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1. 发明申请

WO2005019497A2 METHODS OF REDUCING PLASMA-INDUCED DAMAGE FOR ADVANCED PLASMA CVD DIELECTRICS 审中-公开
标题翻译：降低先进等离子体CVD介质的等离子体诱导损伤的方法
公开(公告)号：WO2005019497A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/027192
申请日：2004-08-20
申请人： APPLIED MATERIALS, INC. , LI, Lihua , TANAKA, Tsutomu , HUANG, Tzu-Fang , XIA, Li-Qun , SUGIARTO, Dian , SIVARAMAKRISHNAN, Visweswaren , LEE, Peter, Wai-Man , SILVETTI, Mario, D.
发明人： LI, Lihua , TANAKA, Tsutomu , HUANG, Tzu-Fang , XIA, Li-Qun , SUGIARTO, Dian , SIVARAMAKRISHNAN, Visweswaren , LEE, Peter, Wai-Man , SILVETTI, Mario, D.
IPC分类号： C23C16/40
CPC分类号： C23C16/5096 , C23C16/401 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76801
摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.
摘要翻译：用于在基底上沉积有机硅酸盐层的方法包括在用于在包含有机硅化合物的气体混合物中沉积有机硅酸盐层的工艺顺序期间改变一个或多个工艺条件，处理室。在一个方面中，处理室中的衬底与气体分配歧管之间的距离在处理期间改变。优选地，沉积有机硅酸盐层的方法使等离子体对基材的损伤最小化。

2. 发明申请

WO2011149615A2 HYBRID HOTWIRE CHEMICAL VAPOR DEPOSITION AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS 审中-公开
标题翻译：混合热电化学蒸气沉积和等离子体增强化学蒸气沉积方法和装置
公开(公告)号：WO2011149615A2
公开(公告)日：2011-12-01
申请号：PCT/US2011/034091
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , LAKSHMANAN, Annamalai , TRAN, Truc T. , LY, Nhon , VOSKOBOYNIK, Izidor , HO, Dustin W. , TANAKA, Tsutomu
发明人： LAKSHMANAN, Annamalai , TRAN, Truc T. , LY, Nhon , VOSKOBOYNIK, Izidor , HO, Dustin W. , TANAKA, Tsutomu
IPC分类号： C23C16/44 , C23C16/455 , H01L31/18
CPC分类号： C23C16/24 , C23C16/453 , C23C16/45565 , C23C16/45587 , C23C16/505 , H01L31/075 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for producing thin films for photovoltaic (PV) devices is described. In one embodiment, an apparatus for depositing thin films on a substrate is described. The apparatus includes a chamber having a showerhead disposed in an opposing relationship to a substrate support, and at least a first gas source and a second gas source in fluid communication with a plurality of discrete reaction zones of the showerhead, the reaction zones comprising a first reaction zone contained in a space between a first side of the showerhead and the substrate support, the first reaction zone in electrical communication with a RF power supply, and a second reaction zone contained within an opposing second side of the showerhead, the second reaction zone being electrically isolated from the first reaction zone.
摘要翻译：描述了用于制造光伏（PV）装置薄膜的方法和装置。在一个实施例中，描述了用于在衬底上沉积薄膜的装置。该装置包括具有以与衬底支撑件相对的关系设置的喷头以及至少与喷头的多个离散反应区流体连通的第一气体源和第二气体源的室，所述反应区包括第一所述反应区包含在所述喷头的第一侧和所述基板支撑件之间的空间中，所述第一反应区与RF电源电连通，所述第二反应区包含在所述喷头的相对的第二侧内，所述第二反应区与第一反应区电隔离。

