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1. 发明申请

WO2012126887A1 OPTICAL DEVICE 审中-公开
标题翻译：光学装置
公开(公告)号：WO2012126887A1
公开(公告)日：2012-09-27
申请号：PCT/EP2012/054813
申请日：2012-03-19
申请人： CARL ZEISS SMT GMBH , FREIMANN, Rolf , FELDMANN, Heiko
发明人： FREIMANN, Rolf , FELDMANN, Heiko
IPC分类号： G01M11/02 , G03F7/20
CPC分类号： G01M11/00 , G01M11/02 , G03F7/70358 , G03F7/70591 , Y10T428/24802
摘要： A device comprising an imaging optical unit (9) for imaging an object field (5) in an image field (10), a structured mask (7), which is arranged in the region of the object field (5) by means of a reticle holder (8) that can be displaced in a reticle scanning direction (21), and a sensor apparatus (25), which is arranged in the region of the image field (10) by means of a substrate holder (13) that can be displaced in a substrate scanning direction (22), wherein the mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) comprises at least one sensor row (28) with a multiplicity of sensor elements (29), and wherein the sensor apparatus (25) is embodied such that it affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the latter.
摘要翻译：一种装置，包括用于对图像场（10）中的物场（5）进行成像的成像光学单元（9），结构化掩模（7），其被布置在物场（5）的区域中，借助于可以在掩模版扫描方向（21）上移位的标线保持器（8）和传感器装置（25），其通过衬底保持器（13）布置在图像场（10）的区域中，该衬底保持器在衬底扫描方向（22）上移位，其中掩模（7）具有要在传感器装置（25）上成像的至少一个测量结构（27; 33），其中传感器装置（25）包括至少一个具有多个传感器元件（29）的传感器行（28），并且其中所述传感器装置（25）被实施为使得其在所述基板保持器（13）的位移期间提供测试所述成像光学单元（9）的可能性，用于暴露布置在其上的衬底（12）。

2. 发明申请

WO2011161024A1 METROLOGY SYSTEM 审中-公开
标题翻译：计量系统
公开(公告)号：WO2011161024A1
公开(公告)日：2011-12-29
申请号：PCT/EP2011/060155
申请日：2011-06-17
申请人： CARL ZEISS SMT GMBH , FELDMANN, Heiko
发明人： FELDMANN, Heiko
IPC分类号： G01N21/956
CPC分类号： G01B11/25 , G01B11/30 , G01N21/956 , G01N2021/95676 , G03F1/24 , G03F1/84
摘要： A metrology system for investigating objects (2) has an imaging optical system for imaging an object field (6), in which at least one portion of the object (2) to be investigated can be arranged, in an image field. An EUV (Extreme Ultraviolet) light source (3) is used to illuminate the object field (6) with illumination and imaging light (4). The image field is detected by a spatially resolving detection device. A structure generator (13) of the metrology system is configured in such away that the object (6), in a structure mode of the metrology system, is illuminated by spatially structured illumination and imaging light (4). The result is a metrology system, with which even a detection of poorly formed defects, in particular flat defect elevations in the range of few nm, is reliably possible.
摘要翻译：用于调查对象的计量系统（2）具有成像光学系统，用于成像对象场（6），其中待调查物体（2）的至少一部分可以被布置在图像场中。 EUV（极紫外）光源（3）用于照明和成像光（4）照射物场（6）。图像场由空间分辨检测装置检测。测量系统的结构发生器（13）被构造成使得在计量系统的结构模式中的对象（6）被空间结构化的照明和成像光（4）照亮。结果是一个计量系统，甚至可以检测到形成不良形状的缺陷，特别是在几nm范围内的平坦缺陷高度。

