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1. 发明申请

WO2007024493A1 NITROGEN PROFILE ENGINEERING IN HIGH-K NITRIDATION OF A GATE DIELECTRIC LAYER 审中-公开
标题翻译：硝酸盐介质层高氮化氮工程简介
公开(公告)号：WO2007024493A1
公开(公告)日：2007-03-01
申请号：PCT/US2006/031132
申请日：2006-08-10
申请人： APPLIED MATERIALS, INC. , MUTHUKRISHNAN, Shankar , SHARANGPANI, Rahul , GOYANI, Tejal , NARWANKAR, Pravin K. , KHER, Shreyas S. , MA, Yi , CONTI, Giuseppina R.
发明人： MUTHUKRISHNAN, Shankar , SHARANGPANI, Rahul , GOYANI, Tejal , NARWANKAR, Pravin K. , KHER, Shreyas S. , MA, Yi , CONTI, Giuseppina R.
IPC分类号： H01L21/314 , H01L21/316 , C23C16/40 , H01L21/28
CPC分类号： H01L21/28202 , H01L21/3144 , H01L21/3145 , H01L21/31645 , H01L29/517
摘要： A method and apparatus for forming a nitrided gate dielectric. The method comprises incorporating nitrogen into a dielectric film using a plasma nitridation process to form a nitrided gate dielectric. The first step involves providing a substrate comprising a gate dielectric film. The second step involves inducing a voltage on the substrate. Finally, the substrate is exposed to a plasma comprising a nitrogen source while maintaining the voltage to form a nitrided gate dielectric on the substrate. In one embodiment, the voltage is induced on the substrate by applying a voltage to an electrostatic chuck supporting the substrate. In another embodiment, the voltage is induced on the substrate by applying a DC bias voltage to an electrode positioned adjacent the substrate.
摘要翻译：一种用于形成氮化栅极电介质的方法和装置。该方法包括使用等离子体氮化工艺将氮掺入电介质膜中以形成氮化栅极电介质。第一步涉及提供包括栅极电介质膜的衬底。第二步涉及在衬底上感应电压。最后，将衬底暴露于包含氮源的等离子体，同时保持电压以在衬底上形成氮化栅电介质。在一个实施例中，通过向支撑衬底的静电卡盘施加电压来在衬底上感应电压。在另一个实施例中，通过向邻近衬底定位的电极施加DC偏置电压来在衬底上感应出电压。

2. 发明申请

WO2009154836A3 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM 审中-公开
公开(公告)号：WO2009154836A3
公开(公告)日：2009-12-23
申请号：PCT/US2009/038402
申请日：2009-03-26
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NARWANKAR, Pravin K. , AHMED, Khaled Z. , MA, Yi
发明人： KHER, Shreyas S. , NARWANKAR, Pravin K. , AHMED, Khaled Z. , MA, Yi
IPC分类号： H01L21/31 , H01L21/20 , H01L21/336
摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

3. 发明申请

WO2008028082A2 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前兆和硬件
公开(公告)号：WO2008028082A2
公开(公告)日：2008-03-06
申请号：PCT/US2007/077301
申请日：2007-08-30
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
发明人： KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸气发生器区域内收集的有毒，自燃或可燃气体。

4. 发明申请

WO2019241351A1 ROTARY REACTOR FOR UNIFORM PARTICLE COATING WITH THIN FILMS 审中-公开
公开(公告)号：WO2019241351A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/036721
申请日：2019-06-12
申请人： APPLIED MATERIALS, INC. , NEIKIRK, Colin C. , NARWANKAR, Pravin K. , GANGAKHEDKAR, Kaushal , SIVARAMAKRISHNAN, Visweswaren , FRANKEL, Jonathan , ISHIKAWA, David Masayuki , TRUONG, Quoc , YUDOVSKY, Joseph
发明人： NEIKIRK, Colin C. , NARWANKAR, Pravin K. , GANGAKHEDKAR, Kaushal , SIVARAMAKRISHNAN, Visweswaren , FRANKEL, Jonathan , ISHIKAWA, David Masayuki , TRUONG, Quoc , YUDOVSKY, Joseph
IPC分类号： C23C16/455 , C23C16/44 , C23C16/448 , C23C16/40 , A61K9/50
摘要： A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors to rotate the rotary vacuum chamber in a first direction about an axial axis of a cylindrical portion of the rotary vacuum chamber, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the one or more motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

