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    • 6. 发明申请
    • DETERMINING COPPER CONCENTRATION IN SPECTRA
    • 确定光谱中的铜浓度
    • WO2008070736A1
    • 2008-06-12
    • PCT/US2007/086535
    • 2007-12-05
    • APPLIED MATERIALS, INC.BENVEGNU, Dominic J.DAVID, Jeffrey DrueSWEDEK, Boguslaw A.ZHANG, JiminLEE, Harry Q.
    • BENVEGNU, Dominic J.DAVID, Jeffrey DrueSWEDEK, Boguslaw A.ZHANG, JiminLEE, Harry Q.
    • G01N21/55G01N21/84G01B11/06
    • G01B11/0683G01N21/55
    • Methods of subtracting the copper contribution to spectra obtained from a substrate during chemical mechanical polishing are described. A method of optically determining the amount of area on a substrate that includes a non-dielectric material by making us of a broad band reflectance spectrum of the surface and in particular to determining the concentration of metal such as copper coverage on the surface of a semiconductor as it is gradually reduced during polishing so as to detect the endpoint in a semiconductor etching process. The method is directed to reliably determining the endpoint via the spectral interference pattern resulting from reflections form different dielectric layer interfaces when regions of the substrate are still covered by metal which reflects strongly over the whole wavelength range considered and which tend to mask the reflectance spectrum from the underlying dielectric layers which varies cyclically with decreasing thickness of the dielectric layers.
    • 描述了在化学机械抛光期间减去从基板获得的光谱对铜的贡献的方法。 通过使我们获得表面的宽带反射光谱,特别是确定半导体表面上的金属浓度(例如铜覆盖度)来光学地确定包括非电介质材料的衬底上的面积量的方法 因为它在抛光过程中逐渐减少,以便在半导体蚀刻工艺中检测端点。 该方法旨在通过由不同介电层界面的反射产生的光谱干涉图形可靠地确定端点,当衬底的区域仍然被在所考虑的整个波长范围内强烈反射并且倾向于掩蔽反射光谱的金属覆盖时 底层电介质层随着介电层的厚度逐渐变化而周期性变化。