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1. 发明申请

WO2011022612A3 INDUCTIVE PLASMA SOURCE 审中-公开
标题翻译：诱导等离子体源
公开(公告)号：WO2011022612A3
公开(公告)日：2011-05-26
申请号：PCT/US2010046110
申请日：2010-08-20
申请人： MATTSON TECH INC , GODYAK VALERY A , CRAPUCHETTES CHARLES , NAGORNY VLADIMIR
发明人： GODYAK VALERY A , CRAPUCHETTES CHARLES , NAGORNY VLADIMIR
IPC分类号： H05H1/34 , H05H1/40
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32137 , H01J37/32174 , H01J37/32183 , H01J37/32449 , H01J37/32651 , H05H1/46 , H05H2001/4652
摘要： Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.
摘要翻译：公开了提供高效和可缩放RF电感等离子体处理的方法和设备。在一些方面，感应式RF能量施加器与等离子之间的耦合和/或来自施加器的功率传输的空间定义大大增强。所公开的方法和装置由此实现高电效率，降低寄生电容耦合和/或增强处理均匀性。各种实施例包括等离子体处理设备，该等离子体处理设备具有由壁界定的处理腔室，设置在处理腔室中的衬底保持器以及腔室的壁外部的感应RF能量施加器。感应式RF能量施加器包括一个或多个射频感应耦合元件（ICE）。每个电感耦合元件都有一个靠近涂敷器壁上的薄介电窗的聚磁器。

2. 发明申请

WO2010115816A1 PROZESSKAMMER MIT MODULIERTER PLASMAVERSORGUNG 审中-公开
标题翻译：用调制等离子电源工艺室
公开(公告)号：WO2010115816A1
公开(公告)日：2010-10-14
申请号：PCT/EP2010/054340
申请日：2010-03-31
申请人： Forschungsverbund Berlin e. V. , GESCHE, Roland
发明人： GESCHE, Roland
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32137
摘要： Eine Plasmakammer (10, 20, 30) mit einer an einer ersten Seite befestigten ersten Aufnahmevorrichtung für ein Substrat (14, 24, 34) und mit einer Plasmaerzeugungseinheit für das Erzeugen eines Plasmas in der Plasmakammer, wobei die Plasmaerzeugungseinheit mit einer Hochfrequenzspannungsversorgung (11, 21, 31) verbunden oder verbindbar ist. Die Hochfrequenzspannungsversorgung ist ausgebildet, eine modulierte hochfrequente Wechselspannung zu erzeugen und an die Plasmaerzeugungseinheit auszugeben. Die Plasmaerzeugungseinheit ist ausgebildet, das Plasma mit der modulierten hochfrequenten Wechselspannung zu erzeugen.
摘要翻译：一种等离子体腔室（10，20，30）具有固定到所述第一接收装置的第一侧用于在基板（14，24，34）和具有用于在等离子体室中产生等离子体的等离子体产生单元，所述等离子体生成单元与高频电源（11，连接21，31）或可连接。高频电源被配置以产生调制的高频交流电压，并输出到等离子体产生单元。等离子体产生单元被配置为生成与所述调制的高频交流电压的等离子体。

3. 发明申请

WO2010088348A2 METHODS FOR FORMING CONFORMAL OXIDE LAYERS ON SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件上形成一致的氧化层的方法
公开(公告)号：WO2010088348A2
公开(公告)日：2010-08-05
申请号：PCT/US2010/022353
申请日：2010-01-28
申请人： APPLIED MATERIALS, INC. , TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
发明人： TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电卡盘和冷却液和气体对流。

