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1. 发明申请

WO2020118090A1 CORROSION RESISTANT GROUND SHIELD OF PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2020118090A1
公开(公告)日：2020-06-11
申请号：PCT/US2019/064747
申请日：2019-12-05
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , HE, Xiao Ming , SUN, Jennifer Y. , WU, Xiaowei , KALITA, Laksheswar , PARK, Soonam
IPC分类号： H01L21/687 , H01L21/67 , H01L21/02 , H01L23/373
摘要： A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

2. 发明申请

WO2020060722A1 HIGH TEMPERATURE RF HEATER PEDESTALS 审中-公开
公开(公告)号：WO2020060722A1
公开(公告)日：2020-03-26
申请号：PCT/US2019/048099
申请日：2019-08-26
申请人： APPLIED MATERIALS, INC.
发明人： PARK, Soonam , BENJAMINSON, David , WANG, Xikun , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/683 , H01L21/687 , H01L21/67 , H01J37/32
摘要： Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.

3. 发明申请

WO2017201307A1 SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION 审中-公开
标题翻译：用于改进的半导体蚀刻和部件保护的系统和方法
公开(公告)号：WO2017201307A1
公开(公告)日：2017-11-23
申请号：PCT/US2017/033362
申请日：2017-05-18
申请人： APPLIED MATERIALS, INC.
发明人： TAN, Tien Fak , LOH, Lok Kee , LUBOMIRSKY, Dmitry , JUNG, Soonwook , CHOY, Martin Yue , PARK, Soonam
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32091 , H01J37/32357 , H01J37/3244 , H01J37/32458 , H01J37/32467 , H01J37/32513 , H01J37/32807 , H01J2237/334 , H01L21/3065 , H01L21/6719
摘要： Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.
摘要翻译：半导体系统和方法可以包括半导体处理室，该半导体处理室具有限定对半导体处理室的入口的气箱。腔室可以包括间隔件，该间隔件的特征在于气体盒与第一表面连接的第一表面，并且间隔件可以在第一表面的内部部分上限定凹陷壁架。腔室可以包括支撑托架，所述支撑托架位于沿着间隔件的第二表面延伸的凹陷壁架上。该室还可以包括一个位于支架上的气体分配板。

4. 发明申请

WO2017039920A1 PROCESS CHAMBER FOR CYCLIC AND SELECTIVE MATERIAL REMOVAL AND ETCHING 审中-公开
标题翻译：循环过程室和选择性材料的去除和蚀刻
公开(公告)号：WO2017039920A1
公开(公告)日：2017-03-09
申请号：PCT/US2016/045202
申请日：2016-08-02
申请人： APPLIED MATERIALS, INC.
发明人： TRAN, Toan Q. , PARK, Soonam , KIM, Junghoon , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/02 , H01L21/205 , H05H1/46 , H01L21/683
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/32449 , H01J37/32834 , H01L21/311 , H01L21/67069 , H01L21/6831
摘要： A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
摘要翻译：本文描述了用于衬底蚀刻的方法和设备。本文所述的处理室包括源模块，处理模块，流模块和排气模块。 RF源可以耦合到腔室，并且可以在源模块中产生远程等离子体，并且可以在过程模块中产生直接等离子体。所描述的循环蚀刻工艺可以使用交替的自由基和直接等离子体蚀刻衬底。

5. 发明申请

WO2020146069A1 CERAMIC SHOWERHEADS WITH CONDUCTIVE ELECTRODES 审中-公开
公开(公告)号：WO2020146069A1
公开(公告)日：2020-07-16
申请号：PCT/US2019/064834
申请日：2019-12-06
申请人： APPLIED MATERIALS, INC. , TAN, Tien Fak , SINGH, Saravjeet
发明人： TAN, Tien Fak , SINGH, Saravjeet , KALITA, Laksheswar , PARK, Soonam , LUBOMIRSKY, Dmitry , LOH, LokKee , KIM, Tae Won
IPC分类号： H01L21/67 , H01L21/3065
摘要： Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

6. 发明申请

WO2020055565A1 SEMICONDUCTOR SUBSTRATE SUPPORTS WITH EMBEDDED RF SHIELD 审中-公开
公开(公告)号：WO2020055565A1
公开(公告)日：2020-03-19
申请号：PCT/US2019/047690
申请日：2019-08-22
申请人： APPLIED MATERIALS, INC.
发明人： BENJAMINSON, David , GRACE, Michael , PARK, Soonam , LUBOMIRSKY, Dmitry , CHO, Jaeyong , KALNIN, Nikolai , KALUARACHCHI, Don Channa K
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H01J37/32 , H05H1/46
摘要： Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.

