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1. 发明申请

WO2010077865A2 DEFECT DETECTION AND RESPONSE 审中-公开
标题翻译：缺陷检测和响应
公开(公告)号：WO2010077865A2
公开(公告)日：2010-07-08
申请号：PCT/US2009068060
申请日：2009-12-15
申请人： KLA TENCOR CORP , ZHAO GUOHENG , ZAPALAC GEORGE H , NGAI SAMUEL S H , VAEZ-IRAVANI MEHDI , LEVY ADY , DHARMADHIKARI VINEET
发明人： ZHAO GUOHENG , ZAPALAC GEORGE H , NGAI SAMUEL S H , VAEZ-IRAVANI MEHDI , LEVY ADY , DHARMADHIKARI VINEET
IPC分类号： H01L21/66 , H01L31/042
CPC分类号： G06T7/001 , G01N25/72 , G02F1/1309 , G06T2207/10048 , G06T2207/30148
摘要： To increase inspection throughput, the field of view of an infrared camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation can be provided to the sample and infrared images can be captured using the infrared camera. Moving the field of view, providing the modulation, and capturing the infrared images can be synchronized. The infrared images can be filtered to generate the time delay lock-in thermography, thereby providing defect identification. This filtering can account for the number of pixels of the infrared camera in a scanning direction. For the case of optical modulation, a dark field region can be provided for the field of view throughout the moving, thereby providing an improved signal-to-noise ratio during filtering. Localized defects can be repaired by a laser integrated into the detection system or marked by ink for later repair in the production line.
摘要翻译：为了提高检查吞吐量，红外摄像机的视野可以以恒定的速度移动到样品上。在整个移动过程中，可以向样品提供调制，并可以使用红外摄像机捕获红外图像。可以同步移动视野，提供调制和捕获红外图像。可以对红外图像进行滤波以产生延时锁定热成像，从而提供缺陷识别。该过滤可以解释红外摄像机在扫描方向上的像素数。对于光调制的情况，可以在整个移动期间为视场提供暗场区域，从而在滤波期间提供改善的信噪比。局部缺陷可以通过集成到检测系统中的激光器或由墨水标记来修复，以便在生产线中进行后续修复。

2. 发明申请

WO2012138460A2 LED SOLAR ILLUMINATOR 审中-公开
标题翻译： LED太阳能照明灯
公开(公告)号：WO2012138460A2
公开(公告)日：2012-10-11
申请号：PCT/US2012028910
申请日：2012-03-13
申请人： KLA TENCOR CORP , ZHAO GUOHENG , LEVY ADY , SALNIK ALEX , VAEZ-IRAVANI MEHDI , NICOLAIDES LENA , NGAI SAMUEL S H
发明人： ZHAO GUOHENG , LEVY ADY , SALNIK ALEX , VAEZ-IRAVANI MEHDI , NICOLAIDES LENA , NGAI SAMUEL S H
IPC分类号： G01N21/01 , F21S2/00 , F21V8/00 , G01R31/26
CPC分类号： H05B33/0803
摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要翻译：一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置并且相对于目标表面大约九十度，其中所有阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器独立寻址光源的强度。

3. 发明申请

WO2010104799A3 SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE 审中-公开
标题翻译：用于确定在TERAHERTZ范围内使用辐射的样本的一个或多个特征的系统和方法
公开(公告)号：WO2010104799A3
公开(公告)日：2011-01-27
申请号：PCT/US2010026557
申请日：2010-03-08
申请人： KLA TENCOR CORP , LEVY ADY , NGAI SAMUEL , BEVIS CHRISTOPHER F , CONCINA STEFANO , FIELDEN JOHN , MIEHER WALTER , MUELLER DIETER , RICHARDSON NEIL , WACK DAN , WAGNER LARRY
发明人： LEVY ADY , NGAI SAMUEL , BEVIS CHRISTOPHER F , CONCINA STEFANO , FIELDEN JOHN , MIEHER WALTER , MUELLER DIETER , RICHARDSON NEIL , WACK DAN , WAGNER LARRY
IPC分类号： H01L21/66
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

4. 发明申请

WO03054475A2 PARAMETRIC PROFILING USING OPTICAL SPECTROSCOPIC SYSTEMS 审中-公开
标题翻译：使用光学光谱系统的参数分析
公开(公告)号：WO03054475A2
公开(公告)日：2003-07-03
申请号：PCT/US0241151
申请日：2002-12-19
申请人： KLA TENCOR CORP
发明人： SHCHEGROV ANDREI V , FABRIKANT ANATOLY , NIKOONAHAD MEHRDAD , LEVY ADY , WACK DANIEL C , BAREKET NOAH , MIEHER WALTER , DZIURA TED
IPC分类号： G01N21/21 , G01N21/47 , G01N21/95 , G01N21/956 , G03F7/20 , G01B11/06 , G01B11/24 , G01B11/30 , H01L21/66
CPC分类号： G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
摘要： A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要翻译：构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便达到参数的值。也可以考虑在周期性结构之上或之下的膜层。可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

