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1. 发明申请

WO2017008993A1 INSPECTION SUBSTRATE AND INSPECTION METHOD 审中-公开
标题翻译：检验基板和检查方法
公开(公告)号：WO2017008993A1
公开(公告)日：2017-01-19
申请号：PCT/EP2016/063961
申请日：2016-06-16
申请人： ASML NETHERLANDS B.V.
发明人： SAEED, Seerwan , GATTOBIGIO, Giovanni, Luca , YU, Miao , EUMMELEN, Erik, Henricus, Egidius,Catharina , MIGCHELBRINK, Ferdy , VAN SOMMEREN, Daan, Daniel, Johannes,Antonius , VAN DE WINKEL, Jimmy, Matheus,Wilhelmus , RAAYMAKERS, Jeroen, Arnoldus, Leonardus, Johannes , RAS, Arnoldus, Johannes, Martinus, Jozeph , ARTS, Petrus, Martinus, Gerardus, Johannes , BUDDENBERG, Harold, Sebastiaan , KEUKENS,, Floor, Lodewijk , TANASA, Gheorghe , WOUTERS, Marijn
IPC分类号： G03F7/20 , H01L21/66
CPC分类号： G03F7/7085 , G01N21/9515 , G03F7/70341 , G03F7/7065 , G03F7/70916 , H01L22/12 , H01L27/14627 , H01L27/14678 , H01L27/14862
摘要： An inspection substrate (IW) for inspecting a component, e.g. a liquid confinement system, of an apparatus for processing production substrates, e.g. a lithographic apparatus. The inspection substrate comprises a body (200) having dimensions similar to a production substrate so that the inspection substrate is compatible with the apparatus and a sensor, e.g. an imaging device (210) or a pressure sensor, for generating inspection information relating to a parameter of a component of the apparatus proximate to the inspection substrate, the sensor being embedded in the body.
摘要翻译：用于检查部件的检查基板（IW），例如液体限制系统，用于处理生产衬底的设备，例如，光刻设备。检查基板包括具有与生产基板相似的尺寸的主体（200），使得检查基板与装置和传感器（例如，传感器）兼容。成像装置（210）或压力传感器，用于产生与靠近检查基板的装置的部件的参数有关的检查信息，传感器嵌入在主体中。

2. 发明申请

WO2015026942A1 QUALIFYING PATTERNS FOR MICROLITHOGRAPHY 审中-公开
标题翻译：用于微结构的质量模式
公开(公告)号：WO2015026942A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/051891
申请日：2014-08-20
申请人： KLA-TENCOR CORPORATION
发明人： SHI, Rui-Fang , WAGNER, Mark
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： G03F7/7065 , G03F1/70 , G03F1/84 , G03F7/705 , G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.
摘要翻译：公开了用于限定光刻掩模版的方法和装置。掩模版检查工具用于从掩模版的每个图案区域获取不同成像配置的至少两个图像。基于每个至少两个来自掩模版的图案区域的图像来重建掩模版图案。对于每个重建的掩模版图案，具有两个或多个不同工艺条件的光刻工艺在这种重建的标线图案上被建模，以产生两个或更多个相应的建模测试晶片图案。分析每两个或更多个建模的测试晶片图案，以识别对不同工艺条件敏感的改变由这种热点图案形成的晶片图案的掩模版图案的热点图案。

