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1. 发明申请

WO2013078098A1 MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM 审中-公开
标题翻译：多区域注气上电极系统
公开(公告)号：WO2013078098A1
公开(公告)日：2013-05-30
申请号：PCT/US2012/065684
申请日：2012-11-16
申请人： LAM RESEARCH CORPORATION , BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
发明人： BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/32495 , H01J37/32541
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译：等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。

2. 发明申请

WO2013078097A1 DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 审中-公开
标题翻译：上电极双区温度控制
公开(公告)号：WO2013078097A1
公开(公告)日：2013-05-30
申请号：PCT/US2012/065677
申请日：2012-11-16
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , BISE, Ryan , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D. , KELLOGG, Mike , DE LA LIERA, Anthony
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , BISE, Ryan , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D. , KELLOGG, Mike , DE LA LIERA, Anthony
IPC分类号： C23F1/08
CPC分类号： H01J37/32532
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber. Figure 1A is side view a typical plasma chamber 100. The typical plasma chamber 100 has a single showerhead type upper electrode 102, a substrate support 140 for supporting a substrate 130 as the substrate is being processed by a plasma 150.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。图1A是典型的等离子体室100的侧视图。典型的等离子体室100具有单个喷头型上电极102，用于在衬底正被等离子体150处理时支撑衬底130的衬底支撑件140。

3. 发明申请

WO2013012591A1 NEGATIVE ION CONTROL FOR DIELECTRIC ETCH 审中-公开
标题翻译：用于电介质蚀刻的负离子控制
公开(公告)号：WO2013012591A1
公开(公告)日：2013-01-24
申请号：PCT/US2012/045974
申请日：2012-07-09
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , ABATCHEV, Mirzafer, K. , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, Andrew, D.
发明人： MARAKHTANOV, Alexei , ABATCHEV, Mirzafer, K. , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, Andrew, D.
IPC分类号： H05H1/46
CPC分类号： H01L21/67069 , C23C14/345 , C23C16/505 , H01J37/32091 , H01J37/32137 , H01J2237/334 , H01J2237/3343 , H01J2237/3348 , H01L21/3065 , H01L21/31116 , H01L22/20 , H05H2001/4675
摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.
摘要翻译：提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。另外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的恒定值，导致增加到晶片表面的负离子通量。

4. 发明申请

WO2010117969A2 MODULATED MULTI-FREQUENCY PROCESSING METHOD 审中-公开
标题翻译：调制多频处理方法
公开(公告)号：WO2010117969A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030019
申请日：2010-04-06
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , HUDSON, Eric , DHINDSA, Rajinder , BAILEY, Andrew
发明人： MARAKHTANOV, Alexei , HUDSON, Eric , DHINDSA, Rajinder , BAILEY, Andrew
IPC分类号： H01L21/3065 , H05H1/24 , H05H1/36
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

5. 发明申请

WO2013070472A2 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A2
公开(公告)日：2013-05-16
申请号：PCT/US2012/062867
申请日：2012-10-31
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY III, Andrew, D.
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

6. 发明申请

WO2013036371A3 PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 审中-公开
公开(公告)号：WO2013036371A3
公开(公告)日：2013-03-14
申请号：PCT/US2012/051460
申请日：2012-08-17
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, III, Andrew, D.
发明人： MARAKHTANOV, Alexei , DHINDSA, Rajinder , HUDSON, Eric , BAILEY, III, Andrew, D.
IPC分类号： G01R31/00
摘要： Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber.

7. 发明申请

WO2008121655A1 METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE 审中-公开
标题翻译： RF电源直流电压控制方法与装置
公开(公告)号：WO2008121655A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/058316
申请日：2008-03-26
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas , MORAVEJ, Maryam
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas , MORAVEJ, Maryam
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01L21/205
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源，以及负直流电源通过RF滤波器控制等离子体处理参数。

8. 发明申请

WO2008121654A1 METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE 审中-公开
标题翻译：用于诱导直流电压在电极上的方法和装置
公开(公告)号：WO2008121654A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/058314
申请日：2008-03-26
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： H01L21/3065
CPC分类号： H01J37/32183 , H01J37/32091
摘要： A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode.
摘要翻译：公开了一种处理衬底的方法。该方法包括在配置有第一电极和第二电极的等离子体处理室中支撑衬底。该方法还包括将无源射频（RF）电路耦合到第二电极，被动RF电路被配置为调节第二电极上的RF阻抗，RF电压电位和DC偏置电位中的一个或多个。

9. 发明申请

WO2008082921A1 PLASMA-ENHANCED SUBSTRATE PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体增强基板加工方法和装置
公开(公告)号：WO2008082921A1
公开(公告)日：2008-07-10
申请号：PCT/US2007/087670
申请日：2007-12-14
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
发明人： DHINDSA, Rajinder , HUDSON, Eric , MARAKHTANOV, Alexei , FISCHER, Andreas
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.
摘要翻译：一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。在等离子体处理期间，衬底设置在下电极上。该方法包括向下电极提供至少具有第一RF频率的第一RF信号。第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。该方法还包括向上电极提供第二RF信号。第二RF信号也具有第一RF频率。第二RF信号的相位偏离第一RF信号的相位小于10％的值。该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

10. 发明申请

WO2009043001A1 METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：混合电容耦合和电感耦合等离子体处理系统的方法和装置
公开(公告)号：WO2009043001A1
公开(公告)日：2009-04-02
申请号：PCT/US2008/078115
申请日：2008-09-29
申请人： LAM RESEARCH CORPORATION , MARAKHTANOV, Alexei , BENJAMIN, Neil , HUDSON, Eric , DHINDSA, Rajinder
发明人： MARAKHTANOV, Alexei , BENJAMIN, Neil , HUDSON, Eric , DHINDSA, Rajinder
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32532 , H01J37/3266 , H01J37/32669 , H01J2237/332 , H01J2237/334
摘要： A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
摘要翻译：提供具有用于处理衬底的等离子体处理室的电容耦合等离子体（CCP）处理系统。电容耦合等离子体（CCP）处理系统包括用于处理衬底的上电极和下电极，其在等离子体处理期间设置在下电极上。电容耦合等离子体（CCP）处理系统还包括电感线圈布置阵列，其被配置为在上电极和下电极之间的间隙中感应维持等离子体。

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