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1. 发明申请

WO2013062734A1 MONOLOTHIC MODULE ASSEMBLY FOR STANDARD CRYSTALLINE SILICON SOLAR CELLS 审中-公开
标题翻译：标准晶体硅太阳能电池单体组件
公开(公告)号：WO2013062734A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/059011
申请日：2012-10-05
申请人： APPLIED MATERIALS, INC. , KUMAR, Prabhat , PAAK, Sunhom , GEE, James M.
发明人： KUMAR, Prabhat , PAAK, Sunhom , GEE, James M.
IPC分类号： H01L31/05
CPC分类号： H01L31/0504 , H01L31/0512 , Y02E10/50
摘要： Apparatuses and assembly methods are provided for a monolithic solar cell panel assembly. The assembly comprises an array of solar cells having front electrical contacts and back electrical contacts, wherein a first set of the solar cells in the array are aligned to be electrically connected in series through a back circuit sheet having an array of back metal contacts connected to corresponding back electrical contacts on the first set of solar cells, and through a front circuit sheet having an array of front metal contacts connected to corresponding front electrical contacts on the first set of solar cells. Electrical connections may be made in a lamination step, in which an encapsulant polymer flows into gaps and an interconnect material connects the circuits to form the monolithic solar cell panel assembly.
摘要翻译：为单片太阳能电池板组件提供了装置和装配方法。组件包括具有前电触头和背电触头的太阳能电池阵列，其中阵列中的第一组太阳能电池被对准以通过背电路片串联电连接，所述背板具有连接到在第一组太阳能电池上的相应的后部电触点，以及通过连接到第一组太阳能电池组上的对应的前部电触点的前部金属触点阵列的前部电路板。电连接可以在层压步骤中进行，其中密封剂聚合物流入间隙，并且互连材料连接电路以形成单片太阳能电池面板组件。

2. 发明申请

WO2011035268A2 THRESHOLD ADJUSTMENT IMPLANTS FOR REDUCING SURFACE RECOMBINATION IN SOLAR CELLS 审中-公开
标题翻译：用于减少太阳能电池表面重组的阈值调整植入物
公开(公告)号：WO2011035268A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049537
申请日：2010-09-20
申请人： APPLIED MATERIALS, INC. , GEE, James M. , KUMAR, Prabhat
发明人： GEE, James M. , KUMAR, Prabhat
IPC分类号： H01L31/042
CPC分类号： H01L31/022458 , H01L31/0288 , Y02E10/50
摘要： Embodiments of the invention relate to methods of forming solar cell devices to reduce recombination losses and solar cell devices made by such methods, for example back contact solar cells, such as emitter-wrap-through (EWT) solar cells. The methods may include disposing an amount of impurities into a charge compensating region formed on a rear surface of a substrate and forming a rear surface passivation layer over at least a portion of the charge compensating region, wherein the amount of the impurities disposed in the charge compensating region is selected to compensate for an amount of charge formed in the rear surface passivation layer.
摘要翻译：本发明的实施例涉及形成太阳能电池器件以减少复合损失的方法以及通过这种方法制造的太阳能电池器件，例如背接触太阳能电池，诸如发射极穿透（EWT）太阳能电池。该方法可以包括将一定量的杂质布置到形成在衬底的后表面上的电荷补偿区中，并且在电荷补偿区的至少一部分上方形成后表面钝化层，其中布置在电荷中的杂质的量补偿区域被选择以补偿在后表面钝化层中形成的电荷量。

3. 发明申请

WO2011035153A2 LASER DRILLING OF VIAS IN BACK CONTACT SOLAR CELLS 审中-公开
标题翻译：激光在背部接触太阳能电池中进行激光钻孔
公开(公告)号：WO2011035153A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049329
申请日：2010-09-17
申请人： APPLIED MATERIALS, INC. , FRANKLIN, Jeff , GEE, James M.
发明人： FRANKLIN, Jeff , GEE, James M.
IPC分类号： H01L31/18 , H01L31/042 , B23K26/36
CPC分类号： B23K26/082 , B23K26/0665 , B23K26/382 , B23K26/40 , B23K2203/50 , H01L31/022458 , Y02E10/50
摘要： Embodiments of the invention relate to methods and apparatus for laser drilling holes in a silicon substrate during the fabrication of back contact solar cells, such as emitter-wrap-through (EWT) solar cells. In one embodiment, the method and apparatus use a short focal length flat field lens and a dynamic scanning technique to accomplish single pulse drilling in the silicon substrate. The method and apparatus result in increased speed and quality of holes in an EWT solar cell substrate as compared to conventional apparatus and processes.
摘要翻译：本发明的实施例涉及用于在背接触太阳能电池（诸如发射体穿透（EWT）太阳能电池）的制造期间在硅衬底中激光钻孔的方法和装置。在一个实施例中，该方法和设备使用短焦距平场透镜和动态扫描技术来完成硅衬底中的单脉冲钻孔。与常规设备和工艺相比，该方法和设备导致EWT太阳能电池基板中孔的速度和质量提高。

