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1. 发明申请

WO2009131693A1 ION SOURCE WITH ADJUSTABLE APERTURE 审中-公开
标题翻译：离子源与可调节的孔
公开(公告)号：WO2009131693A1
公开(公告)日：2009-10-29
申请号：PCT/US2009/002521
申请日：2009-04-23
申请人： AXCELIS TECHNOLOGIES, INC. , TIEGER, Daniel , DIVERGILIO, William , EISNER, Edward , GRAF, Michael
发明人： TIEGER, Daniel , DIVERGILIO, William , EISNER, Edward , GRAF, Michael
IPC分类号： H01J37/09 , H01J37/317 , H01J27/00 , H01J27/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture (340, 342) of desired characteristics covers an ionization region of the arc chamber. In one embodiment, a movable ion extraction aperture plate (310) is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures (340, 342) and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔（340,342）覆盖电弧室的电离区域。在一个实施例中，可动离子提取孔板310相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔（340,342）的孔板，并且在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

2. 发明申请

WO2007067605A2 ION IMPLANTER WITH IONIZATION CHAMBER ELECTRODE DESIGN 审中-公开
标题翻译：离子植绒带离子室电极设计
公开(公告)号：WO2007067605A2
公开(公告)日：2007-06-14
申请号：PCT/US2006/046525
申请日：2006-12-06
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , DIVERGILIO, William
发明人： EISNER, Edward , DIVERGILIO, William
CPC分类号： H01J37/08 , H01J37/3171
摘要： An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
摘要翻译：离子注入机包括用于产生沿着光束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以离子注入工件的表面离子束。离子源包括电离室和限定电离室孔的电离室电极，其中电离室电极包括用于在邻近电离室电极的区域中产生基本均匀的电场的凸起部分。

3. 发明申请

WO2010008469A2 SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY 审中-公开
标题翻译：控制光束均匀性的系统和方法
公开(公告)号：WO2010008469A2
公开(公告)日：2010-01-21
申请号：PCT/US2009/003742
申请日：2009-06-23
申请人： AXCELIS TECHNOLOGIES, INC. , SATOH, Shu , SIERADSKI, Manny , EISNER, Edward
发明人： SATOH, Shu , SIERADSKI, Manny , EISNER, Edward
IPC分类号： H01J27/02 , H01J27/00
CPC分类号： H01J37/05 , H01J37/304 , H01J37/3171 , H01J2237/006 , H01J2237/057 , H01J2237/24507 , H01J2237/24542 , H01J2237/24578 , H01J2237/31703
摘要： An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.
摘要翻译：一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分，用于测量宽离子束剖面的法拉第杯分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

4. 发明申请

WO2013106220A1 BEAM LINE DESIGN TO REDUCE ENERGY CONTAMINATION 审中-公开
标题翻译：光束线设计，以减少能源污染
公开(公告)号：WO2013106220A1
公开(公告)日：2013-07-18
申请号：PCT/US2013/000017
申请日：2013-01-14
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/317 , H01J37/05 , H01J37/16
CPC分类号： H01J37/147 , G01K5/00 , H01J37/05 , H01J37/16 , H01J37/3171 , H01J2237/0213 , H01J2237/022 , H01J2237/31705
摘要： Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.
摘要翻译：可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。包括其间的表面区域和凹槽的突起物可以在束线组件内的工件的视线范围内面对中性轨迹。突起可以改变中立轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步降低更敏感的植入物的能量污染。

5. 发明申请

WO2011139340A1 THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS 审中-公开
标题翻译：扫描光束离子植入物的强化增强
公开(公告)号：WO2011139340A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/000735
申请日：2011-04-27
申请人： AXCELIS TECHNOLOGIES INC. , EISNER, Edward , VANDERBERG, Bo
发明人： EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/1472 , H01J37/3026 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： An ion implantation method and system for providing greater throughput is disclosed. An ion beam (112) is scanned across the surface of a workpiece at a first scan rate (V slowScan ) when a cross-sectional area of the ion beam is entirely impingent on the surface of the workpiece; and the first scan rate is increased to a second rate (V FastScan ) at a location (214) where a portion of the cross sectional area of the beam extends beyond the outer edge (140) of the workpiece. Some embodiments use a scan pattern where beam flux measurements are taken off-workpiece during actual implantation, and where the implantation routine can be changed in real-time to account for changes in beam flux.
摘要翻译：公开了一种用于提供更大吞吐量的离子注入方法和系统。当离子束的横截面积完全冲击在工件的表面上时，离子束（112）以第一扫描速率（VslowScan）横跨工件的表面扫描; 并且在位置（214）处的第一扫描速率增加到第二速率（VFastScan），其中梁的横截面积的一部分延伸超过工件的外边缘（140）。一些实施例使用扫描模式，其中在实际植入期间将工件的光束通量测量值取消，并且其中可以实时改变注入程序以考虑光束通量的变化。

