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1. 发明申请

WO2015176751A1 DEPOSITION APPARATUS FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE AND METHOD FOR DEPOSITING A MATERIAL ON A SUBSTRATE 审中-公开
标题翻译：用于沉积基材上的材料的沉积装置和在基材上沉积材料的方法
公开(公告)号：WO2015176751A1
公开(公告)日：2015-11-26
申请号：PCT/EP2014/060360
申请日：2014-05-20
申请人： APPLIED MATERIALS, INC , ZILBAUER, Thomas Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans Georg , BENDER, Marcus
发明人： ZILBAUER, Thomas Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans Georg , BENDER, Marcus
IPC分类号： C23C14/56 , C23C14/34
CPC分类号： C23C14/568 , C23C14/3464 , C23C14/562
摘要： A deposition apparatus (300) for deposition of a material on a substrate is provided. The deposition apparatus (300) includes two or more processing chambers including a first processing chamber (310) and a second processing chamber (320); a substrate support (330) extending at least through the first processing chamber (310) and the second processing chamber (320); and two or more deposition source assemblies including a first deposition source assembly (350) in the first processing chamber (310) and a second deposition source assembly (360) in the second processing chamber (320). Each of the two or more deposition source assemblies includes at least one deposition source support (351, 361) configured to support at least one first deposition source and at least one process device. The at least one deposition source support (351, 361) is configured to be moveable at least between a first position and a second position. In the first position, the at least one first deposition source is oriented towards the substrate support (330), and, in the second position, the at least one process device is oriented towards the substrate support (330).
摘要翻译：提供了用于将材料沉积在基板上的沉积设备（300）。沉积装置（300）包括两个或多个处理室，包括第一处理室（310）和第二处理室（320）。至少延伸穿过第一处理室（310）和第二处理室（320）的衬底支撑件（330）; 以及包括第一处理室（310）中的第一沉积源组件（350）和第二处理室（320）中的第二沉积源组件（360）的两个或更多个沉积源组件。两个或更多个沉积源组件中的每一个包括被配置为支撑至少一个第一沉积源和至少一个处理装置的至少一个沉积源支撑件（351,361）。至少一个沉积源支撑件（351,361）构造成至少在第一位置和第二位置之间是可移动的。在第一位置，至少一个第一沉积源朝向衬底支撑件（330）定向，并且在第二位置，至少一个处理装置朝向衬底支撑件（330）取向。

2. 发明申请

WO2022194377A1 METHOD OF DEPOSITING MATERIAL ON A SUBSTRATE 审中-公开
公开(公告)号：WO2022194377A1
公开(公告)日：2022-09-22
申请号：PCT/EP2021/056964
申请日：2021-03-18
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , HELLMICH, Anke , BENDER, Marcus , CHOI, Soo Young , HINTERSCHUSTER, Reiner , MUNDORF, Christoph
发明人： ZILBAUER, Thomas Werner , HELLMICH, Anke , BENDER, Marcus , CHOI, Soo Young , HINTERSCHUSTER, Reiner , MUNDORF, Christoph
IPC分类号： C23C14/35 , C23C14/56 , C23C14/34 , H01J37/34
摘要： A method of depositing at least one material on a substrate is described. The method includes a first deposition including: sputtering from a first and a second rotary target through an aperture, the aperture being adjustable and having less than a first size. The first rotary target has a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. The method includes a second deposition on top of the first deposition. The second deposition includes: sputtering from the first and the second rotary target through the aperture, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly provides a plasma confinement in a third direction. The second magnet assembly provides a plasma confinement in a fourth direction. At least one of the third or the fourth direction deviate from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value.

