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    • 4. 发明申请
    • PEC BIASING TECHNIQUE FOR LEDS
    • PEC偏光技术
    • WO2012049607A1
    • 2012-04-19
    • PCT/IB2011/054449
    • 2011-10-10
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.WEI, Yajun
    • WEI, Yajun
    • H01L33/62H01L25/16H01L33/22
    • H01L33/005H01L22/14H01L25/167H01L33/0095H01L33/22H01L33/62H01L2224/16
    • Each LED in an array of LEDs mounted on a submount wafer has at least a first semiconductor layer exposed and connected to a first electrode of each LED. The submount wafer has a first metal portion bonded to the first electrode of each LED for providing an energization current to each LED. The submount wafer also has a second metal portion running along and proximate to the first metal portion but not electrically connected to the first metal portion. The second metal portion may be interdigitated with the first metal portion. The second metal portion is connected to a bias voltage. When the wafer is immersed in an electrically conductive solution for electrochemical (EC) etching of the exposed first semiconductor layer, the solution electrically connects the second metal portion to the first metal portion for biasing the first semiconductor layer during the EC etching.
    • 安装在基台晶片上的LED阵列中的每个LED至少暴露并连接到每个LED的第一电极的第一半导体层。 底座晶片具有接合到每个LED的第一电极的第一金属部分,以向每个LED提供通电电流。 底座晶片还具有沿第一金属部分并且靠近第一金属部分延伸但不电连接到第一金属部分的第二金属部分。 第二金属部分可以与第一金属部分交错。 第二金属部分连接到偏置电压。 当晶片浸入用于暴露的第一半导体层的电化学(EC)蚀刻的导电溶液中时,该溶液在EC蚀刻期间将第二金属部分电连接到第一金属部分以偏置第一半导体层。