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1. 发明申请

WO2014018027A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2014018027A1
公开(公告)日：2014-01-30
申请号：PCT/US2012/048050
申请日：2012-07-25
申请人： APPLIED MATERIALS, INC. , XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
发明人： XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
IPC分类号： H01L21/304
CPC分类号： B24B37/015 , H01L21/3212
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除一部分导电材料，在抛光过程中重复地监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

2. 发明申请

WO2012030475A4 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光相同板上变化厚度的多个基板的端点控制
公开(公告)号：WO2012030475A4
公开(公告)日：2012-08-16
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异是使用在线计量站测量的第一预稀释厚度和第二预抛光厚度来确定的。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差异来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少的预期需要的抛光时间，同时对第一基板和第二基板中的哪一个施加压力，则不施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

3. 发明申请

WO2012030475A3 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中同一厚度多种基材厚度的终点控制
公开(公告)号：WO2012030475A3
公开(公告)日：2012-07-05
申请号：PCT/US2011046660
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
发明人： DUBOUST ALAIN , JEW STEPHEN , MAI DAVID H , TRAN HUYEN , TU WEN-CHIANG , SHEN SHIH-HAUR , ZHANG JIMIN , CARLSSON INGEMAR , SWEDEK BOGUSLAW A , WANG ZHIHONG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：使用在线测量台处测量的第一预抛光厚度和第二预抛光厚度来确定第一基板的第一预期所需抛光时间与第二基板的第二预期所需抛光时间之间的差异。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力预计需要更长的抛光时间。在初始阶段之后，对第一基板和第二基板施加压力。

4. 发明申请

WO2011152958A2 TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION 审中-公开
标题翻译：多功能抛光站多台车头抛光工艺的调试
公开(公告)号：WO2011152958A2
公开(公告)日：2011-12-08
申请号：PCT/US2011035631
申请日：2011-05-06
申请人： APPLIED MATERIALS INC , MAI DAVID H , JEW STEPHEN , HU XIAOYUAN
发明人： MAI DAVID H , JEW STEPHEN , HU XIAOYUAN
IPC分类号： H01L21/304
CPC分类号： B24B37/042
摘要： An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head.
摘要翻译：描述了在多个载体头中的一个或多个中没有设置基板时，模拟在每个压板站的多个载体头中被抛光的基板的装置和方法。在一个实施例中，用于处理衬底的方法包括向抛光站提供单个衬底，所述抛光站适于使用至少第一载体头和第二载体头在单个抛光垫上处理多个衬底，将单个衬底保持在第一载体头，而第二载体头保持无基材，将第一载体头和第二载体头推向抛光垫的抛光表面; 以及在所述抛光垫和所述第一承载头之间提供相对运动。

5. 发明申请

WO2011152958A3 TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION 审中-公开
公开(公告)号：WO2011152958A3
公开(公告)日：2011-12-08
申请号：PCT/US2011/035631
申请日：2011-05-06
申请人： APPLIED MATERIALS, INC. , MAI, David, H. , JEW, Stephen , HU, Xiaoyuan
发明人： MAI, David, H. , JEW, Stephen , HU, Xiaoyuan
IPC分类号： H01L21/304
摘要： An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head.

6. 发明申请

WO2012030475A2 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中同一厚度多种基材厚度的终点控制
公开(公告)号：WO2012030475A2
公开(公告)日：2012-03-08
申请号：PCT/US2011/046660
申请日：2011-08-04
申请人： APPLIED MATERIALS, INC. , DUBOUST, Alain , JEW, Stephen , MAI, David H. , TRAN, Huyen , TU, Wen-Chiang , SHEN, Shih-Haur , ZHANG, Jimin , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , WANG, Zhihong
发明人： DUBOUST, Alain , JEW, Stephen , MAI, David H. , TRAN, Huyen , TU, Wen-Chiang , SHEN, Shih-Haur , ZHANG, Jimin , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , WANG, Zhihong
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一基材的第一预期所需抛光时间与第二基材的第二预期所需抛光时间之间的差异是使用第一预先抛光厚度和第二预抛光厚度测量的，在线计量站。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力预计需要更长的抛光时间。在初始阶段之后，对第一基板和第二基板施加压力。

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