3. 发明申请

WO2015014411A1 HOLDING ARRANGEMENT FOR SUBSTRATES 审中-公开
标题翻译：基板保持布置
公开(公告)号：WO2015014411A1
公开(公告)日：2015-02-05
申请号：PCT/EP2013/066294
申请日：2013-08-02
申请人： APPLIED MATERIALS, INC. , BRÜNING, Andre , HINTERSCHUSTER, Reiner , WOLF, Hans Georg , ZILBAUER, Thomas Werner
发明人： BRÜNING, Andre , HINTERSCHUSTER, Reiner , WOLF, Hans Georg , ZILBAUER, Thomas Werner
IPC分类号： C23C14/50 , C03C17/00 , B65G49/06 , C23C16/458
CPC分类号： C23C16/4585 , C23C14/50 , C23C16/4587
摘要： A holding arrangement (10) for holding a substrate (20) during vacuum layer deposition is provided. The holding arrangement (10) includes a frame (30) having two or more frame elements (31, 32, 33, 34), the frame elements (31, 32, 33, 34) forming an aperture opening, and elastic means (40) configured to provide a clamping force acting against portions of the substrate edges for clamping the substrate (20) at said substrate edges.
摘要翻译：提供了一种用于在真空层沉积期间保持基板（20）的保持装置（10）。保持装置（10）包括具有两个或多个框架元件（31,32,33,34）的框架（30），形成开口的框架元件（31,32,33,34）和弹性装置（40 ），其被配置成提供作用于所述基板边缘的部分的夹紧力，以将所述基板（20）夹持在所述基板边缘。

4. 发明申请

WO2017005291A1 DEPOSITION SOURCE FOR SPUTTER DEPOSITION, DEPOSITION APPARATUS AND METHOD OF ASSEMBLING THE SOURCE 审中-公开
标题翻译：溅射沉积沉积源，沉积装置和组装源的方法
公开(公告)号：WO2017005291A1
公开(公告)日：2017-01-12
申请号：PCT/EP2015/065369
申请日：2015-07-06
申请人： APPLIED MATERIALS, INC. , KELLER, Stefan , ZILBAUER, Thomas Werner , HELLMICH, Anke
发明人： KELLER, Stefan , ZILBAUER, Thomas Werner , HELLMICH, Anke
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3408 , C23C14/35 , H01J37/3444 , H01J37/3461 , H01J37/347
摘要： A deposition source (100) for sputter deposition in a vacuum chamber is described. The deposition source includes a target (110) for providing a material to be deposited during the sputter deposition; an RF power supply (120) for providing RF power to the target (110); a magnetron (130); a power connector assembly (140) connecting the RF power supply (120) with the target (110); a RF power return path assembly (166) for providing a return path from the target to the RF power supply, wherein the power connector assembly (140) and/or the return path assembly (166) has an asymmetric inductive and/or capacitive mass; and a plate (150) arranged at a side (132A, 132B) of the magnetron (130) for compensating the asymmetric inductive and/or capacitive mass.
摘要翻译：描述了用于在真空室中溅射沉积的沉积源（100）。沉积源包括用于在溅射沉积期间提供要沉积的材料的靶（110）; 用于向所述目标（110）提供RF功率的RF电源（120）; 磁控管（130）; 电源连接器组件（140），其将所述RF电源（120）与所述目标（110）连接; 用于提供从所述目标到所述RF电源的返回路径的RF功率返回路径组件（166），其中所述电源连接器组件（140）和/或所述返回路径组件（166）具有不对称的感应和/或电容质量 ; 以及布置在所述磁控管（130）的侧面（132A，132B）处以补偿所述不对称感应和/或电容质量的板（150）。

5. 发明申请

WO2018082792A1 CARRIER FOR HOLDING A SUBSTRATE, USE OF THE CARRIER IN A PROCESSING SYSTEM, PROCESSING SYSTEM EMPLOYING THE CARRIER, AND METHOD FOR CONTROLLING A TEMPERATURE OF A SUBSTRATE 审中-公开
标题翻译：用于保持基板的载体，载体在处理系统中的使用，使用载体的处理系统以及用于控制基板的温度的方法
公开(公告)号：WO2018082792A1
公开(公告)日：2018-05-11
申请号：PCT/EP2016/076830
申请日：2016-11-07
申请人： APPLIED MATERIALS, INC. , LAU, Simon , WOLF, Gerhard , HINTERSCHUSTER, Reiner , ZILBAUER, Thomas Werner
发明人： LAU, Simon , WOLF, Gerhard , HINTERSCHUSTER, Reiner , ZILBAUER, Thomas Werner
IPC分类号： H01L21/673 , C23C14/50 , C23C14/56 , C23C16/46 , C23C16/458 , C23C16/54
摘要： A carrier (100) for holding a substrate is described. The carrier (100) includes a carrier body (110) having a first surface (111), and an adhesive arrangement (120) provided on the first surface (111). The carrier body (110) includes one or more conduits (115) configured for providing a gas into the adhesive arrangement (120). Further, a method for controlling a temperature of a substrate is described. The method includes providing a carrier as described herein; supplying a gas through the one or more conduits into the adhesive arrangement; and providing the gas to a backside of the substrate attached to the adhesive arrangement.
摘要翻译：描述用于保持衬底的载体（100）。载体（100）包括具有第一表面（111）的载体主体（110）和设置在第一表面（111）上的粘合剂装置（120）。载体主体（110）包括一个或多个导管（115），其被配置用于将气体提供到粘合剂装置（120）中。此外，描述了用于控制衬底温度的方法。该方法包括提供如本文所述的载体; 通过一个或多个导管将气体供应到粘合剂装置中; 并将气体提供给附着在粘合剂装置上的基材的背面。

