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1. 发明申请

WO2005024911A2 UNIPOLAR ELECTROSTATIC QUADRUPOLE LENS AND SWITCHING METHODS FOR CHARGED BEAM TRANSPORT 审中-公开
标题翻译：单极静电四极透镜和充电梁传输的开关方法
公开(公告)号：WO2005024911A2
公开(公告)日：2005-03-17
申请号：PCT/US2004/028656
申请日：2004-09-02
申请人： AXCELIS TECHNOLOGIES INC. , DIVERGILIO, William , HUANG, Youngzhang
发明人： DIVERGILIO, William , HUANG, Youngzhang
IPC分类号： H01L21/00
CPC分类号： H01J37/12 , H01J37/153 , H01J37/3171 , H01J2237/04735 , H01J2237/04737 , H01J2237/04924
摘要： The present invention mitigates loss of beam current, particularly for low energy ion beam transport. The present invention employs unipolar electrostatic quadrupole lenses instead of conventional dual positive and negative potential (bipolar) quadrupole lenses as beam focusing elements within a linear accelerator, reducing beam current losses therein. In addition, the present invention also includes systems and methods for switching between bipolar wiring and unipolar wiring.
摘要翻译：本发明减轻了束电流的损失，特别是对于低能量离子束传输。本发明采用单极静电四极透镜代替传统的双正负电位（双极）四极透镜作为线性加速器内的光束聚焦元件，减少了其中的光束电流损失。另外，本发明还包括用于在双极配线和单极配线之间切换的系统和方法。

2. 发明申请

WO2011059504A3 METHOD AND APPARATUS FOR CLEANING RESIDUE FROM AN ION SOURCE COMPONENT 审中-公开
标题翻译：清除离子源组分中残留物的方法和设备
公开(公告)号：WO2011059504A3
公开(公告)日：2011-10-27
申请号：PCT/US2010002969
申请日：2010-11-12
申请人： AXCELIS TECH INC , SRIVASTAVA ASEEM , DIVERGILIO WILLIAM , GILCHRIST GLEN
发明人： SRIVASTAVA ASEEM , DIVERGILIO WILLIAM , GILCHRIST GLEN
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： C23C14/48 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/0225
摘要： Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.
摘要翻译：本文公开的一些技术有助于清除分子束成分中的残留物。例如，在示例性方法中，沿着光束路径提供分子束，导致在分子束分量上形成残留物。为了减少残留物，分子束成分暴露于氢氟碳等离子体。基于是否满足第一预定条件来结束对氢氟碳化合物等离子体的暴露，第一预定条件指示残余物的去除程度。其他方法和系统也被公开。

3. 发明申请

WO2010085349A1 ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION 审中-公开
标题翻译：在离子植入中增强低能量离子束运输
公开(公告)号：WO2010085349A1
公开(公告)日：2010-07-29
申请号：PCT/US2010/000167
申请日：2010-01-22
申请人： AXCELIS TECHNOLOGIES INC. , VANDERBERG, Bo , DIVERGILIO, William
发明人： VANDERBERG, Bo , DIVERGILIO, William
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/05 , H01J2237/0041 , H01J2237/055
摘要： An ion implantation method and system that incorporate beam neutralization to mitigate beam blowup, which can be particularly problematic in low-energy, high-current ion beams. The beam neutralization component can be located in the system where blowup is likely to occur. The neutralization component includes a varying energizing field generating component that generates plasma that neutralizes the ion beam and thereby mitigates beam blowup. The energizing field is generated with varying frequency and/or field strength in order to maintain the neutralizing plasma while mitigating the creation of plasma sheaths that reduce the effects of the neutralizing plasma.
摘要翻译：一种离子注入方法和系统，其结合光束中和以减轻光束吹胀，这在低能量，高电流离子束中可能是特别有问题的。光束中和组件可以位于可能发生喷射的系统中。中和组件包括变化的激发场产生组件，其产生中和离子束的等离子体，从而减轻束吹。产生具有变化的频率和/或场强的激励场，以便维持中和等离子体，同时减轻等离子体护套的产生，从而降低中和等离子体的影响。