6. 发明申请

WO2010085351A1 ION BEAM ANGLE CALIBRATION AND EMITTANCE MEASUREMENT SYSTEM FOR RIBBON BEAMS 审中-公开
标题翻译：离子束角度校准和辐射测量系统
公开(公告)号：WO2010085351A1
公开(公告)日：2010-07-29
申请号：PCT/US2010/000169
申请日：2010-01-22
申请人： AXCELIS TECHNOLOGIES, INC. , FARLEY, Marvin , POLNER, Donald , RYDING, Geoffrey , SMICK, Theodore , SAKASE, Takao , HORNER, Ronald , EISNER, Edward , EIDE, Paul , FREER, Brian , LAMBERT, Mark , BECKEL, Donovan
发明人： FARLEY, Marvin , POLNER, Donald , RYDING, Geoffrey , SMICK, Theodore , SAKASE, Takao , HORNER, Ronald , EISNER, Edward , EIDE, Paul , FREER, Brian , LAMBERT, Mark , BECKEL, Donovan
IPC分类号： H01J37/244 , H01J37/317
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24507 , H01J2237/24528 , H01J2237/24535 , H01J2237/24542
摘要： An ion beam angle calibration and emittance measurement system (200), comprising a plate comprising an elongated slit (204) therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion (213) to pass therethrough. A beam current detector (202) located downstream of the plate, wherein the beam current detector comprises a slit (208) therein configured to permit a second beam portion (215) of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector (206) is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.
摘要翻译：一种离子束角度校准和发射测量系统（200），包括其中包括细长狭缝（204）的板，其中所述细长狭缝位于所述板的旋转中心并且被配置为允许第一梁部分（213）通过穿过。一种位于所述板下游的光束电流检测器（202），其中所述光束电流检测器包括其中构造成允许所述第一光束部分的第二光束部分（215）穿过其中的狭缝（208），其中所述光束电流检测器被配置为测量与所述第一光束部分相关联的第一光束电流。光束角度检测器（206）位于束电流检测器的下游，并被配置为检测与第二光束部分相关联的第二光束电流。板，当前的束检测器和束角检测器构造成围绕板的旋转中心共同旋转。

7. 发明申请

WO2010033199A1 ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION 审中-公开
标题翻译：用于离子植入的可调偏差光学
公开(公告)号：WO2010033199A1
公开(公告)日：2010-03-25
申请号：PCT/US2009/005182
申请日：2009-09-17
申请人： AXCELIS TECHNOLOGIES INC. , GRAF, Mike , EISNER, Edward , VANDERBERG, Bo
发明人： GRAF, Mike , EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/04735 , H01J2237/04756 , H01J2237/049 , H01J2237/12
摘要： A deflection component (236) suitable for use in an ion implantation system comprises multiple electrodes (236a, 236b) that can be selectively biased to cause an ion beam (124) passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc. ).
摘要翻译：适合用于离子注入系统的偏转组件（236）包括多个电极（236a，236b），其可被选择性地偏置，以使离子束（124）穿过其中弯曲，偏转，聚焦，发散，加速，减速和/或净化。由于电极可以被选择性地偏置，并且因此它们中的一个或多个可以保持不偏差或截止，可以根据需要选择性地调节光束路径的有效长度（例如，基于光束性质，例如能量，剂量，物种，等等）。

8. 发明申请

WO2008036192A2 SYSTEM AND MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM 审中-公开
标题翻译：离子束的系统和磁性扫描和校正
公开(公告)号：WO2008036192A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/019903
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , RATHMELL, Robert , EISNER, Edward
发明人： VANDERBERG, Bo , RATHMELL, Robert , EISNER, Edward
IPC分类号： H01J37/317 , H01J37/147
CPC分类号： H01J37/026 , H01J37/1475 , H01J37/3171 , H01J2237/004 , H01J2237/0041 , H01J2237/055
摘要： A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.
摘要翻译：磁扫描仪采用恒定磁场来减轻零场效应。该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。

9. 发明申请

WO2008033448A2 SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS 审中-公开
标题翻译：离子植入物中光束角度调整的系统和方法
公开(公告)号：WO2008033448A2
公开(公告)日：2008-03-20
申请号：PCT/US2007/019902
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , EISNER, Edward
发明人： VANDERBERG, Bo , EISNER, Edward
CPC分类号： H01J37/3171 , H01J37/1471 , H01J37/1472 , H01J2237/24528
摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
摘要翻译：离子注入系统采用质量分析仪进行质量分析和角度校正。离子源沿着光束路径产生离子束。质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。角度测量系统位于分辨孔径的下游，并获得离子束的入射角。控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

10. 发明申请

WO2012134601A1 METHOD AND APPARATUS FOR IMPROVED UNIFORMITY CONTROL WITH DYNAMIC BEAM SHAPING 审中-公开
标题翻译：用于改进动态波束形状均匀控制的方法和装置
公开(公告)号：WO2012134601A1
公开(公告)日：2012-10-04
申请号：PCT/US2012/000179
申请日：2012-03-29
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward
发明人： EISNER, Edward
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J3/14 , G21K5/10 , H01J37/302 , H01J37/3171 , H01J2237/049 , H01J2237/30477 , H01J2237/30483
摘要： The present invention relates to a method and apparatus for varying the cross - sectional shape (308a, 308b, 308c) of an ion beam, as the ion beam is scanned over the surface of a workpiece (304), to generate a time - averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross - sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross - sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross - sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.
摘要翻译：本发明涉及一种用于当离子束扫描在工件（304）的表面上时改变离子束的横截面形状（308a，308b，308c）的方法和装置，以产生时间平均具有改进的离子束电流分布均匀性的离子束。在一个实施例中，离子束的横截面形状随着离子束移动穿过工件的表面而变化。离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

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