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1. 发明申请

WO2012148641A3 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS 审中-公开
标题翻译：紫外光辅助丝网印刷用于损坏的低K膜的恢复和孔密封
公开(公告)号：WO2012148641A3
公开(公告)日：2012-12-20
申请号：PCT/US2012032203
申请日：2012-04-04
申请人： APPLIED MATERIALS INC , XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
发明人： XIE BO , DEMOS ALEXANDROS T , YIM KANG SUB , NOWAK THOMAS , CHAN KELVIN
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供了修复受损低k膜的方法。在薄膜加工过程中，例如在蚀刻，灰化和平面化过程中，会发生对低k薄膜的损坏。低k膜的处理导致水存储在膜的孔隙中，并进一步在低k膜结构中形成亲水性化合物。包含紫外（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水并进一步从低k膜结构中除去亲水性化合物。

2. 发明申请

WO2008021265A3 SEMICONDUCTOR SUBSTRATE CLEANING APPARATUS 审中-公开
标题翻译：半导体基板清洗装置
公开(公告)号：WO2008021265A3
公开(公告)日：2008-10-23
申请号：PCT/US2007017837
申请日：2007-08-10
申请人： APPLIED MATERIALS INC , TANG JIANSHE , LU WEI , XIE BO , LI FRED , KO ALEX
发明人： TANG JIANSHE , LU WEI , XIE BO , LI FRED , KO ALEX
IPC分类号： B08B3/02
CPC分类号： B08B3/04 , B08B3/02 , H01L21/67028
摘要： A semiconductor substrate (78) processing apparatus and a method for processing semiconductor substrates (78) are provided. The semiconductor substrate (78) processing apparatus may include a liquid container (62) where a semiconductor substrate (78) may be immersed in a semiconductor processing liquid (64). The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor (76) is directed at a surface of the semiconductor substrate (78)where the semiconductor substrate contacts a surface of the processing liquid (64).
摘要翻译：提供半导体基板（78）处理装置和半导体基板（78）的处理方法。半导体基板（78）处理装置可以包括其中可以将半导体基板（78）浸入半导体处理液体（64）中的液体容器（62）。然后可以从半导体处理液体中去除半导体衬底，同时蒸汽（76）指向半导体衬底（78）的半导体衬底与处理液体（64）的表面接触的表面。

3. 发明申请

WO2012102997A2 PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 审中-公开
标题翻译：高电容应用中用于氧化侧壁介质的脉冲法
公开(公告)号：WO2012102997A2
公开(公告)日：2012-08-02
申请号：PCT/US2012/022195
申请日：2012-01-23
申请人： APPLIED MATERIALS, INC , XIE, Bo , DEMOS, Alexandros T. , ROCHA-ALVAREZ, Juan Carlos , BALUJA, Sanjeev
发明人： XIE, Bo , DEMOS, Alexandros T. , ROCHA-ALVAREZ, Juan Carlos , BALUJA, Sanjeev
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储器单元的系统，方法和设备。本发明包括形成具有第一介电材料中的侧壁的特征; 在特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将第二电介质材料暴露于氧化物质和紫外光以氧化第二电介质材料。披露了许多其他方面。

4. 发明申请

WO2012041683A1 SERVER MANAGEMENT USING BASEBOARD MANAGEMENT CONTROLLER TO ESTABLISH WIRELESS NETWORK 审中-公开
标题翻译：使用基板管理控制器建立无线网络的服务器管理
公开(公告)号：WO2012041683A1
公开(公告)日：2012-04-05
申请号：PCT/EP2011/065634
申请日：2011-09-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , ZHANG, Binqi , XIE, Bo , LIN, Jing , XU, Jian
发明人： ZHANG, Binqi , XIE, Bo , LIN, Jing , XU, Jian
IPC分类号： H04L12/24 , H04L29/08
CPC分类号： H04W8/00 , H04L41/04 , H04L67/1002 , H04L67/14 , H04W4/50 , H04W16/00 , H04W24/00 , H04W76/10 , H04W84/12
摘要： The present invention discloses a server management system, an interface server and a method for server management, wherein said server management system comprises baseboard management controllers located at each server, and each of the baseboard management controllers comprises: a connection establishment interface means that is configured to establish connection with one processing device in response to a request of establishing connection with said processing device and to receive a server management instruction from said processing device; and a wireless network communication means that is configured to enable the baseboard management controllers of said plurality of servers to establish a wireless network through the wireless network communication means on them; wherein, the server that establishes connection with said processing device is designated as an interface server of said server management system, and the wireless network communication means of the baseboard management controller of said interface server is further able to broadcast the server management instruction received by said connection establishment interface means to managed servers via the established wireless network.
摘要翻译：本发明公开了一种服务器管理系统，接口服务器和服务器管理方法，其中所述服务器管理系统包括位于每个服务器的基板管理控制器，并且每个基板管理控制器包括：配置的连接建立接口装置响应于与所述处理设备建立连接的请求并且从所述处理设备接收服务器管理指令来建立与一个处理设备的连接; 以及无线网络通信装置，被配置为使得所述多个服务器的基板管理控制器能够通过其上的无线网络通信装置建立无线网络; 其中，与所述处理装置建立连接的服务器被指定为所述服务器管理系统的接口服务器，并且所述接口服务器的基板管理控制器的无线网络通信装置还能够广播由所述服务器管理系统接收的服务器管理指令连接建立接口意味着经由建立的无线网络被管理的服务器。