3. 发明申请

WO2014107522A1 DETECTING DEFECTS ON A WAFER 审中-公开
标题翻译：检测波形上的缺陷
公开(公告)号：WO2014107522A1
公开(公告)日：2014-07-10
申请号：PCT/US2014/010089
申请日：2014-01-02
申请人： KLA-TENCOR CORPORATION
发明人： LANG, Jun , CHEN, Kan , GAO, Lisheng , HUANG, Junqing
IPC分类号： H01L21/20 , H01L21/66
CPC分类号： G06T7/0004 , G01N21/8851 , G01N21/9501 , G01N2021/8867 , G03F7/70616 , G03F7/7065 , G06T7/0008 , G06T2207/10152 , G06T2207/30148
摘要： Methods and systems for detecting defects on a wafer are provided. One method includes identifying one or more characteristics of first raw output generated for a wafer that correspond to one or more geometrical characteristics of patterned features formed on the wafer and assigning individual output in second raw output generated for the wafer to different segments based on the identified one or more characteristics of the first raw output and based on the individual output in the second raw output and individual output in the first raw output that were generated at substantially the same locations on the wafer such that the one or more geometrical characteristics of the patterned features that correspond to each of the different segments in the second raw output are different.
摘要翻译：提供了用于检测晶片上的缺陷的方法和系统。一种方法包括识别对应于晶片上形成的图案化特征的一个或多个几何特征的晶片产生的第一原始输出的一个或多个特征，并且基于所识别的将针对晶片生成的第二原始输出中的各个输出分配给不同的段第一原始输出的一个或多个特征，并且基于第二原始输出中的单独输出和在第一原始输出中在晶片上的基本相同位置处产生的单独输出，使得图案化的一个或多个几何特征对应于第二原始输出中的每个不同段的特征是不同的。

4. 发明申请

WO2012112290A3 OPTICAL IMAGING SYSTEM WITH LASER DROPLET PLASMA ILLUMINATOR 审中-公开
标题翻译：具有激光滴流等离子体照明器的光学成像系统
公开(公告)号：WO2012112290A3
公开(公告)日：2012-11-22
申请号：PCT/US2012023149
申请日：2012-01-30
申请人： KLA TENCOR CORP , SOLARZ RICHARD W , DURANT STEPHANE P , HWANG SHIOW-HWEI
发明人： SOLARZ RICHARD W , DURANT STEPHANE P , HWANG SHIOW-HWEI
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/718 , G01N21/8806 , G01N21/956 , G01N2201/061 , G03F7/70033 , G03F7/7065 , H01L22/12
摘要： A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm2-sr within a spectral range from 40 nanometers to 200 nanometers.
摘要翻译：晶圆检测系统包括一个激光液滴等离子体（LDP）光源，该光源能够产生足够辐射的光线，从而可以在低至40纳米的波长进行明亮的现场检测。由LDP源产生的光被引导至晶片并且来自发光晶片的光由具有全部反射元件的高NA物镜收集。检测器检测收集的光线以进行进一步的图像处理。 LDP源包括分配供给材料的液滴的液滴生成器。由激光器产生的激发光聚焦在进料材料的液滴上。激发光与液滴的相互作用产生等离子体，该等离子体在40纳米至200纳米的光谱范围内发射具有至少10W / mm 2 -sr的辐射率的照明光。

5. 发明申请

WO2011085255A2 INSPECTION GUIDED OVERLAY METROLOGY 审中-公开
标题翻译：检验指导覆盖计量
公开(公告)号：WO2011085255A2
公开(公告)日：2011-07-14
申请号：PCT/US2011/020587
申请日：2011-01-07
申请人： KLA-TENCOR CORPORATION , CHANG, Ellis , WIDMANN, Amir , PARK, Allen
发明人： CHANG, Ellis , WIDMANN, Amir , PARK, Allen
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01N21/95607 , G01N2021/8822 , G03F7/70633 , G03F7/7065 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.
摘要翻译：检查引导覆盖测量可以包括执行图案搜索以便识别半导体晶片上的预定图案，为半导体晶片上的预定图案的所有实例生成护理区域，识别生成的内部缺陷通过对每个所产生的护理区域执行检查扫描，其中所述检查扫描包括低阈值或高灵敏度检查扫描，识别所述半导体晶片的所述预定图案的重叠部位，所述重叠部位的测量重叠误差大于使用缺陷检查技术选择重叠指定;将所生成的护理区域的所识别的缺陷的位置数据与所生成的护理区域内的所识别的覆盖位置的位置数据进行比较，以便识别其中所述缺陷接近所识别的一个或多个位置覆盖网站，并基于识别的l生成计量抽样计划 ocations。

