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1. 发明申请

WO2007140426A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A9
公开(公告)日：2008-10-23
申请号：PCT/US2007070001
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

2. 发明申请

WO2007140425A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140425A3
公开(公告)日：2008-02-14
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以位于衬底台的上方，并且侧入口可以在衬底台周围径向分布。反应性自由基前体可以通过顶部入口提供给沉积室。还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

3. 发明申请

WO2007140421A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A9
公开(公告)日：2008-12-31
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201).
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体。

4. 发明申请

WO2007140426A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140426A3
公开(公告)日：2008-12-11
申请号：PCT/US2007070001
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/45574 , C23C16/505
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201), a substrate stage in the deposition chamber (201) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising a dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201). An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber (201) from the dielectric precursors supplied to the deposition chamber (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前体分配系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。还可以包括原位等离子体产生系统，以从沉积室（201）中提供的电介质前体在沉积室（201）中产生等离子体，

5. 发明申请

WO2007140421A3 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质加工室
公开(公告)号：WO2007140421A3
公开(公告)日：2008-10-30
申请号：PCT/US2007069996
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： C23F1/00 , C23C16/22 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/46 , C23C16/48 , C23C16/52 , H01L21/306
CPC分类号： C23C16/46 , C23C16/452 , C23C16/45565 , C23C16/45574 , H01L21/67115
摘要： A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201)
摘要翻译：描述了从电介质前体的等离子体在衬底上形成电介质层的系统（100）。系统（100）可以包括沉积室（201），沉积室（201）中的用于保持基板的基板台和耦合到沉积室（201）的等离子体生成系统，其中等离子体产生系统是用于产生具有一个或多个反应性基团的电介质前体。系统（100）还可以包括前置分布系统（700），其包括位于衬底台上方的双通道喷头（700）。喷头（700）可以具有带有第一组开口（804）的面板（802），反应性基团前体通过该开口进入沉积室（201），第二组开口（806）通过第二组开口进入沉积室（201）。可以包括原位等离子体产生系统以在从沉积腔（201）提供的电介质前体在沉积室（201）中产生等离子体，

6. 发明申请

WO2007140425A9 PROCESS CHAMBER FOR DIELECTRIC GAPFILL 审中-公开
标题翻译：电介质填料工艺室
公开(公告)号：WO2007140425A9
公开(公告)日：2008-03-27
申请号：PCT/US2007070000
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
发明人： LUBOMIRSKY DMITRY , LIANG QIWEI , PARK SOONAM , CHUC KIEN N , YIEH ELLIE
IPC分类号： H01L21/76
CPC分类号： C23C16/509 , C23C16/401 , C23C16/452 , C23C16/45514 , C23C16/45574 , C23C16/45576 , C23C16/45578 , C23C16/4584 , H01J37/32357 , H01J37/3244 , H01J37/32752 , H01J2237/2001
摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
摘要翻译：描述了由电介质前体的等离子体在衬底上形成电介质层的系统。该系统可以包括沉积室，在沉积室中的衬底台以保持衬底，以及耦合到沉积室的远程等离子体产生系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体。该系统还可以包括前体分配系统，其包括至少一个顶部入口和多个侧入口。顶部入口可以定位在基板台上方并且侧入口可以径向分布在基板台周围。反应性自由基前体可以通过顶部入口供应到沉积室。还可以包括原位等离子体发生系统以从供应到沉积室的电介质前体在沉积室中产生等离子体。

7. 发明申请

WO2011009002A2 FLOW CONTROL FEATURES OF CVD CHAMBERS 审中-公开
标题翻译：化学气相沉积室的流动控制特性
公开(公告)号：WO2011009002A2
公开(公告)日：2011-01-20
申请号：PCT/US2010042194
申请日：2010-07-15
申请人： APPLIED MATERIALS INC , CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
发明人： CHUC KIEN N , LIANG QIWEI , NGUYEN HANH D , CHEN XINGLONG , MILLER MATTHEW , PARK SOONAM , TRAN TOAN Q , KHAN ADIB , YANG JANG-GYOO , LUBOMIRSKY DMITRY , VENKATARAMAN SHANKAR
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/452 , C23C16/45574 , H01J37/3244 , H01J37/32449 , Y10T137/85938
摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.
摘要翻译：提供了用于气体分配组件的设备和方法。在一个方面中，提供了一种气体分配组件，其包括环形主体，该环形主体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部以及形成的座进入内部环形壁，位于上部凹部中的上部板，其包括具有穿过其形成的多个第一孔的盘形主体以及定位在该底座上的底板，该底部板包括盘形主体，该盘形主体具有多个第二形成在其中的与第一孔对齐的孔，以及形成在第二孔与底板之间的多个第三孔，底板密封地联接到上板，以将多个第一孔和第二孔与多个第三孔。

