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1. 发明申请

WO2009126576A3 LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE 审中-公开
标题翻译：具有集成流量均衡器和改进的导体的下层
公开(公告)号：WO2009126576A3
公开(公告)日：2010-03-18
申请号：PCT/US2009039662
申请日：2009-04-06
申请人： APPLIED MATERIALS INC , CARDUCCI JAMES D , NGUYEN ANDREW , BALAKRISHNA AJIT , KUTNEY MICHAEL C
发明人： CARDUCCI JAMES D , NGUYEN ANDREW , BALAKRISHNA AJIT , KUTNEY MICHAEL C
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译：等离子体处理室具有具有集成流量均衡器的下衬套。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

2. 发明申请

WO2009097181A3 ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 审中-公开
标题翻译：具有流动均衡器和下衬的蚀刻室
公开(公告)号：WO2009097181A3
公开(公告)日：2009-12-03
申请号：PCT/US2009030708
申请日：2009-01-12
申请人： APPLIED MATERIALS INC , CARDUCCI JAMES D , LO KIN PONG , BERA KALLOL , KUTNEY MICHAEL C , MILLER MATTHEW L
发明人： CARDUCCI JAMES D , LO KIN PONG , BERA KALLOL , KUTNEY MICHAEL C , MILLER MATTHEW L
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32467
摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.
摘要翻译：等离子体处理室具有降低的流量均衡器和下部室内衬。在蚀刻过程中，处理气体可能会不均匀地从处理室中拉出，这可能导致衬底的不均匀蚀刻。通过均衡从腔室排出的处理气体的流量，可以发生更均匀的蚀刻。通过将流量均衡器电耦合到腔室衬套，来自流量均衡器的RF返回路径可以沿着腔室衬管延伸，并因此减少在处理期间在衬底之下抽取的等离子体的量。

3. 发明申请

WO2011017333A3 APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR 审中-公开
标题翻译：用于低介电维修的装置和方法
公开(公告)号：WO2011017333A3
公开(公告)日：2011-05-19
申请号：PCT/US2010044263
申请日：2010-08-03
申请人： APPLIED MATERIALS INC , CARDUCCI JAMES D , NEMANI SRINIVAS D , TANG HAIRONG , SUN HUI , MARKOVSKY IGOR , GOLD EZRA R , KAYA IWALANI S , YIEH ELLIE Y , ZHANG CHUNLEI , COLLINS KENNETH S , ARMACOST MICHAEL D , BALAKRISHNA AJIT , LILL THORSTEN B
发明人： CARDUCCI JAMES D , NEMANI SRINIVAS D , TANG HAIRONG , SUN HUI , MARKOVSKY IGOR , GOLD EZRA R , KAYA IWALANI S , YIEH ELLIE Y , ZHANG CHUNLEI , COLLINS KENNETH S , ARMACOST MICHAEL D , BALAKRISHNA AJIT , LILL THORSTEN B
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/31058 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/76814 , H01L21/76825 , H01L21/76831
摘要： A method, a system and a computer readable medium for integrated in- vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.
摘要翻译：一种用于集成真空修复由蚀刻和/或剥离处理损坏的低k电介质薄膜的方法，系统和计算机可读介质。修复室与等离子体蚀刻和/或剥离室整合到相同的平台上以修复低k电介质薄膜而不破坏损坏事件与修复事件之间的真空。可以在低k修复处理之前，之后或期间的任何组合中在集成蚀刻/修复平台上提供UV辐射以增加修复处理的功效和/或修复的稳定性。

4. 发明申请

WO2012018557A3 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 审中-公开
标题翻译：具有有源均匀转向的对称甚高频等离子体功率耦合器
公开(公告)号：WO2012018557A3
公开(公告)日：2012-04-26
申请号：PCT/US2011045023
申请日：2011-07-22
申请人： APPLIED MATERIALS INC , COLLINS KENNETH S , CHEN ZHIGANG , RAMASWAMY KARTIK , CARDUCCI JAMES D , RAUF SHAHID , NGUYEN ANDREW
发明人： COLLINS KENNETH S , CHEN ZHIGANG , RAMASWAMY KARTIK , CARDUCCI JAMES D , RAUF SHAHID , NGUYEN ANDREW
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴甚高频功率耦合器包括在功率耦合器的中空圆柱形外导体内部的导电元件并且围绕功率耦合器的中空圆柱形内导体的轴向部分。与空心圆柱形外导体接触的各个电机驱动器连接到可移动导电元件的相应位置。

