专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012145232A1 APPARATUS AND METHOD FOR REDUCING SUBSTRATE PATTERN COLLAPSE DURING DRYING OPERATIONS 审中-公开
标题翻译：干燥操作期间减少基板图案的装置和方法
公开(公告)号：WO2012145232A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/033402
申请日：2012-04-12
申请人： LAM RESEARCH CORPORATION , LENZ, Eric , RAVKIN, Mike , MIKHAYLICHENKO, Katrina
发明人： LENZ, Eric , RAVKIN, Mike , MIKHAYLICHENKO, Katrina
IPC分类号： B08B3/00
CPC分类号： F26B3/04 , F26B21/145 , H01L21/02057 , H01L21/67034
摘要： Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region.
摘要翻译：用于干燥基底表面的装置和方法包括：接近干燥头，其具有头部本体，头部主体包括被配置为当存在时与基底的表面相对设置的处理表面。处理表面包括第一区域，第二区域和第三区域。第一区域被限定在头部主体的前缘，并且包括凹入到头部本体中的空腔区域。空腔区域包括多个入口端口，用于将蒸汽流体引入空腔区域。当存在时，第二区域靠近衬底的表面设置并且位于第一区域旁边。当存在时，第三区域靠近基板的表面设置并位于第二区域旁边。

2. 发明申请

WO2011119733A3 REDUCTION OF PARTICLE CONTAMINATION PRODUCED BY MOVING MECHANISMS IN A PROCESS TOOL 审中-公开
标题翻译：减少过程工具中移动机制产生的颗粒污染
公开(公告)号：WO2011119733A3
公开(公告)日：2012-04-19
申请号：PCT/US2011029628
申请日：2011-03-23
申请人： LAM RES CORP , LENZ ERIC H
发明人： LENZ ERIC H
IPC分类号： H01L21/02 , H01L21/00
CPC分类号： H01L21/67754 , H01L21/67742
摘要： In various exemplary embodiments described herein, a system and related method to reduce particle contamination on substrates is disclosed. The system includes a substrate traverser mechanism having tracks to transport substrate carriers with one or more traverser ducts arranged to surround, at least partially, the tracks. The one or more ducts have slits along at least a substantial portion of a length of the tracks. A traverser exhaust fan is coupled to one end of each of the one or more traverser ducts. The fan provides sufficient volumetric airflow such that a velocity of the volumetric airflow through the slits is greater than a terminal settling velocity of a predetermined particle size. The fan draws particles less than approximately the predetermined particle size generated by the substrate traverser mechanism into the one or more traverser ducts.
摘要翻译：在本文描述的各种示例性实施例中，公开了一种减少基板上的颗粒污染的系统和相关方法。该系统包括具有轨道以运送基板载体的基板横移机构，其具有设置成至少部分地围绕轨道的一个或多个横向通道。一个或多个管道沿着轨道的长度的至少大部分具有狭缝。横动器排气风扇联接到一个或多个横向通道中的每一个的一端。风扇提供足够的体积气流，使得通过狭缝的体积气流的速度大于预定粒度的终点沉降速度。风扇将小于由基板横移机构产生的大约预定粒度的颗粒吸入一个或多个横向通道。

3. 发明申请

WO2009120360A3 HIGH THROUGHPUT CLEANER CHAMBER 审中-公开
标题翻译：高通量清洁器
公开(公告)号：WO2009120360A3
公开(公告)日：2010-01-14
申请号：PCT/US2009001900
申请日：2009-03-27
申请人： LAM RES CORP , LENZ ERIC H
发明人： LENZ ERIC H
IPC分类号： H01L21/677 , H01L21/302
CPC分类号： H01L21/68764 , H01L21/6719 , H01L21/68771
摘要： A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers.
摘要翻译：一种晶片清洁室，包括多个承载臂，每个承载臂在承载臂的相对端之间具有同心安装的中点，其中晶片载体安装在承载臂的每个相对端上。集线器包括多个同心安装的驱动器，其中多个驱动器中的每一个驱动器在多个承载臂中的相应一个的臂的中点附近耦合。多个驱动器中的每一个被配置为独立于剩余的多个同心安装的驱动器来控制。相应的电动机联接到每个同心安装的驱动器，并且被配置为在包含速度曲线的程序的控制下以旋转方式移动耦合的行星架臂。至少一个清洁化学品供应头位于晶片载体的路径附近。

4. 发明申请

WO2009120360A2 HIGH THROUGHPUT CLEANER CHAMBER 审中-公开
标题翻译：高通量清洁器
公开(公告)号：WO2009120360A2
公开(公告)日：2009-10-01
申请号：PCT/US2009/001900
申请日：2009-03-27
申请人： LAM RESEARCH CORPORATION , LENZ, Eric, H.
发明人： LENZ, Eric, H.
IPC分类号： H01L21/677 , H01L21/302
CPC分类号： H01L21/68764 , H01L21/6719 , H01L21/68771
摘要： A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers.
摘要翻译：一种晶片清洁室，包括多个承载臂，每个承载臂在承载臂的相对端之间具有同心安装的中点，其中晶片载体安装在承载臂的每个相对端上。集线器包括多个同心安装的驱动器，其中多个驱动器中的每一个驱动器在多个承载臂中的相应一个的臂的中点附近耦合。多个驱动器中的每一个被配置为独立于剩余的多个同心安装的驱动器来控制。相应的电动机联接到每个同心安装的驱动器，并且被配置为在包含速度曲线的程序的控制下以旋转方式移动耦合的行星架臂。至少一个清洁化学品供应头位于晶片载体的路径附近。

