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1. 发明申请

WO2008042295A1 CARRIER FOR REDUCING ENTRANCE AND/OR EXIT MARKS LEFT BY A SUBSTRATE-PROCESSING MENISCUS 审中-公开
标题翻译：承运人减少进口和/或退出标记由基板处理的菜单
公开(公告)号：WO2008042295A1
公开(公告)日：2008-04-10
申请号：PCT/US2007/021003
申请日：2007-09-27
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert , LENZ, Eric , WILCOXSON, Mark , RAVKIN, Mike , YATSKAR, Alexander, A.
发明人： O'DONNELL, Robert , LENZ, Eric , WILCOXSON, Mark , RAVKIN, Mike , YATSKAR, Alexander, A.
IPC分类号： H01L21/304
CPC分类号： H01L21/67051 , H01L21/6708 , Y10S134/902 , Y10S269/90 , Y10S269/902 , Y10T29/49826
摘要： A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.
摘要翻译：描述了在由上下接近头形成的弯液面的处理期间支撑基板的载体。载体包括具有开口尺寸的接收基板的框架和用于将基板支撑在开口内的多个支撑销。开口略大于基板，使得基板和开口之间存在间隙。提供了用于减小基板上的入口和/或出口痕迹的尺寸和频率的手段，该装置帮助和鼓励来自弯月面的液体以排出间隙。还提供了一种减小入口和出口标记尺寸和频率的方法。

2. 发明申请

WO2012145232A1 APPARATUS AND METHOD FOR REDUCING SUBSTRATE PATTERN COLLAPSE DURING DRYING OPERATIONS 审中-公开
标题翻译：干燥操作期间减少基板图案的装置和方法
公开(公告)号：WO2012145232A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/033402
申请日：2012-04-12
申请人： LAM RESEARCH CORPORATION , LENZ, Eric , RAVKIN, Mike , MIKHAYLICHENKO, Katrina
发明人： LENZ, Eric , RAVKIN, Mike , MIKHAYLICHENKO, Katrina
IPC分类号： B08B3/00
CPC分类号： F26B3/04 , F26B21/145 , H01L21/02057 , H01L21/67034
摘要： Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region.
摘要翻译：用于干燥基底表面的装置和方法包括：接近干燥头，其具有头部本体，头部主体包括被配置为当存在时与基底的表面相对设置的处理表面。处理表面包括第一区域，第二区域和第三区域。第一区域被限定在头部主体的前缘，并且包括凹入到头部本体中的空腔区域。空腔区域包括多个入口端口，用于将蒸汽流体引入空腔区域。当存在时，第二区域靠近衬底的表面设置并且位于第一区域旁边。当存在时，第三区域靠近基板的表面设置并位于第二区域旁边。

3. 发明申请

WO2007094984A2 SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH 审中-公开
标题翻译：密封弹性体粘结Si电极和类似于减少颗粒污染在电介质蚀刻
公开(公告)号：WO2007094984A2
公开(公告)日：2007-08-23
申请号：PCT/US2007/003008
申请日：2007-02-05
申请人： LAM RESEARCH CORPORATION , REN, Daxing , MAGNI, Enrico , LENZ, Eric , ZHOU, Ren
发明人： REN, Daxing , MAGNI, Enrico , LENZ, Eric , ZHOU, Ren
CPC分类号： H01J37/32532 , H01J37/32009 , Y10T156/10
摘要： An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
摘要翻译：一种用于半导体衬底加工的等离子体反应室的电极组件，具有具有接合面的背衬构件，具有一侧下表面的内电极和另一侧的接合面，以及外电极，一侧和另一侧的接合表面。至少一个电极具有凸缘，该凸缘在另一个电极的下表面的至少一部分的下方延伸。

4. 发明申请

WO2005111268A3 APPARATUS INCLUDING SHOWERHEAD ELECTRODE AND HEATER FOR PLASMA PROCESSING 审中-公开
公开(公告)号：WO2005111268A3
公开(公告)日：2005-11-24
申请号：PCT/US2005/012221
申请日：2005-04-11
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric
发明人： DHINDSA, Rajinder , LENZ, Eric
IPC分类号： C23F1/00
摘要： A plasma processing apparatus (100) includes a heater (700) in thermal contact with a showerhead electrode (200), and a temperature controlled top plate (800) in thermal contact with the heater (700) to maintain a desired temperature of the showerhead electrode (200) during semiconductor substrate processing. A gas distribution member (500) supplies a process gas and radio frequency (RF) power to the showerhead electrode (200).

