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1. 发明申请

WO2009059817A1 SPUTTER COATING DEVICE AND COATING METHOD 审中-公开
标题翻译：溅射涂层装置和涂层方法
公开(公告)号：WO2009059817A1
公开(公告)日：2009-05-14
申请号：PCT/EP2008/058654
申请日：2008-07-04
申请人： APPLIED MATERIALS INC., A CORPORATION OF THE STATE OF DELAWARE , MOELLE, Christoph , LOPP, Andreas , KLOEPPEL, Andreas , STOLLEY, Tobias , LINDENBERG, Ralph , BENDER, Marcus
发明人： MOELLE, Christoph , LOPP, Andreas , KLOEPPEL, Andreas , STOLLEY, Tobias , LINDENBERG, Ralph , BENDER, Marcus
IPC分类号： H01J37/34
CPC分类号： H01J37/3408 , H01J37/3452 , H01J37/3455
摘要： A magnet/target assembly (1) comprises a target (2) consisting of a plurality of (virtual) segments (2.1, 2.2, 2.3, 2.4, 2.5, 2.6) arranged side by side, each of them extending along the longitudinal axis x of the target (2). Each of the plurality of target segments (2.1, 2.2, 2.3, 2.4, 2.5, 2.6) has a magnet system (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) attributed to the respective target segment. In an embodiment of the target/magnet assembly (1) according to the present invention the magnet systems (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) are arranged mutually offset relative to their respective adjacent magnet systems (3.1, 3.2, 3.3, 3.4, 3.5 and 3.6), respectively, while scanning the target segments (2.1, 2.2, 2.3, 2.4, 2.5 and 2.6), respectively. Particularly, the first magnet system (3.1), the third magnet system (3.3) and the fifth magnet system (3.5) are a first group of magnet systems moving parallel and synchronously with each other, and the second magnet system (3.2), the forth magnet systems (3.4) and the sixth magnet system (3.6) are a second group of magnet systems moving parallel and synchronously with each other. The first, third and fifth magnet systems (3.1, 3.3, 3.5) are alternately arranged with the second, forth and sixth magnet systems (3.2, 3.4 and 3.6), respectively, in the lateral direction y of the target (2). The paths of movement of the magnet systems are arranged parallel. The first and second groups of magnet systems (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) are arranged offset in a longitudinal direction x of the target (2), i.e. arranged with a distance d between the groups in the longitudinal direction x of the target (2).
摘要翻译：磁体/目标组件（1）包括由并排设置的多个（虚拟）段（2.1,2.2,2.3,2.4,2.5,2.6）组成的目标（2），每个都沿着纵向轴线x 的目标（2）。多个目标段（2.1,2.2,2.3,2.4,2.5,2.6）中的每一个具有归因于相应目标段的磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）。在根据本发明的靶/磁体组件（1）的实施例中，磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）相对于它们各自相邻的磁体系统（3.1,3.2,3.3 ，3.4,3.5和3.6），分别扫描目标段（2.1,2.2,2.3,2.4,2.5和2.6）。特别地，第一磁体系统（3.1），第三磁体系统（3.3）和第五磁体系统（3.5）是彼此平行和同步移动的第一组磁体系统，第二磁体系统（3.2），第四磁体系统（3.4）和第六磁体系统（3.6）是彼此平行和同步移动的第二组磁体系统。第一，第三和第五磁体系统（3.1,3.3,3.5）分别与靶（2）的横向方向y分别与第二，第四和第六磁体系统（3.2,3.4和3.6）配置。磁体系统的运动路径平行排列。第一和第二组磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）在目标（2）的纵向方向x上偏移地布置，即沿着纵向方向x之间的距离d 的目标（2）。