6. 发明申请

WO2009129974A1 APPARATUS AND METHOD OF MEASURING A PROPERTY OF A SUBSTRATE 审中-公开
标题翻译：测量基板性能的装置和方法
公开(公告)号：WO2009129974A1
公开(公告)日：2009-10-29
申请号：PCT/EP2009/002857
申请日：2009-04-20
申请人： ASML Netherlands B.V. , VAN DE KERKHOF, Marcus Adrianus , VAN DER SCHAAR, Maurits , FUCHS, Andreas , COOGANS, Martyn John
发明人： VAN DE KERKHOF, Marcus Adrianus , VAN DER SCHAAR, Maurits , FUCHS, Andreas , COOGANS, Martyn John
IPC分类号： G01N21/21 , G03F7/20 , G03F9/00 , G01B11/00
CPC分类号： G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
摘要： The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.
摘要翻译：本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。特别地，正和负的第一衍射级被分离或发散，被检测并且测量它们的强度以确定衬底上的暴露层的覆盖层（或其它性质）。

7. 发明申请

WO2008077100A3 SYSTEMS AND METHODS FOR CREATING INSPECTION RECIPES 审中-公开
标题翻译：用于创建检验录像的系统和方法
公开(公告)号：WO2008077100A3
公开(公告)日：2009-09-24
申请号：PCT/US2007088129
申请日：2007-12-19
申请人： KLA TENCOR CORP , DUFFY BRIAN , KULKARNI ASHOK
发明人： DUFFY BRIAN , KULKARNI ASHOK
IPC分类号： G06F17/50 , G01R31/28
CPC分类号： G03F7/7065 , G03F7/70525
摘要： Systems and methods for creating inspection recipes are provided. One computer-implemented method for creating an inspection recipe includes acquiring a first design and one or more characteristics of output of an inspection system for a wafer on which the first design is printed using a manufacturing process. The method also includes creating an inspection recipe for a second design using the first design and the one or more characteristics of the output acquired for the wafer on which the first design is printed. The first and second designs are different. The inspection recipe will be used for inspecting wafers after the second design is printed on the wafers using the manufacturing process.
摘要翻译：提供了用于创建检查配方的系统和方法。用于创建检查配方的一种计算机实现的方法包括采用制造过程获取第一设计和用于印刷第一设计的晶片的检查系统的输出的一个或多个特性。该方法还包括使用第一设计和为其上印刷有第一设计的晶片获取的输出的一个或多个特性来创建用于第二设计的检查配方。第一和第二种设计是不同的。在使用制造工艺将第二设计印刷在晶片上之后，检查配方将用于检查晶片。

8. 发明申请

WO2008096211A3 MEASUREMENT OF CRITICAL DIMENSIONS OF SEMICONDUCTOR WAFERS 审中-公开
标题翻译：半导体波形的关键尺寸的测量
公开(公告)号：WO2008096211A3
公开(公告)日：2009-02-19
申请号：PCT/IB2007051451
申请日：2007-02-08
申请人： FREESCALE SEMICONDUCTOR INC , ANILTURK ONDER
发明人： ANILTURK ONDER
IPC分类号： G03F7/20 , G01N21/95 , H01J37/26 , H01L21/66
CPC分类号： G03F7/70683 , G03F7/70491 , G03F7/70625 , G03F7/7065
摘要： A semiconductor wafer critical dimension measurement method comprising receiving (30) an image of a site of the semiconductor wafer comprising a plurality of features, processing (34) the image to measure at least one critical dimension of at least some of the features, analysing (36) the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and using (38) the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer.
摘要翻译：一种半导体晶片临界尺寸测量方法，包括接收（30）包括多个特征的半导体晶片的位置的图像，处理（34）图像以测量至少一些特征的至少一个关键尺寸，分析（ 36）每个特征的临界尺寸并将特征确定为无缺陷特征或缺陷特征，并且使用（38）任何非缺陷特征中的至少一些的关键维度作为关键维度的度量半导体晶片的特征。

