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    • 5. 发明申请
    • PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    • RF物理蒸气沉积工艺套件
    • WO2009135050A3
    • 2010-02-18
    • PCT/US2009042387
    • 2009-04-30
    • APPLIED MATERIALS INCYOUNG DONNYHAWRYLCHAK LARA
    • YOUNG DONNYHAWRYLCHAK LARA
    • H01L21/203
    • H01J37/32651C23C14/35H01J37/32082H01J37/32623H01J37/32642H01J37/3441
    • Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
    • 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地,本文所述的实施例涉及包括用于物理沉积室中的盖环,屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来,以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比,其提供了有助于RF谐波的扩展的RF返回路径,从而在处理空腔之外引起杂散等离子体,处理套件的部件降低了RF返回路径,从而在内部处理区域中提供改进的等离子体容纳物。