2. 发明申请

WO2013020589A1 ADJUSTABLE MASK 审中-公开
标题翻译：可调面膜
公开(公告)号：WO2013020589A1
公开(公告)日：2013-02-14
申请号：PCT/EP2011/063714
申请日：2011-08-09
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
发明人： SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
IPC分类号： C23C14/04 , C23C16/04
CPC分类号： C23C14/042 , C23C16/042
摘要： An deposition apparatus for forming a deposition material layer on a substrate is described. The deposition apparatus includes a substrate support adapted for holding a substrate; and an edge (660) exclusion mask (640) for covering a periphery of the substrate (610) during layer deposition. The mask has at least one frame portion defining an aperture. The at least one frame portion of the mask is adapted for being moved (670,680) with respect to the substrate depending on the amount of deposition material deposited on the at least one frame portion of the mask. Further, a method for depositing a deposition material layer on a substrate using an edge exclusion mask is described.
摘要翻译：描述了用于在基板上形成沉积材料层的沉积装置。沉积设备包括适于保持衬底的衬底支撑件; 以及用于在层沉积期间覆盖衬底（610）的周边的边缘（660）排除掩模（640）。掩模具有限定孔的至少一个框架部分。掩模的至少一个框架部分适于相对于基板移动（670,680），这取决于沉积在掩模的至少一个框架部分上的沉积材料的量。此外，描述了使用边缘排除掩模在基板上沉积沉积材料层的方法。

3. 发明申请

WO2013060355A1 MULTIDIRECTIONAL RACETRACK ROTARY CATHODE FOR PVD ARRAY APPLICATIONS 审中-公开
标题翻译： PVD阵列应用的多媒体旋转阴极
公开(公告)号：WO2013060355A1
公开(公告)日：2013-05-02
申请号：PCT/EP2011/068552
申请日：2011-10-24
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
发明人： SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/32532 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/345 , H01J37/3452 , H01J37/3455
摘要： A cathode assembly (130; 200; 300; 400) for a sputter deposition apparatus and a method for coating a substrate is provided. The cathode assembly has a coating side for coating on a substrate. Further, the cathode assembly includes a rotary target assembly adapted for rotating a target material (210; 310; 410) around a rotary axis (220; 320; 420); at least a first magnet assembly (230; 330; 340; 430; 431; 432; 433) having an inner magnet pole and at least one outer magnet poles and being adapted for generating one or more plasma regions (240; 250; 340; 350; 440; 441; 442; 443). The cathode assembly (130; 200; 300; 400) has a first angular coordinate for a magnet pole, the magnet pole being provided for the coating side, and a second angular coordinate for a further magnet pole, the magnet pole being provided for the coating side; wherein the first angular coordinate (260; 360; 460) and the second angular coordinate (270; 370; 461) define an angle a larger than about 20 degrees and smaller than about 160 degrees.
摘要翻译：提供了一种用于溅射沉积设备的阴极组件（130; 200; 300; 400）和一种用于涂覆衬底的方法。阴极组件具有用于在基板上涂覆的涂层侧。此外，阴极组件包括适于围绕旋转轴线（220; 320; 420）旋转靶材料（210; 310; 410）的旋转靶组件; 至少一个具有内磁极和至少一个外磁极的第一磁体组件（230; 330; 340; 430; 431; 432; 433），并适于产生一个或多个等离子体区域（240; 250; 340; 350; 440; 441; 442; 443）。阴极组件（130; 200; 300; 400）具有用于磁极的第一角度坐标，为涂层侧提供磁极，并且为另一个磁极设置第二角坐标，磁极设置用于涂层面其中所述第一角坐标（260; 360; 460）和所述第二角坐标（270; 370; 461）限定大于约20度且小于约160度的角度。