3. 发明申请

WO2012177293A2 TRANSMISSION LINE RF APPLICATOR FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的传输线RF应用器
公开(公告)号：WO2012177293A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/000298
申请日：2012-06-21
申请人： APPLIED MATERIALS, INC. , KUDELA, Jozef , TANAKA, Tsutomu , SORENSEN, Carl, A. , ANWAR, Suhail , WHITE, John, M. , SHINDE, Ranjit, Indrajit , CHO, Seon-Mee , TRUONG, Douglas, D.
发明人： KUDELA, Jozef , TANAKA, Tsutomu , SORENSEN, Carl, A. , ANWAR, Suhail , WHITE, John, M. , SHINDE, Ranjit, Indrajit , CHO, Seon-Mee , TRUONG, Douglas, D.
IPC分类号： H05H1/46 , H01P3/10 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/3222 , H05H2001/463
摘要： A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.
摘要翻译：用于将RF功率耦合到等离子体室中的等离子体的传输线RF施加装置和方法。该装置包括内部导体和一个或两个外部导体。一个或两个外部导体中的每一个的主要部分包括在外部导体的内表面和外表面之间延伸的多个孔。

4. 发明申请

WO2005093719A1 PERPENDICULAR MAGNETIC RECORDING MEDIUM USING SOFT MAGNETIC LAYER WHICH SUPPRESSES NOISE GENERATION, AND PERPENDICULAR MAGNETIC RECORDING APPARATUS THEREWITH 审中-公开
标题翻译：使用软磁体层抑制噪声产生的全磁性记录介质，及其周期性磁记录装置
公开(公告)号：WO2005093719A1
公开(公告)日：2005-10-06
申请号：PCT/JP2005/006228
申请日：2005-03-24
申请人： KABUSHIKI KAISHA TOSHIBA , SHOWA DENKO K.K. , NAKAMURA, Futoshi , TANAKA, Tsutomu , AOYAGI, Yuka , SHIMIZU, Kenji , SAKAI, Hiroshi , SAKAWAKI, Akira
发明人： NAKAMURA, Futoshi , TANAKA, Tsutomu , AOYAGI, Yuka , SHIMIZU, Kenji , SAKAI, Hiroshi , SAKAWAKI, Akira
IPC分类号： G11B5/667
CPC分类号： G11B5/66 , B82Y25/00 , G11B5/667 , H01F10/08 , H01F10/3222
摘要： The magnetic recording medium of the present invention has a substrate, a perpendicular magnetic recording layer, and a soft magnetic layer formed therebetween, having a thickness of less than 100 nm, the soft magnetic layer having a magnetic anisotropy in a surface direction, and product Bs Hc, which is a production of a saturation magnetic flux density Bs and a coercive force Hc, of not less than 79 T Aim (10 kG Oe). By making the thickness of the soft magnetic layer into the above-mentioned range, the magnetic anisotropy in surface direction can be stabilized. magnetostatic energy can be increased sufficiently by making the Bs • He the above-mentioned range. Therefore, generating of the magnetic wall in the soft magnetic layer can be suppressed, the noise generating from the soft magnetic layer can be suppressed, and a high-density recording is enabled.
摘要翻译：本发明的磁记录介质具有厚度小于100nm的基板，垂直磁记录层和形成在其间的软磁层，软磁层在表面方向上具有磁各向异性，产品 BsHc，其为饱和磁通密度Bs和矫顽力Hc的不小于79T目标（10kGOe）的产生。通过使软磁性层的厚度达到上述范围，可以使表面方向的磁各向异性稳定。可以通过使Bs充分增加静磁能。他上述范围。因此，可以抑制软磁层中的磁壁的产生，能够抑制从软磁性层产生的噪声，能够实现高密度记录。

