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1. 发明申请

WO2006065571A3 FUEL CELL CONDITIONING LAYER 审中-公开
标题翻译：燃料电池调节层
公开(公告)号：WO2006065571A3
公开(公告)日：2009-06-04
申请号：PCT/US2005043912
申请日：2005-12-05
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , BACHRACH ROBERT , WHITE JOHN M , BLONIGAN WENDELL T
发明人： WON TAE KYUNG , BACHRACH ROBERT , WHITE JOHN M , BLONIGAN WENDELL T
IPC分类号： C23C14/35 , B32B7/00
CPC分类号： C23C16/24 , C23C16/345 , H01M8/0213 , H01M8/0215 , H01M8/0226 , H01M8/0228
摘要： A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mixture of precursors of the hydrophilic material layer. In addition, the method includes reducing a fluid contact angle of the substrate surface. The hydrophilic material layer comprises a wet etch rate of less than about 0.03 Å/min in the presence of about 10 ppm of hydrofluoric acid in water. The material layer can be used to condition various parts of a fuel cell useful in applications to generate electricity.
摘要翻译：描述了用于沉积材料层以处理和调节诸如燃料电池部件的基板的方法和装置。该方法包括在亲水材料层的前体的混合物的处理室中的基底表面的一部分上沉积亲水材料层。此外，该方法包括降低衬底表面的流体接触角。在大约10ppm氢氟酸存在下，亲水性材料层包括小于约0.03 /分钟的湿蚀刻速率。材料层可用于调节用于发电的燃料电池的各种部件。

2. 发明申请

WO2006135464B1 LINEAR VACUUM DEPOSITION SYSTEM 审中-公开
标题翻译：线性真空沉积系统
公开(公告)号：WO2006135464B1
公开(公告)日：2007-02-15
申请号：PCT/US2006009090
申请日：2006-03-14
申请人： APPLIED MATERIALS INC , BLONIGAN WENDELL T , WHITE JOHN M
发明人： BLONIGAN WENDELL T , WHITE JOHN M
IPC分类号： H01L21/677
CPC分类号： H01L21/67706 , B65G49/064 , B65G2249/04 , B65G2249/045 , C03C17/002 , C23C14/56 , C23C16/54 , H01L21/67709 , H01L21/67715 , H01L21/67736 , H01L21/6776
摘要： Embodiments of a vacuum conveyor system are provided herein. In one embodiment a vacuum conveyor system includes a first vacuum sleeve having a plurality of rollers that support and move substrates through the first vacuum sleeve. A port is provided for sealably coupling the first vacuum sleeve to a process chamber. A first substrate handler is disposed proximate the port. Multiple ports may be provided for sealably coupling the first vacuum sleeve to a plurality of process chambers. A dedicated substrate handler is provided for each process chamber. A second vacuum sleeve may be sealably coupled to an opposing side of the process chambers. The vacuum conveyor system may be modular with independent modules linked via load lock chambers. The plurality of rollers may compensate for any sag of the leading edge of a substrate being transported thereupon.
摘要翻译：本文提供了真空输送系统的实施例。在一个实施例中，真空输送系统包括具有支撑并移动基板通过第一真空套筒的多个辊的第一真空套筒。提供端口用于将第一真空套筒密封地联接到处理室。第一衬底处理器设置在端口附近。可以提供多个端口用于将第一真空套管密封地联接到多个处理室。为每个处理室提供专用的基板处理器。第二真空套筒可以密封地联接到处理室的相对侧。真空输送系统可以是模块化的，具有通过负载锁定室连接的独立模块。多个辊可以补偿在其上运送的基板的前缘的任何下垂。

3. 发明申请

WO2009129391A3 LOW TEMPERATURE THIN FILM TRANSISTOR PROCESS, DEVICE PROPERTY, AND DEVICE STABILITY IMPROVEMENT 审中-公开
标题翻译：低温薄膜晶体管工艺，器件性能和器件稳定性改进
公开(公告)号：WO2009129391A3
公开(公告)日：2010-02-18
申请号：PCT/US2009040811
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
发明人： YANG YA-TANG , PARK BEOM SOO , WON TAE KYUNG , CHOI SOO YOUNG , WHITE JOHN M
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
摘要翻译：提供一种用于形成薄膜晶体管的方法和装置。形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。在一些实施例中，第一介电层是富硅的氮化硅层。形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