7. 发明申请

WO2019169016A1 MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT 审中-公开
公开(公告)号：WO2019169016A1
公开(公告)日：2019-09-06
申请号：PCT/US2019/019873
申请日：2019-02-27
申请人： APPLIED MATERIALS, INC.
发明人： CHO, Tae Seung , JUNG, Soonwook , KIM, Junghoon , KOBAYASHI, Satoru , SCHATZ, Kenneth D. , PARK, Soonam , LUBOMIRSKY, Dmitry
IPC分类号： H01J37/32
摘要： Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

8. 发明申请

WO2016153757A1 PLASMA REACTOR HAVING DIGITAL CONTROL OVER ROTATION FREQUENCY OF A MICROWAVE FIELD WITH DIRECT UP-CONVERSION 审中-公开
标题翻译：具有直接上转换的微波场的旋转频率的数字控制等离子体反应器
公开(公告)号：WO2016153757A1
公开(公告)日：2016-09-29
申请号：PCT/US2016/020585
申请日：2016-03-03
申请人： APPLIED MATERIALS, INC.
发明人： KOBAYASHI, Satoru , SUGAI, Hideo , PARK, Soonam , RAMASWAMY, Kartik , LUBOMIRSKY, Dmitry
IPC分类号： H01J37/32
CPC分类号： H01J37/32192 , H01J37/3222 , H01J37/32302 , H01J37/32311
摘要： A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.
摘要翻译：用于处理工件的等离子体反应器具有使用直接数字上转换的数字合成旋转频率的微波源和用于控制旋转频率的用户界面。

9. 发明申请

WO2019018019A2 OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING 审中-公开
公开(公告)号：WO2019018019A2
公开(公告)日：2019-01-24
申请号：PCT/US2018/026812
申请日：2018-04-10
申请人： APPLIED MATERIALS, INC.
发明人： CHO, Tae Seung , PARK, Soonam , KIM, Junghoon , LUBOMIRSKY, Dmitry , VENKATARAMAN, Shankar
IPC分类号： H01L21/66 , G01N21/73 , H01L21/3065 , H01L21/67 , H01J37/32
摘要： Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

10. 发明申请

WO2017201309A1 SYSTEMS AND METHODS FOR IMPROVED SEMICONDUCTOR ETCHING AND COMPONENT PROTECTION 审中-公开
标题翻译：用于改进的半导体蚀刻和部件保护的系统和方法
公开(公告)号：WO2017201309A1
公开(公告)日：2017-11-23
申请号：PCT/US2017/033367
申请日：2017-05-18
申请人： APPLIED MATERIALS, INC.
发明人： TAN, Tien Fak , LOH, Lok Kee , LUBOMIRSKY, Dmitry , JUNG, Soonwook , CHOY, Martin Yue , PARK, Soonam
IPC分类号： H01L21/3065 , H01L21/683 , H05H1/46 , H01L21/687
摘要： A semiconductor systems and methods may include a semiconductor processing chamber having a gas box providing access to the semiconductor processing chamber. The chamber may include a first annular support contacting the gas box at a first surface of the first annular support, wherein the first annular support and the gas box each define a portion of a first channel located at the interface of the gas box and the first annular support; and a first gas distribution plate seated within the first channel. The chamber may also include a second annular support contacting the first annular support at a second surface of the first annular support opposite the first surface of the first annular support, wherein the second annular support at least partially defines a second channel located about an interior region of the semiconductor processing chamber; and a second gas distribution plate seated within the second channel, wherein the first gas distribution plate and the second gas distribution plate comprise quartz.
摘要翻译：半导体系统和方法可以包括半导体处理腔室，该半导体处理腔室具有提供对半导体处理腔室的入口的气体箱。所述腔室可以包括在所述第一环形支撑件的第一表面处接触所述气箱的第一环形支撑件，其中所述第一环形支撑件和所述气箱各自限定位于所述气箱与所述第一环形支撑件的界面处的第一通道的一部分，环形支撑; 以及位于第一通道内的第一气体分配板。腔室还可包括第二环形支撑件，该第二环形支撑件在第一环形支撑件的与第一环形支撑件的第一表面相对的第二表面处接触第一环形支撑件，其中第二环形支撑件至少部分地限定第二通道，该第二通道位于内部区域的半导体处理室; 和位于第二通道内的第二气体分配板，其中第一气体分配板和第二气体分配板包括石英。

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