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    • 3. 发明申请
    • SPUTTER DEPOSITION SOURCE, SPUTTER DEPOSITION APPARATUS AND METHOD OF OPERATING A SPUTTER DEPOSITION SOURCE
    • 溅射沉积源,溅射沉积装置和操作溅射沉积源的方法
    • WO2018010770A1
    • 2018-01-18
    • PCT/EP2016/066551
    • 2016-07-12
    • APPLIED MATERIALS, INC.LINDENBERG, RalphBUSCHBECK, WolfgangLOPP, Andreas
    • LINDENBERG, RalphBUSCHBECK, WolfgangLOPP, Andreas
    • H01J37/34
    • According to one aspect of the present disclosure, a sputter deposition source (100) with at least one electrode assembly (120) configured for two-side sputter deposition is provided. The electrode assembly (120) comprises: a cathode (125) for providing a target material to be deposited, wherein the cathode is configured for generating a first plasma (131) on a first deposition side (10) and a second plasma (141) on a second deposition side (11) opposite to the first deposition side (10); and an anode assembly (130) with at least one first anode (132) arranged on the first deposition side (10) for influencing the first plasma and at least one second anode (142) arranged on the second deposition side (11) for influencing the second plasma. According to a second aspect, a deposition apparatus with a sputter deposition source (100) is provided. Further, methods of operating a sputter deposition source are provided.
    • 根据本公开的一个方面,提供了具有至少一个配置用于双面溅射沉积的电极组件(120)的溅射沉积源(100)。 所述电极组件(120)包括:用于提供待沉积的靶材料的阴极(125),其中所述阴极被配置用于在第一沉积侧(10)和第二等离子体(141)上产生第一等离子体(131) 在与所述第一沉积侧(10)相对的第二沉积侧(11)上; 和阳极组件(130),其具有布置在第一沉积侧(10)上用于影响第一等离子体的至少一个第一阳极(132)和布置在第二沉积侧(11)上的至少一个第二阳极(142),用于影响 第二个等离子体。 根据第二方面,提供了一种具有溅射沉积源(100)的沉积设备。 此外,提供了操作溅射沉积源的方法。