4. 发明申请

WO2012041557A1 SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL 审中-公开
标题翻译：用于形成溅射材料层的系统和方法
公开(公告)号：WO2012041557A1
公开(公告)日：2012-04-05
申请号：PCT/EP2011/062674
申请日：2011-07-22
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido , LINDENBERG, Ralph , LOPP, Andreas , SCHWANITZ, Konrad , LIU, Jian
发明人： BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido , LINDENBERG, Ralph , LOPP, Andreas , SCHWANITZ, Konrad , LIU, Jian
IPC分类号： H01J37/34
CPC分类号： C23C14/352 , C23C14/35 , H01J37/34 , H01J37/3473
摘要： The present disclosure describes a method of coating a substrate (110), the method including forming a layer (806) of sputtered material on the substrate (110). Forming the layer of sputtered material may include: sputtering material from at least one rotatable target (120') over the substrate (110); varying the relative position between the at least one target (120') and the substrate (110). In addition, the present disclosure describes varying the distance between a target (120; 120'; 120'') and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate.
摘要翻译：本公开描述了涂覆基底（110）的方法，该方法包括在基底（110）上形成溅射材料层（806）。形成溅射材料层可以包括：从衬底（110）上的至少一个可旋转靶（120'）溅射材料; 改变所述至少一个靶（120'）和所述衬底（110）之间的相对位置。另外，本公开内容描述了在溅射过程期间改变目标（120; 120'; 120“）和衬底之间的距离。本公开进一步描述了用于涂覆基底的系统。

5. 发明申请

WO2011051294A1 SPUTTER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：溅射沉积系统和方法
公开(公告)号：WO2011051294A1
公开(公告)日：2011-05-05
申请号：PCT/EP2010/066185
申请日：2010-10-26
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , BENDER, Marcus
发明人： LOPP, Andreas , BENDER, Marcus
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3405 , C23C14/351 , H01J37/347
摘要： A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.
摘要翻译：提供了一种适用于将薄膜沉积到衬底表面上的溅射沉积系统。该系统包括阴极组件，其具有与衬底表面相对的至少两个阴极靶，并适于提供用于形成薄膜的阴极材料。等离子体源适于产生用于将阴极材料溅射出至少两个阴极靶的等离子体。磁场发生器适于提供可独立于等离子体源控制的磁场，使得通过磁场对带电粒子运动的作用来补偿高沉积速率部分和低沉积速率部分之间的差异。

6. 发明申请

WO2022002349A1 NOZZLE ASSEMBLY, EVAPORATION SOURCE, DEPOSITION SYSTEM AND METHOD FOR DEPOSITING AN EVAPORATED MATERIAL ONTO A SUBSTRATE 审中-公开
公开(公告)号：WO2022002349A1
公开(公告)日：2022-01-06
申请号：PCT/EP2020/068257
申请日：2020-06-29
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , BANGERT, Stefan
发明人： LOPP, Andreas , BANGERT, Stefan
IPC分类号： C23C14/24 , C23C14/16 , C23C14/56 , H01M4/04 , H01M4/38 , C23C14/243 , C23C14/562 , C23C14/564 , C23C14/568 , H01M4/0423 , H01M4/1395 , H01M4/382
摘要： A nozzle assembly for guiding an evaporated material to a substrate is described. The nozzles assembly includes a plurality of nozzles, one or more nozzles of the plurality of nozzles include: a first nozzle section having a first end and a second end, the first nozzle section comprising a vapor outlet at the second end, and an orifice at or adjacent to the vapor outlet having an orifice diameter.

7. 发明申请

WO2018054472A1 NOZZLE FOR A DISTRIBUTION ASSEMBLY OF A MATERIAL DEPOSITION SOURCE ARRANGEMENT, MATERIAL DEPOSITION SOURCE ARRANGEMENT, VACUUM DEPOSITION SYSTEM AND METHOD FOR DEPOSITING MATERIAL 审中-公开
标题翻译：用于材料沉积物分布组件的喷嘴来源布置，材料沉积源布置，真空沉积系统和用于沉积材料的方法
公开(公告)号：WO2018054472A1
公开(公告)日：2018-03-29
申请号：PCT/EP2016/072578
申请日：2016-09-22
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , HAAS, Dieter
发明人： LOPP, Andreas , HAAS, Dieter
IPC分类号： C23C14/12 , C23C14/24 , C23C14/56 , C23C16/455
摘要： A nozzle (100) for being connected to a distribution assembly for guiding evaporated material from a material source into a vacuum chamber is described. The nozzle includes: a nozzle inlet (110) for receiving the evaporated material; a nozzle outlet (120) for releasing the evaporated material to the vacuum chamber; and a nozzle passage (130) extending from the nozzle inlet (110) to the nozzle outlet (120) in a flow direction (111), wherein the nozzle passage (130) comprises an outlet section (131) having an aperture angle (a) which continuously increases in the flow direction (111). Further, a material deposition arrangement having such a nozzle, a vacuum deposition system with the material source arrangement, and a method for depositing evaporated material are provided.
摘要翻译：描述了用于连接到分配组件的喷嘴（100），该分配组件用于将来自材料源的蒸发材料引导到真空室中。喷嘴包括：用于接收蒸发材料的喷嘴入口（110）喷嘴出口（120），用于将蒸发的材料释放到真空室; 和沿流动方向（111）从所述喷嘴入口（110）延伸到所述喷嘴出口（120）的喷嘴通道（130），其中所述喷嘴通道（130）包括具有孔径角度的出口部分（131）），其在流动方向（111）上连续增加。此外，提供了具有这种喷嘴的材料沉积装置，具有材料源装置的真空沉积系统以及用于沉积蒸发材料的方法。