4. 发明申请

WO2011143449A2 METHOD OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELLS USING EPITAXIAL DEPOSITION 审中-公开
标题翻译：使用外延沉积法制造晶体硅太阳能电池的方法
公开(公告)号：WO2011143449A2
公开(公告)日：2011-11-17
申请号：PCT/US2011/036279
申请日：2011-05-12
申请人： APPLIED MATERIALS, INC. , GEE, James M. , GAY, Charles , PATIBANDLA, Nag B. , NALAMASU, Omkaram , SINGH, Kaushal K.
发明人： GEE, James M. , GAY, Charles , PATIBANDLA, Nag B. , NALAMASU, Omkaram , SINGH, Kaushal K.
IPC分类号： H01L31/042 , H01L31/18 , H01L31/0236
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.
摘要翻译：本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

5. 发明申请

WO2013148047A1 DOPED AI PASTE FOR LOCAL ALLOYED JUNCTION FORMATION WITH LOW CONTACT RESISTANCE 审中-公开
标题翻译：用于局部合金接头形成的接触电阻低
公开(公告)号：WO2013148047A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/028149
申请日：2013-02-28
申请人： APPLIED MATERIALS, INC. , GEE, James M.
发明人： GEE, James M.
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/18 , H01L31/02167 , H01L31/022425 , H01L31/022458 , H01L31/032 , H01L31/068 , Y02E10/547
摘要： Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact doped with a Group III element is disposed on the passivation layer for removing current form the solar cell. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. An aluminum back contact doped with a Group III element is disposed on the passivation layer in a pattern covering the holes, and thermally processed to form a silicon-aluminum eutectic within the openings.
摘要翻译：本发明的实施方案通常涉及具有减少的载体重组的太阳能电池及其形成方法。太阳能电池具有共晶的局部接触和钝化层，其通过促进背面场（BSF）的形成来减少复合。掺杂有III族元素的图案化的铝背面触点设置在钝化层上以去除太阳能电池的电流。形成太阳能电池的方法包括在太阳能电池的背面上沉积包括氧化铝和氮化硅的钝化层，然后通过钝化层形成开口。掺杂有III族元素的铝后触点以覆盖孔的图案设置在钝化层上，并在开口内热处理以形成硅铝共晶体。

6. 发明申请

WO2010094010A3 LOW-CONCENTRATION FLAT PROFILE PHOTOVOLTAIC MODULES 审中-公开
公开(公告)号：WO2010094010A3
公开(公告)日：2010-08-19
申请号：PCT/US2010/024238
申请日：2010-02-15
申请人： APPLIED MATERIALS, INC. , GEE, James M. , ABOUDI, Manhal , BAGH, Fares
发明人： GEE, James M. , ABOUDI, Manhal , BAGH, Fares
IPC分类号： H01L31/042
摘要： The present invention generally relates to low-concentration photovoltaic modules. The photovoltaic modules may comprise a flexible backsheet having a plurality of electrically conductive circuit elements that have been embossed or imprinted to create optical features in the electrically conductive surface. The solar cells are then in electrical contact with the electrically conductive circuit elements to complete the photovoltaic module. By imprinting/embossing the electrically conductive circuit elements, incident solar radiation that would normally not reach the solar cells may be reflected and collected by the solar cells. Thus, substantially all of the solar radiation that is exposed to the photovoltaic module is collected by the solar cells of the photovoltaic module.

7. 发明申请

WO2013022912A2 FIXTURE FOR DRILLING VIAS IN BACK-CONTACT SOLAR CELLS 审中-公开
标题翻译：在背接触式太阳能电池中钻井VIAS的固定剂
公开(公告)号：WO2013022912A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/049898
申请日：2012-08-08
申请人： APPLIED MATERIALS, INC. , FRANKLIN, Jeffrey L. , GEE, James M.
发明人： FRANKLIN, Jeffrey L. , GEE, James M.
IPC分类号： H01L31/18 , H01L31/042 , B23K26/38
CPC分类号： H01L31/0682 , B23K26/382 , B23K26/40 , B23K37/0408 , B23K2201/40 , B23K2203/50 , B23K2203/52 , H01L31/022458 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods and systems for manufacturing back contact solar cells that have improved efficiency and device electrical properties, the solar cell device described herein includes an Emitter Wrap Through (EWT) solar cell that has plurality of laser drilled vias disposed in a spaced apart relationship to metal gridlines formed on a surface of the substrate. Solar cell structures that may benefit from the invention disclosed herein include back-contact solar cells, such as those in which both positive and negative contacts are formed only on the rear surface of the device.
摘要翻译：用于制造具有改进的效率和器件电特性的背接触太阳能电池的方法和系统，这里描述的太阳能电池器件包括具有多个激光穿孔通孔（EWT）太阳能电池，所述太阳能电池具有多个激光钻孔通孔以与衬底表面上形成的金属网格线隔开的关系。可从本文公开的发明受益的太阳能电池结构包括背接触太阳能电池，诸如仅在装置的后表面上形成正接触和负接触两者的背接触太阳能电池。

