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1. 发明申请

WO2006012003A2 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子点火压力
公开(公告)号：WO2006012003A2
公开(公告)日：2006-02-02
申请号：PCT/US2005/021098
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION , WIEPKING, Mark , LYNDAKER, Bradford, J , KUTHI, Andras , FISCHER, Andreas
发明人： WIEPKING, Mark , LYNDAKER, Bradford, J , KUTHI, Andras , FISCHER, Andreas
IPC分类号： B23K9/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电吸盘。该方法包括在等离子体点火步骤中点燃等离子体。等离子体点火步骤在由偏置补偿电路提供给卡盘的第一偏置补偿电压基本为零并且等离子体处理室内的第一室压低于约90毫托时执行。该方法还包括在等离子体被点燃之后在衬底处理步骤中处理衬底。衬底处理步骤使用由偏置补偿电路提供的高于第一偏置补偿电压的第二偏置补偿电压以及基本上等于第一室压力的第二室压力。

2. 发明申请

WO2006012003A3 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子体点火压力
公开(公告)号：WO2006012003A3
公开(公告)日：2006-07-06
申请号：PCT/US2005021098
申请日：2005-06-14
申请人： LAM RES CORP , WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
发明人： WIEPKING MARK , LYNDAKER BRADFORD J , KUTHI ANDRAS , FISCHER ANDREAS
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电卡盘。该方法包括在等离子体点火步骤中点燃等离子体。当偏置补偿电路向卡盘提供的第一偏置补偿电压基本上为零并且等离子体处理室内的第一室压力低于约90mTorr时，执行等离子体点火步骤。该方法还包括在等离子体点燃之后的衬底处理步骤中处理衬底。基板处理步骤采用由偏置补偿电路提供的第二偏置补偿电压，该偏置补偿电压高于第一偏置补偿电压，第二室压力基本上等于第一室压力。

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