5. 发明申请

WO2005122148A1 MAGNETIC RECORDING AND REPRODUCING DEVICE 审中-公开
标题翻译：磁记录和再现设备
公开(公告)号：WO2005122148A1
公开(公告)日：2005-12-22
申请号：PCT/JP2005/010743
申请日：2005-06-07
申请人： SHOWA DENKO K.k. , KABUSHIKI KAISHA TOSHIBA , OGIWARA, Hideo , TANAKA, Tsutomu , OSAWA, Hirochi
发明人： OGIWARA, Hideo , TANAKA, Tsutomu , OSAWA, Hirochi
IPC分类号： G11B5/73
CPC分类号： G11B5/7315 , G11B5/64
摘要： A magnetic recording and reproducing device includes a rectangular box housing having an upper opening and storing therein a magnetic recording medium that has a substrate of silicon and measures 50 mm or less in diameter, a spindle motor that serves as drive means for supporting and rotating the magnetic recording medium, a head suspension assembly that includes a magnetic head adapted to record and reproduce a magnetic signal in the magnetic recording medium and supports the magnetic head movably relative to the magnetic recording medium, a voice coil motor that rotates and positions the head suspension assembly and a printed circuit substrate that controls motion of the spindle motor and voice coil motor; and a top cover for blocking the upper opening of the housing.
摘要翻译：一种磁记录和再现装置，包括具有上开口的矩形盒壳体，其中存储有具有硅基底并且尺寸为50mm或更小直径的磁记录介质，主轴电机用作驱动装置，用于支撑和旋转磁记录介质，头悬挂组件，其包括适于在磁记录介质中记录和再现磁信号并相对于磁记录介质可移动地支撑磁头的磁头;旋转并定位磁头悬架的音圈电机组件和控制主轴电机和音圈电机运动的印刷电路基板; 以及用于阻挡壳体的上部开口的顶盖。

6. 发明申请

WO2019118808A1 SHAPED ELECTRODES FOR IMPROVED PLASMA EXPOSURE FROM VERTICAL PLASMA SOURCE 审中-公开
公开(公告)号：WO2019118808A1
公开(公告)日：2019-06-20
申请号：PCT/US2018/065612
申请日：2018-12-14
申请人： APPLIED MATERIALS, INC.
发明人： BERA, Kallol , DZILNO, Dmitry A. , SUBRAMANI, Anantha K. , FORSTER, John C. , TANAKA, Tsutomu
IPC分类号： H01J37/32 , C23C16/50
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/3255 , H01J37/32577 , H01J37/32779 , H01J37/32816
摘要： Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

7. 发明申请

WO2017127849A1 DUAL-FEED TUNABLE PLASMA SOURCE 审中-公开
标题翻译：双馈可变等离子源
公开(公告)号：WO2017127849A1
公开(公告)日：2017-07-27
申请号：PCT/US2017/014694
申请日：2017-01-24
申请人： APPLIED MATERIALS, INC.
发明人： HAMMOND, Edward P.,IV , TANAKA, Tsutomu , SUBRAMANI, Anantha K.
IPC分类号： H01L21/02 , H01L21/205 , H05H1/46 , H01J37/32 , H01J49/10
CPC分类号： H01J37/32091 , C23C16/45525 , C23C16/4554 , C23C16/50 , C23C16/505 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32577 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069
摘要： A plasma source assembly for use with a processing chamber includes an inner RF feed connected to the inner edge of the electrode and an outer RF feed connected to the outer edge of the electrode. A capacitor is connected between the inner edge of the electrode and electrical ground to modulate the voltage of across the length of the electrode.
摘要翻译：与处理室一起使用的等离子体源组件包括连接到电极的内部边缘的内部RF馈送器和连接到电极的外部边缘的外部RF馈送器。电容器连接在电极的内部边缘和电气地之间，以调节电极长度上的电压。