4. 发明申请

WO2011149546A1 HEATED ROTARY SEAL AND BEARING FOR CHILLED ION IMPLANTATION SYSTEM 审中-公开
标题翻译：加热旋转密封和轴承用于冷冻离子植入系统
公开(公告)号：WO2011149546A1
公开(公告)日：2011-12-01
申请号：PCT/US2011/000955
申请日：2011-05-26
申请人： AXCELIS TECHNOLOGIES INC. , LEE, William , DIVERGILIO, William , DRUMMOND, Steve
发明人： LEE, William , DIVERGILIO, William , DRUMMOND, Steve
IPC分类号： H01J37/317 , H01J37/20
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/166 , H01J2237/2001 , H01J2237/20214
摘要： A workpiece scanning system is provided having a scan arm (202) that rotates about a first axis and a chilled end effector (206) rotatably coupled to the scan arm about a second axis for selectively securing a workpiece. The chilled end effector has a clamping plate (212) and one or more cooling mechanisms for cooling the clamping plate. A bearing is positioned along the second axis and rotatably couples the end effector to the scan arm, and a seal is positioned along the second axis to provide a pressure barrier between an external environment and an internal environment. One or more of the bearing and seal can have a ferrofluid associated therewith. A heater assembly is positioned proximate to the bearing and seal, wherein the heater assembly selectively provides a predetermined amount of heat to the bearing and seal, therein increasing a propensity of the end effector to rotate about the second axis.
摘要翻译：提供了一种工件扫描系统，其具有围绕第一轴线旋转的扫描臂（202）和可旋转地联接到扫描臂的冷却端部执行器（206），围绕第二轴线选择性地固定工件。冷冻末端执行器具有夹板（212）和用于冷却夹板的一个或多个冷却机构。轴承沿着第二轴线定位并且将端部执行器可旋转地联接到扫描臂，并且沿着第二轴线定位密封件以在外部环境和内部环境之间提供压力障碍。轴承和密封件中的一个或多个可以具有与其相关联的铁磁流体。加热器组件靠近轴承和密封定位，其中加热器组件选择性地向轴承和密封提供预定量的热量，其中增加端部执行器围绕第二轴线旋转的倾向。

5. 发明申请

WO2009054966A1 DOUBLE PLASMA ION SOURCE 审中-公开
标题翻译：双等离子源
公开(公告)号：WO2009054966A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/012008
申请日：2008-10-22
申请人： AXCELIS TECHNOLOGIES, INC. , DIVERGILIO, William
发明人： DIVERGILIO, William
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J27/16 , H01J37/077 , H01J2237/06366 , H01J2237/082 , H01J2237/31701
摘要： An ion source 100, comprising a first plasma chamber 102 including a plasma generating component 104 and a first gas inlet 122 for receiving a first gas such that said plasma generating component 104 and said first gas interact to generate a first plasma within said first plasma chamber 102, wherein said first plasma chamber 102 further defines an aperture 114 for extracting electrons from said first plasma, and a second plasma chamber 116 including a second gas inlet 118 for receiving a second gas, wherein said second plasma chamber 116 further defines an aperture 117 in substantial alignment with the aperture 112 of said first plasma chamber 102, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber 116, said second plasma chamber 116 further defining an extraction aperture 120 for extracting ions from said second plasma.
摘要翻译：离子源100，包括包括等离子体产生部件104的第一等离子体室102和用于接收第一气体的第一气体入口122，使得所述等离子体产生部件104和所述第一气体相互作用以在所述第一等离子体室内产生第一等离子体 102，其中所述第一等离子体室102还限定用于从所述第一等离子体提取电子的孔114和包括用于接收第二气体的第二气体入口118的第二等离子体室116，其中所述第二等离子体室116还限定孔117 与所述第一等离子体室102的孔112基本对准，用于接收从其提取的电子，使得电子和第二气体相互作用以在所述第二等离子体室116内产生第二等离子体，所述第二等离子体室116进一步限定提取用于从所述第二等离子体提取离子的孔120。

6. 发明申请

WO2008070002A1 WIDE AREA RADIO FREQUENCY PLASMA APPARATUS FOR PROCESSING MULTIPLE SUBSTRATES 审中-公开
标题翻译：用于处理多个基板的宽带无线电等离子体设备
公开(公告)号：WO2008070002A1
公开(公告)日：2008-06-12
申请号：PCT/US2007/024697
申请日：2007-11-30
申请人： AXCELIS TECHNOLOGIES, INC. , DIVERGILIO, William , SRIVASATAVA, Aseem
发明人： DIVERGILIO, William , SRIVASATAVA, Aseem
IPC分类号： H01Q1/36 , H01Q21/06
CPC分类号： H01Q1/364 , H01J37/321 , H01Q21/061 , H05H1/46
摘要： An antenna array (28) for a radio frequency plasma process chamber including, an array of electrodes (34), an array of dielectric tubes (36) concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal (40) between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.
摘要翻译：一种用于射频等离子体处理室的天线阵列（28），包括：电极阵列（34），围绕每个电极管同心设置的电介质管阵列（36），以限定被构造成处于外部每个电极管的表面和对应的电介质管的内表面，以及每个电介质管和等离子体处理室之间的密封（40），其被配置为允许等离子体处理室中的真空或低压。

