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1. 发明申请

WO2010115128A9 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A9
公开(公告)日：2010-10-07
申请号：PCT/US2010/029815
申请日：2010-04-02
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
发明人： ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
IPC分类号： H01L21/203 , C23C14/34
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

2. 发明申请

WO2008156794A3 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 审中-公开
公开(公告)号：WO2008156794A3
公开(公告)日：2008-12-24
申请号：PCT/US2008/007611
申请日：2008-06-18
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , YOON, Ki Hwan , GUO, Ted , YANG, Hong S. , YU, Sang-Ho
发明人： ALLEN, Adolph Miller , YOON, Ki Hwan , GUO, Ted , YANG, Hong S. , YU, Sang-Ho
IPC分类号： C23C14/34
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

3. 发明申请

WO2016028478A1 METHODS AND APPARATUS FOR MAINTAINING LOW NON-UNIFORMITY OVER TARGET LIFE 审中-公开
标题翻译：维持目标生命中低非均质性的方法和装置
公开(公告)号：WO2016028478A1
公开(公告)日：2016-02-25
申请号：PCT/US2015/043441
申请日：2015-08-03
申请人： APPLIED MATERIALS, INC.
发明人： JOHANSON, William , ZHANG, Fuhong , ALLEN, Adolph Miller , LIU, Yu Y.
IPC分类号： C23C14/34 , C23C14/14 , C23C14/54
CPC分类号： H01J37/347 , C23C14/3492 , C23C14/50 , C23C14/542 , H01J37/32733 , H01J2237/026
摘要： Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target.
摘要翻译：本文提供了用于在目标寿命期间保持低不均匀性的改进方法和装置的实施例。在一些实施例中，在物理气相沉积室中处理衬底的方法包括：在衬底支撑件顶部设置衬底，衬底支撑件具有围绕衬底支撑件的覆盖环，使得衬底的上表面位于第一距离盖环的上表面; 从与衬底支撑件相对布置的靶溅射源材料，以在保持第一距离的同时在衬底上沉积膜; 以及相对于所述盖环降低所述基板支撑件并从所述靶溅射所述源材料以在所述目标的寿命期间将膜沉积在随后的基板上。

4. 发明申请

WO2017007729A1 PROCESS KIT HAVING TALL DEPOSITION RING AND DEPOSITION RING CLAMP 审中-公开
标题翻译：具有沉积环和沉积环夹的工艺套件
公开(公告)号：WO2017007729A1
公开(公告)日：2017-01-12
申请号：PCT/US2016/040847
申请日：2016-07-01
申请人： APPLIED MATERIALS, INC.
发明人： JOHANSON, William , SAVANDAIAH, Kirankumar , ALLEN, Adolph Miller , WANG, Xin , PRABHU, Prashant
IPC分类号： C23C14/50 , C23C14/34
CPC分类号： C23C14/3407 , C23C14/564 , H01J37/32477 , H01J37/34 , H01J37/3488
摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.
摘要翻译：本文提供了具有加工套件和加工腔室的实施例。在一些实施例中，处理套件包括沉积环，其被配置为设置在设计成支撑具有给定宽度的衬底的衬底支撑件上，包括：环形带，被配置为搁置在衬底支撑件的下凸缘上; 从所述环形带的内边缘向上延伸的内唇缘，其中所述内唇缘的内表面和所述环形带的内表面一起形成具有小于给定宽度的宽度的中心开口，并且其中，在环形带的上表面和内唇缘的上表面之间的距离在约24mm和约38mm之间; 设置在所述环形带的径向外侧的通道; 以及向外延伸并设置在通道的径向外侧的外唇缘。

5. 发明申请

WO2021216289A1 METHODS AND APPARATUS FOR CLEANING A SHOWERHEAD 审中-公开
公开(公告)号：WO2021216289A1
公开(公告)日：2021-10-28
申请号：PCT/US2021/026317
申请日：2021-04-08
申请人： APPLIED MATERIALS, INC.
发明人： YU, Tom H. , CHAN, Wei Min , WANG, Peiqi , WU, Kai , ALLEN, Adolph Miller , DAITO, Kazuya
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32
摘要： Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

6. 发明申请

WO2019089190A1 PULSED DC SOURCE FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING PHYSICAL VAPOR DEPOSITION OF DIELECTRIC FILMS AND METHODS OF APPLICATION 审中-公开
公开(公告)号：WO2019089190A1
公开(公告)日：2019-05-09
申请号：PCT/US2018/054918
申请日：2018-10-09
申请人： APPLIED MATERIALS, INC.
发明人： BABAYAN, Viachslav , ALLEN, Adolph Miller , CITLA, Bhargav , DEDORE, Ronald D. , FAUNE, Vanessa , HUA, Zhong Qiang , SONI, Vaibhav , WU, Menglu
IPC分类号： H01L21/02 , H05H1/46 , H01L21/67 , C23C16/455 , H01L21/28
摘要： An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

