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1. 发明申请

WO2015176751A1 DEPOSITION APPARATUS FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE AND METHOD FOR DEPOSITING A MATERIAL ON A SUBSTRATE 审中-公开
标题翻译：用于沉积基材上的材料的沉积装置和在基材上沉积材料的方法
公开(公告)号：WO2015176751A1
公开(公告)日：2015-11-26
申请号：PCT/EP2014/060360
申请日：2014-05-20
申请人： APPLIED MATERIALS, INC , ZILBAUER, Thomas Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans Georg , BENDER, Marcus
发明人： ZILBAUER, Thomas Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans Georg , BENDER, Marcus
IPC分类号： C23C14/56 , C23C14/34
CPC分类号： C23C14/568 , C23C14/3464 , C23C14/562
摘要： A deposition apparatus (300) for deposition of a material on a substrate is provided. The deposition apparatus (300) includes two or more processing chambers including a first processing chamber (310) and a second processing chamber (320); a substrate support (330) extending at least through the first processing chamber (310) and the second processing chamber (320); and two or more deposition source assemblies including a first deposition source assembly (350) in the first processing chamber (310) and a second deposition source assembly (360) in the second processing chamber (320). Each of the two or more deposition source assemblies includes at least one deposition source support (351, 361) configured to support at least one first deposition source and at least one process device. The at least one deposition source support (351, 361) is configured to be moveable at least between a first position and a second position. In the first position, the at least one first deposition source is oriented towards the substrate support (330), and, in the second position, the at least one process device is oriented towards the substrate support (330).
摘要翻译：提供了用于将材料沉积在基板上的沉积设备（300）。沉积装置（300）包括两个或多个处理室，包括第一处理室（310）和第二处理室（320）。至少延伸穿过第一处理室（310）和第二处理室（320）的衬底支撑件（330）; 以及包括第一处理室（310）中的第一沉积源组件（350）和第二处理室（320）中的第二沉积源组件（360）的两个或更多个沉积源组件。两个或更多个沉积源组件中的每一个包括被配置为支撑至少一个第一沉积源和至少一个处理装置的至少一个沉积源支撑件（351,361）。至少一个沉积源支撑件（351,361）构造成至少在第一位置和第二位置之间是可移动的。在第一位置，至少一个第一沉积源朝向衬底支撑件（330）定向，并且在第二位置，至少一个处理装置朝向衬底支撑件（330）取向。

2. 发明申请

WO2015176750A1 DEPOSITION APPARATUS FOR DEPOSITION OF A MATERIAL ON A SUBSTRATE AND METHOD FOR DEPOSITING A MATERIAL ON A SUBSTRATE 审中-公开
标题翻译：用于沉积基材上的材料的沉积装置和在基材上沉积材料的方法
公开(公告)号：WO2015176750A1
公开(公告)日：2015-11-26
申请号：PCT/EP2014/060359
申请日：2014-05-20
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas, Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans, Georg , BENDER, Marcus
发明人： ZILBAUER, Thomas, Werner , HELLMICH, Anke , HINTERSCHUSTER, Reiner , MÜHLFELD, Uwe , STOCK, Bernhard , WOLF, Hans, Georg , BENDER, Marcus
IPC分类号： C23C14/56 , C23C16/44 , C23C16/54
CPC分类号： C23C14/56 , C23C16/4412 , C23C16/54
摘要： A deposition apparatus (300) for deposition of a material on a substrate is provided. The deposition apparatus (300) includes a first processing chamber (310) and a second processing chamber (320); at least one first deposition source (311) in the first processing chamber (310) and at least one second deposition source (321) in the second processing chamber (320); and at least one first shield device (350). The at least one first shield device (350) is configured to be moveable at least between a first position and a second position, wherein the at least one first shield device (350) is configured to shield the at least one first deposition source (311) when the at least one first shield device (350) is in the first position. The at least one first shield device (350) is configured to be moveable at least between the first processing chamber (310) and the second processing chamber (320).
摘要翻译：提供了用于将材料沉积在基板上的沉积设备（300）。沉积设备（300）包括第一处理室（310）和第二处理室（320）; 第一处理室（310）中的至少一个第一沉积源（311）和第二处理室（320）中的至少一个第二沉积源（321）; 和至少一个第一屏蔽装置（350）。所述至少一个第一屏蔽装置（350）被配置为至少在第一位置和第二位置之间可移动，其中所述至少一个第一屏蔽装置（350）被配置为屏蔽所述至少一个第一沉积源），当所述至少一个第一屏蔽装置（350）处于所述第一位置时。所述至少一个第一屏蔽装置（350）被配置为至少在所述第一处理室（310）和所述第二处理室（320）之间可移动。

