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1. 发明申请

WO2010022212A3 SURFACE TREATED ALUMINUM NITRIDE BAFFLE 审中-公开
标题翻译：表面处理的硝酸铝
公开(公告)号：WO2010022212A3
公开(公告)日：2010-05-14
申请号：PCT/US2009054416
申请日：2009-08-20
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , LUBOMIRSKY DMITRY
发明人： RASHEED MUHAMMAD M , LUBOMIRSKY DMITRY
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译：本文提供了与氮化铝挡板相关的方法和装置。在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于身体。在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。在一些实施例中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，该主体具有设置在其表面上的多余的金属氧化物粘合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

2. 发明申请

WO2009131889A2 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译：用于指导固化的方法和设备
公开(公告)号：WO2009131889A2
公开(公告)日：2009-10-29
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的设备。该设备包括具有壳体壁的壳体。电极配置在壳体内。管状体围绕电极。管状体包括外壁和内壁。至少一种惰性气体位于外壁和内壁之间，其中外壳壁和电极被配置为激发惰性气体以照射准分子光以固化。

3. 发明申请

WO2009132181A3 LOW PROFILE PROCESS KIT 审中-公开
标题翻译：低配置工艺包
公开(公告)号：WO2009132181A3
公开(公告)日：2010-02-18
申请号：PCT/US2009041528
申请日：2009-04-23
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
发明人： RASHEED MUHAMMAD M , IWASHITA TERUKI , OTAKE HIROSHI , KOGA YUKI , MAEHARA KAZUTOSHI , CHEN XINGLONG , GONDHALEKAR SUDHIR , LUBOMIRSKY DMITRY
IPC分类号： H01L21/683 , H01L21/687
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in a radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理腔的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理室的处理套件包括具有内边缘和外边缘的环形体，并且具有上表面和下表面，所述上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

4. 发明申请

WO2009131889A9 METHOD AND APPARATUS FOR EXCIMER CURING 审中-公开
标题翻译： EXCIMER固化的方法和装置
公开(公告)号：WO2009131889A9
公开(公告)日：2009-12-30
申请号：PCT/US2009040809
申请日：2009-04-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
发明人： LUBOMIRSKY DMITRY , RASHEED MUHAMMAD M , YIEH ELLIE Y
IPC分类号： H01L21/324 , H01L21/205
CPC分类号： H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要： An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译：提供了一种用于产生准分子辐射的装置。该装置包括具有壳体壁的壳体。电极配置在外壳内。管状体在电极周围。管体包括外壁和内壁。至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

5. 发明申请

WO2007140421A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A9
公开(公告)日：2008-12-31
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201).
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体。

6. 发明申请

WO2007140426A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A3
公开(公告)日：2008-12-11
申请号：PCT/US2007070001
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201), a substrate stage in the deposition chamber (201) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising a dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201). An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber (201) from the dielectric precursors supplied to the deposition chamber (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前体分配系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。还可以包括原位等离子体产生系统，以从沉积室（201）中提供的电介质前体在沉积室（201）中产生等离子体，

7. 发明申请

WO2007140421A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A3
公开(公告)日：2008-10-30
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体，

8. 发明申请

WO2007140425A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质填料工艺室
公开(公告)号：WO2007140425A9
公开(公告)日：2008-03-27
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了由电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，在沉积室中的衬底台以保持衬底，以及耦合到沉积室的远程等离子体产生系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以定位在基板台上方并且侧入口可以径向分布在基板台周围。反应性自由基前体可以通过顶部入口供应到沉积室。还可以包括原位等离子体发生系统以从供应到沉积室的电介质前体在沉积室中产生等离子体。

9. 发明申请

WO2011159905A3 LOADLOCK BATCH OZONE CURE 审中-公开
公开(公告)号：WO2011159905A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040713
申请日：2011-06-16
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/677 , H01L21/02
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

10. 发明申请

WO2012048044A2 MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 审中-公开
标题翻译：臭氧固化和固化后水分处理模块
公开(公告)号：WO2012048044A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054984
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/68
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and a first robotic arm operable to move a substrate between one of the deposition chambers and a load-lock substrate holding area. The system may also have a second robotic arm operable to move the substrate between the load-lock substrate holding area and a curing chamber of a substrate curing and treatment module. The substrate curing and treatment module is attached to the load- lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The curing chamber may be vertically positioned with respect to the treatment chamber. The module may also include a heating system operatively coupled to the curing chamber and the treatment chamber, where the heating system is operative to adjust a first temperature of the curing chamber to from about 150°C to about 200°C, and to adjust a second temperature of the treatment chamber to from about 80°C to about 100°C. The module may still further include an access door on both the curing chamber and the treatment chamber. Each of the access doors are operable to be moved to an open position to receive a substrate, and operable to be moved to a closed sealed position during while the substrate is being cured or treated.
摘要翻译：一种具有多个沉积室的基板处理系统，以及可操作以在沉积室之一与负载锁定基板保持区域之间移动基板的第一机器人臂。该系统还可以具有第二机器人臂，该第二机器人臂可操作以在加载锁定衬底保持区域和衬底固化和处理模块的固化室之间移动衬底。基板固化和处理模块附接到负载锁定基板保持区域，并且可以包括：用于在包含臭氧的气氛中固化介电层的固化室和用于在包含水的气氛中处理固化的介电层的处理室汽。固化室可以相对于处理室垂直定位。模块还可以包括可操作地连接到固化室和处理室的加热系统，其中加热系统可操作以将固化室的第一温度调节到从大约150℃到大约200℃，并且调节处理室的第二温度从约80℃至约100℃。该模块还可以在固化室和处理室两者上包括通道门。每个入口门可操作地移动到打开位置以接收基底，并且可操作以在基底正在固化或处理期间移动到封闭的密封位置。

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