9. 发明申请

WO2009015084A2 METHODS FOR GENERATING A STANDARD REFERENCE DIE FOR USE IN A DIE TO STANDARD REFERENCE DIE INSPECTION AND METHODS FOR INSPECTING A WAFER 审中-公开
标题翻译：用于生成标准参考模型的标准参考模型的方法和标准参考模型检查方法以及用于检查波形的方法
公开(公告)号：WO2009015084A2
公开(公告)日：2009-01-29
申请号：PCT/US2008/070647
申请日：2008-07-21
申请人： KLA-TENCOR CORPORATION , BHASKAR, Kris , MCCORD, Mark , BHATTACHARYYA, Santosh , LIANG, Ardis , WALLINGFORD, Richard , ALTENDORFER, Hubert , MAAYAH, Kais
发明人： BHASKAR, Kris , MCCORD, Mark , BHATTACHARYYA, Santosh , LIANG, Ardis , WALLINGFORD, Richard , ALTENDORFER, Hubert , MAAYAH, Kais
IPC分类号： G03F7/20
CPC分类号： G03F7/7065 , G01N21/93 , G01N21/95607 , G03F1/84 , G06T7/001 , G06T2207/30148
摘要： Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer are provided. One computer-implemented method for generating a standard reference die for use in a die to standard reference die inspection includes acquiring output of an inspection system for a centrally located die on a wafer and one or more dies located on the wafer. The method also includes combining the output for the centrally located die and the one or more dies based on within die positions of the output. In addition, the method includes generating the standard reference die based on results of the combining step.
摘要翻译：提供了用于生产用于模具的标准参考模具用于标准参考模具检验的方法和用于检查晶片的方法。一种计算机实现的用于生产用于模具中的标准参考模具用于标准参考模具检查的方法包括获取用于晶片上的位于中心的管芯和位于晶片上的一个或多个管芯的检查系统的输出。该方法还包括基于输出的管芯位置组合用于位于中心的管芯和一个或多个管芯的输出。此外，该方法包括基于组合步骤的结果生成标准参考管芯。

10. 发明申请

WO2008086494A3 PHOTOMASK INSPECTION AND VERIFICATION BY LITHOGRAPHY IMAGE RECONSTRUCTION USING IMAGING PUPIL FILTERS 审中-公开
标题翻译：使用成像过滤器进行光刻图像重建的光电检测和验证
公开(公告)号：WO2008086494A3
公开(公告)日：2008-11-20
申请号：PCT/US2008050798
申请日：2008-01-10
申请人： KLA TENCOR TECH CORP , XIONG YALIN , SHI RUI-FANG
发明人： XIONG YALIN , SHI RUI-FANG
IPC分类号： G03F1/00 , G01N21/956
CPC分类号： G03F1/84 , G01N21/95607 , G03F7/7065 , G03F7/70666
摘要： A method and tool for generating reconstructed images that model the high NA effects of a lithography tool used to image patterns produced by a mask. Comparison of the reconstructed images with reference images characterize the mask. The method involves providing a mask reticle for inspection. Generating matrix values associated with a high NA corrective filter matrix that characterizes a high NA lithography system used to print from the mask. Illuminating the mask to produce a patterned illumination beam that is filtered with filters associated with the high NA corrective filter matrix elements to obtain a plurality of filtered beams that include raw image data that is processed to obtain a reconstructed image that is further processed and compared with reference images to obtain mask characterization information.
摘要翻译：一种用于产生重建图像的方法和工具，其对用于对由掩模产生的图像进行成像的光刻工具的高NA效应进行建模。重建图像与参考图像的比较表征掩模。该方法涉及提供掩模掩模以进行检查。生成与用于从掩模打印的高NA光刻系统的高NA校正滤波器矩阵相关联的矩阵值。照亮掩模以产生图案化照明光束，其用与高NA校正滤波器矩阵元素相关联的滤波器进行滤波，以获得包括原始图像数据的多个滤波光束，该原始图像数据被处理以获得进一步处理并与参考图像以获得掩模表征信息。

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