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    • 6. 发明申请
    • METHOD OF MANUFACTURING AN INP BASED VERTICAL CAVITY SURFACE EMITTING LASER AND DEVICE PRODUCED THEREFROM
    • 制造基于垂直孔表面发射激光器的方法及其制造的器件
    • WO2006031984A2
    • 2006-03-23
    • PCT/US2005/032984
    • 2005-09-16
    • CORNING INCORPORATEDCANEAU, Catherine GHALL, Benjamin LNISHIYAMA, NobuhikoZAH, Chung-En
    • CANEAU, Catherine GHALL, Benjamin LNISHIYAMA, NobuhikoZAH, Chung-En
    • H01S5/00
    • H01S5/183B82Y20/00H01S5/34306H01S5/34313
    • A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.
    • 一种制造具有高反射率分布布拉格反射器(DBR)的磷化铟基垂直腔表面发射激光器(VCSEL)的方法,其特别适用于发射中心波长约1.30微米的光。 该方法包括以下步骤:选择特定的工作波长,确定对应于所选择的工作波长的光子能量,以摄氏度选择最大工作温度,以及制造分布布拉格反射器(DBR)的至少一半的高折射率层, 的来自AlGaInAs的VCSEL或可以在InP衬底上外延生长的其它材料,以具有等于或大于光子能量(以毫电子伏特)加上最大工作温度加和110之和的带隙 除以1.96。 具有这种带隙的高折射率层的制造在DBR中的交替层的折射率产生足够的差异,同时保持光吸收低以保持反射率至少达到期望的最高温度,并且消除 需要使用结合到InP底物的DBR,或者在其上变质生长。