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1. 发明申请

WO2015116348A1 IMPROVED WAFER COATING 审中-公开
标题翻译：改进的涂层
公开(公告)号：WO2015116348A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/010192
申请日：2015-01-05
申请人： APPLIED MATERIALS, INC.
发明人： PARK, Jungrae , LEI, Wei-Sheng , KUMAR, Prabhat , PAPANU, James S. , EATON, Brad , KUMAR, Ajay
IPC分类号： H01L21/56 , H01L21/683 , H01L21/02
CPC分类号： H01L21/02282 , B05B1/00 , B05B3/1014 , B05B3/1035 , H01L21/3081 , H01L21/3086 , H01L21/6715 , H01L21/6835 , H01L21/78 , H01L2221/68327
摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.
摘要翻译：描述了改进的晶片涂布工艺，装置和系统。在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。可旋转台具有位于半导体晶片周边之外的向下倾斜区域。该设备包括位于可旋转台上方并被配置为将液体分配在半导体晶片上的喷嘴。该装置还包括构造成旋转可旋转台的马达。

2. 发明申请

WO2012145060A1 METHOD OF FORMING P-N JUNCTION IN SOLAR CELL SUBSTRATE 审中-公开
标题翻译：在太阳能电池基板中形成P-N结的方法
公开(公告)号：WO2012145060A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/025082
申请日：2012-02-14
申请人： APPLIED MATERIALS, INC. , KUMAR, Prabhat , DOMINGUEZ, Jason , TANNER, David
发明人： KUMAR, Prabhat , DOMINGUEZ, Jason , TANNER, David
IPC分类号： H01L31/06 , H01L31/042 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention relate to a single step diffusion process used in selective emitter solar cell fabrication. In one embodiment, a dopant paste is selectively applied on a front surface of a substrate having opposite conductivity type from the dopant paste. The substrate is then exposed to a dopant containing vapor to deposit a doping layer having opposite conductivity type from the substrate on the front surface of the substrate. While the substrate is exposed to the dopant containing vapor, a portion of the dopant paste also contribute to deposition of the doping layer via gas phase transport of doping atoms from the dopant paste. The substrate is then heated in an atmosphere comprising oxygen and/or nitrogen to a temperature sufficient to cause the dopant atoms in the dopant paste and the doping layer to diffuse into the substrate, forming heavily and lightly doped emitter regions.
摘要翻译：本发明的实施例涉及用于选择性发射极太阳能电池制造的单步骤扩散方法。在一个实施例中，掺杂剂浆料选择性地施加在与掺杂剂浆料相反的导电类型的衬底的前表面上。然后将衬底暴露于含有蒸汽的掺杂剂以从衬底的前表面上的衬底沉积具有相反导电类型的掺杂层。当衬底暴露于含有掺杂剂的蒸汽的掺杂剂时，掺杂剂浆料的一部分也有助于通过掺杂原子从掺杂剂浆料的气相转移来沉积掺杂层。然后将衬底在包括氧和/或氮的气氛中加热到足以使掺杂剂浆料中的掺杂剂原子和掺杂层扩散到衬底中的温度，形成重度和轻掺杂的发射极区域。