5. 发明申请

WO2021248122A1 COATED DRUG COMPOSITIONS AND METHODS OF PREPARING THE SAME 审中-公开
公开(公告)号：WO2021248122A1
公开(公告)日：2021-12-09
申请号：PCT/US2021/036183
申请日：2021-06-07
申请人： APPLIED MATERIALS, INC. , WANG, Fei , WANG, Miaojun , FRANKEL, Jonathan , CHIRUVOLU, Shivkumar , NARWANKAR, Pravin K.
发明人： WANG, Fei , WANG, Miaojun , FRANKEL, Jonathan , CHIRUVOLU, Shivkumar , NARWANKAR, Pravin K. , GANAPATHY, Balaji
IPC分类号： A61K9/50 , A61K9/16 , A61K31/397 , A61K31/517 , A61K31/4422 , A61K9/501 , A61K9/5089
摘要： A pharmaceutical composition containing a metal oxide coated particle comprising 1) an amorphous solid dispersion (ASD) core containing an active pharmaceutical ingredient (API) and a polymer; and 2) a metal oxide coating, and the method of making said metal oxide coated particle by atomic layer deposition (ALD). The metal oxide coated particle is useful because it prevents the ASD from crystallization and helps maintain the ASD in an amorphous form.

6. 发明申请

WO2013116478A1 MULTI-CHAMBER SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：多层基板处理系统
公开(公告)号：WO2013116478A1
公开(公告)日：2013-08-08
申请号：PCT/US2013/024079
申请日：2013-01-31
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , PATIBANDLA, Nag B. , NARWANKAR, Pravin K. , XIA, Li-Qun , FUJITA, Toshiaki , HOFMANN, Ralf , OH, Jeonghoon , SATYA, Srinivas , WU, Banqiu
发明人： YUDOVSKY, Joseph , PATIBANDLA, Nag B. , NARWANKAR, Pravin K. , XIA, Li-Qun , FUJITA, Toshiaki , HOFMANN, Ralf , OH, Jeonghoon , SATYA, Srinivas , WU, Banqiu
IPC分类号： H01L21/677 , H01L21/205 , C23C16/44
CPC分类号： C23C16/4584 , C23C16/45519 , C23C16/45551 , C23C16/54 , H01L21/67742
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual- substrate processing station includes two substrate support assemblies for supporting two substrates thereon.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。设置在基板支撑组件上的多个基板在基板处理平台内进出处理。衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

7. 发明申请

WO2013115957A1 STACKED SUBSTRATE PROCESSING CHAMBERS 审中-公开
标题翻译：堆叠基板加工板
公开(公告)号：WO2013115957A1
公开(公告)日：2013-08-08
申请号：PCT/US2013/021237
申请日：2013-01-11
申请人： APPLIED MATERIALS, INC. , OH, Jeonghoon , HOFMANN, Ralf , FUJITA, Toshiaki , NARWANKAR, Pravin K. , PATIBANDLA, Nag B. , SATYA, Srinivas , WU, Banqiu , XIA, Li-Qun
发明人： OH, Jeonghoon , HOFMANN, Ralf , FUJITA, Toshiaki , NARWANKAR, Pravin K. , PATIBANDLA, Nag B. , SATYA, Srinivas , WU, Banqiu , XIA, Li-Qun
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： H01L21/67178 , C23C16/54 , H01L21/6719
摘要： A substrate processing system for processing multiple substrates is provided and generally includes two or more substrate processing chambers stacked. The substrate processing chambers are generally grouped and stacked into one or more substrate processing platforms such that a fluid delivery system and/or an exhaust system can be shared within the group. Each substrate processing chamber is designed with a minimal effective processing region to conduct a fabrication process on the surface of a substrate. The substrate processing system is capable of simultaneously transferring multiple substrates in and out a group of stacked substrate processing chambers and to improve system processing throughput.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括堆叠的两个或更多个基板处理室。基板处理室通常被分组并堆叠成一个或多个基板处理平台，使得流体输送系统和/或排气系统可以在该组内共享。每个基板处理室设计有最小的有效处理区域，以在基板的表面上进行制造工艺。基板处理系统能够同时将多个基板输入和输出一组堆叠的基板处理室，并且提高系统处理吞吐量。