4. 发明申请

WO2004102638A2 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A2
公开(公告)日：2004-11-25
申请号：PCT/US2004/013707
申请日：2004-04-29
申请人： LAM RESEARCH CORPORATION , LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
发明人： LOEWENHARDT, Peter , SRINIVASAN, Mukund , FISCHER, Andreas
IPC分类号： H01L21/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided. A capacitively coupled process chamber is provided. A gas source is provided. A first and a second electrode are provided within the process chamber. A first radio frequency power source is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source is electrically connected to at least one of the first and second electrodes. A first modulation control is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的设备。提供了一种电容耦合处理室。提供气源。第一和第二电极设置在处理室内。第一射频电源电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源电连接到第一和第二电极中的至少一个。第一调制控制连接到第一射频电源，以提供对第一射频电源的受控调制。

5. 发明申请

WO2002078043A2 BEAM PROCESSING APPARATUS 审中-公开
标题翻译：光束加工设备
公开(公告)号：WO2002078043A2
公开(公告)日：2002-10-03
申请号：PCT/JP2002/002749
申请日：2002-03-22
申请人： EBARA CORPORATION , ICHIKI, Katsunori , YAMAUCHI, Kazuo , HIYAMA, Hirokuni , SAMUKAWA, Seiji
发明人： ICHIKI, Katsunori , YAMAUCHI, Kazuo , HIYAMA, Hirokuni , SAMUKAWA, Seiji
IPC分类号： H01J37/08
CPC分类号： H01J37/32137 , H01J37/08 , H01J37/30 , H01J37/32357 , H01J2237/0827
摘要： A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the fist electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.
摘要翻译：光束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在真空室（3）中的第一电极（4）设置在真空室（3）中的第一电极（4）的上游的第二电极（5）。光束处理装置还包括用于在第一电极（4）和第二电极（5）之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子（6）和负离子的电压施加单元。

6. 发明申请

WO2018132149A1 CATHODE WITH IMPROVED RF POWER EFFICIENCY FOR SEMICONDUCTOR PROCESSING EQUIPMENT WITH RF PLASMA 审中-公开
公开(公告)号：WO2018132149A1
公开(公告)日：2018-07-19
申请号：PCT/US2017/058975
申请日：2017-10-30
申请人： LAM RESEARCH CORPORATION
发明人： LONG, Maolin
IPC分类号： H01J37/32
CPC分类号： H01J37/32559 , H01J37/3211 , H01J37/32137 , H01J37/32541 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01J2237/334
摘要： A cathode assembly for use in a plasma processing chamber is provided. A metal bowl that is grounded is provided. An insulator of a sealed porous or sealed honeycomb dielectric ceramic with an equivalent dielectric constant k

7. 发明申请

WO2011156534A2 MULTIPLE FREQUENCY POWER FOR PLASMA CHAMBER ELECTRODE 审中-公开
标题翻译：用于等离子体室电极的多个频率功率
公开(公告)号：WO2011156534A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039689
申请日：2011-06-08
申请人： APPLIED MATERIALS, INC.
发明人： HAMMOND, Edward, P., IV , TANAKA, Tsutomu , BOITNOTT, Christopher , KUDELA, Jozef
IPC分类号： H05H1/46 , H05H1/34 , H01L21/205
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32137
摘要： First through fifth RF power signals are respectively coupled to first through fifth RF connection points on an electrode of a plasma chamber. The first, second and third RF power signals have distinct first, second and third frequencies, respectively. The second and fourth RF power signals have the same frequency and opposite phase. The third and fifth RF power signals have the same frequency and opposite phase. The second through fifth RF connection points are geometrically arranged as four successive vertices of a quadrilateral convex polygon. The first RF connection point is closer to the center of the electrode. The center strong spatial distribution of the electric field produced by the first RF power signal is offset by the center weak spatial distribution of the electric field produced by the second through fifth RF power signals. An alternative embodiment omits the third and fifth RF power signals and the third and fifth RF connection points.
摘要翻译：第一至第五RF功率信号分别耦合到等离子体室的电极上的第一至第五RF连接点。第一，第二和第三RF功率信号分别具有不同的第一，第二和第三频率。第二和第四RF功率信号具有相同的频率和相位相位。第三和第五RF功率信号具有相同的频率和相位相位。第二至第五RF连接点在几何上被布置为四边形凸多边形的四个连续顶点。第一RF连接点更靠近电极的中心。由第一RF功率信号产生的电场的中心强空间分布由第二至第五RF功率信号产生的电场的中心弱空间分布抵消。替代实施例省略了第三和第五RF功率信号以及第三和第五RF连接点。

