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    • 3. 发明申请
    • ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS
    • 用于半导体发光设备的电触点
    • WO2008047325A2
    • 2008-04-24
    • PCT/IB2007/054250
    • 2007-10-18
    • PHILIPS LUMILEDS LIGHTING COMPANY, LLCSCHIAFFINO, StefanoUEBBING, John Julian
    • SCHIAFFINO, StefanoUEBBING, John Julian
    • H01L33/00
    • H01L33/382H01L33/20
    • A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.
    • 公开了一种用于形成半导体发光装置的电触点的过程。 发光装置具有第一导电类型的第一层,用于产生覆盖第一层的光的有源层以及覆盖有源层的第二导电类型的第二层。 该方法包括形成穿过第二层和有源层的至少第一和第二细长电触点,以提供到第一层的电连接,第一和第二触点彼此成一定角度取向,第一触点具有第一 结束于所述第二触点附近,所述第一端与所述第二触点充分间隔开,使得当电流通过所述触点供应至所述第一层时,来自所述第一触点的所述第一端和所述第二触点的电流贡献在区域 通常在第一端和第二接触之间导致该区域中的电流密度大致等于沿着第一和第二接触的其它地方的电流密度。
    • 5. 发明申请
    • ELECTRICAL CONTACTS FOR A SEMICONDUCTOR LIGHT EMITTING APPARATUS
    • 用于半导体发光装置的电气接触
    • WO2008047325A3
    • 2008-06-19
    • PCT/IB2007054250
    • 2007-10-18
    • PHILIPS LUMILEDS LIGHTING COSCHIAFFINO STEFANOUEBBING JOHN JULIAN
    • SCHIAFFINO STEFANOUEBBING JOHN JULIAN
    • H01L33/20H01L33/38
    • H01L33/382H01L33/20
    • A process for forming electrical contacts for a semiconductor light emitting apparatus is disclosed. The light emitting apparatus has a first layer of first conductivity type, an active layer for generating light overlying the first layer, and a second layer of second conductivity type overlying the active layer. The process involves forming at least a first and a second elongate electrical contact through the second layer and the active layer to provide electrical connection to the first layer, the first and second contacts oriented at an angle to each other, the first contact having a first end in proximity with the second contact, the first end being sufficiently spaced apart from the second contact such that when current is supplied to the first layer through the contacts, current contributions from the first end of the first contact and the second contact in an area generally between the first end and the second contact cause a current density in the area that is approximately equal to a current density elsewhere along the first and second contacts.
    • 公开了一种用于形成用于半导体发光装置的电触头的工艺。 发光装置具有第一导电类型的第一层,用于产生覆盖第一层的光的有源层和覆盖有源层的第二导电类型的第二层。 该方法包括通过第二层和有源层至少形成第一和第二细长电接触以提供与第一层的电连接,第一和第二接触彼此成一定角度,第一接触具有第一 在第二触点附近端部,第一端与第二触点充分隔开,使得当电流通过触点供应到第一层时,来自第一触点的第一端和第一触点的区域中的电流贡献 通常在第一端和第二接触之间引起区域中的电流密度近似等于沿着第一和第二接触件的其他地方的电流密度。