/007 , G01R31/3662 , H01M10/48 , H01M10/486
摘要： A battery (210, 300, 400, 1400, 1500) includes multiple conductive battery plates (220, 230) and a complex electrolytic material (310, 320, 412a-412n) located between the conductive battery plates. The battery also includes a conductive sensor wire (200, 201) located within the complex electrolytic material. The conductive sensor wire may be configured to generate a magnetic field (500) within the complex electrolytic material based on an electrical signal flowing through the conductive sensor wire. The battery may further include a temperature sensor wire (1410, R) within the complex electrolytic material.
摘要翻译：电池（210,300,400,1400,1500）包括位于导电电池板之间的多个导电电池板（220,230）和复合电解材料（310,320,412a-412n）。电池还包括位于复合电解材料内的导电传感器线（200,201）。导电传感器线可以被配置为基于流过导电传感器线的电信号在复合电解材料内产生磁场（500）。电池还可以包括复合电解材料内的温度传感器线（1410，R）。

6. 发明申请

WO2010096180A3 ADAPTIVE ENERGY MANAGEMENT TERMINAL FOR A BATTERY 审中-公开
标题翻译：电池的自适应能量管理终端
公开(公告)号：WO2010096180A3
公开(公告)日：2010-10-21
申请号：PCT/US2010000483
申请日：2010-02-19
申请人： NAT SEMICONDUCTOR CORP , HOPPER PETER J , HWANG KYUWOON , FRENCH WILLIAM , LIU QINGGUO
发明人： HOPPER PETER J , HWANG KYUWOON , FRENCH WILLIAM , LIU QINGGUO
IPC分类号： H01M10/44 , G01R31/36 , H01M2/10 , H01M10/48 , H02J7/00
CPC分类号： B60L11/1861 , B60L2240/545 , B60L2240/547 , B60L2240/549 , G01R31/007 , G01R31/3606 , G01R31/3662 , H01M10/04 , H01M10/4257 , H01M10/448 , H01M10/48 , H02J7/0063 , Y02T10/7011 , Y02T10/7044 , Y02T10/705
摘要： A battery (210, 300, 400, 1100, 1200, 1600) includes multiple conductive plates (220, 230) and a permeable electrolytic material (310, 320, 412a-412n) and an ion membrane (240) located between the conductive plates. The battery also includes at least one wire (200, 201, 1610) located within one or more of the permeable electrolytic material and the ion membrane. The at least one wire can be configured to regulate a flow of ions through the ion membrane based on an electrical signal flowing through the at least one wire. The at least one wire could also be configured to generate a magnetic field (500) within the permeable electrolytic material based on another electrical signal flowing through the at least one wire. The battery could further include a temperature sensor wire (1110, R) within the permeable electrolytic material.
摘要翻译：电池（210,300,400,1100,1200,1600）包括多个导电板（220,230）和可渗透电解质材料（310,320,412a-412n）以及位于导电板（220,320）之间的离子膜（240）。电池还包括位于一种或多种可渗透电解质材料和离子膜内的至少一根导线（200,201,1610）。所述至少一个导线可以被配置为基于流过所述至少一个导线的电信号来调节通过所述离子膜的离子流。所述至少一根导线还可以被配置为基于流过所述至少一根导线的另一电信号在可渗透电解质材料内产生磁场（500）。电池还可以包括可渗透电解质材料内的温度传感器导线（1110，R）。

