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1. 发明申请

WO2006065630A3 REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少蚀刻特征的关键尺寸
公开(公告)号：WO2006065630A3
公开(公告)日：2007-04-12
申请号：PCT/US2005044505
申请日：2005-12-06
申请人： LAM RES CORP , HUANG ZHISONG , SADJADI S M REZA , MARKS JEFFREY
发明人： HUANG ZHISONG , SADJADI S M REZA , MARKS JEFFREY
IPC分类号： H01L21/311 , H01L21/00 , H01L21/308
CPC分类号： H01L21/67069 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.
摘要翻译：一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

2. 发明申请

WO2006096528A2 STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
标题翻译：用于蚀刻过程的稳定的光电子结构
公开(公告)号：WO2006096528A2
公开(公告)日：2006-09-14
申请号：PCT/US2006007643
申请日：2006-03-02
申请人： LAM RES CORP , SADJADI S M REZA , HUDSON ERIC A , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG
发明人： SADJADI S M REZA , HUDSON ERIC A , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG
IPC分类号： H01L21/027 , G03F7/40
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。去除掩模和侧壁层。

3. 发明申请

WO2007041423A1 VERTICAL PROFILE FIXING 审中-公开
标题翻译：垂直轮廓固定
公开(公告)号：WO2007041423A1
公开(公告)日：2007-04-12
申请号：PCT/US2006038299
申请日：2006-09-29
申请人： LAM RES CORP , SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
发明人： SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
IPC分类号： H01L21/311 , G03F7/40 , H01L21/027
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译：提供了一种用于蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除面具。

4. 发明申请

WO2006130319A3 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 审中-公开
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：WO2006130319A3
公开(公告)日：2009-04-16
申请号：PCT/US2006018142
申请日：2006-05-10
申请人： LAM RES CORP , LEE SANGHEON , CHOI DAE-HAN , KIM JISOO , CIRIGLIANO PETER , HUANG ZHISONG , CHARATAN ROBERT , SADJADI S M REZA
发明人： LEE SANGHEON , CHOI DAE-HAN , KIM JISOO , CIRIGLIANO PETER , HUANG ZHISONG , CHARATAN ROBERT , SADJADI S M REZA
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature (324) in an etch layer (308, 310) is provided. A photoresist layer (312) is formed over the etch layer (308, 310). The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer (318) is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer (320) is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions (324) of the photoresist features. Openings in the control layer (318) are opened with a control layer breakthrough chemistry. Fedures are etched into the etch layer (308, 310) with an etch chemistry, which is different from the control layer (318) break through chemistry, wherein the control layer (318) is more etch resistant to the etch with the etch chemistry than the conformal layer (320).
摘要翻译：提供了一种在蚀刻层（308,310）中形成特征（324）的方法。在蚀刻层（308,310）上形成光致抗蚀剂层（312）。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层（318）。在光致抗蚀剂特征和控制层的侧壁上沉积共形层（320），以减小光刻胶特征的临界尺寸（324）。控制层（318）中的开口以控制层突破性化学物质打开。用蚀刻化学物质将蚀刻蚀刻到蚀刻层（308,310）中，蚀刻化学物质不同于控制层（318）突破化学，其中控制层（318）对蚀刻化学腐蚀更耐腐蚀，共形层（320）。

5. 发明申请

WO2009062123A2 PITCH REDUCTION USING OXIDE SPACER 审中-公开
标题翻译：使用氧化物间隔物减少PITCH
公开(公告)号：WO2009062123A2
公开(公告)日：2009-05-14
申请号：PCT/US2008082915
申请日：2008-11-07
申请人： LAM RES CORP , KIM JISOO , CHIANG CONAN , SHINAGAWA JUN , SADJADI S M REZA
发明人： KIM JISOO , CHIANG CONAN , SHINAGAWA JUN , SADJADI S M REZA
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/0337 , H01L21/0338 , H01L21/31612 , H01L21/31654 , H01L21/32139
摘要： A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.
摘要翻译：提供了一种用于蚀刻设置在基板上方并且在抗反射涂层（ARC）层下方的蚀刻层和具有掩模特征的图案化有机掩模的方法。将基板放置在处理室中。 ARC层打开。形成氧化物间隔物沉积层。部分去除有机掩模上的氧化物间隔物沉积层，其中氧化物间隔物沉积层的至少顶部被去除。通过蚀刻去除有机掩模和ARC层。通过氧化物隔离层沉积层的侧壁蚀刻蚀刻层。将衬底从处理室中取出。

