专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006074050A3 ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA 审中-公开
标题翻译：电动增强等离子体的浓度
公开(公告)号：WO2006074050A3
公开(公告)日：2007-04-19
申请号：PCT/US2005047385
申请日：2005-12-29
申请人： LAM REASEARCH CORP , KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
发明人： KUTHI ANDRAS , KIM JISOO , LENZ ERIC , DHINDSA RAJINDAR , LI LUMIN , SADJADI REZA
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , Y10S156/915
摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.
摘要翻译：真空等离子体处理器包括具有接地壁和出口的室。等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

2. 发明申请

WO2010011408A8 NANOSECOND PULSE GENERATOR 审中-公开
标题翻译： NANOSECOND脉冲发生器
公开(公告)号：WO2010011408A8
公开(公告)日：2010-04-15
申请号：PCT/US2009045073
申请日：2009-05-22
申请人： UNIV SOUTHERN CALIFORNIA , SANDERS JASON , KUTHI ANDRAS , GUNDERSEN MARTIN A , MOORE WILLIAM H
发明人： SANDERS JASON , KUTHI ANDRAS , GUNDERSEN MARTIN A , MOORE WILLIAM HENRY
IPC分类号： H03K5/12
CPC分类号： H03K5/12 , C12M35/02 , H03K3/57 , H03K5/07 , H03K17/74
摘要： This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells.
摘要翻译：脉冲发生器电路技术领域本发明涉及一种用于向负载传送短高电流脉冲的脉冲发生器电路该脉冲发生器包括接点恢复二极管，开关，第一谐振电路和第二谐振电路。当存在正向电流流动时，二极管可以被配置为在其耗尽层中存储电荷，并且在耗尽层通过电流的反向放电之后快速地断开。二极管快速开关打开后，脉冲发生器可以向负载提供反向电流。该脉冲发生器可以被配置为产生至少一个脉冲，该脉冲在半高全宽和至少1千伏的幅度下具有不超过100纳秒的长度。电极可以连接到脉冲发生器以将一个脉冲或多个脉冲递送到诸如肿瘤细胞的生物细胞。

3. 发明申请

WO2006044722A3 APPARATUS AND METHODS FOR IMPROVING THE STABILITY OF RF POWER DELIVERY TO A PLASMA LOAD 审中-公开
标题翻译：用于改善RF功率输送到等离子体负载的稳定性的装置和方法
公开(公告)号：WO2006044722A3
公开(公告)日：2006-06-29
申请号：PCT/US2005037125
申请日：2005-10-12
申请人： LAM RES CORP , HOWALD ARTHUR M , KUTHI ANDRAS , BAILEY ANDREW D III
发明人： HOWALD ARTHUR M , KUTHI ANDRAS , BAILEY ANDREW D III
IPC分类号： G06F19/00 , H01J7/24 , H01J37/32 , H03H7/40
CPC分类号： H01J37/32082 , H01J37/32183 , H01J37/3299 , H03H7/40 , H05H1/46
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).
摘要翻译：公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

4. 发明申请

WO2008036210A3 METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置
公开(公告)号：WO2008036210A3
公开(公告)日：2008-07-31
申请号：PCT/US2007020050
申请日：2007-09-14
申请人： LAM RES CORP , KUTHI ANDRAS , HWANG STEPHEN , VETTER JAMES C , EILENSTINE GREG , NGO TUAN , WANG RONGPING
发明人： KUTHI ANDRAS , HWANG STEPHEN , VETTER JAMES C , EILENSTINE GREG , NGO TUAN , WANG RONGPING
IPC分类号： H01T23/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential (68) applied in a plasma chamber (40) for processing a semiconductor wafer (46). The plasma chamber includes circuitry (82) for monitoring and adjusting a pulsed RF bias voltage signal (6 to be applied to a chuck (66) in the plasma chamber, where the chuck is configured to mount the wafer for processing. Further include is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室（40）中用于处理半导体晶片（46）的电压电位（68）的装置和方法。等离子体室包括用于监测和调节脉冲RF偏置电压信号（6）以被施加到等离子体室中的卡盘（66）的电路（82），其中卡盘被配置为安装用于处理的晶片，还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