5. 发明申请

WO03001297A3 METHOD FOR DETERMINING LITHOGRAPHIC FOCUS AND EXPOSURE 审中-公开
标题翻译：确定平版印刷焦点和曝光的方法
公开(公告)号：WO03001297A3
公开(公告)日：2003-03-20
申请号：PCT/US0220876
申请日：2002-06-26
申请人： KLA TENCOR CORP
发明人： MIEHER WALTER DEAN , DZIURA THADDEUS GERARD , LEVY ADY , MACK CHRIS
IPC分类号： G03F7/20 , G01B11/24 , G02B7/04 , G03B27/34 , G03B27/52
CPC分类号： G03F7/70491 , G03F7/706 , G03F7/70625 , G03F7/70641
摘要： The invention relates to a method for determining process parameter settings of a photolithographic system. The method includes correlating the values of a first set of one or more shape parametres (12) with the values of a first set of one or more process parameters. The method also includes determining the values of a second set of one or more shape parameters associated with one or more structures (14). The method further includes determining the values of a second set of one or more process parameters associated with forming the one or more structures by comparing the second set of one or more shape parameters with the correlated dependencies (16).
摘要翻译：本发明涉及一种用于确定光刻系统的过程参数设置的方法。该方法包括将第一组一个或多个形状参数（12）的值与第一组一个或多个工艺参数的值相关。该方法还包括确定与一个或多个结构（14）相关联的第二组一个或多个形状参数的值。该方法还包括通过将第二组一个或多个形状参数与相关依赖性（16）进行比较来确定与形成一个或多个结构相关联的第二组一个或多个工艺参数的值。

6. 发明申请

WO2006113126A3 METHOD FOR MONITORING A RETICLE 审中-公开
标题翻译：监控方法
公开(公告)号：WO2006113126A3
公开(公告)日：2009-04-09
申请号：PCT/US2006012608
申请日：2006-04-03
申请人： KLA TENCOR TECH CORP , WATSON STERLING G , LEVY ADY , MACK CHRIS A , STOKOWSKI STANLEY E , SAIDIN ZAIN K
发明人： WATSON STERLING G , LEVY ADY , MACK CHRIS A , STOKOWSKI STANLEY E , SAIDIN ZAIN K
IPC分类号： G06K9/00 , G01R31/26 , H01L21/22 , H01L21/38 , H01L21/66
CPC分类号： G03F1/84 , G03F1/38 , G03F1/50 , G03F7/70433 , G03F7/70625 , Y10S430/146
摘要： Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.
摘要翻译：网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。公开了用于监测掩模版的技术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

7. 发明申请

WO2007070475A2 SCANNING ELECTRON MICROSCOPE WITH CRT-TYPE ELECTRON OPTICS 审中-公开
标题翻译：扫描电子显微镜与CRT型电子光学
公开(公告)号：WO2007070475A2
公开(公告)日：2007-06-21
申请号：PCT/US2006047227
申请日：2006-12-11
申请人： KLA TENCOR TECH CORP , ADLER DAVID L , LEVY ADY , RICHARDSON NEIL , MCCORD MARK A
发明人： ADLER DAVID L , LEVY ADY , RICHARDSON NEIL , MCCORD MARK A
IPC分类号： G21K7/00
CPC分类号： H01J37/28 , H01J37/04 , H01J37/065 , H01J37/1475 , H01J37/18
摘要： One embodiment relates to an apparatus, including a CRT-type gun (for example, 102, or 302, or 510, or 1002, or 1113) and deflectors to generate and scan the electron beam, which utilizes the electron beam for inspection or metrology of a substrate. The apparatus may comprise a portable scanning electron microscope. Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate, where an electron beam is focused using electrostatic lenses formed by metal plates (704) supported by and separated by fused glass beads (706) or other insulating material. Another embodiment relates to a method of obtaining an electron beam image of a surface of a bulk specimen where a portable SEM device is moved to the bulk specimen. Other embodiments and features are also disclosed.
摘要翻译：一个实施例涉及一种包括CRT型枪（例如，102或302，或510，或1002或1113）和用于产生和扫描电子束的偏转器的装置，其利用电子束进行检查或计量的基底。该装置可以包括便携式扫描电子显微镜。另一实施例涉及一种检查衬底或测量衬底的方面的方法，其中电子束被使用由熔融玻璃珠（706）或其他绝缘材料支撑并由其分离的金属板（704）形成的静电透镜聚焦。另一实施例涉及一种获得便携式SEM装置移动到散装试样的散装试样的表面的电子束图像的方法。还公开了其它实施例和特征。

