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1. 发明申请

WO2008156794A3 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 审中-公开
公开(公告)号：WO2008156794A3
公开(公告)日：2008-12-24
申请号：PCT/US2008/007611
申请日：2008-06-18
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , YOON, Ki Hwan , GUO, Ted , YANG, Hong S. , YU, Sang-Ho
发明人： ALLEN, Adolph Miller , YOON, Ki Hwan , GUO, Ted , YANG, Hong S. , YU, Sang-Ho
IPC分类号： C23C14/34
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

2. 发明申请

WO2006074013A1 MULTI-TRACK MAGNETRON EXHIBITING MORE UNIFORM DEPOSITION AND REDUCED ROTATIONAL ASYMMETRY 审中-公开
标题翻译：多轨磁铁展示更均匀的沉积和减少的旋转不对称
公开(公告)号：WO2006074013A1
公开(公告)日：2006-07-13
申请号：PCT/US2005/047292
申请日：2005-12-29
申请人： APPLIED MATERIALS, INC. , YANG, Hong, S. , GUNG, Tza-Jing , LEI, Jian-Xu , GUO, Ted
发明人： YANG, Hong, S. , GUNG, Tza-Jing , LEI, Jian-Xu , GUO, Ted
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , H01J37/3405
摘要： A multi-track magnetron having a convolute shape and asymmetric about the target center (14) about which it rotates. A plasma track (166) is formed as a closed loop between opposed inner magnetic pole (162) and outer magnetic pole (164), preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=ar n . After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.
摘要翻译：具有卷绕形状并且围绕其旋转的目标中心（14）不对称的多轨磁控管。等离子体轨道166形成为相对的内磁极（162）和外磁极（164）之间的闭环，优选为相对于目标中心的两个或三个径向排列和螺旋形的反向传播轨迹经过旋转轴。可以优化极点形状以产生符合函数L = ar的累积轨道长度分布

3. 发明申请

WO2008156794A2 SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY 审中-公开
标题翻译：具有增加生命和突破性的飞溅目标
公开(公告)号：WO2008156794A2
公开(公告)日：2008-12-24
申请号：PCT/US2008007611
申请日：2008-06-18
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , YOON KI HWAN , GUO TED , YANG HONG S , YU SANG-HO
发明人： ALLEN ADOLPH MILLER , YOON KI HWAN , GUO TED , YANG HONG S , YU SANG-HO
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3435
摘要： A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.
摘要翻译：溅射室的溅射靶包括安装有溅射板的背板。在一个版本中，背板包括具有包括环形凹槽的前表面的圆形板。溅射板包括一个盘，该盘包括溅射表面和具有圆形脊的背面，该圆形脊的形状和尺寸适于装配到背板的环形槽中。

4. 发明申请

WO2007016013A3 UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 审中-公开
公开(公告)号：WO2007016013A3
公开(公告)日：2007-02-08
申请号：PCT/US2006/028582
申请日：2006-07-24
申请人： APPLIED MATERIALS, INC. , RITCHIE, Alan A. , LEE, Wei Ti , GUO, Ted
发明人： RITCHIE, Alan A. , LEE, Wei Ti , GUO, Ted
IPC分类号： C23C16/00
摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

5. 发明申请

WO2007024465A3 ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开
公开(公告)号：WO2007024465A3
公开(公告)日：2007-03-01
申请号：PCT/US2006/030784
申请日：2006-08-08
申请人： APPLIED MATERIALS, INC. , LEE, Wei, Ti , GUO, Ted , YO, Sang-ho
发明人： LEE, Wei, Ti , GUO, Ted , YO, Sang-ho
IPC分类号： C23C14/35 , H01L21/44
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.

6. 发明申请

WO2007024465A2 ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开
标题翻译：漂白抛光铝铝溅射
公开(公告)号：WO2007024465A2
公开(公告)日：2007-03-01
申请号：PCT/US2006030784
申请日：2006-08-08
申请人： APPLIED MATERIALS INC , LEE WEI TI , GUO TED , YO SANG-HO
发明人： LEE WEI TI , GUO TED , YO SANG-HO
IPC分类号： C23C14/00
CPC分类号： C23C14/185 , C23C14/025 , C23C14/046 , C23C14/345
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.
摘要翻译：铝溅射工艺包括RF偏置晶片和两步铝填充工艺和装置，用于通过在两个明显不同的条件下优选在两个不同的等离子体溅射反应器（168,170）中的溅射将铝填充到窄通孔中。第一步骤（130）包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相对高度偏置以将铝原子吸引到窄孔中并蚀刻突出端。第二步骤（132）包括在相对温暖的晶片上的更中性的溅射。保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。在第一步中围绕铝靶的背面扫描的磁控管可能（80）相对较小并且不平衡，（60）在第二步中相对较大和平衡。

7. 发明申请

WO2007016013A2 UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 审中-公开
标题翻译： CVD阻塞板防止颗粒形成的独特钝化技术
公开(公告)号：WO2007016013A2
公开(公告)日：2007-02-08
申请号：PCT/US2006028582
申请日：2006-07-24
申请人： APPLIED MATERIALS INC , RITCHIE ALAN A , LEE WEI TI , GUO TED
发明人： RITCHIE ALAN A , LEE WEI TI , GUO TED
IPC分类号： C23C14/32 , C23C16/00 , C23F1/00
CPC分类号： C23C16/45561 , C23C14/165 , C23C16/4402 , C23C16/4404 , C23C16/45565 , C23C16/45591 , Y10T29/497 , Y10T29/49826 , Y10T137/0491 , Y10T137/9029
摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.
摘要翻译：提供用于化学气相沉积室的阻挡板和处理阻挡板的方法。阻挡板限定穿过其中的多个孔并且具有至少约99.5％纯度的上表面和下表面，其使阻挡板上污染颗粒的成核最小化。可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。还提供包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

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