3. 发明申请

WO2015084661A1 SCREEN PRINT MASK FOR LASER SCRIBE AND PLASMA ETCH WAFER DICING PROCESS 审中-公开
标题翻译：用于激光扫描和等离子体蚀刻抛光过程的屏幕打印面罩
公开(公告)号：WO2015084661A1
公开(公告)日：2015-06-11
申请号：PCT/US2014/067498
申请日：2014-11-25
申请人： APPLIED MATERIALS, INC.
发明人： KUMAR, Prabhat , EATON, Brad , LEI, Wei-Sheng , PAPANU, James, S. , KUMAR, Ajay
IPC分类号： H01L21/301 , H01L21/027 , H01L21/3065
CPC分类号： H01L21/78 , B23K26/364 , B41F15/08 , H01J37/32091 , H01J37/321 , H01J2237/334 , H01L21/3043 , H01L21/3065 , H01L21/67207
摘要： Methods of using a screen-print mask for hybrid wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits separated by streets involves screen-printing a patterned mask above the semiconductor wafer, the patterned mask covering the integrated circuits and exposing the streets of the semiconductor wafer. The method also involves laser ablating the streets with a laser scribing process to expose regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the exposed regions of the semiconductor wafer to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.
摘要翻译：使用激光划线和等离子体蚀刻使用用于混合晶片切割的丝网印刷掩模的方法。在一个示例中，对具有由街道分开的多个集成电路进行切割的半导体晶片的方法包括在半导体晶片之上丝网印刷图案化掩模，该图案化掩模覆盖集成电路并暴露半导体晶片的街道。该方法还涉及通过激光划线工艺激光烧蚀街道，以暴露集成电路之间的半导体晶片的区域。该方法还包括通过半导体晶片的暴露区域等离子体蚀刻半导体晶片以对集成电路进行分离。图案化掩模在等离子体蚀刻期间保护集成电路。

4. 发明申请

WO2013106225A1 METHODS OF MANUFACTURING SOLAR CELL DEVICES 审中-公开
标题翻译：制造太阳能电池器件的方法
公开(公告)号：WO2013106225A1
公开(公告)日：2013-07-18
申请号：PCT/US2013/020044
申请日：2013-01-03
申请人： APPLIED MATERIALS, INC. , STEWART, Michael P. , KUMAR, Prabhat , WIJEKOON, Kapila , ZHANG, Lin , PONNEKANTI, Hari K.
发明人： STEWART, Michael P. , KUMAR, Prabhat , WIJEKOON, Kapila , ZHANG, Lin , PONNEKANTI, Hari K.
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.
摘要翻译：本发明的实施例涉及制造太阳能电池的方法。特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

5. 发明申请

WO2013062727A1 METHOD AND APPARATUS OF REMOVING A PASSIVATION FILM AND IMPROVING CONTACT RESISTANCE IN REAR POINT CONTACT SOLAR CELLS 审中-公开
标题翻译：去除钝化膜的方法和装置，并改善后点接触太阳能电池的接触电阻
公开(公告)号：WO2013062727A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/058491
申请日：2012-10-02
申请人： APPLIED MATERIALS, INC. , STEWART, Michael, P. , PONNEKANTI, Hari , KUMAR, Prabhat , FRANKLIN, Jeffrey, L. , WIJEKOON, Kapila, P.
发明人： STEWART, Michael, P. , PONNEKANTI, Hari , KUMAR, Prabhat , FRANKLIN, Jeffrey, L. , WIJEKOON, Kapila, P.
IPC分类号： H01L31/042 , H01L31/0216 , H01L21/306 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/022425 , Y02E10/50
摘要： Embodiments of the present invention generally provide improved processes and apparatus for removing passivation layers from a surface of photovoltaic cells and improving contact resistance in rear point contact photovoltaic cells. In one embodiment, a method of processing a solar cell substrate includes providing a substrate having a passivation layer deposited on a first surface of the substrate. The passivation layer is a layer stack comprising an aluminum oxide and a silicon nitride. The method also includes exposing the first surface of the substrate to an etchant, and heating the etchant to dissolve the aluminum oxide of the passivation layer on the first surface. The method may further include forming a metal containing layer on a second surface of the substrate that is opposite to the first surface.
摘要翻译：本发明的实施例通常提供用于从光伏电池的表面去除钝化层并改善后点接触光伏电池中的接触电阻的改进的方法和装置。在一个实施例中，处理太阳能电池基板的方法包括提供具有沉积在基板的第一表面上的钝化层的基板。钝化层是包含氧化铝和氮化硅的层叠层。该方法还包括将衬底的第一表面暴露于蚀刻剂，并加热蚀刻剂以溶解第一表面上钝化层的氧化铝。该方法还可以包括在与第一表面相对的基板的第二表面上形成含金属层。