3. 发明申请

WO2012079723A1 VERFAHREN ZUR MASKENINSPEKTION SOWIE MASKENINSPEKTIONSANLAGE 审中-公开
标题翻译：方法掩模检查和掩模检查系统
公开(公告)号：WO2012079723A1
公开(公告)日：2012-06-21
申请号：PCT/EP2011/006171
申请日：2011-12-08
申请人： CARL ZEISS SMT GMBH , CARL ZEISS AG , FELDMANN, Heiko , TOTZECK, Michael
发明人： FELDMANN, Heiko , TOTZECK, Michael
IPC分类号： G03F1/84 , G03F1/00
CPC分类号： H04N7/18 , G03F1/84
摘要： Die Erfindung betrifft ein Verfahren zur Maskeninspektion sowie eine Maskeninspektionsanlage. Bei einem erfindungsgemässen Verfahren beleuchtet ein Beleuchtungssystem (210, 310, 410, 510) eine Maske (230, 330, 430, 530) mit einem Beleuchtungs-Strahlbüschel (215, 315, 415, 515), und diese Maske (230, 330, 430, 530) wird mit einem Beobachtungs-Strahlbüschel (225, 325, 425, 525) beobachtet, welches auf eine Sensoranordnung (240, 340, 440, 540) gelenkt wird, wobei das auf die Sensoranordnung (240, 340, 440, 540) auftreffende Licht zur Überprüfung des Abbildungseffektes der Maske (230, 330, 430, 530) ausgewertet wird. Das Beleuchtungssystem (210, 310, 410, 510) erzeugt auf der Maske (230, 330, 430, 530) einen beugungsbegrenzten Lichtfleck, wobei bei der Auswertung des auf die Sensoranordnung (240, 340, 440, 540) auftreffenden Lichtes ein endlicher Anteil des unter Erzeugung des Beobach- tungs-Strahlbüschels (225, 325, 425, 525) von der Maske (230, 330, 430, 530) ausgehenden Lichtes außer Betracht bleibt.
摘要翻译：本发明涉及一种用于掩模检查的方法，以及一个掩模检查系统。在本发明中，照明系统（210，310，410，510）的照明的掩模（230，330，430，530）具有照明光束束（215，315，415，515），并且该掩模（230，330的过程中， 430，530）与观察光束（225，325，425，525）中观察到，其（在传感器阵列240，340，440，540）被引导反应，所述（传感器阵列240，340，440，540上）为所述掩模的画面效果验证的入射光（230，330，430，530）进行评价。形成在掩模（230，330，430，530）的光的衍射极限的光点，该照明系统（210，310，410，510），其中，入射在所述传感器装置的评估（240，340，440，540）的光的有限部分掩模的下观察桐油束束（225，325，425，525）的产生（230，330，430，530）的出射光不被考虑。

4. 发明申请

WO2012041720A2 PROJECTION EXPOSURE APPARATUS FOR EUV MICROLITHOGRAPHY AND METHOD FOR MICROLITHOGRAPHIC EXPOSURE 审中-公开
标题翻译： EUV微型摄影用投影曝光装置及微型曝光方法
公开(公告)号：WO2012041720A2
公开(公告)日：2012-04-05
申请号：PCT/EP2011/066104
申请日：2011-09-16
申请人： CARL ZEISS SMT GMBH , BIENERT, Marc , FELDMANN, Heiko , GÖHNERMEIER, Aksel , NATT, Oliver , RUOFF, Johannes
发明人： BIENERT, Marc , FELDMANN, Heiko , GÖHNERMEIER, Aksel , NATT, Oliver , RUOFF, Johannes
IPC分类号： G03F7/20
CPC分类号： G03F7/70091 , G03F7/701 , G03F7/70425
摘要： The invention relates to a projection exposure apparatus for EUV microlithography comprising an illumination system (1) for illuminating a pattern and a projection objective (2) for imaging the pattern onto a light-sensitive substrate (5). The projection objective (2) has a pupil plane (30) with an obscuration. The illumination system (1) generates light with an angular distribution. The angular distribution has an illumination pole (35, 36) which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole (35, 36) toward large polar angles a dark zone (41, 42) is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane (30).
摘要翻译：本发明涉及一种用于EUV微光刻的投影曝光设备，其包括用于照射图案的照射系统（1）和用于将图案成像到光敏基底（5）上的投影物镜（2）。投影物镜（2）具有遮光的光瞳平面（30）。照明系统（1）产生具有角度分布的光。角度分布具有在极角范围和方位角范围上延伸的照明极（35,36），并且在该范围内光强度大于照明极点最小值。从照明极（35,36）朝向大极角，排除了暗区（41,42），在暗区内光强度小于照明极点最小值，并且在区域中具有对应于照明极的最小值的形式模糊瞳孔飞机（30）。

5. 发明申请

WO2011161243A1 METHOD AND APPARATUS FOR ANALYZING AND / OR REPAIRING OF AN EUV MASK DEFECT 审中-公开
标题翻译：用于分析和/或修复EUV掩蔽缺陷的方法和装置
公开(公告)号：WO2011161243A1
公开(公告)日：2011-12-29
申请号：PCT/EP2011/060626
申请日：2011-06-24
申请人： CARL ZEISS SMS GMBH , CARL ZEISS SMT GMBH , BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten , FELDMANN, Heiko , RUOFF, Johannes
发明人： BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten , FELDMANN, Heiko , RUOFF, Johannes
IPC分类号： G03F1/14 , G03F1/00 , G03F7/20
CPC分类号： G01N21/95 , B82Y10/00 , B82Y40/00 , C23C14/48 , G03B27/68 , G03F1/24 , G03F1/72 , G03F1/74 , G03F1/84 , G03F7/705 , G03F7/7065 , G06F17/5009 , G06T7/0002 , G21K5/00
摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
摘要翻译：本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

