会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • METHODS AND APPARATUS FOR ELECTROPROCESSING WITH RECESSED BIAS CONTACT
    • 具有凹陷接触的电子加工方法和装置
    • WO2007109432A3
    • 2007-11-29
    • PCT/US2007063579
    • 2007-03-08
    • APPLIED MATERIALS INCWANG YANHSU WEI-YUNGDUBOUST ALAINMANENS ANTOINE P
    • WANG YANHSU WEI-YUNGDUBOUST ALAINMANENS ANTOINE P
    • H01L21/44
    • B23H5/08B24B37/046B24B37/20C25D17/10C25F7/00
    • A method and apparatus are provided for electroprocessing with recessed bias contact. In one embodiment, the apparatus includes a platen, a processing pad disposed on the platen and having at least a first aperture and a second aperture formed therethrough, a first electrode positioned under the processing pad and exposed to a polishing surface of the processing pad through the first aperture, wherein an upper surface of the first electrode is recessed from the polishing surface; a plurality of second electrodes exposed to the polishing surface through the second aperture, wherein upper surfaces of the second electrodes are recessed from the polishing surface, and an electrical circuit coupled to the first and second electrodes and configured to bias each of the second electrodes independently relative to the first electrode.
    • 提供了用于具有凹入式偏置接触的电处理的方法和设备。 在一个实施例中,该设备包括台板,设置在台板上并且至少具有穿过其形成的第一孔和第二孔的加工垫,位于加工垫下方并且通过加工垫的抛光表面暴露的第一电极 所述第一孔口,其中所述第一电极的上表面从所述抛光表面凹陷; 多个第二电极,所述多个第二电极通过所述第二孔暴露于所述抛光表面,其中所述第二电极的上表面从所述抛光表面凹入;以及电路,所述电路耦合至所述第一电极和所述第二电极并且被配置为独立地偏压所述第二电极 相对于第一电极。