6. 发明申请

WO2010080655A3 SPACER FORMATION FOR ARRAY DOUBLE PATTERNING 审中-公开
标题翻译：阵列双重图案的间隔物形成
公开(公告)号：WO2010080655A3
公开(公告)日：2010-09-23
申请号：PCT/US2009069292
申请日：2009-12-22
申请人： LAM RES CORP , SADJADI S M REZA , JAIN AMIT
发明人： SADJADI S M REZA , JAIN AMIT
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organic mask is trimmed. An inorganic layer is deposited over the patterned organic mask where a thickness of the inorganic layer over the covered periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask. The inorganic layer is etched back to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed. The organic mask exposed in the array area is stripped, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area.
摘要翻译：一种用于形成具有周围外围区域的阵列区域的方法，其中衬底设置在蚀刻层下方，所述蚀刻层布置在限定阵列区域的图案化有机掩模下方并且覆盖整个外围区域。图案化的有机面膜被修剪。将无机层沉积在图案化的有机掩模上，其中有机掩模的被覆盖的外围区域上的无机层的厚度大于有机掩模的阵列区域上的无机层的厚度。回蚀无机层以暴露有机掩模并在阵列区域中形成无机间隔物，同时使周围区域中的有机掩模未暴露。暴露在阵列区域中的有机掩模被剥离，同时留下无机间隔物并保护外围区域中的有机掩模。

7. 发明申请

WO2009085694A4 PROTECTIVE LAYER FOR IMPLANT PHOTORESIST 审中-公开
标题翻译：植入光敏剂保护层
公开(公告)号：WO2009085694A4
公开(公告)日：2009-10-29
申请号：PCT/US2008086825
申请日：2008-12-15
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI S M REZA
发明人： ROMANO ANDREW R , SADJADI S M REZA
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译：提供了一种用于将掺杂剂注入到衬底中的方法。图案化的光刻胶掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。通过执行循环沉积，在构图的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积阶段和用于提供垂直侧壁的轮廓成形阶段。使用离子束将掺杂剂注入到衬底中。保护层和光刻胶掩模被移除。

8. 发明申请

WO2007021540A3 ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
标题翻译：具有减少线路边缘粗糙度的蚀刻特征
公开(公告)号：WO2007021540A3
公开(公告)日：2007-12-21
申请号：PCT/US2006030028
申请日：2006-08-01
申请人： LAM RES CORP , SADJADI S M REZA , HUDSON ERIC A
发明人： SADJADI S M REZA , HUDSON ERIC A
IPC分类号： G03F7/40 , H01L21/027 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/31144
摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.
摘要翻译：提供了一种用于在具有减少的线边缘粗糙化的层中形成特征的方法。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以与光致抗蚀剂侧壁形成光致抗蚀剂特征。通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。每个循环包括在光致抗蚀剂层上沉积层，其中沉积层的厚度在单层至20nm之间。通过光刻胶特征将特征蚀刻到该层中。光刻胶层和侧壁层被剥离。

9. 发明申请

WO2006135924A9 IMPROVEMENT OF ETCH RATE UNIFORMITY USING THE INDEPENDENT MOVEMENT OF ELECTRODE PIECES 审中-公开
标题翻译：使用电极片独立运动改进电压均匀性
公开(公告)号：WO2006135924A9
公开(公告)日：2007-02-22
申请号：PCT/US2006023114
申请日：2006-06-12
申请人： LAM RES CORP , KIM JISOO , CHOI DAE-HAN , SADJADI S M REZA
发明人： KIM JISOO , CHOI DAE-HAN , SADJADI S M REZA
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32623
摘要： A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a bottom grounded extension adjacent to and substantially encircling the bottom electrode. The top grounded extension adjacent to and substantially parallel to the top electrode. The top electrode is also grounded. The top grounded extension is capable of being independently raised or lowered to extend into a region above the bottom grounded extension.
摘要翻译：等离子体反应器包括腔室，底部电极，顶部电极，与底部电极相邻并且基本上环绕底部电极的底部接地延伸部。邻近并基本平行于顶部电极的顶部接地延伸部分。顶部电极也接地。顶部接地延伸部能够独立地升高或降低以延伸到底部接地延伸部上方的区域中。

10. 发明申请

WO2006104655A2 ETCH WITH PHOTORESIST MASK 审中-公开
标题翻译： ETCH与摄影师面具
公开(公告)号：WO2006104655A2
公开(公告)日：2006-10-05
申请号：PCT/US2006008306
申请日：2006-03-07
申请人： LAM RES CORP , KIM JISOO , LEE SANGHEON , WORSHAM BINET A , CHARATAN ROBERT , SADJADI S M REZA
发明人： KIM JISOO , LEE SANGHEON , WORSHAM BINET A , CHARATAN ROBERT , SADJADI S M REZA
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF 3 is provided into the plasma chamber. A plasma is formed from the NF 3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF 3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

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