3. 发明申请

WO2022194377A1 METHOD OF DEPOSITING MATERIAL ON A SUBSTRATE 审中-公开
公开(公告)号：WO2022194377A1
公开(公告)日：2022-09-22
申请号：PCT/EP2021/056964
申请日：2021-03-18
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , HELLMICH, Anke , BENDER, Marcus , CHOI, Soo Young , HINTERSCHUSTER, Reiner , MUNDORF, Christoph
发明人： ZILBAUER, Thomas Werner , HELLMICH, Anke , BENDER, Marcus , CHOI, Soo Young , HINTERSCHUSTER, Reiner , MUNDORF, Christoph
IPC分类号： C23C14/35 , C23C14/56 , C23C14/34 , H01J37/34
摘要： A method of depositing at least one material on a substrate is described. The method includes a first deposition including: sputtering from a first and a second rotary target through an aperture, the aperture being adjustable and having less than a first size. The first rotary target has a first magnet assembly providing a plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly providing a plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle of less than a first value. The method includes a second deposition on top of the first deposition. The second deposition includes: sputtering from the first and the second rotary target through the aperture, the aperture having at least a second size, the second size being larger than the first size. The first magnet assembly provides a plasma confinement in a third direction. The second magnet assembly provides a plasma confinement in a fourth direction. At least one of the third or the fourth direction deviate from being parallel to the substrate plane by an angle of at least a second value, the second value being larger than the first value.

4. 发明申请

WO2014127845A1 DEPOSITION APPARATUS WITH GAS SUPPLY AND METHOD FOR DEPOSITING MATERIAL 审中-公开
标题翻译：具有气体供应的沉积装置和沉积材料的方法
公开(公告)号：WO2014127845A1
公开(公告)日：2014-08-28
申请号：PCT/EP2013/053720
申请日：2013-02-25
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , BENDER, Marcus
发明人： ZILBAUER, Thomas Werner , BENDER, Marcus
IPC分类号： C23C14/00 , C23C14/22 , H01L21/02
CPC分类号： C23C14/0036 , C23C14/0047 , C23C14/0063 , C23C14/06 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/0694 , C23C14/081 , C23C14/083 , C23C14/086
摘要： An apparatus for depositing a material on a substrate (310) is described. The apparatus includes a vacuum chamber (300); a substrate receiving portion (305) in the vacuum chamber for receiving the substrate during deposition of the material; a target support (320) configured to hold a target (330) during deposition of the material on the substrate (305); a plasma generating device in the vacuum chamber (300) for generating a plasma between the substrate receiving portion (305) and the target support (320); and a first gas inlet (360) for providing a supersonic stream of a gas (365), wherein the gas inlet is directed towards the substrate receiving portion (305). Further, a method for depositing a material on a substrate (310) in a vacuum chamber (300) is described. The method includes forming a plasma between the substrate (310) and a target (330); releasing particles (335) from the target (330) using the plasma; and directing a supersonic stream of gas (365) towards the substrate surface, on which the material is to be deposited.
摘要翻译：描述了一种用于在衬底（310）上沉积材料的装置。该设备包括真空室（300）; 真空室中的衬底接收部分（305），用于在材料沉积期间接收衬底; 目标支撑件（320），其配置成在所述材料沉积在所述基底（305）上时保持目标（330）; 用于在所述基板接收部分（305）和所述目标支撑件（320）之间产生等离子体的所述真空室（300）中的等离子体产生装置; 和用于提供气体（365）的超音速流的第一气体入口（360），其中所述气体入口指向所述衬底接收部分（305）。此外，描述了在真空室（300）中的衬底（310）上沉积材料的方法。该方法包括在衬底（310）和靶（330）之间形成等离子体; 使用等离子体从靶（330）释放颗粒（335）; 并将气体（365）的超音速流引向所述材料将要沉积的衬底表面。