8. 发明申请

WO2018010770A1 SPUTTER DEPOSITION SOURCE, SPUTTER DEPOSITION APPARATUS AND METHOD OF OPERATING A SPUTTER DEPOSITION SOURCE 审中-公开
标题翻译：溅射沉积源，溅射沉积装置和操作溅射沉积源的方法
公开(公告)号：WO2018010770A1
公开(公告)日：2018-01-18
申请号：PCT/EP2016/066551
申请日：2016-07-12
申请人： APPLIED MATERIALS, INC. , LINDENBERG, Ralph , BUSCHBECK, Wolfgang , LOPP, Andreas
发明人： LINDENBERG, Ralph , BUSCHBECK, Wolfgang , LOPP, Andreas
IPC分类号： H01J37/34
摘要： According to one aspect of the present disclosure, a sputter deposition source (100) with at least one electrode assembly (120) configured for two-side sputter deposition is provided. The electrode assembly (120) comprises: a cathode (125) for providing a target material to be deposited, wherein the cathode is configured for generating a first plasma (131) on a first deposition side (10) and a second plasma (141) on a second deposition side (11) opposite to the first deposition side (10); and an anode assembly (130) with at least one first anode (132) arranged on the first deposition side (10) for influencing the first plasma and at least one second anode (142) arranged on the second deposition side (11) for influencing the second plasma. According to a second aspect, a deposition apparatus with a sputter deposition source (100) is provided. Further, methods of operating a sputter deposition source are provided.
摘要翻译：根据本公开的一个方面，提供了具有至少一个配置用于双面溅射沉积的电极组件（120）的溅射沉积源（100）。所述电极组件（120）包括：用于提供待沉积的靶材料的阴极（125），其中所述阴极被配置用于在第一沉积侧（10）和第二等离子体（141）上产生第一等离子体（131）在与所述第一沉积侧（10）相对的第二沉积侧（11）上; 和阳极组件（130），其具有布置在第一沉积侧（10）上用于影响第一等离子体的至少一个第一阳极（132）和布置在第二沉积侧（11）上的至少一个第二阳极（142），用于影响第二个等离子体。根据第二方面，提供了一种具有溅射沉积源（100）的沉积设备。此外，提供了操作溅射沉积源的方法。

