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1. 发明申请

WO2011146571A2 TIGHTLY-FITTED CERAMIC INSULATOR ON LARGE-AREA ELECTRODE 审中-公开
标题翻译：大面积电极上的贴合陶瓷绝缘子
公开(公告)号：WO2011146571A2
公开(公告)日：2011-11-24
申请号：PCT/US2011/036932
申请日：2011-05-18
申请人： APPLIED MATERIALS, INC. , KUDELA, Jozef , BAEK, Jonghoon , WHITE, John M. , TINER, Robin L. , ANWAR, Suhail
发明人： KUDELA, Jozef , BAEK, Jonghoon , WHITE, John M. , TINER, Robin L. , ANWAR, Suhail
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

2. 发明申请

WO2010042860A2 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：WO2010042860A2
公开(公告)日：2010-04-15
申请号：PCT/US2009/060230
申请日：2009-10-09
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
发明人： WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , KUDELA, Jozef , BAEK, Jonghoon , CHEN, Jrjyan Jerry , MCPHERSON, Stephen , TINER, Robin L.
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

3. 发明申请

WO2011041087A2 INDUCTIVELY-COUPLED PLASMA (ICP) RESONANT SOURCE ELEMENT 审中-公开
标题翻译：电感耦合等离子体（ICP）谐振源元件
公开(公告)号：WO2011041087A2
公开(公告)日：2011-04-07
申请号：PCT/US2010/048573
申请日：2010-09-13
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , BAEK, Jonghoon , TANAKA, Tsutomu (Tom)
发明人： WHITE, John M. , BAEK, Jonghoon , TANAKA, Tsutomu (Tom)
IPC分类号： H05H1/46 , H05H1/34
CPC分类号： H01J37/3211 , H01J37/321 , H05H1/30 , H05H1/46 , H05H2001/4667
摘要： The present invention generally relates to an inductive-capacitive element that may be used to form a single coil within an inductively-coupled plasma apparatus. One or more elements may be used and coupled together to collectively form the coil. The coil may be coupled to a single match network. Therefore, a single input and a single output may be used for the coil so that fewer penetrations through the chamber walls may be used. The individual inductive-capacitive elements may comprise two overlapping tubes with an insulating material disposed therebetween in an overlapping area. The overlapping area forms a capacitor segment and the non-overlapping area forms an inductor segment. The tubes and insulating material may be welded together to create a resonant circuit with an impedance of zero. Thus, the inductance of the coil is low, only two wall penetrations are utilized and a single match network is utilized.
摘要翻译：本发明一般涉及可用于在电感耦合等离子体装置内形成单个线圈的电感电容元件。可以使用一个或多个元件并将其耦合在一起以共同形成线圈。线圈可以耦合到单个匹配网络。因此，单个输入和单个输出可以用于线圈，使得可以使用通过室壁的较少穿透。各个电感电容元件可以包括两个重叠的管，其中在重叠区域之间设置有绝缘材料。重叠区域形成电容器段，并且非重叠区域形成电感器段。管和绝缘材料可以焊接在一起以产生阻抗为零的谐振电路。因此，线圈的电感低，仅使用两个壁穿透，并且使用单个匹配网络。

4. 发明申请

WO2011094311A2 BALANCING RF BRIDGE ASSEMBLY 审中-公开
标题翻译：平衡射频桥组件
公开(公告)号：WO2011094311A2
公开(公告)日：2011-08-04
申请号：PCT/US2011/022577
申请日：2011-01-26
申请人： APPLIED MATERIALS, INC. , BAEK, Jonghoon , KIM, Sam H. , PARK, Beom Soo
发明人： BAEK, Jonghoon , KIM, Sam H. , PARK, Beom Soo
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/505
摘要： Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.
摘要翻译：本文公开的实施例一般涉及PECVD装置。当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。为了确保电流和电压在多个位置处基本相同，RF桥组件可以在刚刚连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。因此，在多个位置处对电极施加基本相同的电流和电压。

5. 发明申请

WO2011100200A2 ANTI-ARC ZERO FIELD PLATE 审中-公开
标题翻译：反弧零场板
公开(公告)号：WO2011100200A2
公开(公告)日：2011-08-18
申请号：PCT/US2011/023934
申请日：2011-02-07
申请人： APPLIED MATERIALS, INC. , BAEK, Jonghoon , SUAREZ, Edwin C. , TANAKA, Tsutomu (Tom) , HAMMOND, Edward P., IV , OH, Jeonghoon
发明人： BAEK, Jonghoon , SUAREZ, Edwin C. , TANAKA, Tsutomu (Tom) , HAMMOND, Edward P., IV , OH, Jeonghoon
IPC分类号： C23C16/44 , C23C16/50 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244
摘要： Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
摘要翻译：本发明的实施例总体上涉及用于减少衬底处理室中的电弧和寄生等离子体的设备。该设备通常包括处理室，该处理室具有设置在其中的衬底支撑件，背板和喷头。喷头悬挂将背板电连接到喷头。导电支架联接到背板并与喷头间隔开。导电托架可以包括板，下部，上部和垂直延伸部。导电支架接触电气隔离器。

