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1. 发明申请

WO2006096528A2 STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
标题翻译：用于蚀刻过程的稳定的光电子结构
公开(公告)号：WO2006096528A2
公开(公告)日：2006-09-14
申请号：PCT/US2006007643
申请日：2006-03-02
申请人： LAM RES CORP , SADJADI S M REZA , HUDSON ERIC A , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG
发明人： SADJADI S M REZA , HUDSON ERIC A , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG
IPC分类号： H01L21/027 , G03F7/40
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成第一掩模，其中第一掩模限定具有宽度的多个空间。第一掩模被横向蚀刻，其中蚀刻的第一掩模限定宽度大于第一掩模的空间的宽度的多个空间。在蚀刻的第一掩模上形成侧壁层，其中侧壁层限定宽度小于由蚀刻的第一掩模限定的空间的宽度的多个空间。特征通过侧壁蚀刻到蚀刻层中，其中特征具有小于由蚀刻的第一掩模限定的空间的宽度的宽度。去除掩模和侧壁层。

2. 发明申请

WO2007041423A1 VERTICAL PROFILE FIXING 审中-公开
标题翻译：垂直轮廓固定
公开(公告)号：WO2007041423A1
公开(公告)日：2007-04-12
申请号：PCT/US2006038299
申请日：2006-09-29
申请人： LAM RES CORP , SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
发明人： SADJADI S M REZA , CIRIGLIANO PETER , KIM JI SOO , HUANG ZHISONG , HUDSON ERIC A
IPC分类号： H01L21/311 , G03F7/40 , H01L21/027
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译：提供了一种用于蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除面具。

3. 发明申请

WO2006130319A3 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 审中-公开
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：WO2006130319A3
公开(公告)日：2009-04-16
申请号：PCT/US2006018142
申请日：2006-05-10
申请人： LAM RES CORP , LEE SANGHEON , CHOI DAE-HAN , KIM JISOO , CIRIGLIANO PETER , HUANG ZHISONG , CHARATAN ROBERT , SADJADI S M REZA
发明人： LEE SANGHEON , CHOI DAE-HAN , KIM JISOO , CIRIGLIANO PETER , HUANG ZHISONG , CHARATAN ROBERT , SADJADI S M REZA
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature (324) in an etch layer (308, 310) is provided. A photoresist layer (312) is formed over the etch layer (308, 310). The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer (318) is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer (320) is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions (324) of the photoresist features. Openings in the control layer (318) are opened with a control layer breakthrough chemistry. Fedures are etched into the etch layer (308, 310) with an etch chemistry, which is different from the control layer (318) break through chemistry, wherein the control layer (318) is more etch resistant to the etch with the etch chemistry than the conformal layer (320).
摘要翻译：提供了一种在蚀刻层（308,310）中形成特征（324）的方法。在蚀刻层（308,310）上形成光致抗蚀剂层（312）。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层（318）。在光致抗蚀剂特征和控制层的侧壁上沉积共形层（320），以减小光刻胶特征的临界尺寸（324）。控制层（318）中的开口以控制层突破性化学物质打开。用蚀刻化学物质将蚀刻蚀刻到蚀刻层（308,310）中，蚀刻化学物质不同于控制层（318）突破化学，其中控制层（318）对蚀刻化学腐蚀更耐腐蚀，共形层（320）。