5. 发明申请

WO2015090380A1 AC POWER CONNECTOR, SPUTTERING APPARATUS AND METHOD THEREFOR 审中-公开
标题翻译：交流电源连接器，溅射装置及其方法
公开(公告)号：WO2015090380A1
公开(公告)日：2015-06-25
申请号：PCT/EP2013/077106
申请日：2013-12-18
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank , HELLMICH, Anke , KELLER, Stefan , BENDER, Marcus
发明人： SCHNAPPENBERGER, Frank , HELLMICH, Anke , KELLER, Stefan , BENDER, Marcus
IPC分类号： H01J37/32 , H01J37/34 , C23C14/34 , H01G5/04 , H01G5/06 , H01G5/16 , H01R24/38 , H01R24/40 , H03H7/38
CPC分类号： H01J37/32183 , C23C14/3407 , H01G5/04 , H01G5/12 , H01J37/32577 , H01J37/3405 , H01J37/3435 , H01J37/3444 , H01J2237/20214 , H01J2237/3322 , H03H7/004
摘要： An AC power connector (10) for connecting an AC power supply (20) with a device (30) is provided. The AC power connector includes at least one first element (11) connectable with the AC power supply and at least one second element (12) connectable with the device, the first element and the second elements being arranged at a first distance (13) with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.
摘要翻译：提供了用于将AC电源（20）与设备（30）连接的AC电源连接器（10）。 AC电源连接器包括可与AC电源连接的至少一个第一元件（11）和可与该装置连接的至少一个第二元件（12），第一元件和第二元件被布置在第一距离（13）处，彼此相对于限定电容，其中所述至少一个第一元件和所述至少一个第二元件可相对于彼此旋转，其中所述第一元件和所述第二元件被配置为在所述第一元件和所述至少一个第二元件之间传递AC电力至少一个第一元件和至少一个第二元件。

6. 发明申请

WO2015158391A1 EDGE UNIFORMITY IMPROVEMENT IN PVD ARRAY COATERS 审中-公开
标题翻译： PVD阵列涂层的边缘均匀性改进
公开(公告)号：WO2015158391A1
公开(公告)日：2015-10-22
申请号：PCT/EP2014/057920
申请日：2014-04-17
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
发明人： SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
IPC分类号： H01J37/34 , H01J37/32 , C23C14/00
CPC分类号： H01J37/347 , C23C14/352 , C23C14/542 , C23C14/568 , H01J37/32385 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/3464
摘要： An apparatus for deposition of material on a substrate is described. The apparatus includes a deposition array (222) having three or more cathodes (122), wherein the deposition array comprises a first outer deposition assembly (301) comprising at least a first cathode of the three or more cathodes; a second outer deposition assembly (302) opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly (303) comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) is configured for depositing the material at a higher rate than the inner deposition assembly (303) on the same substrate during the same time.
摘要翻译：描述了用于在衬底上沉积材料的装置。该装置包括具有三个或更多个阴极（122）的沉积阵列（222），其中沉积阵列包括包含三个或更多个阴极的至少第一阴极的第一外部沉积组件（301）与第一外部沉积组件相对的第二外部沉积组件（302），其包括三个或更多个阴极的至少第二阴极，以及内部沉积组件（303），其包括位于第一外部沉积组件和第二外部沉积组件之间的至少一个内部阴极第二外部沉积组件。第一外部沉积组件（301）和第二外部沉积组件（302）中的至少一个被配置用于在相同的时间内以比内部沉积组件（303）更高的速率沉积材料。

7. 发明申请

WO2021228359A1 METHOD OF DEPOSITING LAYERS OF A THIN-FILM TRANSISTOR ON A SUBSTRATE AND SPUTTER DEPOSITION APPARATUS 审中-公开
公开(公告)号：WO2021228359A1
公开(公告)日：2021-11-18
申请号：PCT/EP2020/063055
申请日：2020-05-11
申请人： APPLIED MATERIALS, INC. , TSAI, Yun-Chu , YIM, Dong Kil , LIM, Rodney Shunleong , GRILLMAYER, Jürgen , KIM, Jung Bae , BENDER, Marcus
发明人： TSAI, Yun-Chu , YIM, Dong Kil , LIM, Rodney Shunleong , GRILLMAYER, Jürgen , KIM, Jung Bae , BENDER, Marcus
IPC分类号： C23C14/56 , C23C14/34 , C23C14/08 , H01J37/34 , H01L29/00
摘要： A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.