6. 发明申请

WO2015069428A1 PARTICLE GENERATION SUPPRESSOR BY DC BIAS MODULATION 审中-公开
标题翻译：颗粒生成抑制剂通过直流偏置调制
公开(公告)号：WO2015069428A1
公开(公告)日：2015-05-14
申请号：PCT/US2014/060768
申请日：2014-10-15
申请人： APPLIED MATERIALS, INC.
发明人： BAEK, Jonghoon , PARK, Soonam , CHEN, Xinglong , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/02
CPC分类号： H01J37/32082 , C23C16/4401 , C23C16/4404 , C23C16/503 , C23C16/509 , C23C16/52 , H01J37/32091 , H01J37/32146 , H01J37/32532 , H01J37/3255 , H01J37/32568 , H01J37/32697 , H01J2237/334
摘要： Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, the methods generally includes generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma. Minimizing the electrical potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the ions in the sheath region of the electrodes is reduced and the collision force of the ions with the protective coating layer on the electrodes is minimized. Therefore, particle generation on the substrate surface is reduced.
摘要翻译：本公开的实施例一般涉及用于减少处理室中的颗粒产生的装置和方法。在一个实施例中，所述方法通常包括在动力顶部电极和接地底部电极之间产生等离子体，其中顶部电极平行于底部电极，并且在膜沉积期间向动力顶部电极施加恒定的零直流偏置电压以最小化上电极和等离子体之间的电位差和/或接地的底部电极和等离子体之间的电位差的过程。使等离子体和电极之间的电位差最小化减少了由于电极的鞘区域中的离子的加速度降低并且电极上的保护涂层的离子的碰撞力最小化的颗粒产生。因此，衬底表面上的颗粒产生减少。

7. 发明申请

WO2020112329A1 FILM STACK OVERLAY IMPROVEMENT FOR 3D NAND APPLICATION 审中-公开
公开(公告)号：WO2020112329A1
公开(公告)日：2020-06-04
申请号：PCT/US2019/060610
申请日：2019-11-08
申请人： APPLIED MATERIALS, INC.
发明人： HAN, Xinhai , PADHI, Deenesh , BENJAMIN RAJ, Daemian Raj , ENSLOW, Kristopher , WANG, Wenjiao , OGATA, Masaki , ADDEPALLI, Sai Susmita , JORAPUR, Nikhil Sudhindrarao , CHICHKANOFF, Gregory Eugene , SRIVASTAVA, Shailendra , BAEK, Jonghoon , IBRAHIMI, Zakaria , ROCHA-ALVAREZ, Juan Carlos , GUNG, Tza-Jing
IPC分类号： H01J37/32
摘要： Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

8. 发明申请

WO2020106408A1 DEVICE AND METHOD FOR TUNING PLASMA DISTRIBUTION USING PHASE CONTROL 审中-公开
公开(公告)号：WO2020106408A1
公开(公告)日：2020-05-28
申请号：PCT/US2019/057949
申请日：2019-10-24
申请人： APPLIED MATERIALS, INC.
发明人： LI, Xiaopu , BERA, Kallol , HAMMOND, Edward P., IV , BAEK, Jonghoon , BANSAL, Amit Kumar , MA, Jun , KOBAYASHI, Satoru
IPC分类号： H01J37/32 , H01L21/02
摘要： Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

9. 发明申请

WO2011041332A3 OFF-CENTER GROUND RETURN FOR RF-POWERED SHOWERHEAD 审中-公开
公开(公告)号：WO2011041332A3
公开(公告)日：2011-04-07
申请号：PCT/US2010/050602
申请日：2010-09-28
申请人： APPLIED MATERIALS, INC.
发明人： BAEK, Jonghoon , PARK, Beom, Soo , KIM, Sam, Hyungsam
IPC分类号： H01L21/205 , H01L21/3065
摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

10. 发明申请

WO2019169102A1 ELECTROSTATIC CHUCK WITH MULTIPLE RADIO FREQUENCY MESHES TO CONTROL PLASMA UNIFORMITY 审中-公开
公开(公告)号：WO2019169102A1
公开(公告)日：2019-09-06
申请号：PCT/US2019/020001
申请日：2019-02-28
申请人： APPLIED MATERIALS, INC.
发明人： HAMMOND, IV, Edward P. , BAEK, Jonghoon
IPC分类号： H01L21/683 , H02N13/00 , B23Q3/15 , H05H1/46 , H01J37/32 , H01L21/67 , H01L21/02
摘要： The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

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