4. 发明申请

WO2006065630A3 REDUCTION OF ETCH MASK FEATURE CRITICAL DIMENSIONS 审中-公开
标题翻译：减少蚀刻特征的关键尺寸
公开(公告)号：WO2006065630A3
公开(公告)日：2007-04-12
申请号：PCT/US2005044505
申请日：2005-12-06
申请人： LAM RES CORP , HUANG ZHISONG , SADJADI S M REZA , MARKS JEFFREY
发明人： HUANG ZHISONG , SADJADI S M REZA , MARKS JEFFREY
IPC分类号： H01L21/311 , H01L21/00 , H01L21/308
CPC分类号： H01L21/67069 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method for forming features in an etch layer in an etch stack with an etch mask over the etch layer, wherein the etch mask has etch mask features with sidewalls, where the etch mask features have a first critical dimension, is provided. A cyclical critical dimension reduction is performed to form deposition layer features with a second critical dimension, which is less than the first critical dimension. Each cycle, comprises a depositing phase for depositing a deposition layer over the exposed surfaces, including the vertical sidewalls, of the etch mask features and an etching phase for etching back the deposition layer leaving a selective deposition on the vertical sidewalls. Features are etched into the etch layer, wherein the etch layer features have a third critical dimension, which is less than the first critical dimension.
摘要翻译：一种用于在蚀刻层上的蚀刻层中形成蚀刻层中的特征的方法，其中蚀刻掩模具有带侧壁的蚀刻掩模特征，其中蚀刻掩模特征具有第一临界尺寸。执行周期性临界尺寸降低以形成具有小于第一临界尺寸的第二临界尺寸的沉积层特征。每个循环包括沉积相，用于在包括垂直侧壁的蚀刻掩模特征的暴露表面上沉积沉积层，以及用于蚀刻回沉积层的蚀刻阶段，在垂直侧壁上留下选择性沉积。将特征蚀刻到蚀刻层中，其中蚀刻层特征具有小于第一临界尺寸的第三临界尺寸。

5. 发明申请

WO2004034445A2 A METHOD FOR PLASMA ETCHING PERFORMANCE ENHANCEMENT 审中-公开
标题翻译：等离子体蚀刻性能提高的方法
公开(公告)号：WO2004034445A2
公开(公告)日：2004-04-22
申请号：PCT/US0331712
申请日：2003-10-06
申请人： LAM RES CORP , HUANG ZHISONG , LI LUMIN , SADJADI REZA
发明人： HUANG ZHISONG
IPC分类号： H01L21/311 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76808 , H01L21/30655 , H01L21/31116 , H01L21/31144 , H01L21/76807 , H01L21/76831
摘要： A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.
摘要翻译：提供了通过蚀刻掩模蚀刻层中的特征的方法。在蚀刻掩模的暴露表面和具有钝化气体混合物的特征的垂直侧壁上形成保护层。通过蚀刻掩模蚀刻该特征，反应性蚀刻混合物含有至少一种蚀刻化学品和至少一种钝化化学品。

6. 发明申请

WO2005112093A3 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A3
公开(公告)日：2007-01-11
申请号：PCT/US2005013582
申请日：2005-04-22
申请人： LAM RES CORP , HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
发明人： HUANG ZHISONG , SAM JOSE TONG , LENZ ERIC , DHINDSA RAJINDER , SADJADI REZA
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于向诸如等离子体处理装置的等离子体处理室之类的室提供不同气体组成的气体分配系统。气体分配系统可以包括气体供应部，流量控制部和切换部。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括可操作以快速打开和关闭的快速切换阀，以允许第一和第二气体的快速切换，优选地，在任一种气体的流动中不会出现不期望的压力波动或流动不稳定性。

7. 发明申请

WO2004034445B1 A METHOD FOR PLASMA ETCHING PERFORMANCE ENHANCEMENT 审中-公开
公开(公告)号：WO2004034445B1
公开(公告)日：2004-09-30
申请号：PCT/US0331712
申请日：2003-10-06
申请人： LAM RES CORP , HUANG ZHISONG , LI LUMIN , SADJADI REZA
发明人： HUANG ZHISONG
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/30655 , H01L21/31116 , H01L21/31144 , H01L21/76807 , H01L21/76831
摘要： A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a passivation gas mixture. The feature is etched through the etching mask with reactive etching mixtures containing at least one etching chemical and at least one passivation chemical.