5. 发明申请

WO2010138166A1 METHOD AND APPARATUS FOR PHYSICAL CONFINEMENT OF A LIQUID MENISCUS OVER A SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于液晶显示器半导体波形的物理配置的方法和装置
公开(公告)号：WO2010138166A1
公开(公告)日：2010-12-02
申请号：PCT/US2010/001495
申请日：2010-05-18
申请人： LAM RESEARCH CORPORATION , MAGNI, Enrico , LENZ, Eric
发明人： MAGNI, Enrico , LENZ, Eric
IPC分类号： B08B3/00 , H01L21/00
CPC分类号： B23P17/04 , B08B3/08 , H01L21/67017 , H01L21/67051 , Y10T29/494
摘要： Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a first and a second chemical head that are disposed to cover at least a portion of a top and an underside surface of the semiconductor wafer. Each of the first and the second chemical heads include an angled inlet conduit at a leading edge of the respective chemical heads to deliver liquid chemistry into a pocket of meniscus in a single phase. The pocket of meniscus is defined over the portion of the top and underside surface of the semiconductor wafer covered by the chemical heads and is configured to receive and contain the liquid chemistry applied to the surface of the semiconductor wafer as a meniscus. A step is formed at a leading edge of the first and second chemical heads along an outer periphery of the pocket of meniscus to substantially confine the meniscus of the liquid chemistry within the pocket of meniscus. The step covers at least a portion of the pocket of meniscus and the step's height is sufficient to preserve confinement characteristic of the meniscus. An inner return conduit is defined within the pocket of meniscus at a trailing edge of the respective chemical heads and is used to remove the liquid chemistry from the surface of the semiconductor wafer in a single phase after the cleaning process.
摘要翻译：用于物理限制施加在半导体晶片上的液体介质的装置，方法和系统包括设置成覆盖半导体晶片的顶表面和下表面的至少一部分的第一和第二化学头。第一和第二化学头中的每一个包括在各化学头的前缘处的成角度的入口导管，以将液体化学物质输送到单相中的弯液面袋中。半月板的凹槽被限定在由化学头覆盖的半导体晶片的顶表面和下表面的部分上，并且被配置为接收并容纳施加到半导体晶片的表面的液体化学物质作为弯液面。在第一和第二化学头的前缘沿着弯液面的凹槽的外周形成台阶，以将液体化学物质的弯液面基本上限制在弯液面的凹槽中。该步骤覆盖半月板袋的至少一部分，台阶的高度足以保持弯液面的限制特性。内部返回导管限定在各个化学头的后缘处的弯液面的凹穴内，并且用于在清洁过程之后以单相从半导体晶片的表面去除液体化学物质。

6. 发明申请

WO2005111267A3 GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RF POWER FOR PLASMA PROCESSING 审中-公开
公开(公告)号：WO2005111267A3
公开(公告)日：2005-11-24
申请号：PCT/US2005/012210
申请日：2005-04-11
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric
发明人： DHINDSA, Rajinder , LENZ, Eric
IPC分类号： C23C16/00 , C23F1/00 , H01L21/30
摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

7. 发明申请

WO2003015133A3 SHOWERHEAD ELECTRODE DESIGN FOR SEMICONDUCTOR PROCESSING REACTOR 审中-公开
公开(公告)号：WO2003015133A3
公开(公告)日：2003-02-20
申请号：PCT/US2002/024057
申请日：2002-07-31
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric
发明人： DHINDSA, Rajinder , LENZ, Eric
IPC分类号： H01J37/32
摘要： An electrode assembly of a semiconductor processing chamber wherein heat transfer between a backing plate and a showerhead electrode is improved by an electrostatic clamping arrangement, which includes a compliant material in contact with a surface of the showerhead electrode. The showerhead electrode is removably attached to the backing plate by a mechanical clamping arrangement which engages an outer periphery of the showerhead electrode. The electrostatic clamping arrangement is coextensive with the showerhead electrode to improve thermal conduction between the backing plate and the showerhead electrode.

8. 发明申请

WO2008008259A3 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
公开(公告)号：WO2008008259A3
公开(公告)日：2008-01-17
申请号：PCT/US2007/015509
申请日：2007-07-06
申请人： LAM RESEARCH CORPORATION , KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
发明人： KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
IPC分类号： C23C16/00
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

9. 发明申请

WO2007040958A3 ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME 审中-公开
公开(公告)号：WO2007040958A3
公开(公告)日：2007-04-12
申请号：PCT/US2006/036110
申请日：2006-09-15
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
发明人： DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
IPC分类号： H01H23/00
摘要： An electrostatic chuck assembly (100) having a dielectric material (108) and/or having a cavity (106) with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support (102) and an electrostatic chuck ceramic layer (104). A dielectric layer (108) or insert is located between the conductive support (102) and an electrostatic chuck ceramic layer.

10. 发明申请

WO2005112093A2 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/013582
申请日：2005-04-22
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
发明人： HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

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