5. 发明申请

WO2008061069A1 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：快速开关等离子体加工设备
公开(公告)号：WO2008061069A1
公开(公告)日：2008-05-22
申请号：PCT/US2007/084465
申请日：2007-11-12
申请人： LAM RESEARCH CORPORATION , SADJADI, Raza, S., M. , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric, H. , DHINDSA, Rajinder
发明人： SADJADI, Raza, S., M. , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric, H. , DHINDSA, Rajinder
IPC分类号： H01L21/205
CPC分类号： H01J37/32091 , H01J37/32155 , H01J37/3244 , H01J37/32449
摘要： A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
摘要翻译：提供具有电极等离子体限制区的等离子体室。用于提供第一气体和第二气体的气体分配系统连接到等离子体室，其中气体分配系统可以在小于1秒的时间内基本上替换等离子体区域中的一种气体与另一种气体。用于在第一频率范围内为电极提供功率的第一频率调谐RF电源电连接到至少一个电极，其中第一频率调谐的RF功率源能够最小化反射的RF功率。用于在第一频率范围之外的第二频率范围内为等离子体室提供功率的第二频率调谐RF电源，其中第二频率调谐的RF功率源能够使反射的RF功率最小化。

6. 发明申请

WO2008008259A3 APPARATUS AND METHOD FOR CONTROLLING PLASMA POTENTIAL 审中-公开
公开(公告)号：WO2008008259A3
公开(公告)日：2008-01-17
申请号：PCT/US2007/015509
申请日：2007-07-06
申请人： LAM RESEARCH CORPORATION , KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
发明人： KEIL, Douglas , LI, Lumin , SADJADI, Reza , HUDSON, Eric , LENZ, Eric , DHINDSA, Rajinder
IPC分类号： C23C16/00
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.

7. 发明申请

WO2007040958A3 ELECTROSTATIC CHUCK ASSEMBLY WITH DIELECTRIC MATERIAL AND/OR CAVITY HAVING VARYING THICKNESS, PROFILE AND/OR SHAPE, METHOD OF USE AND APPARATUS INCORPORATING SAME 审中-公开
公开(公告)号：WO2007040958A3
公开(公告)日：2007-04-12
申请号：PCT/US2006/036110
申请日：2006-09-15
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
发明人： DHINDSA, Rajinder , LENZ, Eric , LI, Lumin , KOZAKEVICH, Felix
IPC分类号： H01H23/00
摘要： An electrostatic chuck assembly (100) having a dielectric material (108) and/or having a cavity (106) with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support (102) and an electrostatic chuck ceramic layer (104). A dielectric layer (108) or insert is located between the conductive support (102) and an electrostatic chuck ceramic layer.

8. 发明申请

WO2005112093A2 GAS DISTRIBUTION SYSTEM HAVING FAST GAS SWITCHING CAPABILITIES 审中-公开
标题翻译：具有快速气体切换能力的气体分配系统
公开(公告)号：WO2005112093A2
公开(公告)日：2005-11-24
申请号：PCT/US2005/013582
申请日：2005-04-22
申请人： LAM RESEARCH CORPORATION , HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
发明人： HUANG, Zhisong , SAM, Jose, Tong , LENZ, Eric , DHINDSA, Rajinder , SADJADI, Reza
IPC分类号： H01L21/306
CPC分类号： C23C16/45561 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.
摘要翻译：提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。气体分配系统可以包括气体供应部分，流量控制部分和切换部分。气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

9. 发明申请

WO2005111268A2 APPARATUS INCLUDING SHOWERHEAD ELECTRODE AND HEATER FOR PLASMA PROCESSING 审中-公开
标题翻译：装置包括水平电极和加热器用于等离子体处理
公开(公告)号：WO2005111268A2
公开(公告)日：2005-11-24
申请号：PCT/US2005012221
申请日：2005-04-11
申请人： LAM RES CORP , DHINDSA RAJINDER , LENZ ERIC
发明人： DHINDSA RAJINDER , LENZ ERIC
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3244 , H01J37/32724
摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.
摘要翻译：等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。气体分配构件向喷头电极提供处理气体和射频（RF）功率。

10. 发明申请

WO2005111267A2 APPARATUS INCLUDING GAS DISTRIBUTION MEMBER SUPPLYING PROCESS GAS AND RADIO FREQUENCY (RF) POWER FOR PLASMA PROCESSING 审中-公开
标题翻译：装置包括气体分配成员供应过程气体和无线电频率（RF）等离子体处理功率
公开(公告)号：WO2005111267A2
公开(公告)日：2005-11-24
申请号：PCT/US2005012210
申请日：2005-04-11
申请人： LAM RES CORP , DHINDSA RAJINDER , LENZ ERIC
发明人： DHINDSA RAJINDER , LENZ ERIC
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J21/36 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32724 , H01L21/306
摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.
摘要翻译：一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。气体分布构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式