7. 发明申请

WO2018075165A1 POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS) 审中-公开
标题翻译：大功率脉冲磁控溅射电源（HiPIMS）
公开(公告)号：WO2018075165A1
公开(公告)日：2018-04-26
申请号：PCT/US2017/051091
申请日：2017-09-12
申请人： APPLIED MATERIALS, INC.
发明人： BABAYAN, Viachslav , ALLEN, Adolph Miller , STOWELL, Michael , HUA, Zhong Qiang , JOHNSON, Carl R. , FAUNE, Vanessa , LIU, Jingjing
IPC分类号： H01J37/34
摘要： A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.
摘要翻译：用于产生和输送用于处理室的脉冲高压信号的系统包括远程设置的高电压电源以产生高电压信号，设置在离处理室相对更近的脉冲发生器处高电压电源，用于将远程设置的高压电源的高电压信号传送到要脉冲的脉冲发生器的第一屏蔽电缆，以及用于从脉冲发生器向处理室传送脉冲高电压信号的第二屏蔽电缆。用于产生脉冲高压信号并将其输送到处理室的方法包括：在远离处理室的位置产生高电压信号;将高电压信号输送到相对靠近处理室的位置脉冲化; 输送高压信号，并将脉冲高压信号输送到处理室。

8. 发明申请

WO2017058567A1 METHODS FOR PRE-CLEANING CONDUCTIVE INTERCONNECT STRUCTURES 审中-公开
标题翻译：预清洁导电互连结构的方法
公开(公告)号：WO2017058567A1
公开(公告)日：2017-04-06
申请号：PCT/US2016/052602
申请日：2016-09-20
申请人： APPLIED MATERIALS, INC.
发明人： XIE, Xiangjin , LIU, Feng Q. , YAO, Daping , JANSEN, Alexander , LEE, Joung Joo , ALLEN, Adolph Miller , TANG, Xianmin , CHANG, Mei
IPC分类号： C23G5/04 , C23G5/032 , C23G3/00 , C11D7/26 , C11D17/00 , H05K3/26
CPC分类号： H01L21/02068 , B08B3/00 , B08B3/106 , B08B5/00 , B08B7/0035 , B08B9/00 , B08B9/027 , C23G1/24 , F01D5/005 , F05D2230/90 , H01L21/02063 , H01L21/76814
摘要： Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises an exposed conductive material; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol vapor to reduce a contaminated surface of the conductive material. In some embodiments, the substrate further comprises a first surface having an opening formed in the first surface, wherein the exposed conductive material is part of a conductive material disposed in the substrate and aligned with the opening such that a portion of the conductive material disposed in the substrate is exposed through the opening.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到高达约400摄氏度的温度，其中衬底包括暴露的导电材料; 并将基底暴露于包含约80至约100wt。％的醇蒸气以减少导电材料的污染表面。在一些实施例中，衬底还包括具有形成在第一表面中的开口的第一表面，其中暴露的导电材料是设置在衬底中并与开口对准的导电材料的一部分，使得导电材料的一部分设置在基板通过开口露出。

9. 发明申请

WO2023043516A1 TOP MAGNETS FOR DECREASED NON-UNIFORMITY IN PVD 审中-公开
公开(公告)号：WO2023043516A1
公开(公告)日：2023-03-23
申请号：PCT/US2022/034898
申请日：2022-06-24
申请人： APPLIED MATERIALS, INC.
发明人： XIA, Borui , CHAN, Anthony Chih-Tung , YUE, Shiyu , LEI, Wei , KAMATH, Aravind Miyar , SUNDARARAJAN, Makund , WANG, Rongjun , ALLEN, Adolph Miller
IPC分类号： H01J37/34 , C23C14/35
摘要： Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

10. 发明申请

WO2023278255A1 REDUCING SUBSTRATE SURFACE SCRATCHING USING MACHINE LEARNING 审中-公开
公开(公告)号：WO2023278255A1
公开(公告)日：2023-01-05
申请号：PCT/US2022/034792
申请日：2022-06-23
申请人： APPLIED MATERIALS, INC.
发明人： SHAH, Kartik B. , RADHAKRISHNAN, Satish , RAMANATHAN, Karthik , BALARAMAN, Karthikeyan , ALLEN, Adolph Miller , CHONG, Xinyuan , SAHU, Mitrabhanu , XU, Wenjing , JACKSON, Michael Sterling , HU, Weize , CHEN, Feng
IPC分类号： G06N20/00 , H01L21/67 , G05B13/0265 , G05B13/048
摘要： Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

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