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1. 发明申请

WO2012075215A2 LASER CHARACTERIZATION SYSTEM AND PROCESS 审中-公开
标题翻译：激光特性系统与工艺
公开(公告)号：WO2012075215A2
公开(公告)日：2012-06-07
申请号：PCT/US2011062752
申请日：2011-12-01
申请人： CORNING INC , WANG YIN , WYSOCKI GERARD P , XIE FENG , ZAH CHUNG-EN
发明人： WANG YIN , WYSOCKI GERARD P , XIE FENG , ZAH CHUNG-EN
IPC分类号： H01S3/1055 , H01S3/101
CPC分类号： H01S5/0042 , B82Y20/00 , G01J1/0403 , G01J1/0407 , G01J1/0414 , G01J3/021 , G01J3/1804 , G01J2001/4247 , G01R31/2635 , H01S5/141 , H01S5/3401
摘要： A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles; a steering mirror mounted on the rotary stage and oriented perpendicular to a surface of the diffraction grating; and a laser analyzer; and a laser bar positioning stage. The positioning stage is automatically moved to aligning each laser chip in a laser bar on the stage, one chip at a time, with the diffraction grating, such that a part of the laser beam emitted from a laser chip in a laser bar is reflected back to the same laser chip by the 1st order diffraction of the grating to lock the lasing wavelength and the rest of the laser beam reflected by the steering mirror is received and characterized by the laser analyzer. For each laser ship, the rotary stage is automatically rotated to rotate the diffraction grating through a range of diffraction angles relative the laser beam emitted by the laser chip, and the laser analyzer automatically characterizes the laser optical properties such as spectra, power, or spatial modes at each diffraction angle.
摘要翻译：一种用于在与半导体晶片分离的半导体激光棒上自动表征多个外腔半导体激光器芯片的系统和工艺。该系统包括安装在旋转台上的衍射光栅，用于通过衍射角范围旋转衍射光栅; 转向镜安装在旋转台上并垂直于衍射光栅的表面定向; 和激光分析仪; 和激光条定位台。自动移动定位台，使激光棒上的每个激光条与激光条中的激光芯片一次发射的部分激光束一起反射回到激光棒上，使激光棒的一部分激光束反射回来通过光栅的1阶衍射对相同的激光器芯片进行锁定以锁定激光波长，并且由转向反射镜反射的其余激光束被激光分析仪接收并表征。对于每个激光船，旋转台自动旋转以使衍射光栅相对于激光芯片发射的激光束的衍射角度旋转，并且激光分析仪自动表征激光光学特性，例如光谱，功率或空间每个衍射角的模式。

2. 发明申请

WO2011041197A1 GAS SENSOR BASED ON PHOTOACOUSTIC DETECTION 审中-公开
标题翻译：基于光电检测的气体传感器
公开(公告)号：WO2011041197A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/049922
申请日：2010-09-23
申请人： CORNING INCORPORATED , ZAH, Chung-En , CANEAU, Catherine, G. , LIU, Anping , POLLARD, Scott, C. , XIE, Feng
发明人： ZAH, Chung-En , CANEAU, Catherine, G. , LIU, Anping , POLLARD, Scott, C. , XIE, Feng
IPC分类号： G01N21/17
CPC分类号： G01N21/1702 , G01N2021/1704
摘要： A photoacoustic gas detector and photoacoustic gas detection method are disclosed. The detector includes a laser source, an acoustic resonator, and at least one tuning fork positioned along a longitudinal length of the resonator. The detector is capable of performing fast measurements of the concentration of one or more target gases over a broad temperature range.
摘要翻译：公开了一种光声气体检测器和光声气体检测方法。检测器包括激光源，声谐振器和沿着谐振器的纵向长度定位的至少一个音叉。检测器能够在宽的温度范围内快速测量一种或多种目标气体的浓度。

3. 发明申请

WO2010077810A3 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS 审中-公开
标题翻译： MQW激光结构包括多个MQW区域
公开(公告)号：WO2010077810A3
公开(公告)日：2011-03-31
申请号：PCT/US2009067853
申请日：2009-12-14
申请人： CORNING INC , BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , ZAH CHUNG-EN
发明人： BHAT RAJARAM , NAPIERALA JEROME , SIZOV DMITRY , ZAH CHUNG-EN
IPC分类号： H01S5/20 , H01S5/34
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

