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1. 发明申请

WO2006009818A2 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LASER BEAM SPOTS 审中-公开
标题翻译：使用多个激光束的半导体结构处理
公开(公告)号：WO2006009818A2
公开(公告)日：2006-01-26
申请号：PCT/US2005/021406
申请日：2005-06-16
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , BRULAND, Kelly J. , LO, Ho Wai , BAIRD, Brian W. , EVANS, Frank G. , HARRIS, Richard S. , SUN, Yunlong , SWARINGEN, Stephen N.
发明人： BRULAND, Kelly J. , LO, Ho Wai , BAIRD, Brian W. , EVANS, Frank G. , HARRIS, Richard S. , SUN, Yunlong , SWARINGEN, Stephen N.
IPC分类号： H01L21/00 , H01L21/302 , H01L21/26 , H01L21/84 , H01L21/461 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： B23K26/067 , B23K26/0676 , B23K26/0853 , B23K2201/40 , G11C17/143 , G11C17/16 , G11C17/18 , G11C29/02 , G11C29/027 , H01L21/268 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N ≥ 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.
摘要翻译：方法和系统使用多个激光束在半导体衬底（740）上或内部处理导电链路。例如，一种利用N系列激光脉冲获得吞吐量优点的方法，其中N = 2。所述链路被布置成沿大致长度方向延伸的多个基本平行的行。 N系列激光脉冲沿着N个相应的波束轴传播，直到在所选择的链路上入射。所产生的激光斑点的图案可以是N个不同行中的链接，在相同行中的不同链接上，或者在同一链接上，部分地或完全重叠。所得到的激光点可以在行的长度方向上彼此偏移，或者在与行的长度方向垂直的方向上彼此偏移，或者两者偏离。

2. 发明申请

WO2005016586A2 METHODS OF AND LASER SYSTEMS FOR LINK PROCESSING USING LASER PULSES WITH SPECIALLY TAILORED POWER PROFILES 审中-公开
标题翻译：使用激光脉冲进行链接处理的特殊定制电源配置文件和激光系统的方法和激光系统
公开(公告)号：WO2005016586A2
公开(公告)日：2005-02-24
申请号：PCT/US2004/026977
申请日：2004-08-18
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC , SUN, Yunlong , HARRIS, Richard S. , LO, Ho Wai , BAIRD, Brian W. , JOHNSON, Jay Christopher
发明人： SUN, Yunlong , HARRIS, Richard S. , LO, Ho Wai , BAIRD, Brian W. , JOHNSON, Jay Christopher
IPC分类号： B23K
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0622 , B23K2201/40 , H01L2924/0002 , H01L2924/00
摘要： A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.
摘要翻译：具有特别定制的时间功率特性的激光脉冲，而不是传统的时间形状或基本上正方形的形状，切断了IC连接。特别定制的激光脉冲优选地在激光脉冲的开始处具有过冲，或者在激光脉冲的持续时间内具有尖峰。尖峰的定时优先设置在链路被大部分去除的时间之前。特别定制的激光脉冲功率轮廓允许使用更宽的激光脉冲能量范围和更短的激光波长（例如绿色和紫外线）来切断连接，而不会对基板和钝化结构材料的任何一侧和底层链接。