8. 发明申请

WO2006113145A2 SYSTEMS AND METHODS FOR MITIGATING VARIANCES ON A PATTERNED WAFER USING A PREDICTION MODEL 审中-公开
标题翻译：使用预测模型减少图形波形上的变量的系统和方法
公开(公告)号：WO2006113145A2
公开(公告)日：2006-10-26
申请号：PCT/US2006012846
申请日：2006-04-07
申请人： KLA TENCOR TECH CORP , WATSON STERLING G , LEVY ADY , MACK CHRIS A , STOKOWSKI STANLEY E , SAIDIN ZAIN K
发明人： WATSON STERLING G , LEVY ADY , MACK CHRIS A , STOKOWSKI STANLEY E , SAIDIN ZAIN K
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/84 , G03F1/36 , Y10S430/146
摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
摘要翻译：公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积在指定位置。在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

9. 发明申请

WO2004076963A3 APPARATUS AND METHOD FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 审中-公开
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：WO2004076963A3
公开(公告)日：2004-11-18
申请号：PCT/US2004005419
申请日：2004-02-23
申请人： KLA TENCOR TECH CORP , MIEHER WALTER D , LEVY ADY , GOLOVANEVSKY BORIS , FRIEDMANN MICHAEL , SMITH IAN , ADEL MICHAEL , FABRIKANT ANATOLY , BEVIS CHRISTOPHER F , FIELDEN JOHN , BAREKET NOAH , GROSS KEN , ZALICKI PIOTR , WACK DAN , DECECCO PAOLA , DZIURA THADDEUS G , GHINOVKER MARK
发明人： MIEHER WALTER D , LEVY ADY , GOLOVANEVSKY BORIS , FRIEDMANN MICHAEL , SMITH IAN , ADEL MICHAEL , FABRIKANT ANATOLY , BEVIS CHRISTOPHER F , FIELDEN JOHN , BAREKET NOAH , GROSS KEN , ZALICKI PIOTR , WACK DAN , DECECCO PAOLA , DZIURA THADDEUS G , GHINOVKER MARK
IPC分类号： G03F7/20 , G03F9/00 , G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatuses: a reflectometric, a ellipsomertic, imaging, interferometric, and/ or scanning angle system.
摘要翻译：公开了一种确定多层样本的两层之间的覆盖误差的方法。对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标，采用光学系统，从而测量来自每个周期性目标的光信号。在第一和第二结构之间有预定义的偏移。通过使用基于预定偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号，在第一和第二结构之间确定覆盖误差。光学系统包括以下装置中的任何一个或多个：反射测量，椭圆偏振，成像，干涉测量和/或扫描角度系统。

10. 发明申请

WO2006012388A3 TEST STRUCTURES AND METHODS FOR MONITORING OR CONTROLLING A SEMICONDUCTOR FABRICATION PROCESS 审中-公开
标题翻译：用于监测或控制半导体制造工艺的测试结构和方法
公开(公告)号：WO2006012388A3
公开(公告)日：2006-12-14
申请号：PCT/US2005025821
申请日：2005-07-22
申请人： KLA TENCOR TECH CORP , MONAHAN KEVIN , EICHELBERGER BRAD , LEVY ADY
发明人： MONAHAN KEVIN , EICHELBERGER BRAD , LEVY ADY
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/70625 , G03F7/70641 , G03F7/70683 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Various test structures and methods for monitoring or controlling a semiconductor fabrication process are provided. One test structure formed on a wafer as a monitor for a lithography process includes a bright field target (30) that includes first grating structures (32) . The test structure also includes a dark field target (34) that includes second grating structures (36) . The first and second grating structures have one or more characteristics that are substantially the same as one or more characteristics of device structures formed on the wafer. In addition, the test structure includes a phase shift target (38) having characteristics that are substantially the same as the characteristics of the bright field or dark field target except that grating structures (40) of the phase shift target are shifted in optical phase from the first or second grating structures. One or more characteristics of the targets can be measured and used to determine parameter (s) of the lithography process .
摘要翻译：提供了用于监测或控制半导体制造工艺的各种测试结构和方法。在作为光刻处理的监视器的晶片上形成的一个测试结构包括包括第一光栅结构（32）的明场目标（30）。测试结构还包括包括第二光栅结构（36）的暗场靶（34）。第一和第二光栅结构具有与形成在晶片上的器件结构的一个或多个特性基本上相同的一个或多个特性。此外，测试结构包括具有与亮场或暗场目标的特性基本相同的特性的相移目标（38），除了相移目标物的光栅结构（40）在光学相位第一或第二光栅结构。可以测量目标的一个或多个特征并用于确定光刻工艺的参数。

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