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1. 发明申请

WO2013106171A1 METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION 审中-公开
标题翻译：用于分解紫外线光学元件以避免降解的方法
公开(公告)号：WO2013106171A1
公开(公告)日：2013-07-18
申请号：PCT/US2012/070396
申请日：2012-12-18
申请人： APPLIED MATERIALS, INC. , BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
发明人： BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400°C or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译：公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流过，从而从光学部件的露出表面除去碳类调味剂层。

2. 发明申请

WO2007035389A2 VACUUM REACTION CHAMBER WITH X-LAMP HEATER 审中-公开
标题翻译：真空反应室与X灯加热器
公开(公告)号：WO2007035389A2
公开(公告)日：2007-03-29
申请号：PCT/US2006/035753
申请日：2006-09-12
申请人： APPLIED MATERIALS, INC. , AL-BAYATI, Amir , D'CRUZ, Lester, A. , DEMOS, Alexandros, T. , DUBOIS, Dale, R. , ELSHEREF, Khaled, A. , IWASAKI, Naoyuki , M'SAAD, Hichem , ROCHA-ALVAREZ, Juan Carlos , SHAH, Ashish , SHIMIZU, Takashi
发明人： AL-BAYATI, Amir , D'CRUZ, Lester, A. , DEMOS, Alexandros, T. , DUBOIS, Dale, R. , ELSHEREF, Khaled, A. , IWASAKI, Naoyuki , M'SAAD, Hichem , ROCHA-ALVAREZ, Juan Carlos , SHAH, Ashish , SHIMIZU, Takashi
IPC分类号： G21G5/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

3. 发明申请

WO2009158169A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 审中-公开
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：WO2009158169A1
公开(公告)日：2009-12-30
申请号：PCT/US2009/046270
申请日：2009-06-04
申请人： APPLIED MATERIALS, INC. , YI, Sang, In , CHAN, Kelvin , NOWAK, Thomas , DEMOS, Alexandros, T.
发明人： YI, Sang, In , CHAN, Kelvin , NOWAK, Thomas , DEMOS, Alexandros, T.
IPC分类号： H01L21/00 , H01L21/02 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/4405 , H01L21/6719 , H01L21/67207
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

4. 发明申请

WO2009009267A1 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过等离子体增强化学蒸气沉积法制造具有高机械性能的超低K膜的新型硅前驱体
公开(公告)号：WO2009009267A1
公开(公告)日：2009-01-15
申请号：PCT/US2008/067487
申请日：2008-06-19
申请人： APPLIED MATERIALS, INC. , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： C07F7/00 , C07F7/08
CPC分类号： C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-CX-Si or -Si-O-(CH2)n-O-Si-. Low dielectric constant films provided herein include films that include Si-CX-Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.
摘要翻译：提供了一种在基片上沉积低介电常数膜的方法。低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

5. 发明申请

WO2012064491A2 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：降低粘结层厚度的方法，提高薄膜超低介电膜的耐损伤性
公开(公告)号：WO2012064491A2
公开(公告)日：2012-05-18
申请号：PCT/US2011/057343
申请日：2011-10-21
申请人： APPLIED MATERIALS, INC. , CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
发明人： CHHABRA, Mahendra , YIM, Kang Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/31 , H01L21/312
CPC分类号： C23C16/401 , C23C8/10 , C23C16/45523 , C23C16/56
摘要： An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity.
摘要翻译：提供了一种用于沉积超低介电常数膜堆叠的改进方法。本发明的实施例通过减小超低介电膜堆叠中的氧化物粘附层的厚度来最小化沉积超低介电常数膜堆叠的初始阶段的k（介电常数）冲击，从而降低膜的厚度不均匀性堆积小于2％。改进的方法在较低的沉积速率和较低的等离子体密度下结合较高的总流速沉积了超低介电膜堆叠中的氧化物粘附层和本体层，从而在膜沉积期间共同沉积物质的更好的填充/排序这导致较高的机械强度和较低的孔隙率。

