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    • 1. 发明申请
    • WAFER PIN CHUCK FABRICATION AND REPAIR
    • WAFER PIN CHUCK制造和维修
    • WO2016081951A1
    • 2016-05-26
    • PCT/US2015/062231
    • 2015-11-23
    • M CUBED TECHNOLOGIES
    • GRATRIX, Edward
    • G03F7/20H01L21/687
    • H01L21/6875B24B37/042B24B37/14B24B37/16G03F7/707G03F7/70783H01L21/6838H01L21/68757
    • In a wafer chuck design featuring pins or "mesas" making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.
    • 在具有构成支撑表面的销或“台面”的晶片卡盘设计中,将引脚设计成具有环形形状,或者包含孔或凹坑,最小化晶片的粘附,并且改善晶片沉降。 本发明的另一方面是用于赋予或恢复诸如晶片卡盘的支撑表面的表面的平坦度和粗糙度的工具和方法。 该工具被成形为使得与被处理的表面的接触是圆形或环形。 处理方法可以在专用设备中进行,或者在半导体制造设备中进行。 该工具小于晶片销卡盘的直径,并且可以近似于待研磨的高点的空间频率。 工具相对于支撑表面的移动使得支撑表面的所有区域可以由工具来处理,或者仅仅是需要校正的区域。
    • 4. 发明申请
    • AN APPARATUS FOR AND METHOD OF POLISHING A SEMICONDUCTOR WAFER USING CHEMICAL MECHANICAL PLANARIZATION
    • 利用化学机械平面抛光抛光半导体晶片的装置和方法
    • WO2008023288A8
    • 2008-11-27
    • PCT/IB2007051402
    • 2007-04-19
    • O'DEA EOIN
    • O'DEA EOIN
    • B24B37/04
    • B24B37/04B24B21/04B24B37/16
    • An apparatus for polishing a substrate surface such as a semiconductor wafer or the like by Chemical Mechanical Planarization (CMP) comprises a rotatable wafer platen which is held against a conical body having a polishing pad which contacts the wafer along tangential length of the curved surface of the conical body. The polishing pad is optionally a belt tensioned over the conical body or a conical pad securely mounted to the conical body. The apparatus includes a housing or process vessel to encapsulate substantially the process interface region, particulary where a chemical slurry is used in the polishing media. A method of polishing a substrate, such as a semiconductor wafer, is also disclosed. The method optionally includes immersion of the process interface in polishing media.a
    • 通过化学机械平坦化(CMP)抛光诸如半导体晶片等的衬底表面的设备包括可旋转的晶片台板,该晶片台板抵靠具有抛光垫的圆锥体保持,该抛光垫沿着弯曲表面的切向长度 圆锥形的身体。 抛光垫可选地是张紧在锥形体上的皮带或固定安装在锥形体上的锥形垫。 该设备包括壳体或处理容器以基本上密封处理界面区域,特别是在抛光介质中使用化学浆料的地方。 还公开了抛光诸如半导体晶片的衬底的方法。 该方法可选地包括将处理界面浸入抛光介质中.a
    • 7. 发明申请
    • INTEGRATED PLATEN ASSEMBLY FOR A CHEMICAL MECHANICAL PLANARIZATION SYSTEM
    • 支持抛光网的方法和装置
    • WO2003016070A2
    • 2003-02-27
    • PCT/US2002/025665
    • 2002-08-12
    • APPLIED MATERIALS, INC.
    • FRANKLIN, Timothy, J.MAROHL, Dan, A.
    • B42B
    • B24B37/16B24B9/10B24B21/04B24B21/20
    • Generally, a method and apparatus for supporting a web of polishing material. In one embodiment, the apparatus includes a platen and a blocker valve. The platen includes a support surface adapted to support the polishing material and a port fluidly coupled to the support surface. A housing that includes a supply port and an exit port has a venturi body disposed therein. The blocker valve has a first state whereby a flow through the housing and blocker valve causes vacuum to be drawn through the port disposed in the platen by the venturi body. In another embodiment, the flow through the venturi may be reversed by changing the state of the blocker valve to blow air through the port disposed in the platen, thereby placing the polishing material and the support surface of the platen in a spaced-apart relation.
    • 通常,用于支撑抛光材料的网状物的方法和装置102.在一个实施例中,该装置包括压板230和阻塞阀314.压板包括适于支撑抛光材料的支撑表面和流体耦合到 支撑面。 包括供给口304和出口306的壳体具有设置在其中的文丘里管本体310。 阻塞阀具有第一状态,由此通过壳体和阻塞阀的流动导致真空通过文丘里管体设置在压板中的端口被抽吸。 在另一个实施例中,可以通过改变阻塞阀的状态来改变通过文丘里管310的流动,从而通过布置在压板中的端口284吹送空气,从而将抛光材料和压板的支撑表面放置在间隔开的位置 关系。
    • 10. 发明申请
    • 研磨パッド
    • 抛光垫
    • WO2013011921A1
    • 2013-01-24
    • PCT/JP2012/067835
    • 2012-07-12
    • 東レ株式会社竹内 奈々福田 誠司奥田 良治
    • 竹内 奈々福田 誠司奥田 良治
    • B24B37/26H01L21/304
    • B24B37/26B24B37/16B24D11/00
    •  研磨パッドは、少なくとも研磨層を有する研磨パッドであって、前記研磨層は研磨面に側面を有する溝を備え、前記側面の少なくとも一方は、前記研磨面から連続し、前記研磨面とのなす角度がαである第1の側面、および該第1の側面から連続し、前記研磨面と平行な面とのなす角度がβである第2の側面から構成され、前記研磨面とのなす角度αは95度より大きく、前記研磨面と平行な面とのなす角度βは95度より大きく、かつ、前記研磨面と平行な面とのなす角度βが前記研磨面とのなす角度αよりも小さいものであり、前記研磨面から前記第1の側面と前記第2の側面の屈曲点までの屈曲点深さが0.2mmより大きく、3.0mm以下であることを特徴とする。
    • 一种抛光垫,其至少具有抛光层,其中:具有侧表面的槽设置在所述抛光层的抛光表面上; 所述侧表面中的至少一个由与所述抛光表面连续的第一侧表面构成,并与所述抛光表面形成角度(a),并且所述第二侧表面与所述第一侧表面连续地形成角度(ß) 平面与抛光面平行; 与抛光面形成的角度(a)大于95度; 与平行于抛光表面的平面形成的角度(β)大于95度并且小于与抛光表面形成的角度(a); 并且从抛光表面到第一侧表面和第二侧表面之间的折叠点的折痕深度大于0.2mm且为3.0mm以下。