专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010115128A4 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A4
公开(公告)日：2011-03-03
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

2. 发明申请

WO2010115128A2 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

3. 发明申请

WO2011123399A3 APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY 审中-公开
公开(公告)号：WO2011123399A3
公开(公告)日：2011-10-06
申请号：PCT/US2011/030226
申请日：2011-03-28
申请人： APPLIED MATERIALS, INC. , RASHEED, Muhammad , HAWRYLCHAK, Lara , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , RITCHIE, Alan
发明人： RASHEED, Muhammad , HAWRYLCHAK, Lara , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , RITCHIE, Alan
IPC分类号： C23C14/34 , C23C14/54
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

4. 发明申请

WO2011109337A2 PHYSICAL VAPOR DEPOSITION WITH A VARIABLE CAPACITIVE TUNER AND FEEDBACK CIRCUIT 审中-公开
标题翻译：具有可变电容调谐器和反馈电路的物理蒸气沉积
公开(公告)号：WO2011109337A2
公开(公告)日：2011-09-09
申请号：PCT/US2011026601
申请日：2011-03-01
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
发明人： RASHEED MUHAMMAD M , DEDORE RONALD D , COX MICHAEL S , MILLER KEITH A , YOUNG DONNY , FORSTER JOHN C , ALLEN ADOLPH M , HAWRYLCHAK LARA
CPC分类号： H01J37/3444 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/3438
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.
摘要翻译：提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机旋转，以及连接到基座的可变电容器的输出。可变电容器的期望状态与过程控制器中的过程配方相关联。当执行处理配方时，将可变电容器置于所需状态。

5. 发明申请

WO2009135050A3 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：WO2009135050A3
公开(公告)日：2010-02-18
申请号：PCT/US2009042387
申请日：2009-04-30
申请人： APPLIED MATERIALS INC , YOUNG DONNY , HAWRYLCHAK LARA
发明人： YOUNG DONNY , HAWRYLCHAK LARA
IPC分类号： H01L21/203
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供改进的等离子体容纳物。

6. 发明申请

WO2011123399A2 APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY 审中-公开
标题翻译：具有中央射频能量的物理蒸气沉积装置
公开(公告)号：WO2011123399A2
公开(公告)日：2011-10-06
申请号：PCT/US2011030226
申请日：2011-03-28
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD , HAWRYLCHAK LARA , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , RITCHIE ALAN
发明人： RASHEED MUHAMMAD , HAWRYLCHAK LARA , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , RITCHIE ALAN
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

7. 发明申请

WO2010115128A3 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：WO2010115128A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029815
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
发明人： ALLEN ADOLPH MILLER , HAWRYLCHAK LARA , XIE ZHIGANG , RASHEED MUHAMMAND M , WANG RONGJUN , TANG XIANMIN , LIU ZHENDONG , GUNG TZA-JING , GANDIKOTA SRINIVAS , CHANG MEI , COX MICHAEL S , YOUNG DONNY , SAVANDAIAH KIRANKUMAR , GE ZHENBIN
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

8. 发明申请

WO2010115128A9 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A9
公开(公告)日：2010-10-07
申请号：PCT/US2010/029815
申请日：2010-04-02
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
发明人： ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
IPC分类号： H01L21/203 , C23C14/34
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

9. 发明申请

WO2011109337A3 PHYSICAL VAPOR DEPOSITION WITH A VARIABLE CAPACITIVE TUNER AND FEEDBACK CIRCUIT 审中-公开
公开(公告)号：WO2011109337A3
公开(公告)日：2011-09-09
申请号：PCT/US2011/026601
申请日：2011-03-01
申请人： APPLIED MATERIALS, INC. , RASHEED, Muhammad M. , DEDORE, Ronald D. , COX, Michael S. , MILLER, Keith A. , YOUNG, Donny , FORSTER, John C. , ALLEN, Adolph M. , HAWRYLCHAK, Lara
发明人： RASHEED, Muhammad M. , DEDORE, Ronald D. , COX, Michael S. , MILLER, Keith A. , YOUNG, Donny , FORSTER, John C. , ALLEN, Adolph M. , HAWRYLCHAK, Lara
IPC分类号： C23C14/34 , C23C14/54 , C23C14/35
摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

10. 发明申请

WO2009135050A2 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：WO2009135050A2
公开(公告)日：2009-11-05
申请号：PCT/US2009/042387
申请日：2009-04-30
申请人： APPLIED MATERIALS, INC. , YOUNG, Donny , HAWRYLCHAK, Lara
发明人： YOUNG, Donny , HAWRYLCHAK, Lara
IPC分类号： H01L21/203
CPC分类号： H01J37/32651 , C23C14/35 , H01J37/32082 , H01J37/32623 , H01J37/32642 , H01J37/3441
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供改进的等离子体容纳物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式