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    • 8. 发明申请
    • INTERMIXING PREVENTION IN ELECTROCHEMICAL DEVICES
    • 电化学装置中的预防措施
    • WO2017053473A1
    • 2017-03-30
    • PCT/US2016/052946
    • 2016-09-21
    • APPLIED MATERIALS, INC.
    • SUN, LizhongWANG, MiaojunKWAK, Byung-Sung Leo
    • H01M6/40H01M4/525
    • H01M4/525H01M4/0471H01M4/1391H01M6/40H01M10/0436H01M10/052H01M10/0562H01M10/0585
    • A thin film battery may comprise: an intermixing barrier layer on a thin substrate, such as a YSZ substrate, with a substrate thickness in the range of 10 microns to 100 microns, the intermixing barrier layer comprising one or more of AI 2 O 3 , Si 3 N 4 and other electrically insulating layers, and in embodiments having a higher cation packing density than the substrate; a patterned current collector layer on the intermixing barrier layer; and a cathode layer, such as LCO, on the current collector layer, wherein the intermixing barrier layer, the patterned current collector and the cathode layer form a stack on the substrate; wherein the intermixing barrier layer prevents intermixing of the current collector and cathode layers, and any other layers in the stack during annealing, at a temperature in the range of 500 °C to 800 °C, with a soak time in the range of 2 to 30 hours.
    • 薄膜电池可以包括:薄的衬底上的混合阻挡层,例如YSZ衬底,衬底厚度在10微米至100微米的范围内,混合阻挡层包含一种或多种Al 2 O 3,Si 3 N 4等 并且在具有比衬底更高的阳离子堆积密度的实施方案中; 在混合阻挡层上的图案化集电器层; 以及集电体层上的诸如LCO的阴极层,其中所述混合阻挡层,所述图案化集电器和所述阴极层在所述衬底上形成堆叠; 其中所述混合阻挡层防止在500℃至800℃的温度范围内的退火期间所述集电器和阴极层以及所述堆叠中的任何其它层的混合,其中所述浸泡时间在2至 30小时