4. 发明申请

WO2012092020A2 THIN FILM DEPOSITION USING MICROWAVE PLASMA 审中-公开
标题翻译：薄膜沉积使用微波等离子体
公开(公告)号：WO2012092020A2
公开(公告)日：2012-07-05
申请号：PCT/US2011066124
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
发明人： WON TAE KYUNG , NOMINANDA HELINDA , CHO SEON-MEE , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , KUDELA JOZEF
IPC分类号： H01L21/205
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：本发明的实施方案通常提供使用改进的微波辅助CVD室的含硅介电层的沉积工艺。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法通常包括将微波功率施加到耦合到设置在处理室内的微波源的天线，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置为提供覆盖基板整个表面的气体分布覆盖，并将衬底暴露于由气体供给源提供的处理气体产生的微波等离子体中，以在低于约200摄氏度的温度下将含硅层沉积在衬底上，微波等离子体使用约500毫瓦的微波功率 cm 2至约5,000毫瓦/ cm 2，频率约为1GHz至约10GHz。

5. 发明申请

WO2008154446A3 AN APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于沉积均匀硅膜的装置及其制造方法
公开(公告)号：WO2008154446A3
公开(公告)日：2009-02-26
申请号：PCT/US2008066210
申请日：2008-06-06
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
发明人： CHOI SOO YOUNG , WON TAE KYUNG , PARK BEOM SOO , WHITE JOHN M
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

6. 发明申请

WO2009029902A4 PHOTOVOLTAIC PRODUCTION LINE 审中-公开
标题翻译：光伏生产线
公开(公告)号：WO2009029902A4
公开(公告)日：2009-08-06
申请号：PCT/US2008074931
申请日：2008-08-29
申请人： APPLIED MATERIALS INC , BACHRACH ROBERT Z , CHAE YONG-KEE , CHOI SOO YOUNG , DE VRIES NICHOLAS G J , ELGAR YACOV , ENGLHARDT ERIC A , FREI MICHEL R , GAY CHARLES , HAWKINS PARRIS , HO CHOI , HUNTER JAMES CRAIG , KANKANALA PENCHALA N , LI LIWEI , LO WING HOO , LU DANNY CAM TOAN , MEI FANG , MURPHY STEPHEN P , PATEL SRUJAL , SAUNDERS MATTHEW J B , SCHLEZINGER ASAF , SHENG SHURAN , SU TZAY-FA , SULLIVAN JEFFREY S , TANNER DAVID , TROWBRIDGE TERESA , WALKER BRICE , WHITE JOHN M , WON TAE K
发明人： BACHRACH ROBERT Z , CHAE YONG-KEE , CHOI SOO YOUNG , DE VRIES NICHOLAS G J , ELGAR YACOV , ENGLHARDT ERIC A , FREI MICHEL R , GAY CHARLES , HAWKINS PARRIS , HO CHOI , HUNTER JAMES CRAIG , KANKANALA PENCHALA N , LI LIWEI , LO WING HOO , LU DANNY CAM TOAN , MEI FANG , MURPHY STEPHEN P , PATEL SRUJAL , SAUNDERS MATTHEW J B , SCHLEZINGER ASAF , SHENG SHURAN , SU TZAY-FA , SULLIVAN JEFFREY S , TANNER DAVID , TROWBRIDGE TERESA , WALKER BRICE , WHITE JOHN M , WON TAE K
IPC分类号： G06F7/10 , H01L21/4763 , H01L31/075
CPC分类号： H01L21/67236 , B23K26/364 , B26F3/002 , B26F3/004 , B65G49/064 , B65G2249/02 , B65G2249/04 , C03B33/03 , C03B33/033 , H01L21/67132 , H01L21/67712 , H01L21/67715 , H01L21/67721 , H01L21/67727 , H01L21/6776 , H01L31/022425 , H01L31/03921 , H01L31/0504 , H01L31/075 , H02S50/00 , H02S50/10 , Y02E10/548 , Y02P40/57 , Y10T29/49002 , Y10T29/49355 , Y10T29/5196 , Y10T29/53113 , Y10T29/5313 , Y10T29/5317 , Y10T29/53187 , Y10T29/53365 , Y10T29/53417 , Y10T225/10 , Y10T225/325 , Y10T225/329
摘要： The present invention relates to a system that can be used to form a photovoltaic device using processing modules that are adapted to perform steps in the solar cell formation process The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device.
摘要翻译：本发明涉及可用于使用适于在太阳能电池形成过程中执行步骤的处理模块形成光伏器件的系统。自动化太阳能电池制造厂通常是使用的自动化处理模块和自动化设备的布置形成太阳能电池装置。因此，自动化太阳能工厂将通常包括适于接收衬底的衬底接收模块，一个或多个吸收层沉积簇工具，其具有至少一个适于在衬底的表面上沉积含硅层的处理室，一个或多个背接触沉积室，一个或多个材料去除室，太阳能电池封装装置，高压釜模块，自动接线盒附接模块和一个或多个质量保证模块，其适于测试和限定完全形成太阳能电池装置。