5. 发明申请

WO2007038030B1 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030B1
公开(公告)日：2008-01-24
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01J7/24 , H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

6. 发明申请

WO0145134A9 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A9
公开(公告)日：2002-11-14
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

7. 发明申请

WO2006031452A3 APPARATUS FOR THE OPTIMIZATION OF ATMOSPHERIC PLASMA IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于优化等离子体处理系统中大气等离子体的装置
公开(公告)号：WO2006031452A3
公开(公告)日：2007-03-01
申请号：PCT/US2005031105
申请日：2005-08-31
申请人： LAM RES CORP , KIM YUNSANG , KUTHI ANDRAS
发明人： KIM YUNSANG , KUTHI ANDRAS
IPC分类号： C23C16/50 , C23C16/452 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/52 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02071 , H01L21/02046 , H01L21/31116 , H05H1/2406 , H05H2001/2412 , H05H2001/2437
摘要： An apparatus for cleaning a substrate in a reactive ion etch process is disclosed. The apparatus is configured to produce an atmospheric plasma using a RF generation device. The apparatus includes a plasma forming chamber including a cavity defined by a set of interior chamber walls comprised of a dielectric material. The apparatus also includes an atmospheric plasma generated by the RF generation device, the atmospheric plasma protruding from a first end of the cavity to clean the substrate.
摘要翻译：公开了一种用于在反应离子蚀刻工艺中清洁衬底的设备。该装置被配置为使用RF产生装置产生大气等离子体。该装置包括等离子体形成室，其包括由一组由电介质材料组成的内部室壁限定的空腔。该装置还包括由RF产生装置产生的大气等离子体，大气等离子体从空腔的第一端突出以清洁衬底。

8. 发明申请

WO2006012003A3 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子体点火压力
公开(公告)号：WO2006012003A3
公开(公告)日：2006-07-06
申请号：PCT/US2005021098
申请日：2005-06-14
申请人： LAM RES CORP , WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
发明人： WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。该方法包括在等离子体点火步骤中点燃等离子体。当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

9. 发明申请

WO03096765A2 APPARATUS AND METHODS FOR MINIMIZING ARCING IN A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于最小化等离子体加工室中的ARCING的装置和方法
公开(公告)号：WO03096765A2
公开(公告)日：2003-11-20
申请号：PCT/US0313597
申请日：2003-05-01
申请人： LAM RES CORP , HOWALD ARTHUR M , KUTHI ANDRAS , BAILEY ANDREW D III , BERNEY BUTCH
发明人： HOWALD ARTHUR M , KUTHI ANDRAS , BAILEY ANDREW D III , BERNEY BUTCH
IPC分类号： H05H1/46 , C23C16/00 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/306 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32477 , H01J37/32623
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
摘要翻译：公开了一种用于处理基板以在其上形成电子部件的等离子体处理室。等离子体处理室包括在处理基板期间在等离子体处理室中具有朝向等离子体的等离子体面向表面的等离子体面向部件，等离子体面向部件与接地端子电隔离。等离子体处理室还包括耦合到等离子体面向部件的接地装置，接地装置包括设置在等离子体面向部件和接地端子之间的第一电流路径中的第一电阻电路。接地装置还包括设置在等离子体面向部件和接地端子之间的至少一个其它电流通路中的RF滤波器装置，其中选择第一电阻电路的电阻值以基本上消除等离子体和等离子体 - 在处理基板期间面对部件。

10. 发明申请

WO0145134A2 METHOD AND APPARATUS FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的方法和装置
公开(公告)号：WO0145134A2
公开(公告)日：2001-06-21
申请号：PCT/US0042174
申请日：2000-11-14
申请人： LAM RES CORP , BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
发明人： BAILEY ANDREW D III , SCHOEPP ALAN M , KUTHI ANDRAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译：公开了一种用等离子体处理衬底的等离子体处理装置。该装置包括具有第一RF频率的第一RF电源和处理室。此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。第一对同心环和第二对同心环彼此基本相同和对称地对准。大致圆形天线在处理室内形成方位对称等离子体。该装置还包括设置在天线和处理室之间的耦合窗口。耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。耦合窗具有第一层和第二层。第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式