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1. 发明申请

WO2006121600B1 PROCESS AND COMPOSITION FOR CONDUCTIVE MATERIAL REMOVAL BY ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：通过电化学机械抛光去除导电材料的工艺和组成
公开(公告)号：WO2006121600B1
公开(公告)日：2007-02-08
申请号：PCT/US2006015386
申请日：2006-04-25
申请人： APPLIED MATERIALS INC , WANG ZHIHONG , WANG YOU , MAO DAXIN , JIA RENHE , TSAI STAN D , HU YONGQI , TIAN YUAN A , CHEN LIANG-YUH
发明人： WANG ZHIHONG , WANG YOU , MAO DAXIN , JIA RENHE , TSAI STAN D , HU YONGQI , TIAN YUAN A , CHEN LIANG-YUH
IPC分类号： C25F3/02 , B23H3/08 , B23H5/08 , C09G1/02 , H01L21/321 , H01L21/768
CPC分类号： C25F3/02 , B23H5/08 , C09G1/02 , H01L21/32125 , H01L21/7684
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

2. 发明申请

WO2006121600A3 PROCESS AND COMPOSITION FOR CONDUCTIVE MATERIAL REMOVAL BY ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光去除导电材料的工艺和组成
公开(公告)号：WO2006121600A3
公开(公告)日：2007-01-04
申请号：PCT/US2006015386
申请日：2006-04-25
申请人： APPLIED MATERIALS INC , WANG ZHIHONG , WANG YOU , MAO DAXIN , JIA RENHE , TSAI STAN D , HU YONGQI , TIAN YUAN A , CHEN LIANG-YUH
发明人： WANG ZHIHONG , WANG YOU , MAO DAXIN , JIA RENHE , TSAI STAN D , HU YONGQI , TIAN YUAN A , CHEN LIANG-YUH
IPC分类号： C25F3/02 , B23H3/08 , B23H5/08 , C09G1/02 , H01L21/321 , H01L21/768
CPC分类号： C25F3/02 , B23H5/08 , C09G1/02 , H01L21/32125 , H01L21/7684
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了用于处理其上设置有导电材料层的基材的组合物，该组合物包含酸性电解质，螯合剂，腐蚀抑制剂，钝化聚合物材料，pH调节剂，溶剂和 pH在约3和约10之间。该组合物用于在导电材料层上形成钝化层，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及除去导电材料层。

3. 发明申请

WO2007047454A3 PROCESS AND COMPOSITION FOR ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光的工艺与组成
公开(公告)号：WO2007047454A3
公开(公告)日：2008-01-17
申请号：PCT/US2006040123
申请日：2006-10-13
申请人： APPLIED MATERIALS INC , LIU FENG Q , DU TIANBAO , DUBOUST ALAIN , HSU WEI-YUNG , ZHAO JUNZI , EWALD ROBERT A , TIAN YUAN A , JIA RENHE , WANG YOU , WANG ZHIHONG , DIAO JIE , MAO DAXIN , TSAI STAN D , KARUPPIAH LAKSH , CHEN LIANG-YUH
发明人： LIU FENG Q , DU TIANBAO , DUBOUST ALAIN , HSU WEI-YUNG , ZHAO JUNZI , EWALD ROBERT A , TIAN YUAN A , JIA RENHE , WANG YOU , WANG ZHIHONG , DIAO JIE , MAO DAXIN , TSAI STAN D , KARUPPIAH LAKSH , CHEN LIANG-YUH
IPC分类号： H01L21/461 , C09K13/00 , H01L21/31 , H01L21/469
CPC分类号： C25F3/02 , B23H5/08
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

