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1. 发明申请

WO2011030252A1 ZENER DIODE PROTECTION NETWORK IN SUBMOUNT FOR LEDS CONNECTED IN SERIES 审中-公开
标题翻译： ZENER二极管保护网络连接在LED系列中
公开(公告)号：WO2011030252A1
公开(公告)日：2011-03-17
申请号：PCT/IB2010/053773
申请日：2010-08-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , WEI, Yajun , COLLINS, III, William D. , STEIGERWALD, Daniel
发明人： WEI, Yajun , COLLINS, III, William D. , STEIGERWALD, Daniel
IPC分类号： H05B33/08
CPC分类号： H05B33/083 , H01L25/0753 , H01L25/167 , H01L2224/16225 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the "end" zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Q1and Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Q1 and Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. Since there are fewer zener diodes and their spacings may be small, the zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.
摘要翻译：公开了串联连接的多个（N）个LED的瞬态电压抑制电路。只有一个齐纳二极管用于连接到LED之间的每个节点，一对齐纳二极管（“端”齐纳二极管）连接到串联串的两个引脚（阳极和阴极焊盘）。因此，仅使用N + 1齐纳二极管。齐纳二极管（Q1和Qn + 1）可有效地在两个引脚之间产生背靠背齐纳二极管，因为齐纳二极管共享一个共同的p +衬底。末端齐纳二极管Q1和Qn + 1的n +区域具有最高的击穿电压要求，并且必须放置得相对较远。中间齐纳二极管的相邻n +区域具有低得多的击穿电压要求，因此可以靠近在一起。由于齐纳二极管较少，它们的间距可能较小，所以齐纳二极管可能放置在非常小的占地面积内，或者可以更大以获得更好的抑制器性能。

2. 发明申请

WO2012160455A1 P-N SEPARATION METAL FILL FOR FLIP CHIP LEDS 审中-公开
标题翻译： P-N分离金属填充片
公开(公告)号：WO2012160455A1
公开(公告)日：2012-11-29
申请号：PCT/IB2012/052062
申请日：2012-04-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LEI, Jipu , WEI, Yajun , NICKEL, Alexander H. , SCHIAFFINO, Stefano , STEIGERWALD, Daniel Alexander
发明人： LEI, Jipu , WEI, Yajun , NICKEL, Alexander H. , SCHIAFFINO, Stefano , STEIGERWALD, Daniel Alexander
IPC分类号： H01L33/62 , H01L33/00 , H01L33/48
CPC分类号： H01L33/62 , H01L24/13 , H01L24/14 , H01L33/005 , H01L33/0079 , H01L33/486 , H01L2224/13008 , H01L2224/13022 , H01L2224/13144 , H01L2224/1403 , H01L2224/14051 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2924/01019 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode (LED) structure (10) has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p- type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer (34) is formed in the gap followed by filling the gap with a metal (42). The metal is patterned to form stud bumps (40, 42, 44) that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.
摘要翻译：发光二极管（LED）结构（10）具有半导体层，包括p型层，有源层和n型层。 p-型层具有底表面，并且n型层具有通过其发射光的顶表面。蚀刻p型层和有源层的部分以露出n型层。 LED的表面用光致抗蚀剂图案化，并且铜暴露在暴露的表面上以形成与其各自的半导体层电接触的p和n电极。 n和p电极之间有间隙。为了在间隙之间提供半导体层的机械支撑，在间隙中形成介电层（34），随后用金属（42）填充间隙。金属被图案化以形成基本上覆盖LED管芯的底表面但不会使电极短路的螺柱凸块（40,42,44）。基本均匀的覆盖在后续工艺步骤中支持半导体层。

3. 发明申请

WO2012123840A1 LED HAVING VERTICAL CONTACTS REDISTRIBUTED FOR FLIP CHIP MOUNTING 审中-公开
标题翻译： LED有垂直连接重新排列用于浮动芯片安装
公开(公告)号：WO2012123840A1
公开(公告)日：2012-09-20
申请号：PCT/IB2012/050915
申请日：2012-02-28
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LEI, Jipu , CHOY, Kwong-Hin Henry , WEI, Yajun , SCHIAFFINO, Stefano , STEIGERWALD, Daniel Alexander
发明人： LEI, Jipu , CHOY, Kwong-Hin Henry , WEI, Yajun , SCHIAFFINO, Stefano , STEIGERWALD, Daniel Alexander
IPC分类号： H01L33/38 , H01L25/16
CPC分类号： H01L33/0079 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L25/167 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/05552 , H01L2224/05568 , H01L2224/06102 , H01L2224/13144 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A light emitting diode (LED) structure has semiconductor layers, including a p- type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.
摘要翻译：发光二极管（LED）结构具有半导体层，包括p型层，有源层和n型层。 p型层具有底面，n型层具有通过哪个光发射的顶面。铜层具有电连接到p型层的底表面并与之相对的第一部分。电介质壁延伸穿过铜层以将铜层的第二部分与第一部分隔离。金属分流器将铜层的第二部分电连接到n型层的顶表面。 P金属电极电连接到第一部分，并且n金属电极电连接到第二部分，其中LED结构形成倒装芯片。还描述了方法和结构的其他实施例。