6. 发明申请

WO2015175267A1 DICING TAPE THERMAL MANAGEMENT BY WAFER FRAME SUPPORT RING COOLING DURING PLASMA DICING 审中-公开
标题翻译：通过水平框架支撑滚筒冷却的等温线热管理
公开(公告)号：WO2015175267A1
公开(公告)日：2015-11-19
申请号：PCT/US2015/029259
申请日：2015-05-05
申请人： APPLIED MATERIALS, INC.
发明人： LEI, Wei-Sheng , KUMAR, Prabhat , EATON, Brad , KUMAR, Ajay
IPC分类号： H01L21/301 , H01L21/78
CPC分类号： H01L21/82 , H01L21/3065 , H01L21/67 , H01L21/67069 , H01L21/67092 , H01L21/67109 , H01L21/67207 , H01L21/78
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves introducing a substrate supported by a substrate carrier into a plasma etch chamber. The substrate has a patterned mask thereon covering integrated circuits and exposing streets of the substrate. The substrate carrier has a backside. The method also involves supporting at least a portion of the backside of the substrate carrier on a chuck of the plasma etch chamber. The method also involves cooling substantially all of the backside of the substrate carrier, the cooling involving cooling at least a first portion of the backside of the substrate carrier by the chuck. The method also involves plasma etching the substrate through the streets to singulate the integrated circuits while performing the cooling substantially all of the backside of the substrate carrier.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括将由衬底载体支撑的衬底引入等离子体蚀刻室。衬底上具有图案化掩模，覆盖集成电路并暴露衬底的街道。衬底载体具有背面。该方法还涉及将衬底载体的背侧的至少一部分支撑在等离子体蚀刻室的卡盘上。该方法还包括冷却基板载体的基本上所有背面，冷却涉及通过卡盘冷却基板载体的背面的至少第一部分。该方法还涉及通过街道等离子体蚀刻衬底以对集成电路进行单片化，同时基本上全部衬底载体的背面进行冷却。

7. 发明申请

WO2015153592A1 RESIDUE REMOVAL FROM SINGULATED DIE SIDEWALL 审中-公开
标题翻译：从平整的DIE小屋中移除残留物
公开(公告)号：WO2015153592A1
公开(公告)日：2015-10-08
申请号：PCT/US2015/023564
申请日：2015-03-31
申请人： APPLIED MATERIALS, INC.
发明人： LEI, Wei-Sheng , KUMAR, Prabhat , PAPANU, James S. , KUMAR, Ajay , EATON, Brad
IPC分类号： H01L21/301 , H01L21/76 , H01L21/78
CPC分类号： H01L21/02076 , H01L21/67092 , H01L21/67207
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide gaps in the mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the gaps in the mask to singulate the integrated circuits. The method also involves, subsequent to plasma etching the semiconductor wafer, removing etch residue from sidewalls of the singulated integrated circuits.
摘要翻译：对半导体晶片的切割方法，具有多个集成电路的各晶片进行说明。在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。该方法还包括用激光划线工艺对掩模进行图案化以在掩模中提供间隙，在半导体晶片的间隙暴露集成电路之间的半导体晶片。该方法还包括通过掩模中的间隙等离子体蚀刻半导体晶片以对集成电路进行分离。该方法还涉及在等离子体蚀刻半导体晶片之后，从单个集成电路的侧壁去除蚀刻残留物。