7. 发明申请

WO2012154217A1 RF COUPLED PLASMA ABATEMENT SYSTEM COMPRISING AN INTEGRATED POWER OSCILLATOR 审中-公开
标题翻译：包含集成功率振荡器的射频耦合等离子体放电系统
公开(公告)号：WO2012154217A1
公开(公告)日：2012-11-15
申请号：PCT/US2012/000235
申请日：2012-05-04
申请人： AXCELIS TECHNOLOGIES, INC. , SRIVASTAVA, Aseem , DIVERGILIO, William
发明人： SRIVASTAVA, Aseem , DIVERGILIO, William
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： A61H35/006 , C23C16/4401 , C23C16/4412 , C23C16/50 , H01J37/32128 , H01J37/32174 , H01J37/32844 , Y02C20/30
摘要： The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.
摘要翻译：本公开涉及一种用于使用使用基于消除等离子体的负载的反馈驱动的集成功率振荡器电路点燃和维持的RF等离子体来产生处理室下游的减排等离子体的方法和装置。在一个实施例中，等离子体灰化系统包括被配置为从包含工件的上游处理室接收流出物副产物的减排系统。流出物副产物沿着排气管道被提供到具有集成的功率振荡器的下游后燃器单元，其依赖于可操作地耦合到天线的振荡电路以点燃排气管道内的消除等离子体。天线与等离子体负载一起形成谐振回路，其提供驱动振荡电路的操作的反馈，从而允许振荡电路基于消除等离子体负载的变化来改变其输出。

8. 发明申请

WO2009131693A1 ION SOURCE WITH ADJUSTABLE APERTURE 审中-公开
标题翻译：离子源与可调节的孔
公开(公告)号：WO2009131693A1
公开(公告)日：2009-10-29
申请号：PCT/US2009/002521
申请日：2009-04-23
申请人： AXCELIS TECHNOLOGIES, INC. , TIEGER, Daniel , DIVERGILIO, William , EISNER, Edward , GRAF, Michael
发明人： TIEGER, Daniel , DIVERGILIO, William , EISNER, Edward , GRAF, Michael
IPC分类号： H01J37/09 , H01J37/317 , H01J27/00 , H01J27/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture (340, 342) of desired characteristics covers an ionization region of the arc chamber. In one embodiment, a movable ion extraction aperture plate (310) is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures (340, 342) and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔（340,342）覆盖电弧室的电离区域。在一个实施例中，可动离子提取孔板310相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔（340,342）的孔板，并且在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

9. 发明申请

WO2009061485A1 PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER 审中-公开
标题翻译：用于离子束植绒的等离子体电子水
公开(公告)号：WO2009061485A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/012599
申请日：2008-11-06
申请人： AXCELIS TECHNOLOGIES, INC , VANDERBERG, Bo , DIVERGILIO, William
发明人： VANDERBERG, Bo , DIVERGILIO, William
IPC分类号： H01J37/077 , H01J3/00 , H01J37/02 , H01J37/317
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/06366
摘要： A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.
摘要翻译：一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

10. 发明申请

WO2007067605A2 ION IMPLANTER WITH IONIZATION CHAMBER ELECTRODE DESIGN 审中-公开
标题翻译：离子植绒带离子室电极设计
公开(公告)号：WO2007067605A2
公开(公告)日：2007-06-14
申请号：PCT/US2006/046525
申请日：2006-12-06
申请人： AXCELIS TECHNOLOGIES, INC. , EISNER, Edward , DIVERGILIO, William
发明人： EISNER, Edward , DIVERGILIO, William
CPC分类号： H01J37/08 , H01J37/3171
摘要： An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.
摘要翻译：离子注入机包括用于产生沿着光束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以离子注入工件的表面离子束。离子源包括电离室和限定电离室孔的电离室电极，其中电离室电极包括用于在邻近电离室电极的区域中产生基本均匀的电场的凸起部分。

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