4. 发明申请

WO2006031366A3 FULL SEQUENCE METAL AND BARRIER LAYER ELECTROCHEMICAL MECHANICAL PROCESSING 审中-公开
标题翻译：全序列金属和障碍层电化学机械加工
公开(公告)号：WO2006031366A3
公开(公告)日：2006-06-29
申请号：PCT/US2005029357
申请日：2005-08-18
申请人： APPLIED MATERIALS INC , MAO DAXIN , JIA RENHE , WANG ZHIHONG , TIAN YUAN , LIU FENG Q , GALBURT VLADIMIR , KO SEN HOU , TSAI STAN D , CHEN LIANG-YUH , HU YONGQI
发明人： MAO DAXIN , JIA RENHE , WANG ZHIHONG , TIAN YUAN , LIU FENG Q , GALBURT VLADIMIR , KO SEN HOU , TSAI STAN D , CHEN LIANG-YUH , HU YONGQI
IPC分类号： B23H5/06 , B23H5/08 , B24B37/04 , H01L21/321 , H01L21/768
CPC分类号： H01L21/7684 , B23H5/06 , B23H5/08 , H01L21/32125
摘要： A method for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly with a force less than about 2 psi, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.
摘要翻译：提供了一种用于电化学处理金属和阻隔材料的方法。在一个实施例中，一种用于电化学处理衬底的方法包括以下步骤：在衬底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，将衬底压在处理垫组件上，在约2psi之间提供与衬底和衬垫组件接触的运动，并在屏障处理站中的第一电化学处理步骤期间电化学去除暴露层的一部分。

5. 发明申请

WO2006081589A3 TUNGSTEN ELECTROPROCESSING 审中-公开
标题翻译：钨电镀
公开(公告)号：WO2006081589A3
公开(公告)日：2006-11-23
申请号：PCT/US2006004873
申请日：2006-01-27
申请人： APPLIED MATERIALS INC , JIA RENHE , WANG ZHIHONG , TIAN YUAN , TRAN HUYEN KAREN , MAO DAXIN , TSAI STAN D , KARUPPIAH LAKSH , CHEN LIANG-YUH
发明人： JIA RENHE , WANG ZHIHONG , TIAN YUAN , TRAN HUYEN KAREN , MAO DAXIN , TSAI STAN D , KARUPPIAH LAKSH , CHEN LIANG-YUH
IPC分类号： B24B37/04
CPC分类号： B23H5/08 , B24B37/042 , C25F3/08
摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.
摘要翻译：提供了抛光钨的方法。在ECMP期间，增加到焊盘的电压并不总是足以提高抛光速率。抛光钨时，仅仅增加施加的电压在某些情况下会实际降低去除速率。通过增加抛光垫与基底之间的向下的压力，施加的电压以及基底和抛光垫的旋转速度，钨的移除速率也将增加。

6. 发明申请

WO2007111729A2 AN APPARATUS AND A METHOD FOR ELECTROCHEMICAL MECHANICAL PROCESSING WITH FLUID FLOW ASSIST ELEMENTS 审中-公开
标题翻译：一种用流体流动辅助元件进行电化学机械加工的装置和方法
公开(公告)号：WO2007111729A2
公开(公告)日：2007-10-04
申请号：PCT/US2006061748
申请日：2006-12-07
申请人： APPLIED MATERIALS INC , WANG YOU , JIA RENHE , TSAI STAN D , HU YONGQI , WANG ZHIHONG , DIAO JIE , ALONZO GERALD JOHN , KARUPPIAH LAKSHMANAN
发明人： WANG YOU , JIA RENHE , TSAI STAN D , HU YONGQI , WANG ZHIHONG , DIAO JIE , ALONZO GERALD JOHN , KARUPPIAH LAKSHMANAN
IPC分类号： H05K5/00 , H05K3/10
CPC分类号： B23H5/08 , C25F7/00
摘要： An apparatus and a method with fluid flow assist elements for electrochemical mechanical processing is provided in this invention. In one embodiment, the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a second conductive layer disposed below the first conductive layer, an isolation layer disposed between the conductive layers, and a plurality of apertures, each having a first end formed through the first conductive layer and a second end formed through the second conductive layer, wherein the second ends of at least two apertures are laterally coupled by a channel.
摘要翻译：本发明提供了一种具有用于电化学机械加工的流体流动辅助元件的装置和方法。在一个实施例中，该装置包括具有适于接触基板的上表面的第一导电层，设置在第一导电层下方的第二导电层，设置在导电层之间的隔离层和多个孔，每个孔具有通过第一导电层形成的第一端和通过第二导电层形成的第二端，其中至少两个孔的第二端通过沟道横向耦合。