7. 发明申请

WO2011008805A3 PROCESSING CHAMBER WITH TRANSLATING WEAR PLATE FOR LIFT PIN 审中-公开
标题翻译：带升降磨损板的升降室
公开(公告)号：WO2011008805A3
公开(公告)日：2011-05-05
申请号：PCT/US2010041895
申请日：2010-07-14
申请人： APPLIED MATERIALS INC , WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
发明人： WHITE JOHN M , OH JEONGHOON , CHO TOM K , JAMES SILJA , PAI UDAY , LOPEZ OSCAR , POLYAK ALEXANDER S
IPC分类号： H01L21/68 , G02F1/13 , H01L21/02 , H01L21/683
CPC分类号： H01L21/68742
摘要： Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
摘要翻译：提供了用于处理包括平移磨损板和/或衬套组件的大面积衬底的方法和装置的实施例，用于减小用于在衬底支撑件上在处理室或其他类型的室中间隔衬底的提升销上的应力。在另一个实施例中，一种用于处理基板的装置包括处理室，该处理室包括设置在室体中的基板支撑件衬套组件设置在衬底支撑件中。升降销穿过套管组件布置。提供磨损板，该磨损板联接到腔体并与升降销对齐。耐磨板可相对于腔室主体的中心线横向移动，以在接触耐磨板时适应提升销的横向运动。

8. 发明申请

WO2010025257A3 SLOTTED TSSL DOOR TO COUPLE O-RING WITH MOVING MATING PART 审中-公开
标题翻译：开槽TSSL门用于连接O形圈与移动部件
公开(公告)号：WO2010025257A3
公开(公告)日：2010-05-20
申请号：PCT/US2009055206
申请日：2009-08-27
申请人： APPLIED MATERIALS INC , BEHDJAT MEHRAN , KURITA SHINICHI , WHITE JOHN M , ANWAR SUHAIL , INAGAWA MAKOTO
发明人： BEHDJAT MEHRAN , KURITA SHINICHI , WHITE JOHN M , ANWAR SUHAIL , INAGAWA MAKOTO
IPC分类号： F16K1/24
CPC分类号： H01L21/67201 , F16K15/147 , F16K51/02 , H01L21/67126
摘要： Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.
摘要翻译：此处公开的实施例总体上涉及用于密封腔室中的开口的狭缝阀门组件。当狭缝阀开口收缩时，压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得在狭缝阀门和腔室之间挤压的O形环可以与狭缝阀门一起移动，室。因此，可能发生较少摩擦O形环在腔室上。摩擦较少时，可能会产生较少的颗粒，并可能延长O型环寿命。由于O形环的使用寿命更长，因此可能会增加基材的产量。

9. 发明申请

WO2010044895A2 MULTIPLE PHASE RF POWER FOR ELECTRODE OF PLASMA CHAMBER 审中-公开
标题翻译：等离子体室电极的多相射频功率
公开(公告)号：WO2010044895A2
公开(公告)日：2010-04-22
申请号：PCT/US2009032776
申请日：2009-01-31
申请人： APPLIED MATERIALS INC , WHITE JOHN M , STIMSON BRADLEY O
发明人： WHITE JOHN M , STIMSON BRADLEY O
IPC分类号： H05H1/36 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32577 , Y10T307/642
摘要： RF power is coupled with different phase offsets to different RF connection points (31- 34) on an electrode (20-26) of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions (for example, X and Y axes) of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply (41-44), wherein each power supply synchronizes its phase to a common reference RF oscillator (70).
摘要翻译： RF功率与不同的相位偏移耦合到等离子体腔室的电极（20-26）上的不同RF连接点（31-34）。优选地，不同的RF连接点的数量和对应的相位偏移至少为四，并且RF连接点的位置沿电极的两个正交维度（例如，X和Y轴）分布。优选地，通过相应的RF电源（41-44）提供到每个相应的RF连接点的电力，其中每个电源将其相位与公共参考RF振荡器（70）同步。

10. 发明申请

WO2009126827A2 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：WO2009126827A2
公开(公告)日：2009-10-15
申请号：PCT/US2009040105
申请日：2009-04-09
申请人： APPLIED MATERIALS INC , FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
发明人： FURUTA GAKU , CHOI YOUNG-JIN , CHOI SOO YOUNG , PARK BEOM SOO , WHITE JOHN M , ANWAR SUHAIL , TINER ROBIN L
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/45565 , C23C16/45572 , C23C16/5096 , H01J37/32091 , H01J37/32357 , H01J37/3244
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

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