8. 发明申请

WO2011035157A2 APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 审中-公开
标题翻译：在线性系统中形成能量储存和光伏器件的装置和方法
公开(公告)号：WO2011035157A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049335
申请日：2010-09-17
申请人： APPLIED MATERIALS, INC. , PUSHPARAJ, Victor L. , NARWANKAR, Pravin K. , HAAS, Dieter , THAKUR, Bipin , ARCOT, Mahesh , GUJAR, Vikas , NALAMASU, Omkaram
发明人： PUSHPARAJ, Victor L. , NARWANKAR, Pravin K. , HAAS, Dieter , THAKUR, Bipin , ARCOT, Mahesh , GUJAR, Vikas , NALAMASU, Omkaram
IPC分类号： H01L31/042
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了一种用于在基底上形成复合材料的方法和装置。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。纤维网被引导通过各种处理室以形成复合材料。在另一个实施例中，大规模衬底包括离散衬底。离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。复合材料可用于形成储能装置和/或光伏器件。

9. 发明申请

WO2005117087A1 FORMATION OF A SILICON OXYNITRIDE LAYER ON A HIGH-K DIELECTRIC MATERIAL 审中-公开
标题翻译：在高K电介质材料上形成硅氧烷层
公开(公告)号：WO2005117087A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/016690
申请日：2005-05-12
申请人： APPLIED MATERIALS, INC. , NARWANKAR, Pravin K. , HIGASHI, Gregg
发明人： NARWANKAR, Pravin K. , HIGASHI, Gregg
IPC分类号： H01L21/314
CPC分类号： H01L21/3141 , C23C16/401 , H01L21/3143
摘要： Embodiments of the invention provide methods for depositing a capping layer on a dielectric layer disposed on a substrate. In one example, a process includes exposing a substrate to a deposition process to form a dielectric layer thereon, exposing the substrate to sequential pulses of a silicon precursor and an oxidizing gas to form a silicon-containing layer on the dielectric layer during a deposition process, exposing the substrate to a nitridation process to form a capping layer thereon and exposing the substrate to an annealing process for a predetermined time. The capping layer may a thickness of about 5 Å or less. In one example, the oxidizing gas contains water vapor derived from a hydrogen source gas and an oxygen source gas processed by a water vapor generator containing a catalyst. In another example, the deposition, nitridation and annealing processes occur in the same process chamber.
摘要翻译：本发明的实施例提供了在设置在基底上的电介质层上沉积覆盖层的方法。在一个实例中，一种方法包括将衬底暴露于沉积工艺以在其上形成介电层，将衬底暴露于硅前体和氧化气体的顺序脉冲，以在沉积过程中在电介质层上形成含硅层将衬底暴露于氮化工艺以在其上形成覆盖层，并将衬底暴露于退火过程达预定时间。封盖层可以具有大约或更小的厚度。在一个实例中，氧化气体含有源自氢源气体的水蒸汽和由含有催化剂的水蒸气发生器处理的氧源气体。在另一个实例中，沉积，氮化和退火过程发生在相同的处理室中。

10. 发明申请

WO2018098205A1 METHODS FOR DEPOSITING FLOWABLE CARBON FILMS USING HOT WIRE CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2018098205A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062903
申请日：2017-11-21
申请人： APPLIED MATERIALS, INC.
发明人： CHATTERJEE, Sukti , SCUDDER, Lance A. , LIU, Eric H. , NARWANKAR, Pravin K. , MANNA, Pramit , MALLICK, Abhijit
IPC分类号： C23C16/452 , C23C16/26 , C23C16/56
摘要： In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.

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