9. 发明申请

WO2016095997A1 MATERIAL DEPOSITION ARRANGEMENT, A VACUUM DEPOSITION SYSTEM AND METHOD FOR DEPOSITING MATERIAL 审中-公开
标题翻译：材料沉积安排，真空沉积系统和沉积材料的方法
公开(公告)号：WO2016095997A1
公开(公告)日：2016-06-23
申请号：PCT/EP2014/078299
申请日：2014-12-17
申请人： APPLIED MATERIALS, INC. , GEBELE, Thomas , SCHÜSSLER, Uwe , DIEGUEZ-CAMPO, Jose Manuel , LOPP, Andreas
发明人： GEBELE, Thomas , SCHÜSSLER, Uwe , DIEGUEZ-CAMPO, Jose Manuel , LOPP, Andreas
IPC分类号： C23C14/12 , C23C14/24
CPC分类号： C23C14/243 , C23C14/042 , C23C14/12 , C23C14/24 , H01L51/001 , H01L51/0011
摘要： A material deposition arrangement (100) for depositing evaporated material on a substrate (121) in a vacuum chamber (110) is described. The material deposition arrangement includes a crucible (102; 102a; 102b) for providing material to be evaporated; a linear distribution pipe (106; 106a; 106b) being in fluid communication with the crucible (102; 102a; 102b); and a plurality of nozzles in the distribution pipe (106; 106a; 106b) for guiding the evaporated material into the vacuum chamber (110). Each nozzle (400) may have a nozzle inlet (401) for receiving the evaporated material, a nozzle outlet (403) for releasing the evaporated material to the vacuum chamber, and a nozzle passage (402) between the nozzle inlet (401) and the nozzle outlet (403). The nozzle passage (402) of at least one of the plurality of nozzles includes a first section (410) having a first section length (412) and a first section size (411), and a second section (420) having a second section length (421) and a second section size (421). The ratio of the second section size (421) to the first section size (411) is between 2 and 10.
摘要翻译：描述了用于在真空室（110）中的衬底（121）上沉积蒸发材料的材料沉积装置（100）。材料沉积装置包括用于提供待蒸发的材料的坩埚（102; 102a; 102b）与坩埚（102; 102a; 102b）流体连通的线性分配管（106; 106a; 106b）; 以及分配管道（106; 106a; 106b）中的多个喷嘴，用于将蒸发的材料引导到真空室（110）中。每个喷嘴（400）可以具有用于接收蒸发的材料的喷嘴入口（401），用于将蒸发的材料释放到真空室的喷嘴出口（403）和喷嘴入口（401）和喷嘴出口（403）。多个喷嘴中的至少一个喷嘴的喷嘴通道（402）包括具有第一部分长度（412）和第一部分尺寸（411）的第一部分（410）和具有第二部分长度（421）和第二部分尺寸（421）。第二部分尺寸（421）与第一部分尺寸（411）的比率在2和10之间。

10. 发明申请

WO2016091303A1 MASK ARRANGEMENT FOR MASKING A SUBSTRATE IN A PROCESSING CHAMBER 审中-公开
标题翻译：用于在加工室中掩埋基材的掩模布置
公开(公告)号：WO2016091303A1
公开(公告)日：2016-06-16
申请号：PCT/EP2014/077257
申请日：2014-12-10
申请人： APPLIED MATERIALS, INC. , BANGERT, Stefan , VERCESI, Tommaso , GISLON, Daniele , HEIMEL, Oliver , LOPP, Andreas , HAAS, Dieter
发明人： BANGERT, Stefan , VERCESI, Tommaso , GISLON, Daniele , HEIMEL, Oliver , LOPP, Andreas , HAAS, Dieter
IPC分类号： C23C14/04 , C23C16/04 , C23C16/458
CPC分类号： C23C14/042 , C23C16/042 , C23C16/4587
摘要： A mask arrangement (100) for masking a substrate (10) in a processing chamber is provided. The mask arrangement (100) includes a mask frame (110) having one or more frame elements (112, 114, 116, 118) and is configured to support a mask device (120), wherein the mask device (120) is connectable to the mask frame (110); and at least one actuator (130) connectable to at least one frame element (112) of the one or more frame elements (112, 114, 116, 118), wherein the at least one actuator (130) is configured to apply a force to the at least one frame element (112).
摘要翻译：提供了用于掩蔽处理室中的基板（10）的掩模布置（100）。掩模装置（100）包括具有一个或多个框架元件（112,114,116,118）的掩模框架（110），并且被配置为支撑掩模装置（120），其中所述掩模装置（120）可连接到面罩框架（110）; 以及可连接到所述一个或多个框架元件（112,114,116,118）的至少一个框架元件（112）的至少一个致动器（130），其中所述至少一个致动器（130）构造成施加力到所述至少一个框架元件（112）。

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