8. 发明申请

WO2005035679B1 SOUND DAMPENING ADHESIVE 审中-公开
标题翻译：声音衰减粘合剂
公开(公告)号：WO2005035679B1
公开(公告)日：2005-11-10
申请号：PCT/US2004033018
申请日：2004-10-08
申请人： AVERY DENNISON CORP , WOUTERS DOMINIQUE , VORSSELMANS JOS , HUANG ZHISONG
发明人： WOUTERS DOMINIQUE , VORSSELMANS JOS , HUANG ZHISONG
IPC分类号： C08F8/00 , C08F22/10 , C08L93/04 , C09J20060101 , C09J133/04
CPC分类号： C09J133/04 , C08L93/04 , C08L2205/02 , C08L2666/02 , C08L2666/04
摘要： Pressure sensitive adhesive compositions that exhibit sound/vibration dampening properties are provided. The pressure sensitive adhesive composition can be tailored to provide sound/vibration dampening within a desired temperature range at a specified frequency.
摘要翻译：提供具有声音/振动衰减性能的压敏粘合剂组合物。可以调整压敏粘合剂组合物以提供在特定频率的期望温度范围内的声音/振动衰减。

9. 发明申请

WO2005035679A3 SOUND DAMPENING ADHESIVE 审中-公开
标题翻译： SOUND DAMPENING粘合剂
公开(公告)号：WO2005035679A3
公开(公告)日：2005-09-29
申请号：PCT/US2004033018
申请日：2004-10-08
申请人： AVERY DENNISON CORP , WOUTERS DOMINIQUE , VORSSELMANS JOS , HUANG ZHISONG
发明人： WOUTERS DOMINIQUE , VORSSELMANS JOS , HUANG ZHISONG
IPC分类号： C08F8/00 , C08F22/10 , C08L93/04 , C09J20060101 , C09J133/04
CPC分类号： C09J133/04 , C08L93/04 , C08L2205/02 , C08L2666/02 , C08L2666/04
摘要： Pressure sensitive adhesive compositions that exhibit sound/vibration dampening properties are provided. The pressure sensitive adhesive composition can be tailored to provide sound/vibration dampening within a desired temperature range at a specified frequency.
摘要翻译：提供具有声/振动阻尼特性的压敏粘合剂组合物。压敏粘合剂组合物可以被定制以在指定频率的期望温度范围内提供声音/振动衰减。

10. 发明申请

WO0243965A9 INK JET-PRINTABLE MEDIA 审中-公开
标题翻译：墨水喷墨打印介质
公开(公告)号：WO0243965A9
公开(公告)日：2003-11-20
申请号：PCT/US0144524
申请日：2001-11-29
申请人： AVERY DENNISON CORP , SHIH FRANK YEN-JER , LAD DALUBHAI M , HUANG ZHISONG
发明人： SHIH FRANK YEN-JER , LAD DALUBHAI M , HUANG ZHISONG
IPC分类号： B41M5/00 , B41M5/52 , C08K5/00 , C09D139/06 , C09J7/02
CPC分类号： B41M5/52 , B41M5/5218 , B41M5/5227 , B41M5/5254 , C08K5/0091 , C09D139/06 , C09J7/29 , C09J2201/162 , C09J2203/334 , C08L39/06 , C08L2666/28 , C08L2666/54
摘要： Coatable compositions and ink-receptive constructions made therewith are provided. The compositions comprises a mixture of polyvinyl pyrrolidone, silica, and a chromium complex capable of crosslinking polyvinyl pyrrolidone. The compositions are particularly suited as ink-receptive topcoats for facestocks and label stocks used in ink jet and other printers.
摘要翻译：提供了由此制成的可涂覆组合物和油墨接收结构。组合物包含聚乙烯吡咯烷酮，二氧化硅和能够交联聚乙烯吡咯烷酮的铬络合物的混合物。该组合物特别适用于用于喷墨和其它打印机的面料和标签原料的油墨接受面漆。

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