6. 发明申请

WO2011106218A3 ULTRA LOW DIELECTRIC MATERIALS USING HYBRID PRECURSORS CONTAINING SILICON WITH ORGANIC FUNCTIONAL GROUPS BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：采用等离子体增强化学气相沉积法制备含硅有机官能团的杂化前驱体的超低介电材料
公开(公告)号：WO2011106218A3
公开(公告)日：2011-09-01
申请号：PCT/US2011/025093
申请日：2011-02-16
申请人： APPLIED MATERIALS, INC. , YIM, Kang Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang Sub , DEMOS, Alexandros, T.
IPC分类号： C23C16/18 , C23C16/30 , C23C16/50 , H01L21/205
摘要： Methods for depositing a low dielectric constant layer on a substrate are provided. In one embodiment, the method includes introducing one or more organosilicon compounds into a chamber, wherein the one or more organosilicon compounds comprise a silicon atom and a porogen component bonded to the silicon atom, reacting the one or more organosilicon compounds in the presence of RF power to deposit a low dielectric constant layer on a substrate in the chamber, and post-treating the low dielectric constant layer to substantially remove the porogen component from the low dielectric constant layer. Optionally, an inert carrier gas, an oxidizing gas, or both may be introduced into the processing chamber with the one or more organosilicon compounds. The post-treatment process may be an ultraviolet radiation cure of the deposited material. The UV cure process may be used concurrently or serially with a thermal or e-beam curing process. The low dielectric constant layers have good mechanical properties and a desirable dielectric constant.
摘要翻译：提供了用于在衬底上沉积低介电常数层的方法。在一个实施方案中，所述方法包括将一种或多种有机硅化合物引入室中，其中所述一种或多种有机硅化合物包含硅原子和与硅原子键合的致孔剂组分，使所述一种或多种有机硅化合物在RF 在腔室中的衬底上沉积低介电常数层的功率，以及后处理低介电常数层以基本上从低介电常数层去除成孔剂组分。任选地，惰性载气，氧化气体或两者可以与一种或多种有机硅化合物一起引入到处理室中。后处理过程可以是沉积材料的紫外线辐射固化。 UV固化工艺可以与热或电子束固化工艺同时使用或串行使用。低介电常数层具有良好的机械性能和理想的介电常数。

7. 发明申请

WO2010008930A3 METHODS TO PROMOTE ADHESION BETWEEN BARRIER LAYER AND POROUS LOW-K FILM DEPOSITED FROM MULTIPLE LIQUID PRECURSORS 审中-公开
公开(公告)号：WO2010008930A3
公开(公告)日：2010-01-21
申请号：PCT/US2009/049216
申请日：2009-06-30
申请人： APPLIED MATERIALS, INC. , CHAN, Kelvin , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： CHAN, Kelvin , YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/208 , H01L21/31
摘要： A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.

8. 发明申请

WO2009158180A3 PREVENTION AND REDUCTION OF SOLVENT AND SOLUTION PENETRATION INTO POROUS DIELECTRICS USING A THIN BARRIER LAYER 审中-公开
公开(公告)号：WO2009158180A3
公开(公告)日：2009-12-30
申请号：PCT/US2009/046610
申请日：2009-06-08
申请人： APPLIED MATERIALS, INC. , CHAN, Kelvin , ELSHEREF, Khaled, A. , DEMOS, Alexandros, T. , SHEK, Meiyee , LI, Lipan , XIA, Li-Qun , YIM, Kang Sub
发明人： CHAN, Kelvin , ELSHEREF, Khaled, A. , DEMOS, Alexandros, T. , SHEK, Meiyee , LI, Lipan , XIA, Li-Qun , YIM, Kang Sub
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/31
摘要： A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.

9. 发明申请

WO2005098925A1 TECHNIQUES PROMOTING ADHESION OF POROUS LOW K FILM TO UNDERLYING BARRIER LAYER 审中-公开
标题翻译：技术促进多孔低K膜粘合到相对较低的障碍层
公开(公告)号：WO2005098925A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/009969
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
发明人： SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
IPC分类号： H01L21/316
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L2221/1047
摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.
摘要翻译：通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。可以利用单独或组合的多种技术之一形成该粘附层。在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。以在沉积低K材料之前立即氧化Si前体。在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

10. 发明申请

WO2010014626A3 NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2010014626A3
公开(公告)日：2010-02-04
申请号：PCT/US2009/051983
申请日：2009-07-28
申请人： APPLIED MATERIALS, INC. , YIM, Kang, Sub , DEMOS, Alexandros, T.
发明人： YIM, Kang, Sub , DEMOS, Alexandros, T.
IPC分类号： H01L21/31 , H01L21/205
摘要： A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si-C X -Si or -Si-O-(CH 2 ) n -O-Si-. Low dielectric constant films provided herein include films that include Si-C X -Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

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