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1. 发明申请

WO2009085694A4 PROTECTIVE LAYER FOR IMPLANT PHOTORESIST 审中-公开
标题翻译：植入光敏剂保护层
公开(公告)号：WO2009085694A4
公开(公告)日：2009-10-29
申请号：PCT/US2008086825
申请日：2008-12-15
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI S M REZA
发明人： ROMANO ANDREW R , SADJADI S M REZA
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译：提供了一种用于将掺杂剂注入到衬底中的方法。图案化的光刻胶掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。通过执行循环沉积，在构图的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积阶段和用于提供垂直侧壁的轮廓成形阶段。使用离子束将掺杂剂注入到衬底中。保护层和光刻胶掩模被移除。

2. 发明申请

WO2009099769A3 DOUBLE MASK SELF-ALIGNED DOUBLE PATTERNING TECHNOLOGY (SADPT) PROCESS 审中-公开
标题翻译：双面掩模自对准双模式技术（SADPT）工艺
公开(公告)号：WO2009099769A3
公开(公告)日：2009-10-15
申请号：PCT/US2009031713
申请日：2009-01-22
申请人： LAM RES CORP , SADJADI S M REZA , LI LUMIN , ROMANO ANDREW R
发明人： SADJADI S M REZA , LI LUMIN , ROMANO ANDREW R
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
摘要翻译：通过在无机掩模层上形成有机掩模层，在有机掩模层上形成含硅掩模层，在含硅掩模层上形成图案化掩模层，蚀刻，提供蚀刻层中提供特征的方法通过图案化掩模的含硅掩模层，在蚀刻的含硅掩模层上沉积聚合物，在聚合物上沉积含硅膜，平坦化含硅膜，选择性地除去离开含硅膜的聚合物蚀刻有机层，并蚀刻无机层。

3. 发明申请

WO2009085694A3 PROTECTIVE LAYER FOR IMPLANT PHOTORESIST 审中-公开
标题翻译：植物保护层保护层
公开(公告)号：WO2009085694A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086825
申请日：2008-12-15
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI S M REZA
发明人： ROMANO ANDREW R , SADJADI S M REZA
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/266 , G03F7/40 , H01L21/0273 , H01L21/26513
摘要： A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
摘要翻译：提供了一种用于在衬底中注入掺杂剂的方法。图案化的光致抗蚀剂掩模形成在衬底上，其中图案化的光刻胶掩模具有图案化的光刻胶掩模特征。通过执行循环沉积，在图案化的光致抗蚀剂掩模上沉积保护层，其中每个循环包括用于在光致抗蚀剂材料的图案化掩模的表面上沉积沉积层的沉积相和用于提供垂直侧壁的轮廓成形阶段。使用离子束将掺杂剂注入到衬底中。去除保护层和光刻胶掩模。

4. 发明申请

WO2009085598A3 PHOTORESIST DOUBLE PATTERNING 审中-公开
标题翻译：摄影师双重图案
公开(公告)号：WO2009085598A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086095
申请日：2008-12-09
申请人： LAM RES CORP , SADJADI S M REZA , ROMANO ANDREW R
发明人： SADJADI S M REZA , ROMANO ANDREW R
IPC分类号： H01L21/027 , H01L21/3065
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/405 , H01L21/76816
摘要： A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
摘要翻译：提供了蚀刻形成在基板上的蚀刻层的方法。在蚀刻层上提供具有第一掩模特征的第一光致抗蚀剂（PR）掩模。通过包括至少一个循环的工艺在第一PR掩模上提供保护涂层。每个循环包括（a）用于使用沉积气体在第一掩模特征的表面上沉积沉积层的沉积阶段，以及（b）用于使用轮廓成形气体成形沉积层的轮廓的轮廓成形阶段。在具有保护涂层的第一PR掩模上施加液体PR材料。 PR材料被图案化成第二掩模特征，其中第一和第二掩模特征形成第二PR掩模。通过第二PR掩模蚀刻蚀刻层。

5. 发明申请

WO2009085564A4 ETCH WITH HIGH ETCH RATE RESIST MASK 审中-公开
标题翻译：具有高耐蚀性面漆的ETCH
公开(公告)号：WO2009085564A4
公开(公告)日：2009-11-26
申请号：PCT/US2008085751
申请日：2008-12-05
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI REZA S M
发明人： ROMANO ANDREW R , SADJADI REZA S M
IPC分类号： H01L21/027 , H01L21/3065
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
摘要翻译：提供了将特征蚀刻到蚀刻层中的方法。图案化掩模形成在蚀刻层上，其中图案化掩模是高蚀刻速率光致抗蚀剂材料，其中图案化掩模具有图案化掩模特征。通过执行循环沉积，保护层沉积在高蚀刻速率光致抗蚀剂材料的图案化掩模上，其中每个循环包括沉积相，用于在暴露表面上沉积沉积层，包括高蚀刻速率光致抗蚀剂的图案化掩模的侧壁材料和用于提供垂直侧壁的轮廓成形阶段。使用保护层作为掩模将特征蚀刻到蚀刻层中。保护层被去除。

6. 发明申请

WO2009085564A3 ETCH WITH HIGH ETCH RATE RESIST MASK 审中-公开
标题翻译：用高蚀刻速率抗蚀剂掩模蚀刻
公开(公告)号：WO2009085564A3
公开(公告)日：2009-10-01
申请号：PCT/US2008085751
申请日：2008-12-05
申请人： LAM RES CORP , ROMANO ANDREW R , SADJADI REZA S M
发明人： ROMANO ANDREW R , SADJADI REZA S M
IPC分类号： H01L21/027 , H01L21/3065
CPC分类号： H01L21/31144 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method for etching features into an etch layer is provided. A patterned mask is formed over the etch layer, wherein the patterned mask is of a high etch rate photoresist material, wherein the patterned mask has patterned mask features. A protective layer is deposited on the patterned mask of high etch rate photoresist material by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including sidewalls of the patterned mask of high etch rate photoresist material and a profile shaping phase for providing vertical sidewalls. Features are etched into the etch layer using the protective layer as a mask. The protective layer is removed.
摘要翻译：提供了将特征蚀刻到蚀刻层中的方法。在蚀刻层上形成图案化掩模，其中图案化掩模是高蚀刻速率光刻胶材料，其中图案化掩模具有图案化掩模特征。通过执行循环沉积，在高蚀刻速率光致抗蚀剂材料的图案化掩模上沉积保护层，其中每个循环包括用于在暴露表面（包括高蚀刻速率光致抗蚀剂图案化掩模的侧壁）上沉积沉积层的沉积阶段材料和用于提供垂直侧壁的轮廓成形阶段。使用保护层作为掩模将特征蚀刻到蚀刻层中。保护层被移除。

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