5. 发明申请

WO2011094143A3 APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SHOWERHEAD 审中-公开
标题翻译：用于控制喷头的温度均匀性的装置
公开(公告)号：WO2011094143A3
公开(公告)日：2011-11-24
申请号：PCT/US2011022202
申请日：2011-01-24
申请人： APPLIED MATERIALS INC , BERA KALLOL , CARDUCCI JAMES D , NOORBAKHSH HAMID , ELIZAGA LARRY D , BUCHBERGER JR DOUGLAS A , NGUYEN ANDREW
发明人： BERA KALLOL , CARDUCCI JAMES D , NOORBAKHSH HAMID , ELIZAGA LARRY D , BUCHBERGER JR DOUGLAS A , NGUYEN ANDREW
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： F28F7/02 , H01L21/67109
摘要： An apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead is provided herein. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead may include a showerhead having a substrate facing surface and one or more plenums for providing one or more process gases through a plurality of gas distribution holes formed through the substrate facing surface of the showerhead; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the showerhead to flow a heat transfer fluid.
摘要翻译：本文提供了一种用于控制喷头的面向基板的表面的热均匀性的设备。在一些实施例中，喷头的基板面向表面的热均匀性可被控制为更均匀。在一些实施例中，喷头的基板面向表面的热均匀性可以被控制为以期望的图案不均匀。在一些实施例中，用于控制喷头的面向基板的表面的热均匀性的设备可包括具有面向基板的表面的喷头和用于通过多个气体分配孔提供一种或多种工艺气体的一个或多个充气室，面对基板的喷头表面; 以及多个具有基本相等的流体传导性的流动路径，其设置在喷头内以使传热流体流动。

6. 发明申请

WO2009089245A2 HEATED SHOWERHEAD ASSEMBLY 审中-公开
标题翻译：加热淋浴组件
公开(公告)号：WO2009089245A2
公开(公告)日：2009-07-16
申请号：PCT/US2009030267
申请日：2009-01-07
申请人： APPLIED MATERIALS INC , CARDUCCI JAMES D , REGELMAN OLGA , BERA KALLOL , BUCHBERGER DOUGLAS A , BRILLHART PAUL
发明人： CARDUCCI JAMES D , REGELMAN OLGA , BERA KALLOL , BUCHBERGER DOUGLAS A , BRILLHART PAUL
IPC分类号： H01L21/3065 , H01L21/00
CPC分类号： H01J37/3244 , B32B43/00 , C23C16/4412 , C23C16/45565 , C23C16/4557 , C23C16/45591 , H01J37/32449 , H01J37/32724 , H01J2237/3343 , Y10T29/49815
摘要： The present invention generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.
摘要翻译：本发明通常包括可用于将处理气体供应到处理室中的加热喷头组件。处理室可以是蚀刻室。当处理气体从处理室排出时，衬底的均匀处理可能是困难的。当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。不均匀的等离子体可能导致不均匀的蚀刻。为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。第一区域对应于衬底的周边，而第二区域对应于衬底的中心。通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

7. 发明申请

WO2012024116A3 SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR 审中-公开
标题翻译：等离子体反应器的对称甚高频源
公开(公告)号：WO2012024116A3
公开(公告)日：2012-04-26
申请号：PCT/US2011047109
申请日：2011-08-09
申请人： APPLIED MATERIALS INC , RAMASWAMY KARTIK , MARKOVSKY IGOR , CHEN ZHIGANG , CARDUCCI JAMES D , COLLINS KENNETH S , RAUF SHAHID , MISRA NIPUN , DORF LEONID , YE ZHENG JOHN
发明人： RAMASWAMY KARTIK , MARKOVSKY IGOR , CHEN ZHIGANG , CARDUCCI JAMES D , COLLINS KENNETH S , RAUF SHAHID , MISRA NIPUN , DORF LEONID , YE ZHENG JOHN
IPC分类号： H05H1/46 , H03H7/40 , H05H1/34
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
摘要翻译：本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