6. 发明申请

WO2017050350A1 SUBSTRATE CARRIER, AND SPUTTER DEPOSITION APPARATUS AND METHOD USING THE SAME 审中-公开
标题翻译：基板载体和溅射沉积装置及其使用方法
公开(公告)号：WO2017050350A1
公开(公告)日：2017-03-30
申请号：PCT/EP2015/071609
申请日：2015-09-21
申请人： APPLIED MATERIALS, INC. , BRÜNING, Andre , KELLER, Stefan , HINTERSCHUSTER, Reiner , ZILBAUER, Thomas Werner
发明人： BRÜNING, Andre , KELLER, Stefan , HINTERSCHUSTER, Reiner , ZILBAUER, Thomas Werner
IPC分类号： C23C14/50 , H01J37/32 , H01J37/34 , H01L21/677 , H01L21/687
CPC分类号： H01J37/32715 , C23C14/34 , C23C14/50 , C23C14/562 , H01J37/32733 , H01J37/32752 , H01J37/3405 , H01L21/67706 , H01L21/67709 , H01L21/67712 , H01L21/6776 , H01L21/68757 , H01L21/68764 , H01L21/68771
摘要： A carrier (100) for supporting at least one substrate during a sputter deposition process is provided. The carrier (100) includes a non-conductive carrier body (102) having a first end (111) and an opposing second end (112); an electrically insulated first guiding device (120) provided at the first end (111) of the ceramic carrier body (102); and an electrically insulated second guiding device (130) provided at the second end (112) of the ceramic carrier body (102).
摘要翻译：提供了一种用于在溅射沉积工艺期间支撑至少一个基板的载体（100）。载体（100）包括具有第一端（111）和相对的第二端（112）的非导电载体主体（102）。设置在陶瓷载体主体（102）的第一端（111）处的电绝缘的第一引导装置（120）; 以及设置在陶瓷载体主体（102）的第二端（112）处的电绝缘的第二引导装置（130）。

7. 发明申请

WO2014127845A1 DEPOSITION APPARATUS WITH GAS SUPPLY AND METHOD FOR DEPOSITING MATERIAL 审中-公开
标题翻译：具有气体供应的沉积装置和沉积材料的方法
公开(公告)号：WO2014127845A1
公开(公告)日：2014-08-28
申请号：PCT/EP2013/053720
申请日：2013-02-25
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , BENDER, Marcus
发明人： ZILBAUER, Thomas Werner , BENDER, Marcus
IPC分类号： C23C14/00 , C23C14/22 , H01L21/02
CPC分类号： C23C14/0036 , C23C14/0047 , C23C14/0063 , C23C14/06 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/0694 , C23C14/081 , C23C14/083 , C23C14/086
摘要： An apparatus for depositing a material on a substrate (310) is described. The apparatus includes a vacuum chamber (300); a substrate receiving portion (305) in the vacuum chamber for receiving the substrate during deposition of the material; a target support (320) configured to hold a target (330) during deposition of the material on the substrate (305); a plasma generating device in the vacuum chamber (300) for generating a plasma between the substrate receiving portion (305) and the target support (320); and a first gas inlet (360) for providing a supersonic stream of a gas (365), wherein the gas inlet is directed towards the substrate receiving portion (305). Further, a method for depositing a material on a substrate (310) in a vacuum chamber (300) is described. The method includes forming a plasma between the substrate (310) and a target (330); releasing particles (335) from the target (330) using the plasma; and directing a supersonic stream of gas (365) towards the substrate surface, on which the material is to be deposited.
摘要翻译：描述了一种用于在衬底（310）上沉积材料的装置。该设备包括真空室（300）; 真空室中的衬底接收部分（305），用于在材料沉积期间接收衬底; 目标支撑件（320），其配置成在所述材料沉积在所述基底（305）上时保持目标（330）; 用于在所述基板接收部分（305）和所述目标支撑件（320）之间产生等离子体的所述真空室（300）中的等离子体产生装置; 和用于提供气体（365）的超音速流的第一气体入口（360），其中所述气体入口指向所述衬底接收部分（305）。此外，描述了在真空室（300）中的衬底（310）上沉积材料的方法。该方法包括在衬底（310）和靶（330）之间形成等离子体; 使用等离子体从靶（330）释放颗粒（335）; 并将气体（365）的超音速流引向所述材料将要沉积的衬底表面。