4. 发明申请

WO2009120353A3 SEMICONDUCTOR BURIED GRATING FABRICATION METHOD 审中-公开
标题翻译： SEMICONDUCTOR BURIED GRATING FABRICATION方法
公开(公告)号：WO2009120353A3
公开(公告)日：2009-12-30
申请号：PCT/US2009001889
申请日：2009-03-27
申请人： CORNING INC , LI YABO , SONG KECHANG , VISOVSKY NICHOLAS J , ZAH CHUNG-EN
发明人： LI YABO , SONG KECHANG , VISOVSKY NICHOLAS J , ZAH CHUNG-EN
IPC分类号： H01L21/00
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

5. 发明申请

WO2009051650A1 GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME 审中-公开
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：WO2009051650A1
公开(公告)日：2009-04-23
申请号：PCT/US2008/011578
申请日：2008-10-08
申请人： CORNING INCORPORATED , BHAT, Rajaram , GADKAREE, Kishor P , NAPIERALA, Jerome , PINCKNEY, Linda R , ZAH, Chung-En
发明人： BHAT, Rajaram , GADKAREE, Kishor P , NAPIERALA, Jerome , PINCKNEY, Linda R , ZAH, Chung-En
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

6. 发明申请

WO2009045394A1 QUANTUM WELL INTERMIXING 审中-公开
公开(公告)号：WO2009045394A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/011306
申请日：2008-09-30
申请人： CORNING INCORPORATED , LI, Yabo , SONG, Kechang , ZAH, Chung-En
发明人： LI, Yabo , SONG, Kechang , ZAH, Chung-En
IPC分类号： H01L21/18 , H01S5/34 , H01L21/324
CPC分类号： H01S5/34 , B82Y20/00 , H01L21/02546 , H01L21/02664 , H01L29/205 , H01S5/3414
摘要： Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer (1) comprising upper and lower epitaxial layers (10, 13), which each include barrier layers, and a quantum well layer (11) disposed between the upper and lower epitaxial layers (10, 13), applying at least one sacrificial layer (21) over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer (31) over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer (31) is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer (41) over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdif fusion of atoms between the quantum well layer (11) and the barrier layers of the upper epitaxial layer and the lower epitaxial layer (10, 13).
摘要翻译：量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层（10,13）的晶片（1），每个外延层各自包括阻挡层，以及设置在上和下之间的量子阱层（11）外延层（10,13），通过在牺牲层的一部分上施加QWI增强层（31），在上部外延层上施加至少一个牺牲层（21），并形成QWI增强区域和QWI抑制区域其中QWI增强层（31）下的部分是QWI增强区域，另一部分是QWI抑制区域。该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层（41），并且在足以导致量子阱层（11）和阻挡层（11）之间的原子间隙融合的温度下进行退火的上外延层和下外延层（10,13）。

7. 发明申请

WO2008048474A1 WAVELENGTH CONTROL IN WAVELENGTH SELECTIVE, PHASE, AND GAIN REGIONS OF SEMICONDUCTOR LASERS 审中-公开
标题翻译：波长范围内的波长选择，相位和增益区域的波长控制
公开(公告)号：WO2008048474A1
公开(公告)日：2008-04-24
申请号：PCT/US2007/021772
申请日：2007-10-11
申请人： CORNING INCORPORATED , BHATIA, Vikram , GOLLIER, Jacques , HU, Martin, H. , LOEBER, David, A. , RICKETTS, Daniel, O. , ZAH, Chung-En
发明人： BHATIA, Vikram , GOLLIER, Jacques , HU, Martin, H. , LOEBER, David, A. , RICKETTS, Daniel, O. , ZAH, Chung-En
IPC分类号： H04N9/31 , H01S5/0625
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06246 , H01S5/06832 , H01S5/0687 , H04N9/3129
摘要： Particular embodiments of the present invention relate generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser is configured for optical emission of encoded data. At least one parameter of the optical emission is a function of a drive current I GAIN injected into the gain section (16) of the semiconductor laser (10) and one or more additional drive currents I PHASE , I DBR. Mode selection in the semiconductor laser is altered by perturbing at least one of the additional drive currents I PHASE , I DBR witn a perturbation signal I PTRB to alter mode selection in the semiconductor laser (10) such that a plurality of different emission modes are selected in the semiconductor laser (10) over a target emission period. In this manner, patterned variations in the wavelength or intensity profile of the laser can be disrupted to disguise patterned flaws that would otherwise be readily noticeable in the output of the laser.
摘要翻译：本发明的具体实施方案一般涉及半导体激光器和激光扫描系统，更具体地，涉及用于控制半导体激光器的方案。根据本发明的一个实施例，激光器被配置用于光发射编码数据。光发射的至少一个参数是注入到半导体激光器（10）的增益部分（16）中的驱动电流I增益的函数，以及一个或多个附加驱动电流I SUB PHASE ，我DBR。半导体激光器中的模式选择通过扰动扰动信号I PTRB中的至少一个附加驱动电流I SUB，DB DB，以改变半导体激光器（10）中的模式选择，使得在目标发射周期中在半导体激光器（10）中选择多个不同的发射模式。以这种方式，可以破坏激光器的波长或强度分布的图案变化来伪装图案化的缺陷，否则在激光器的输出中将容易看出。