8. 发明申请

WO2011068730A2 RECONFIGURABLE MULTI-ZONE GAS DELIVERY HARDWARE FOR SUBSTRATE PROCESSING SHOWERHEADS 审中-公开
标题翻译：可重构的多区域气体输送硬件用于基板处理喷头
公开(公告)号：WO2011068730A2
公开(公告)日：2011-06-09
申请号：PCT/US2010057959
申请日：2010-11-24
申请人： APPLIED MATERIALS INC , NOORBAKHSH HAMID , CARDUCCI JAMES D
发明人： NOORBAKHSH HAMID , CARDUCCI JAMES D
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/32091 , H01J37/3244 , H01J37/32449 , Y10T29/49716
摘要： Reconfigurable showerheads used in process chambers for substrate processing are provided herein. In some embodiments, a reconfigurable showerhead may include a body having one or more plenums disposed therein; and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones. In some embodiments, a substrate processing system may include a process chamber having a reconfigurable showerhead coupled to a gas supply for providing one or more process gases to the process chamber, the reconfigurable showerhead including a body having one or more plenums disposed therein and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones.
摘要翻译：本文提供了用于基板处理的处理室中使用的可重构喷头。在一些实施例中，可重新配置的喷头可以包括具有布置在其中的一个或多个增压室的主体; 以及一个或多个插入件，其被配置为布置在所述一个或多个增压室内，其中所述一个或多个插入件将所述可重新配置的喷淋头分成多个区域。在一些实施例中，衬底处理系统可以包括处理室，处理室具有耦合到气体供应的可重新配置的喷头，用于向处理室提供一种或多种处理气体，可重新配置的喷头包括具有布置在其中的一个或多个增压室的主体，更多的插入件被构造成布置在一个或多个增压室内，其中一个或多个插入件将可重新配置的喷淋头分成多个区域。

9. 发明申请

WO2010042410A3 APPARATUS FOR EFFICIENT REMOVAL OF HALOGEN RESIDUES FROM ETCHED SUBSTRATES 审中-公开
标题翻译：用于有效去除蚀刻基质中的卤素残余物的装置
公开(公告)号：WO2010042410A3
公开(公告)日：2010-06-10
申请号：PCT/US2009059449
申请日：2009-10-02
申请人： APPLIED MATERIALS INC , DAVIS MATTHEW F , BAHNG KENNETH J , MOREY TRAVIS , CARDUCCI JAMES D
发明人： DAVIS MATTHEW F , BAHNG KENNETH J , MOREY TRAVIS , CARDUCCI JAMES D
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/02071 , H01L21/67109 , H01L21/67115 , H01L21/67201 , H01L21/68728 , H01L21/68785 , Y10T428/24008 , Y10T428/24628
摘要： An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.
摘要翻译：提供了一种从基底去除挥发性残留物的设备。在一个实施例中，用于从基板去除含卤素残余物的装置包括适于在其中保持真空的操作的腔室和定位成加热设置在腔室中的基板的加热模块。用于从基底去除含卤素残余物的装置还包括以下至少一个：A）具有从其径向延伸的突起的温度控制基座，适于将温控基座支撑在腔室主体的突出部上，突出部将基座热隔离来自腔体; B）一对衬底支架，其包括从弧形主体的内边缘径向向内延伸的两个支撑凸缘，每个支撑凸缘具有衬底支撑台阶，所述衬底支撑台阶包括倾斜平台; 或者C）圆顶窗户。

10. 发明申请

WO0237541A2 DIELECTRIC ETCH CHAMBER WITH EXPANDED PROCESS WINDOW 审中-公开
标题翻译：具有扩展工艺窗口的电介质隔离室
公开(公告)号：WO0237541A2
公开(公告)日：2002-05-10
申请号：PCT/US0146012
申请日：2001-11-01
申请人： APPLIED MATERIALS INC
发明人： CARDUCCI JAMES D , NOORBAKHSH HAMID , LEE EVANS Y , PU BRYAN Y , SHAN HONGQING , BJORKMAN CLAES , SALIMIAN SIAMAK , LUSCHER PAUL E , WELCH MICHAEL D , LIU JINGBAO , KOMATSU TAKEHIKO , DOAN KENNY L , CHANG MELODY , WANG ZHUXU , KIM YUNSANG , WANG RUIPING
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.
摘要翻译：具有扩展处理窗口的热控等离子体蚀刻室具有热控腔室衬垫，热分解气体入口，高排气能力，磁约束和粘附改善表面纹理。根据一个或多个表面纹理处理来调节室的内壁表面，以改善其上的副产物粘附。扩展的流动能力使得住宿时间短。通过至少部分地形成在腔室衬套中的一个或多个流体通道的流体可以包括第一衬垫，第二衬垫或第一衬垫和第二衬套。具有小的热质量并与温度受控衬管或衬垫热分解的多个气体喷嘴或微型分配板将工艺气体引入处理室。等离子体约束系统防止等离子体和产物排出泵送通道或排气系统部件。基板支撑件包括静电卡盘，双区域背面冷却和坚固的电极。支撑件包括具有预定电阻率的陶瓷基板支撑件，具有流体通道的支撑板和中间的导热层，其可包括压敏敏感的丙烯酸粘合剂和金属或金属合金。

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