4. 发明申请

WO2012049607A1 PEC BIASING TECHNIQUE FOR LEDS 审中-公开
标题翻译： PEC偏光技术
公开(公告)号：WO2012049607A1
公开(公告)日：2012-04-19
申请号：PCT/IB2011/054449
申请日：2011-10-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WEI, Yajun
发明人： WEI, Yajun
IPC分类号： H01L33/62 , H01L25/16 , H01L33/22
CPC分类号： H01L33/005 , H01L22/14 , H01L25/167 , H01L33/0095 , H01L33/22 , H01L33/62 , H01L2224/16
摘要： Each LED in an array of LEDs mounted on a submount wafer has at least a first semiconductor layer exposed and connected to a first electrode of each LED. The submount wafer has a first metal portion bonded to the first electrode of each LED for providing an energization current to each LED. The submount wafer also has a second metal portion running along and proximate to the first metal portion but not electrically connected to the first metal portion. The second metal portion may be interdigitated with the first metal portion. The second metal portion is connected to a bias voltage. When the wafer is immersed in an electrically conductive solution for electrochemical (EC) etching of the exposed first semiconductor layer, the solution electrically connects the second metal portion to the first metal portion for biasing the first semiconductor layer during the EC etching.
摘要翻译：安装在基台晶片上的LED阵列中的每个LED至少暴露并连接到每个LED的第一电极的第一半导体层。底座晶片具有接合到每个LED的第一电极的第一金属部分，以向每个LED提供通电电流。底座晶片还具有沿第一金属部分并且靠近第一金属部分延伸但不电连接到第一金属部分的第二金属部分。第二金属部分可以与第一金属部分交错。第二金属部分连接到偏置电压。当晶片浸入用于暴露的第一半导体层的电化学（EC）蚀刻的导电溶液中时，该溶液在EC蚀刻期间将第二金属部分电连接到第一金属部分以偏置第一半导体层。

5. 发明申请

WO2012049602A1 LIGHT EMITTING DEVICE WITH REDUCED EPI STRESS 审中-公开
标题翻译：具有降低EPI应力的发光装置
公开(公告)号：WO2012049602A1
公开(公告)日：2012-04-19
申请号：PCT/IB2011/054430
申请日：2011-10-07
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , DIANA, Frederic, Stephane , WEI, Yajun , SCHIAFFINO, Stefano , MORAN, Brendan, Jude
发明人： DIANA, Frederic, Stephane , WEI, Yajun , SCHIAFFINO, Stefano , MORAN, Brendan, Jude
IPC分类号： H01L33/40 , H01L33/62 , H01L23/485
CPC分类号： H01L33/641 , H01L33/12 , H01L33/40 , H01L33/486 , H01L33/56 , H01L33/62 , H01L33/642 , H01L33/644 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.
摘要翻译：将元件添加到发光器件中以减少由热循环引起的发光器件内的应力。或者或另外，根据它们的热膨胀系数及其相对成本选择用于在发光器件内形成触点的材料，铜合金比金更便宜，并且提供比铜更低的热膨胀系数。发光器件的元件也可以被构造成在热循环期间分布应力。

6. 发明申请

WO2011033407A2 LED MODULE WITH HIGH INDEX LENS 审中-公开
标题翻译：带高折射率镜头的LED模组
公开(公告)号：WO2011033407A2
公开(公告)日：2011-03-24
申请号：PCT/IB2010/053772
申请日：2010-08-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , BIERHUIZEN, Serge , WANG, Nanze Patrick , ENG, Gregory W. , SUN, Decai , WEI, Yajun
发明人： BIERHUIZEN, Serge , WANG, Nanze Patrick , ENG, Gregory W. , SUN, Decai , WEI, Yajun
IPC分类号： H01L33/58 , H01L33/48
CPC分类号： H01L33/58 , H01L25/13 , H01L25/50 , H01L33/486 , H01L33/507 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0091 , H01L2924/00
摘要： An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules.
摘要翻译：模制具有壳体和透镜的壳体阵列，或者将壳体主体的阵列模制并与透镜结合以形成具有壳体和透镜的壳体阵列。发光二极管（LED）连接到阵列中的外壳。金属焊盘的阵列可以结合到阵列的背面或用壳体阵列模制的嵌件以在壳体的背面上形成接合焊盘。将阵列分割成单独的LED模块。

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