3. 发明申请

WO2006060160A1 NONLINEAR CRYSTAL MODIFICATIONS FOR DURABLE HIGH-POWER LASER WAVELENGTH CONVERSION 审中-公开
标题翻译：用于耐用的高功率激光波长转换的非线性晶体修改
公开(公告)号：WO2006060160A1
公开(公告)日：2006-06-08
申请号：PCT/US2005/041379
申请日：2005-11-15
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SUN, Yunlong , HARRIS, Richard S.
发明人： SUN, Yunlong , HARRIS, Richard S.
IPC分类号： H01S3/109 , G02F1/35
CPC分类号： H01S3/109
摘要： A wavelength converter (34) such as a nonlinear crystal has an angle cut exit surface (36) to separate a harmonic wavelength from a fundamental or different harmonic wavelength. A solid optical overlay medium (28) has an entrance surface (38) that is angle cut to mate with the converter exit surface (36). The optical overlay medium (28) is substantially transparent to the fundamental and selected harmonic wavelengths, has a refractive index similar to that of the wavelength converter (34), and has damage thresholds at the selected wavelengths that are greater than the respective damage thresholds of the wavelength converter (34).
摘要翻译：诸如非线性晶体的波长转换器（34）具有用于将谐波波长与基波或不同谐波波长分离的角度切除出射表面（36）。固体光学覆盖介质（28）具有与转换器出口表面（36）配合的角度切割的入口表面（38）。光学覆盖介质（28）对基波和选定的谐波波长基本上是透明的，具有与波长转换器（34）的折射率类似的折射率，并且在所选波长处具有大于相应损伤阈值的损伤阈值波长转换器（34）。

4. 发明申请

WO2009073371A2 SYSTEMS AND METHODS FOR LINK PROCESSING WITH ULTRAFAST AND NANOSECOND LASER PULSES 审中-公开
标题翻译：用ULTRAFAST和NANOSECOND激光脉冲串联处理的系统和方法
公开(公告)号：WO2009073371A2
公开(公告)日：2009-06-11
申请号：PCT/US2008/084124
申请日：2008-11-20
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SUN, Yunlong , HARRIS, Richard S.
发明人： SUN, Yunlong , HARRIS, Richard S.
IPC分类号： H01S3/10 , H01L21/30
CPC分类号： B23K26/0624 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.
摘要翻译：用于处理集成电路中的导电链路的系统和方法使用具有不同脉冲宽度的一系列激光脉冲来去除目标结构的不同部分，而不会基本上损坏导电链路下方的材料。在一个实施例中，超快激光脉冲或超快激光脉冲束去除了目标区域中的覆盖钝化层和链接材料的第一部分。然后，纳秒激光脉冲移除链路材料的第二部分以切断集成电路中的两个节点之间的电连接。纳秒激光脉冲被配置为减少或消除对下面的材料的损坏。

5. 发明申请

WO2007140144A2 BACK SIDE WAFER DICING 审中-公开
标题翻译：后面倒角
公开(公告)号：WO2007140144A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069217
申请日：2007-05-18
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , HARRIS, Richard S. , LO, Ho W.
发明人： HARRIS, Richard S. , LO, Ho W.
CPC分类号： H01L21/78 , B23K26/04 , B23K26/40 , B23K2203/50 , B28D5/0011 , H01L21/67092
摘要： Systems and methods for scribing a semiconductor wafer (410) with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer (410) is scribed from a back side (430) thereof. In one embodiment, the back side (430) of the wafer (410) is scribed following a back side grinding process but prior to removal of back side grinding tape (426). Thus, debris generated from the scribing process is prevented from being deposited on a top surface (412) of the wafer (410). To determine the location of dicing lanes or streets (424) relative to the back side (430) of the wafer (410), the top (412) side of the wafer (410) is illuminated with a light (434) configured to pass through the grinding tape (426) and the wafer (410). The light (434) is detected from the back side (430) of the wafer (410), and the streets are mapped relative to the back side (430). The back side (430) of the wafer (410) is then cut with a saw (444) or laser.
摘要翻译：用于划线半导体晶片（410）的系统和方法，所述半导体晶片（410）具有减少的或没有损坏或碎片到由划刻过程引起的单个集成电路上或之上。半导体晶片（410）从其背面（430）刻划。在一个实施例中，晶片（410）的背面（430）在后侧研磨过程之后但在去除后侧研磨带（426）之前进行划线。因此，防止从划刻过程产生的碎屑沉积在晶片（410）的顶表面（412）上。为了确定相对于晶片（410）的背面（430）的切割通道或街道（424）的位置，晶片410的顶部（412）侧被配置成通过的光（434）照射通过研磨带（426）和晶片（410）。从晶片（410）的背面（430）检测光（434），并且相对于背面（430）映射街道。然后用锯（444）或激光切割晶片（410）的后侧（430）。

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