8. 发明申请

WO2012058053A2 MONOLITHIC MODULE ASSEMBLY USING BACK CONTACT SOLAR CELLS AND METAL RIBBON 审中-公开
标题翻译：使用反接触太阳能电池和金属RIBBON的单片模块组件
公开(公告)号：WO2012058053A2
公开(公告)日：2012-05-03
申请号：PCT/US2011/056617
申请日：2011-10-18
申请人： APPLIED MATERIALS, INC. , MEAKIN, David H. , BAGH, Fares , GEE, James M. , BOTTENBERG, William
发明人： MEAKIN, David H. , BAGH, Fares , GEE, James M. , BOTTENBERG, William
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/188 , B32B7/14 , B32B17/10018 , B32B17/10788 , B32B17/10807 , B32B17/10935 , B32B2307/202 , B32B2311/12 , B32B2311/24 , B32B2323/04 , B32B2327/12 , B32B2367/00 , H01L31/049 , H01L31/0516 , Y02E10/50 , Y10T156/1052 , Y10T156/1062 , Y10T156/1092 , Y10T156/1093
摘要： Embodiments of the invention contemplate the formation of a solar cell module comprising an array of interconnected solar cells that are formed using an automated processing sequence that is used to form a novel planar solar cell interconnect structure. In one embodiment, the module structure described herein includes a patterned adhesive layer that is disposed on a backsheet to receive and bond a plurality of conducting ribbons thereon. The substantially planar bonded conducting ribbons are then used to interconnect an array of solar cell devices to form a solar cell module that can be electrically connected to one or more external components, such as an electrical power grid, satellites, electronic devices or other similar power requiring units. Embodiments of the invention may further provide a roll-to-roll system that is configured to serially form a plurality of solar cell modules over different portions of a backsheet material received from a roll of backsheet material.
摘要翻译：本发明的实施例考虑了太阳能电池模块的形成，该太阳能电池模块包括使用用于形成新的平面太阳能电池互连结构的自动化处理顺序形成的互连太阳能电池阵列。在一个实施例中，本文所述的模块结构包括图案化的粘合剂层，其设置在底片上以在其上接收和粘合多个导电带。然后使用基本上平面的接合的导电带来互连太阳能电池器件的阵列以形成太阳能电池模块，该太阳能电池模块可以电连接到一个或多个外部组件，例如电力电网，卫星，电子设备或其它类似功率要求单位。本发明的实施例还可以提供卷对卷系统，其被配置为在从底片材料卷接收的底片材料的不同部分上串联地形成多个太阳能电池模块。

9. 发明申请

WO2015130334A1 SILICON SOLAR CELLS WITH EPITAXIAL EMITTERS 审中-公开
标题翻译：具有外延发射器的硅太阳电池
公开(公告)号：WO2015130334A1
公开(公告)日：2015-09-03
申请号：PCT/US2014/042333
申请日：2014-06-13
申请人： APPLIED MATERIALS, INC.
发明人： GEE, James M. , RENSHAW, John
IPC分类号： H01L31/0392 , H01L31/04 , H01L31/18
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the disclosure generally relate to forming solar cells having epitaxial emitters. The emitters of the solar cells, as well as the bases of the solar cells, are epitaxially grown in a process chamber using a template substrate to form an epitaxial substrate. During the formation process of the epitaxial substrate, dopants can be introduced into the process chamber to dope the emitters and the bases with desired dopant profiles and concentrations. In one example, the epitaxial material is silicon and the dopants are n-type and p-type dopants.
摘要翻译：本公开的实施例总体涉及形成具有外延发射器的太阳能电池。使用模板衬底在处理室中外延生长太阳能电池的发射极以及太阳能电池的基极以形成外延衬底。在外延衬底的形成过程中，可以将掺杂剂引入到处理室中，以期望的掺杂剂分布和浓度掺杂发射器和基极。在一个例子中，外延材料是硅，掺杂剂是n型和p型掺杂剂。

10. 发明申请

WO2015130672A1 SILICON SOLAR CELLS WITH EPITAXIAL EMITTERS 审中-公开
标题翻译：具有外延发射体的硅太阳能电池
公开(公告)号：WO2015130672A1
公开(公告)日：2015-09-03
申请号：PCT/US2015/017297
申请日：2015-02-24
申请人： APPLIED MATERIALS, INC.
发明人： GEE, James M. , RENSHAW, John
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the disclosure generally relate to forming solar cells having epitaxial emitters. The emitters of the solar cells, as well as the bases of the solar cells, are epitaxially grown in a process chamber using a template substrate to form an epitaxial substrate. During the formation process of the epitaxial substrate, dopants can be introduced into the process chamber to dope the emitters and the bases with desired dopant profiles and concentrations. In one example, the epitaxial material is silicon and the dopants are n-type and p-type dopants.
摘要翻译：本公开的实施例一般涉及形成具有外延发射体的太阳能电池。太阳能电池的发射体以及太阳能电池的基底在使用模板衬底的处理室中外延生长以形成外延衬底。在外延衬底的形成过程中，掺杂剂可以被引入到处理室中以掺杂所需的掺杂剂分布和浓度来掺杂发射体和碱。在一个示例中，外延材料是硅，掺杂剂是n型和p型掺杂剂。

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