5. 发明申请

WO2008021265A2 SEMICONDUCTOR SUBSTRATE CLEANING APPARATUS 审中-公开
标题翻译：半导体基板清洗装置
公开(公告)号：WO2008021265A2
公开(公告)日：2008-02-21
申请号：PCT/US2007/017837
申请日：2007-08-10
申请人： APPLIED MATERIALS, INC. , TANG, Jianshe , LU, Wei , XIE, Bo , LI, Fred , KO, Alex
发明人： TANG, Jianshe , LU, Wei , XIE, Bo , LI, Fred , KO, Alex
IPC分类号： B08B3/02
CPC分类号： B08B3/04 , B08B3/02 , H01L21/67028
摘要： A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.
摘要翻译：提供半导体衬底处理设备和半导体衬底的处理方法。半导体基板处理装置可以包括其中半导体基板可以浸入半导体处理液体中的液体容器。然后可以从半导体处理液体中去除半导体衬底，同时蒸汽指向半导体衬底的半导体衬底接触处理液表面的表面。

6. 发明申请

WO2013162848A1 METHOD FOR UV BASED SILYLATION CHAMBER CLEAN 审中-公开
标题翻译：紫外线基硅烷清洗方法
公开(公告)号：WO2013162848A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/035297
申请日：2013-04-04
申请人： APPLIED MATERIALS, INC. , XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
发明人： XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： B08B7/0021 , B08B7/0035 , C23C16/4405 , H01J37/3244 , H01J37/32862
摘要： Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.
摘要翻译：本发明的实施例通常提供用于清洁UV处理室的方法。在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中，在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从存在于热处理室中的室组分的暴露表面去除不想要的残留物或沉积物使用活性氧自由基。

7. 发明申请

WO2013106171A1 METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION 审中-公开
标题翻译：用于分解紫外线光学元件以避免降解的方法
公开(公告)号：WO2013106171A1
公开(公告)日：2013-07-18
申请号：PCT/US2012/070396
申请日：2012-12-18
申请人： APPLIED MATERIALS, INC. , BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
发明人： BALUJA, Sanjeev , DEMOS, Alexandros, T. , XIE, Bo , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400°C or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译：公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流过，从而从光学部件的露出表面除去碳类调味剂层。

8. 发明申请

WO2013002899A1 DIELECTRIC RECOVERY OF PLASMA DAMAGED LOW-K FILMS BY UV-ASSISTED PHOTOCHEMICAL DEPOSITION 审中-公开
标题翻译：通过紫外辅助光电沉积法等离子体破坏的低K膜的电介质回收
公开(公告)号：WO2013002899A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/037822
申请日：2012-05-14
申请人： APPLIED MATERIALS, INC. , YIM, Kang Sub , NOWAK, Thomas , XIE, Bo , DEMOS, Alexandros T.
发明人： YIM, Kang Sub , NOWAK, Thomas , XIE, Bo , DEMOS, Alexandros T.
IPC分类号： H01L21/205
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/76802 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76831
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和含碳化合物的修复过程从孔中除去水，并进一步从低k膜结构中去除亲水性化合物。

9. 发明申请

WO2012148641A2 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS 审中-公开
标题翻译： UV辅助硅酸盐用于恢复和破坏低K膜的密封
公开(公告)号：WO2012148641A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/032203
申请日：2012-04-04
申请人： APPLIED MATERIALS, INC. , XIE, Bo , DEMOS, Alexandros T. , YIM, Kang Sub , NOWAK, Thomas , CHAN, Kelvin
发明人： XIE, Bo , DEMOS, Alexandros T. , YIM, Kang Sub , NOWAK, Thomas , CHAN, Kelvin
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

10. 发明申请

WO2012102997A3 PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 审中-公开
标题翻译：用于高电容应用的氧化电介质的脉冲方法
公开(公告)号：WO2012102997A3
公开(公告)日：2012-11-01
申请号：PCT/US2012022195
申请日：2012-01-23
申请人： APPLIED MATERIALS INC , XIE BO , DEMOS ALEXANDROS T , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV
发明人： XIE BO , DEMOS ALEXANDROS T , ROCHA-ALVAREZ JUAN CARLOS , BALUJA SANJEEV
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储单元的系统，方法和装置。本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。公开了许多附加方面。

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