8. 发明申请

WO2013062734A1 MONOLOTHIC MODULE ASSEMBLY FOR STANDARD CRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：标准晶体硅太阳能电池单体组件
公开(公告)号：WO2013062734A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/059011
申请日：2012-10-05
申请人： APPLIED MATERIALS, INC. , KUMAR, Prabhat , PAAK, Sunhom , GEE, James M.
发明人： KUMAR, Prabhat , PAAK, Sunhom , GEE, James M.
IPC分类号： H01L31/05
CPC分类号： H01L31/0504 , H01L31/0512 , Y02E10/50
摘要： Apparatuses and assembly methods are provided for a monolithic solar cell panel assembly. The assembly comprises an array of solar cells having front electrical contacts and back electrical contacts, wherein a first set of the solar cells in the array are aligned to be electrically connected in series through a back circuit sheet having an array of back metal contacts connected to corresponding back electrical contacts on the first set of solar cells, and through a front circuit sheet having an array of front metal contacts connected to corresponding front electrical contacts on the first set of solar cells. Electrical connections may be made in a lamination step, in which an encapsulant polymer flows into gaps and an interconnect material connects the circuits to form the monolithic solar cell panel assembly.
摘要翻译：为单片太阳能电池板组件提供了装置和装配方法。组件包括具有前电触头和背电触头的太阳能电池阵列，其中阵列中的第一组太阳能电池被对准以通过背电路片串联电连接，所述背板具有连接到在第一组太阳能电池上的相应的后部电触点，以及通过连接到第一组太阳能电池组上的对应的前部电触点的前部金属触点阵列的前部电路板。电连接可以在层压步骤中进行，其中密封剂聚合物流入间隙，并且互连材料连接电路以形成单片太阳能电池面板组件。

9. 发明申请

WO2011035268A2 THRESHOLD ADJUSTMENT IMPLANTS FOR REDUCING SURFACE RECOMBINATION IN SOLAR CELLS 审中-公开
标题翻译：用于减少太阳能电池表面重组的阈值调整植入物
公开(公告)号：WO2011035268A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049537
申请日：2010-09-20
申请人： APPLIED MATERIALS, INC. , GEE, James M. , KUMAR, Prabhat
发明人： GEE, James M. , KUMAR, Prabhat
IPC分类号： H01L31/042
CPC分类号： H01L31/022458 , H01L31/0288 , Y02E10/50
摘要： Embodiments of the invention relate to methods of forming solar cell devices to reduce recombination losses and solar cell devices made by such methods, for example back contact solar cells, such as emitter-wrap-through (EWT) solar cells. The methods may include disposing an amount of impurities into a charge compensating region formed on a rear surface of a substrate and forming a rear surface passivation layer over at least a portion of the charge compensating region, wherein the amount of the impurities disposed in the charge compensating region is selected to compensate for an amount of charge formed in the rear surface passivation layer.
摘要翻译：本发明的实施例涉及形成太阳能电池器件以减少复合损失的方法以及通过这种方法制造的太阳能电池器件，例如背接触太阳能电池，诸如发射极穿透（EWT）太阳能电池。该方法可以包括将一定量的杂质布置到形成在衬底的后表面上的电荷补偿区中，并且在电荷补偿区的至少一部分上方形成后表面钝化层，其中布置在电荷中的杂质的量补偿区域被选择以补偿在后表面钝化层中形成的电荷量。

10. 发明申请

WO2022108789A1 RING FOR SUBSTRATE EXTREME EDGE PROTECTION 审中-公开
公开(公告)号：WO2022108789A1
公开(公告)日：2022-05-27
申请号：PCT/US2021/058640
申请日：2021-11-09
申请人： APPLIED MATERIALS, INC.
发明人： SCHWARZ, Benjamin , WILLWERTH, Michael D. , MITHUN, Aditi , KUMAR, Prabhat , MATHEW, Grace , SCHMID, Andreas
IPC分类号： H01L21/687 , H01L21/67 , H01L21/683 , H01J37/32
摘要： Embodiments of the present disclosure provide a method and an apparatus for processing a substrate. The apparatus has a ring assembly. The ring assembly has an edge ring and a shadow ring. The edge ring has a ring shaped body. The edge ring body has a top surface and a bottom surface. Pin holes extend through the edge ring body from the top surface to the bottom surface. The shadow ring has a ring shaped body. The shadow ring body has an upper surface and a lower surface. Sockets are formed on the lower surface, wherein the sockets in the shadow ring body align with the pin holes in the edge ring body.

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