8. 发明申请

WO2018145751A1 METHOD FOR VACUUM PROCESSING OF A SUBSTRATE, THIN FILM TRANSISTOR, AND APPARATUS FOR VACUUM PROCESSING OF A SUBSTRATE 审中-公开
公开(公告)号：WO2018145751A1
公开(公告)日：2018-08-16
申请号：PCT/EP2017/052884
申请日：2017-02-09
申请人： APPLIED MATERIALS, INC. , HANIKA, Markus , OLSON, Joseph C. , KURUNCZI, Peter F. , YIM, Dong-Kil , BENDER, Marcus
发明人： HANIKA, Markus , OLSON, Joseph C. , KURUNCZI, Peter F. , YIM, Dong-Kil , BENDER, Marcus
IPC分类号： C23C14/02 , C23C14/48 , C23C14/56 , H01L21/26 , H01L21/687
CPC分类号： C23C14/02 , C23C14/022 , C23C14/48 , C23C14/568 , H01L21/26 , H01L21/67173 , H01L21/67709 , H01L21/67712 , H01L21/6776 , H01L21/6831
摘要： A method for vacuum processing of a substrate (10) is provided. The method includes irradiating the substrate (10) or a first material layer on the substrate (10) with particles using an implantation source (130) provided in a processing region (110), and moving the substrate (10) through the processing region (110) along a transportation path (20) while the substrate (10) or the first material layer is irradiated with the particles.

9. 发明申请

WO2016095975A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE WITH A MOVABLE SPUTTER ASSEMBLY AND CONTROL OVER PROCESS GAS PARAMETERS 审中-公开
标题翻译：用可移动的喷射器组件涂覆基板和控制过程气体参数的装置和方法
公开(公告)号：WO2016095975A1
公开(公告)日：2016-06-23
申请号：PCT/EP2014/078056
申请日：2014-12-16
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , BENDER, Marcus , HANIKA, Markus , LINDENBERG, Ralph
发明人： SEVERIN, Daniel , BENDER, Marcus , HANIKA, Markus , LINDENBERG, Ralph
IPC分类号： C23C14/50 , C23C14/34 , C23C14/35 , C23C14/56 , C23C14/54 , H01J37/34 , C23C14/00 , H01J37/32
CPC分类号： C23C14/562 , C23C14/0063 , C23C14/3492 , C23C14/352 , C23C14/54 , C23C14/542 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/347
摘要： According to embodiments, an apparatus and a method for coating a substrate are provided. The apparatus includes a vacuum process chamber. The vacuum process chamber includes a gas inlet assembly and a sputter assembly. The gas inlet assembly includes at least one connector for connecting to one or more process gas sources. The sputter assembly includes a sputter source. The sputter assembly is movable in the vacuum process chamber. The apparatus further includes a controller. The controller is configured for controlling, in dependence of a current position of the sputter source in the vacuum process chamber, at least one of: a flow of a process gas introduced through the gas inlet assembly into the vacuum process chamber, a composition of the process gas introduced through the gas inlet assembly into the vacuum process chamber, and a distribution of the process gas introduced through the gas inlet assembly into the vacuum process chamber. The controller may additionally or alternatively be configured for controlling a gas flow pumped out of the vacuum process chamber.
摘要翻译：根据实施例，提供了一种用于涂覆基板的装置和方法。该装置包括真空处理室。真空处理室包括气体入口组件和溅射组件。气体入口组件包括用于连接到一个或多个处理气体源的至少一个连接器。溅射组件包括溅射源。溅射组件可在真空处理室中移动。该装置还包括控制器。控制器被配置为根据真空处理室中的溅射源的当前位置来控制以下中的至少一个：通过气体入口组件引入真空处理室的工艺气体的流动，通过气体入口组件引入真空处理室的工艺气体，以及通过气体入口组件引入到真空处理室中的工艺气体的分布。控制器可以附加地或替代地被配置为用于控制从真空处理室抽出的气流。