8. 发明申请

WO2012099681A3 SEMICONDUCTOR PROCESSING SYSTEM AND METHODS USING CAPACITIVELY COUPLED PLASMA 审中-公开
标题翻译：半导体处理系统和使用电容耦合等离子体的方法
公开(公告)号：WO2012099681A3
公开(公告)日：2012-09-13
申请号：PCT/US2011066281
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , YANG JANG-GYOO , MILLER MATTHEW L , CHEN XINGLONG , CHUC KIEN N , LIANG QIWEI , VENKATARAMAN SHANKAR , LUBOMIRSKY DMITRY
发明人： YANG JANG-GYOO , MILLER MATTHEW L , CHEN XINGLONG , CHUC KIEN N , LIANG QIWEI , VENKATARAMAN SHANKAR , LUBOMIRSKY DMITRY
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H05H1/24 , C23C16/45565 , C23C16/45585 , H01J37/32091 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01L21/02274
摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
摘要翻译：描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括在第一电极和第二电极之间形成的等离子体激发区。第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括第二多个开口以允许活化气体离开等离子体激发区域。该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口以及可操作以支撑基底的基座。底座位于气体反应区下方，活化气体从CCP单元流入。

9. 发明申请

WO2012093983A3 REMOTE PLASMA SOURCE SEASONING 审中-公开
标题翻译：远程等离子体源头季节
公开(公告)号：WO2012093983A3
公开(公告)日：2012-10-04
申请号：PCT/US2010045938
申请日：2010-08-18
申请人： APPLIED MATERIALS INC , PARK SOONAM , JEON SOO , TRAN TOAN Q , YANG JANG-GYOO , LIANG QIWEI , LUBOMIRSKY DMITRY
发明人： PARK SOONAM , JEON SOO , TRAN TOAN Q , YANG JANG-GYOO , LIANG QIWEI , LUBOMIRSKY DMITRY
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/4404 , C23C16/401 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y10S438/905
摘要： Methods of seasoning a remote plasma system are described. The methods include the steps of flowing a silicon-containing precursor into a remote plasma region to deposit a silicon containing film on an interior surface of the remote plasma system. The methods reduce reactions with the seasoned walls during deposition processes, resulting in improved deposition rate, improved deposition uniformity and reduced defectivity during subsequent deposition.
摘要翻译：描述了调制远程等离子体系统的方法。这些方法包括将含硅前体流入远程等离子体区域以将含硅膜沉积在远程等离子体系统的内表面上的步骤。该方法在沉积过程中减少了与经调节的壁的反应，从而提高了沉积速率，改善了沉积均匀性，并降低了后续沉积时的缺陷率。

10. 发明申请

WO2011062755A3 PLASMA SOURCE DESIGN 审中-公开
标题翻译：等离子源设计
公开(公告)号：WO2011062755A3
公开(公告)日：2011-09-15
申请号：PCT/US2010055077
申请日：2010-11-02
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , YANG JANG-GYOO , MILLER MATTHEW L , PINSON JAY D III , CHUC KIEN N , VENKATARMAN SHANKAR
发明人： LUBOMIRSKY DMITRY , YANG JANG-GYOO , MILLER MATTHEW L , PINSON JAY D III , CHUC KIEN N , VENKATARMAN SHANKAR
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32357
摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.
摘要翻译：本发明的实施例通常提供一种等离子体源装置及其使用方法，其能够通过使用电磁能量在对称地定位在磁芯元件周围的等离子体产生区域中产生自由基和/或气体离子资源。通常，等离子体生成区域和磁芯的取向和形状允许将所递送的电磁能量有效且均匀地耦合到设置在等离子体生成区域中的气体。通常，在等离子体生成区域中形成的等离子体的改善的特性能够改善在设置在等离子体生成区域下游的衬底或处理室的一部分上执行的沉积，蚀刻和/或清洁处理。

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