7. 发明申请

WO2012142382A3 DMOS TRANSISTOR WITH A SLANTED SUPER JUNCTION DRIFT STRUCTURE 审中-公开
标题翻译：具有狭缝超级结构DRIFT结构的DMOS晶体管
公开(公告)号：WO2012142382A3
公开(公告)日：2013-03-14
申请号：PCT/US2012033473
申请日：2012-04-13
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , SADOVNIKOV ALEXEI , FRENCH WILLIAM , MAZOTTI ERIKA , FOOTE RICHARD WENDELL JR , HOPPER PETER J , BHOLA PUNIT , VASHCHENKO VLADISLAV
发明人： SADOVNIKOV ALEXEI , FRENCH WILLIAM , MAZOTTI ERIKA , FOOTE RICHARD WENDELL JR , HOPPER PETER J , BHOLA PUNIT , VASHCHENKO VLADISLAV
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/41766 , H01L29/0634 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/0882 , H01L29/1095 , H01L29/4236 , H01L29/66659 , H01L29/66712 , H01L29/66734 , H01L29/7802 , H01L29/7809 , H01L29/7813 , H01L29/7835
摘要： A DMOS transistor (200) with a lower on-state drain-to-source resistance and a higher breakdown voltage utilizes a slanted super junction drift structure (222) that lies along the side wall (218) of an opening (214) with the drain region (220) at the bottom of the opening and the source region (232) near the top of the opening
摘要翻译：具有较低导通状态漏极至源极电阻和较高击穿电压的DMOS晶体管（200）利用位于开口（214）的侧壁（218）处的倾斜超连接漂移结构（222），其中漏极区域（220）和位于开口顶部附近的源极区域（232）

8. 发明申请

WO2012149184A3 DMOS TRANSISTOR WITH CAVITY BELOW DRIFT REGION 审中-公开
标题翻译：具有下面DRIFT区域的DMOS晶体管
公开(公告)号：WO2012149184A3
公开(公告)日：2013-01-10
申请号：PCT/US2012035249
申请日：2012-04-26
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , FRENCH WILLIAM , VASHCHENKO VLADISLAV , FOOTE RICHARD WENDELL , SADOVNIKOV ALEXEI , BHOLA PUNIT , HOPPER PETER J
发明人： FRENCH WILLIAM , VASHCHENKO VLADISLAV , FOOTE RICHARD WENDELL , SADOVNIKOV ALEXEI , BHOLA PUNIT , HOPPER PETER J
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7824 , H01L21/26586 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/66689 , H01L29/7835 , H01L29/78603
摘要： A lateral DMOS transistor (300) formed on a silicon-on-insulator (SOI) structure (102) has a higher breakdown voltage that results from a cavity (310) that is formed in the bulk region (104) of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer (106) of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.
摘要翻译：形成在绝缘体上硅（SOI）结构（102）上的横向DMOS晶体管（300）具有由在SOI结构的体区（104）中形成的腔（310）产生的更高的击穿电压。空腔暴露SOI结构的绝缘体层（106）的底部表面的一部分，其直接位于DMOS晶体管的漂移区域的垂直下方。

9. 发明申请

WO2011139397A3 METHOD OF PROVIDING GALVANIC ISOLATION 审中-公开
标题翻译：提供电晕隔离的方法
公开(公告)号：WO2011139397A3
公开(公告)日：2011-12-29
申请号：PCT/US2011026474
申请日：2011-02-28
申请人： NAT SEMICONDUCTOR CORP
发明人： HOPPER PETER J , FRENCH WILLIAM
IPC分类号： H01L27/12
CPC分类号： H01L21/2007
摘要： A method of forming a semiconductor wafer with galvanic isolation attaches a non-conductive wafer (120) to a silicon wafer (110) to form a hybrid wafer (130). After a number of hybrid wafers (130) have been formed, the hybrid wafers (130) are simultaneously wet etched to thin the non-conductive wafer (120) of each hybrid wafer (130). Following this, a number of high-voltage devices (136) are formed on the thinned non-conductive wafer (120) of each hybrid wafer (130). Once the high- voltage devices (136) have formed, the silicon wafer (110) of each hybrid wafer (130) is thinned or removed so that the hybrid wafer (130) is suitable for packaging.
摘要翻译：通过电流隔离形成半导体晶片的方法将非导电晶片（120）附着到硅晶片（110）以形成混合晶片（130）。在形成多个混合晶片（130）之后，同时湿法蚀刻混合晶片（130）以稀释每个混合晶片（130）的非导电晶片（120）。此后，在每个混合晶片（130）的减薄的不导电晶片（120）上形成多个高压器件（136）。一旦已经形成高压器件（136），每个混合晶片（130）的硅晶片（110）被减薄或去除，使得混合晶片（130）适于包装。

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