10. 发明申请

WO2015172835A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE BY ROTARY TARGET ASSEMBLIES IN TWO COATING REGIONS 审中-公开
标题翻译：用于通过两个涂层区域中的旋转靶组件涂覆基板的装置和方法
公开(公告)号：WO2015172835A1
公开(公告)日：2015-11-19
申请号：PCT/EP2014/059975
申请日：2014-05-15
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
发明人： BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
IPC分类号： C23C14/22 , C23C14/35 , C23C14/56 , H01J37/34
CPC分类号： C23C14/225 , C23C14/352 , C23C14/568 , H01J37/32733 , H01J37/3405 , H01J37/3417 , H01J37/3429 , H01J37/345 , H01J37/3452
摘要： According to an embodiment, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coating regions for coating the substrate. The sputter deposition apparatus includes a first substrate guiding system for guiding the substrate in a first coating region, wherein the first substrate guiding system defines a first substrate transport direction. The sputter deposition apparatus further includes a second substrate guiding system for guiding the substrate in a second coating region, the second substrate guiding system defining a second substrate transport direction. The second substrate transport direction is the same direction as the first substrate transport direction or is different from the first substrate transport direction. The sputter deposition apparatus further includes a first cathode assembly adapted for generating one or more plasma regions in the first coating region, a second cathode assembly adapted for generating one or more plasma regions in the first coating region, a third cathode assembly adapted for generating one or more plasma regions in the second coating region, and a fourth cathode assembly adapted for generating one or more plasma regions in the second coating region. The first cathode assembly includes: a first rotary target assembly adapted for rotating a target material around a first rotation axis; and a first magnet assembly fixedly positioned in the first rotary target assembly, the first magnet assembly having a first principal plane forming a first angle with a first reference plane which contains the first rotation axis and is perpendicular to the first substrate transport direction. The second cathode assembly includes: a second rotary target assembly adapted for rotating a target material around a second rotation axis; and a second magnet assembly fixedly positioned in the second rotary target assembly, the second magnet assembly having a second principal plane, the second principal plane being parallel to the first principal plane. The third cathode assembly includes: a third rotary target assembly adapted for rotating a target material around a third rotation axis; and a third magnet assembly fixedly positioned in the third rotary target assembly, the third magnet assembly having a third principal plane forming a second angle with a second reference plane which contains the third rotation axis and is perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle. The fourth cathode assembly includes: a fourth rotary target assembly adapted for rotating a target material around a fourth rotation axis; and a fourth magnet assembly fixedly positioned in the fourth rotary target assembly, the fourth magnet assembly having a fourth principal plane, the fourth principal plane being parallel to the third principal plane.
摘要翻译：根据实施例，提供了一种用于涂覆基板的溅射沉积设备。溅射沉积装置具有用于涂覆基板的两个或更多个涂覆区域。溅射沉积设备包括用于在第一涂覆区域中引导衬底的第一衬底引导系统，其中第一衬底引导系统限定第一衬底输送方向。溅射沉积设备还包括用于在第二涂覆区域中引导衬底的第二衬底引导系统，第二衬底引导系统限定第二衬底输送方向。第二基板输送方向与第一基板输送方向相同，也可以不同于第一基板输送方向。溅射沉积设备还包括适于在第一涂覆区域中产生一个或多个等离子体区域的第一阴极组件，适于在第一涂覆区域中产生一个或多个等离子体区域的第二阴极组件，适于产生一个或更多的等离子体区域，以及适于在第二涂覆区域中产生一个或多个等离子体区域的第四阴极组件。第一阴极组件包括：适于围绕第一旋转轴线旋转目标材料的第一旋转靶组件; 以及固定地定位在所述第一旋转靶组件中的第一磁体组件，所述第一磁体组件具有与包含所述第一旋转轴线且垂直于所述第一衬底输送方向的第一参考平面形成第一角度的第一主平面。第二阴极组件包括：适于围绕第二旋转轴线转动目标材料的第二旋转靶组件; 以及固定地定位在所述第二旋转靶组件中的第二磁体组件，所述第二磁体组件具有第二主平面，所述第二主平面平行于所述第一主平面。第三阴极组件包括：适于围绕第三旋转轴线转动目标材料的第三旋转靶组件; 以及固定地定位在所述第三旋转靶组件中的第三磁体组件，所述第三磁体组件具有第三主平面，所述第三主平面与包含所述第三旋转轴线且垂直于所述第二基板输送方向的第二参考平面形成第二角度，其中，第二角度与第一角度不同。第四阴极组件包括：适于围绕第四旋转轴线旋转目标材料的第四旋转靶组件; 以及固定地定位在所述第四旋转靶组件中的第四磁体组件，所述第四磁体组件具有第四主平面，所述第四主平面平行于所述第三主平面。

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