8. 发明申请

WO2022069050A1 METHOD OF DEPOSITING A MATERIAL ON A SUBSTRATE 审中-公开
公开(公告)号：WO2022069050A1
公开(公告)日：2022-04-07
申请号：PCT/EP2020/077540
申请日：2020-10-01
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner
发明人： ZILBAUER, Thomas Werner
IPC分类号： H01J37/34 , H01J37/32 , C23C14/35
摘要： A method of depositing a material on a substrate is described. The method includes sputtering at least a component of the material from a first rotary target having a first magnet assembly and a second magnet assembly. The first magnet assembly provides a first plasma confinement in a first direction facing towards a second rotary target, at least three magnetic poles of the first magnet assembly facing the first plasma confinement. The second magnet assembly provides a second plasma confinement in a second direction facing towards a third rotary target, at least three magnetic poles of the second magnet assembly facing the second plasma confinement.

9. 发明申请

WO2018103852A1 HOLDING ARRANGEMENT FOR HOLDING A SUBSTRATE, CARRIER INCLUDING THE HOLDING ARRANGEMENT, METHOD FOR HOLDING A SUBSTRATE, AND METHOD FOR RELEASING A SUBSTRATE 审中-公开
公开(公告)号：WO2018103852A1
公开(公告)日：2018-06-14
申请号：PCT/EP2016/080290
申请日：2016-12-08
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner
发明人： ZILBAUER, Thomas Werner
IPC分类号： C23C14/50 , C23C16/458 , B65G49/06
CPC分类号： C23C14/50 , B65G49/061 , B65G2249/045 , C23C16/4581 , C23C16/4585
摘要： A holding arrangement (100) for holding a substrate (101) is described. The holding arrangement includes a substrate support (110) having a substrate support surface (111) configured for supporting the substrate (101); and a substrate tensioning device (120) configured for applying a force between the substrate (101) and the substrate support surface (111), wherein the substrate tensioning device (120) comprises at least one element (130) having a surface (131) with an adhesive arrangement (140) configured for attaching the substrate (101).

10. 发明申请

WO2017016575A1 COOLING AND UTILIZATION OPTIMIZATION OF HEAT SENSITIVE BONDED METAL TARGETS 审中-公开
标题翻译：热敏粘结金属靶材的冷却和利用优化
公开(公告)号：WO2017016575A1
公开(公告)日：2017-02-02
申请号：PCT/EP2015/067047
申请日：2015-07-24
申请人： APPLIED MATERIALS, INC. , GRIMM, Helmut , ZILBAUER, Thomas Werner
发明人： GRIMM, Helmut , ZILBAUER, Thomas Werner
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35
CPC分类号： C23C14/3407 , C23C14/165 , C23C14/35 , H01J37/3408 , H01J37/3417 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： A sputtering source (100) is described. The sputtering source includes a backing support (102) having a target receiving surface (112) and a further surface (110) opposing the target receiving surface, and at least one magnet assembly (115) provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess (120), wherein the recess is provided opposite to the magnet assembly.
摘要翻译：描述溅射源（100）。溅射源包括具有目标接收表面（112）和与目标接收表面相对的另一表面（110）的背衬支撑件（102）和与另外表面相邻设置的至少一个磁体组件（115），其中目标接收背衬支撑件的表面具有至少一个凹部（120），其中凹部设置成与磁体组件相对。

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