6. 发明申请

WO2011101331A1 ILLUMINATION SYSTEM AND PROJECTION OBJECTIVE OF A MASK INSPECTION APPARATUS 审中-公开
标题翻译：面罩检测装置的照明系统和投影目标
公开(公告)号：WO2011101331A1
公开(公告)日：2011-08-25
申请号：PCT/EP2011/052184
申请日：2011-02-15
申请人： CARL ZEISS SMT GMBH , FELDMANN, Heiko , SOHMEN, Erik Matthias , STÜHLER, Joachim , GROMER, Oswald , MÜLLER, Ulrich , LAYH, Michael , SCHWAB, Markus
发明人： FELDMANN, Heiko , SOHMEN, Erik Matthias , STÜHLER, Joachim , GROMER, Oswald , MÜLLER, Ulrich , LAYH, Michael , SCHWAB, Markus
IPC分类号： G03F1/00 , G03F7/20 , G01N21/00
CPC分类号： G03F7/70091 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： The invention concerns an illumination system and a projection objective of a mask inspection apparatus. In accordance with an aspect of the invention an illumination system (610) in operation of the mask inspection apparatus illuminates a mask (630) with an illumination bundle of rays (615) having a centroid ray, wherein said centroid ray has a direction dependent on the location of the incidence of the illumination bundle of rays (615) on the mask (630).
摘要翻译：本发明涉及一种面罩检查装置的照明系统和投影物镜。根据本发明的一个方面，在掩模检查设备的操作中的照明系统（610）用具有质心射线的照射光束（615）照射掩模（630），其中所述质心射线具有取决于照射光束束（615）入射到掩模（630）上的位置。

7. 发明申请

WO2012041807A1 MIRROR, OPTICAL SYSTEM FOR EUV PROJECTION EXPOSURE SYSTEM AND METHOD OF PRODUCING A COMPONENT 审中-公开
标题翻译：镜子，用于EUV投影曝光系统的光学系统和生产组件的方法
公开(公告)号：WO2012041807A1
公开(公告)日：2012-04-05
申请号：PCT/EP2011/066667
申请日：2011-09-26
申请人： CARL ZEISS SMT GMBH , RUOFF, Johannes , FELDMANN, Heiko
发明人： RUOFF, Johannes , FELDMANN, Heiko
IPC分类号： G03F7/20
CPC分类号： G02B5/0891 , G03F7/70066 , G03F7/70225 , G03F7/70283
摘要： A mirror (20) for EUV radiation (14) comprises a mirror body, which has at least one EUV radiation-reflecting region (23) and at least two EUV radiation-permeable regions (22). As a result, a spatial separation of the illumination and imaging beam paths is also possible with small angles of incidence and a large object-side numerical aperture.
摘要翻译：用于EUV辐射的反射镜（20）（14）包括具有至少一个EUV辐射反射区域（23）和至少两个EUV辐射透射区域（22）的镜体。结果，照射和成像光束路径的空间分离也可以具有小的入射角和大的物体侧数值孔径。