8. 发明申请

WO2010144555A2 ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：WO2010144555A2
公开(公告)日：2010-12-16
申请号：PCT/US2010037942
申请日：2010-06-09
申请人： LAM RES CORP , LONG MAOLIN , JAFARIAN-TEHRANI SEYED JAFAR
发明人： LONG MAOLIN , JAFARIAN-TEHRANI SEYED JAFAR
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

9. 发明申请

WO2008024392A3 INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY 审中-公开
标题翻译：具有高耦合效率的电感等离子体源
公开(公告)号：WO2008024392A3
公开(公告)日：2008-12-04
申请号：PCT/US2007018557
申请日：2007-08-22
申请人： GODYAK VALERY
发明人： GODYAK VALERY
IPC分类号： H05H1/24 , C23C16/00 , C23F1/00
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32449 , H01J37/3266 , H05H1/46
摘要： A method and apparatus are provided for processing a substrate with a radio frequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.
摘要翻译：提供了一种在制造装置中处理具有射频感应等离子体的基板的方法和装置。用具有一个或多个电感耦合元件的感应等离子体施加器来维持感应等离子体。电感耦合元件和处理室内部之间有薄窗。各种实施例在感应耦合元件中具有磁通量聚集器和散布在感应耦合元件之间的馈送气体孔。薄窗，磁通集中器和散布的进料气孔可用于实现均匀加工，高功率转移效率和施加器与等离子体之间的高度耦合度。在一些实施例中，使用平衡电压来抑制电容电流以为感应耦合元件供电。

10. 发明申请

WO2007056190A2 METHOD AND APPARATUS OF PROVIDING POWER TO IGNITE AND SUSTAIN A PLASMA IN A REACTIVE GAS GENERATOR 审中-公开
标题翻译：向IGNITE提供电力的方法和装置，并在可靠的气体发生器中保持等离子体
公开(公告)号：WO2007056190A2
公开(公告)日：2007-05-18
申请号：PCT/US2006043046
申请日：2006-11-03
申请人： MKS INSTR INC , MILLNER ALAN , ALEXANDER THOMAS , BYSTRYAK ILYA , TRAN KEN , JOSHI MADHUWANTI
发明人： MILLNER ALAN , ALEXANDER THOMAS , BYSTRYAK ILYA , TRAN KEN , JOSHI MADHUWANTI
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/32137 , H05H1/46
摘要： According to a first aspect, a power supply and a method of providing power for igniting a plasma in a reactive gas generator is provided that includes (i) coupling a series resonant circuit that comprises a resonant inductor and a resonant capacitor between a switching power source and a transformer, the transformer having a transformer primary and a plasma secondary; (ii) providing a substantially resonant AC voltage from the resonant capacitor across the transformer primary, thereby inducing a substantially resonant current within the transformer primary to generate the plasma secondary; and (iii) upon generation of the plasma secondary, the resonant inductor limiting current flowing to the switching power supply. According to another aspect, bipolar high voltage ignition electrodes can be used in conjunction with inductive energy coupling to aid in plasma ignition.
摘要翻译：根据第一方面，提供了一种电源和提供用于点燃无功气体发生器中的等离子体的功率的方法，其包括（i）将包括谐振电感器的串联谐振电路和谐振电容器耦合在开关电源和变压器，变压器具有变压器初级和等离子体次级; （ii）从变压器初级侧的谐振电容器提供基本上谐振的AC电压，从而在变压器初级线路内引起基本上谐振的电流以产生等离子体次级; 和（iii）在产生等离子体次级时，谐振电感器限制流向开关电源的电流。根据另一方面，双极性高压点火电极可以与感应能耦合一起使用以辅助等离子体点火。

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