8. 发明申请

WO2006066050A2 SYSTEM AND METHOD FOR OPTICALLY POWERING A REMOTE NETWORK COMPONENT 审中-公开
标题翻译：用于光学地驱动远程网络组件的系统和方法
公开(公告)号：WO2006066050A2
公开(公告)日：2006-06-22
申请号：PCT/US2005/045518
申请日：2005-12-15
申请人： CORNING INCORPORATED , NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
发明人： NISHIYAMA, Nobuhiko , SAUER, Michael , ZAH, Chung-en
IPC分类号： H01S3/00
CPC分类号： H04B10/807
摘要： Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.
摘要翻译：提供了用于给诸如微微小区的应答器之类的网络组件进行光学供电的系统和方法。该系统包括用于处理输入信号的垂直腔表面发射激光器（VCSEL），位于远处的光功率源，以及用于将光功率从光源传导至VCSEL的光纤。 VCSEL可以由耦合到光纤的光电转换器产生的电流电偏置，或者从来自光功率源的光直接光偏置。偏置三通连接在输入信号和VCSEL的输入之间，使得VCSEL产生调制的光信号。该系统可以是微微小区系统的应答器，其中VCSEL产生通过相同或分离的光纤传导到头端电路的光上行链路信号。

9. 发明申请

WO2013142481A3 WAVEGUIDE STRUCTURE FOR MID-IR MULTIWAVELENGTH CONCATENATED DISTRIBUTED-FEEDBACK LASER WITH AN ACTIVE CORE MADE OF CASCADED STAGES 审中-公开
标题翻译：中红外多级激光共焦分布反馈激光器的波导结构
公开(公告)号：WO2013142481A3
公开(公告)日：2013-11-21
申请号：PCT/US2013032944
申请日：2013-03-19
申请人： CORNING INC , CANEAU CATHERINE GENEVIEVE , XIE FENG , ZAH CHUNG-EN
发明人： CANEAU CATHERINE GENEVIEVE , XIE FENG , ZAH CHUNG-EN
IPC分类号： H01S5/10 , H01S5/0625 , H01S5/12 , H01S5/34 , H01S5/40
CPC分类号： H01S5/20 , B82Y20/00 , G01N21/17 , G02B6/102 , H01S5/028 , H01S5/06258 , H01S5/1032 , H01S5/1215 , H01S5/3401 , H01S5/3402 , H01S5/34313 , H01S5/4087 , H01S2301/166
摘要： Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.
摘要翻译：公开了具有新型波导的串联分布式反馈激光器。波导允许激光束在有源和无源波导结构之间耦合，并改善了器件设计和输出效率。还公开了制造方法以及使用这些装置的方法。

10. 发明申请

WO2013142481A2 WAVEGUIDE STRUCTURE FOR MID-IR MULTIWAVELENGTH CONCATENATED DISTRIBUTED-FEEDBACK LASER WITH AN ACTIVE CORE MADE OF CASCADED STAGES 审中-公开
标题翻译：用于中红外多波长的波形结构分布式反馈激光器具有级联的活动核心
公开(公告)号：WO2013142481A2
公开(公告)日：2013-09-26
申请号：PCT/US2013/032944
申请日：2013-03-19
申请人： CORNING INCORPORATED , CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
发明人： CANEAU, Catherine Genevieve , XIE, Feng , ZAH, Chung-En
IPC分类号： G02B6/10 , H01S5/20 , G01N21/17
CPC分类号： H01S5/20 , B82Y20/00 , G01N21/17 , G02B6/102 , H01S5/028 , H01S5/06258 , H01S5/1032 , H01S5/1215 , H01S5/3401 , H01S5/3402 , H01S5/34313 , H01S5/4087 , H01S2301/166
摘要： Concatenated distributed feedback lasers having novel waveguides are disclosed. The waveguides allow for coupling of the laser beam between active and passive waveguide structures and improved device design and output efficiency. Methods of making along with methods of using such devices are also disclosed.
摘要翻译：公开了具有新颖波导的并联分布式反馈激光器。波导允许在有源和无源波导结构之间耦合激光束，并改善器件设计和输出效率。还公开了使用这种装置的方法的方法。

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