8. 发明申请

WO2022157012A1 OPTISCHES SYSTEM, LITHOGRAPHIEANLAGE UND VERFAHREN 审中-公开
公开(公告)号：WO2022157012A1
公开(公告)日：2022-07-28
申请号：PCT/EP2022/050134
申请日：2022-01-05
申请人： CARL ZEISS SMT GMBH
发明人： FELDMANN, Heiko , HEMBACHER, Stefan
IPC分类号： G03F7/20 , G02B26/06
摘要： Ein optisches System (200) für eine Lithographieanlage (100A, 100B), aufweisend ein optisches Element (202), welches ein Substrat (204) und eine an dem Substrat (204) vorgesehene optisch wirksame Fläche (210, 210ʹ) umfasst, eine Vielzahl durch das Substrat (204) hindurchlaufende Kanäle (212, 212ʹ, 214, 214ʹ, 212A, 214A, 212B, 214B, 212C, 214C, 212D, 214D, 212E, 214E, 212F, 214F, 212G, 214G, 212H, 214H, 212J, 214J, 212I, 214I), welche mit Hilfe eines Fluids (F) mit einem Druck (p) beaufschlagbar sind, wobei der optisch wirksamen Fläche (210, 210ʹ) ein Ausgangsoberflächenprofil (P1) und ein sich von dem Ausgangsoberflächenprofil (P1) unterscheidendes Zieloberflächenprofil (P2) zugeordnet sind, und wobei die optisch wirksame Fläche (210, 210ʹ) mit Hilfe eines Druckbeaufschlagens und einer dadurch bewirkten Verformung der Kanäle (212, 212ʹ, 214, 214ʹ, 212A, 214A, 212B, 214B, 212C, 214C, 212D, 214D, 212E, 214E, 212F, 214F, 212G, 214G, 212H, 214H, 212J, 214J, 212I, 214I) von dem Ausgangsoberflächenprofil (P1) in das Zieloberflächenprofil (P2) schaltbar ist.

9. 发明申请

WO2023020782A1 IMAGING OPTICAL ARRANGEMENT TO IMAGE AN OBJECT ILLUMINATED BY X-RAYS 审中-公开
公开(公告)号：WO2023020782A1
公开(公告)日：2023-02-23
申请号：PCT/EP2022/070678
申请日：2022-07-22
申请人： CARL ZEISS SMT GMBH , CARL ZEISS X-RAY MICROSCOPY, INC.
发明人： RUOFF, Johannes , ATKINSON MORA, Juan , CASE, Thomas Anthony , FELDMANN, Heiko , GRAF VOM HAGEN, Christoph Hilmar , GREGORICH, Thomas Matthew , KRAMPERT, Gerhard
IPC分类号： G21K7/00 , H01J37/244
摘要： An imaging optical arrangement serves to image an object illuminated by X-rays. An imaging optics serves to image a transfer field in a field plane into a detection field in a detection plane. A layer of scintillator material is arranged at the transfer field. A stop is arranged in a pupil plane of the imaging optics. The imaging optics has an optical axis. A center of a stop opening of the stop is arranged at a decentering distance with respect to the optical axis. Such imaging optical arrangement ensures a high quality imaging of the object irrespective of a tilt of X-rays entering the transfer field. The imaging optical arrangement is part of a detection assembly further comprising a detection array and an object mount. Such detection assembly is part of a detection system further comprising a X-ray source.

10. 发明申请

WO2020148277A1 OPTICAL DIFFRACTION COMPONENT FOR SUPPRESSING AT LEAST ONE TARGET WAVELENGTH BY DESTRUCTIVE INTERFERENCE 审中-公开
公开(公告)号：WO2020148277A1
公开(公告)日：2020-07-23
申请号：PCT/EP2020/050809
申请日：2020-01-14
申请人： CARL ZEISS SMT GMBH
发明人： FELDMANN, Heiko , BOLSINGER, Valentin , VAN DRENT, William Peter , BENSCHOP, Jozef Petrus Henricus
IPC分类号： G03F7/20 , G02B5/18
摘要： An optical diffraction component (60) serves for suppressing at least one target wavelength by destructive interference. The optical diffraction component (60) has at least three diffraction structure levels (N 1 , N 2 , N 3 , N 4 ). The diffraction structure levels (N 1 , N 2 , N 3 , N 4 ) are assignable to at least two diffraction structure groups. A first of the diffraction structure groups (35) serves for suppressing a first target wavelength λ 1 . A second of the diffraction structure groups serves for suppressing a second target wavelength λ 2 . For the two target wavelengths λ 1 and λ 2 it holds true that: (λ 1 -λ 2 ) 2 / (λ 1 + λ 2 ) 2 1 to N 4 ) can be described as a superimposition of two binary diffraction structure groups. Boundary regions (N 3 / N 1 , N 2 / N 4 , N 4 /N 3 , N 1 /N 2 ) between adjacent surface sections of each of the binary diffraction structure groups have a linear course and are superimposed on one another at most along sections 1 of the linear course. In one variant of the optical diffraction component, the arrangement of the diffraction structures is such that a wavelength range around a first target wavelength λ 1 in the infrared wavelength range, which first target wavelength is diffracted by a periodic grating structure profile, has radiation components having at least three different phases which interfere with one another destructively. The diffraction structure levels have a neutral diffraction structure level, a positive diffraction structure level and a negative diffraction structure level. The result is an optical diffraction component whose possibilities for use are extended in particular for stray light suppression.

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