8. 发明申请

WO2011156534A2 MULTIPLE FREQUENCY POWER FOR PLASMA CHAMBER ELECTRODE 审中-公开
标题翻译：用于等离子体室电极的多个频率功率
公开(公告)号：WO2011156534A2
公开(公告)日：2011-12-15
申请号：PCT/US2011/039689
申请日：2011-06-08
申请人： APPLIED MATERIALS, INC.
发明人： HAMMOND, Edward, P., IV , TANAKA, Tsutomu , BOITNOTT, Christopher , KUDELA, Jozef
IPC分类号： H05H1/46 , H05H1/34 , H01L21/205
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32137
摘要： First through fifth RF power signals are respectively coupled to first through fifth RF connection points on an electrode of a plasma chamber. The first, second and third RF power signals have distinct first, second and third frequencies, respectively. The second and fourth RF power signals have the same frequency and opposite phase. The third and fifth RF power signals have the same frequency and opposite phase. The second through fifth RF connection points are geometrically arranged as four successive vertices of a quadrilateral convex polygon. The first RF connection point is closer to the center of the electrode. The center strong spatial distribution of the electric field produced by the first RF power signal is offset by the center weak spatial distribution of the electric field produced by the second through fifth RF power signals. An alternative embodiment omits the third and fifth RF power signals and the third and fifth RF connection points.
摘要翻译：第一至第五RF功率信号分别耦合到等离子体室的电极上的第一至第五RF连接点。第一，第二和第三RF功率信号分别具有不同的第一，第二和第三频率。第二和第四RF功率信号具有相同的频率和相位相位。第三和第五RF功率信号具有相同的频率和相位相位。第二至第五RF连接点在几何上被布置为四边形凸多边形的四个连续顶点。第一RF连接点更靠近电极的中心。由第一RF功率信号产生的电场的中心强空间分布由第二至第五RF功率信号产生的电场的中心弱空间分布抵消。替代实施例省略了第三和第五RF功率信号以及第三和第五RF连接点。

9. 发明申请

WO2022055730A1 SINGLE CHAMBER FLOWABLE FILM FORMATION AND TREATMENTS 审中-公开
公开(公告)号：WO2022055730A1
公开(公告)日：2022-03-17
申请号：PCT/US2021/048125
申请日：2021-08-30
申请人： APPLIED MATERIALS, INC.
发明人： PAUL, Khokan Chandra , FISCHBACH, Adam J. , TANAKA, Tsutomu , LAI, Canfeng
IPC分类号： H01L21/3205 , H01L21/321 , C23C16/24 , C23C16/509 , C23C16/56 , H01J37/32
摘要： Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The semiconductor substrate may be housed in a processing region of a semiconductor processing chamber. The processing region may be defined between a faceplate and a substrate support on which the semiconductor substrate is seated. The methods may include forming a treatment plasma within the processing region of the semiconductor processing chamber. The treatment plasma may be formed at a first power level from a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The methods may include densifying the flowable film within the feature defined within the semiconductor substrate with plasma effluents of the treatment plasma.

10. 发明申请

WO2015122977A1 EXTENDED PRECURSOR GAS INJECTION METHOD 审中-公开
标题翻译：扩展前期气体注入方法
公开(公告)号：WO2015122977A1
公开(公告)日：2015-08-20
申请号：PCT/US2015/010876
申请日：2015-01-09
申请人： APPLIED MATERIALS, INC.
发明人： HAMMOND, Edward P., IV , TANAKA, Tsutomu , RUHLAND, Eric , LANE, Christopher T. , PONNEKANTI, Hari K.
IPC分类号： H01L21/02
CPC分类号： C23C16/54 , C23C16/4401 , C23C16/455 , C23C16/45517 , C23C16/45563 , C23C16/45578 , C23C16/509 , H01J37/3244 , H01J37/32449 , H01J37/32651 , H01J37/32899 , H01J37/34 , H01J37/3417
摘要： Embodiments of the present disclosure relate to delivering precursors through a linear plasma source in a processing chamber in in-line processing tools. In one embodiment of the present disclosure, a first processing gas is introduced closer to a substrate plane, where processing, such as depositing a dielectric film, is meant to occur, than to a nozzle outlet, where a second processing gas is introduced.
摘要翻译：本公开的实施例涉及通过在线处理工具中的处理室中的线性等离子体源传送前体。在本公开的一个实施例中，第一处理气体被引入更接近衬底平面，其中意图发生诸如沉积介电膜的处理，而不是引入第二处理气体的喷嘴出口。

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