7. 发明申请

WO2012054263A3 MULTIPLE MATCHING REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING 审中-公开
标题翻译：用于原位光学监测的多重匹配参考光谱
公开(公告)号：WO2012054263A3
公开(公告)日：2012-06-28
申请号：PCT/US2011055814
申请日：2011-10-11
申请人： APPLIED MATERIALS INC , ZHANG JIMIN , WANG ZHIHONG , LEE HARRY Q , TU WEN-CHIANG
发明人： ZHANG JIMIN , WANG ZHIHONG , LEE HARRY Q , TU WEN-CHIANG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B49/12
摘要： A method of controlling polishing includes storing a plurality libraries, each library including a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching first reference spectrum from a first library from the plurality of libraries and finding a best matching second reference spectrum from a different second library from the plurality of libraries, determining a first value associated with the best matching first reference spectrum and determining a second value from the best matching second reference spectrum, and calculating a third value from the first value and the second value to generate a sequence of calculated third values. At least one of a polishing endpoint or an adjustment for a polishing rate can be determined based on the sequence of calculated third values.
摘要翻译：控制抛光的方法包括存储多个库，每个库包括多个参考光谱，抛光衬底，在抛光期间测量来自衬底的光的光谱序列，并且对于光谱序列的每个测量光谱，找到最佳匹配来自所述多个库中的第一库的第一参考谱，并且从所述多个库中的不同第二库找到最佳匹配的第二参考谱，确定与所述最佳匹配的第一参考谱相关联的第一值，以及确定第二值从最佳匹配的第二参考频谱中计算第三值，并且从第一值和第二值计算第三值以生成计算的第三值的序列。基于所计算的第三值的顺序，可以确定抛光终点或抛光速率的调整中的至少一个。

8. 发明申请

WO2012019040A3 SPECTROGRAPHIC MONITORING USING INDEX TRACKING AFTER DETECTION OF LAYER CLEARING 审中-公开
标题翻译：在检测到分层后，使用索引跟踪进行光谱监测
公开(公告)号：WO2012019040A3
公开(公告)日：2012-05-10
申请号：PCT/US2011046642
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , ZHANG JIMIN , WANG ZHIHONG , LEE HARRY Q , TU WEN-CHIANG
发明人： ZHANG JIMIN , WANG ZHIHONG , LEE HARRY Q , TU WEN-CHIANG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/042 , B24B37/013 , B24B49/12
摘要： A method of controlling polishing includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, polishing a substrate having a second layer overlying a first layer, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, detecting exposure of the first layer, fitting a function to a portion of the sequence of index values corresponding to spectra measured after detection of exposure of the first layer, and determining a polishing endpoint or an adjustment for a polishing rate based on the function.
摘要翻译：控制抛光的方法包括存储具有多个参考光谱的库，所述多个参考光谱中的每个参考光谱具有存储的相关索引值，抛光具有覆盖第一层的第二层的衬底，测量光谱序列对抛光期间来自衬底的光，针对光谱序列的每个测量光谱，找到最佳匹配参考光谱以生成最佳匹配参考光谱的序列，从最佳匹配参考序列中确定每个最佳匹配光谱的相关索引值光谱以生成一系列索引值，检测第一层的曝光，将功能拟合至与在检测到第一层的曝光之后测量的光谱相对应的索引值序列的一部分，以及确定抛光终点或基于功能的抛光速率。

9. 发明申请

WO2012030475A4 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光相同板上变化厚度的多个基板的端点控制
公开(公告)号：WO2012030475A4
公开(公告)日：2012-08-16
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异是使用在线计量站测量的第一预稀释厚度和第二预抛光厚度来确定的。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差异来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少的预期需要的抛光时间，同时对第一基板和第二基板中的哪一个施加压力，则不施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

10. 发明申请

WO2012030475A3 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中同一厚度多种基材厚度的终点控制
公开(公告)号：WO2012030475A3
公开(公告)日：2012-07-05
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：使用在线测量台处测量的第一预抛光厚度和第二预抛光厚度来确定第一基板的第一预期所需抛光时间与第二基板的第二预期所需抛光时间之间的差异。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力预计需要更长的抛光时间。在初始阶段之后，对第一基板和第二基板施加压力。

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